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Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy
National licenceAmerican Institute of Physics | 1981| -
Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy
National licenceAmerican Institute of Physics | 1982| -
A graded‐index waveguide separate‐confinement laser with very low threshold and a narrow Gaussian beam
National licenceAmerican Institute of Physics | 1981| -
Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
National licenceAmerican Institute of Physics | 1979| -
The effects of lateral current spreading, carrier out‐diffusion, and optical mode losses on the threshold current density of GaAs‐AlχGa1−χAs stripe‐geometry DH lasers
National licenceAmerican Institute of Physics | 1978| -
Elimination of oval defects in epilayers by using chemical beam epitaxy
National licenceAmerican Institute of Physics | 1985| -
The influence of bulk nonradiative recombination in the wide band‐gap regions of molecular beam epitaxially grown GaAs‐AlxGa1−xAs DH lasers
National licenceAmerican Institute of Physics | 1978| -
Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm
National licenceAmerican Institute of Physics | 1984| -
Self‐terminating thermal oxidation of AlAs epilayers grown on GaAs by molecular beam epitaxy
National licenceAmerican Institute of Physics | 1978| -
Al0.48In0.52 As/Ga0.47In0.53 As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm
National licenceAmerican Institute of Physics | 1981| -
Device characteristics of (AlGa)As multiquantum‐well heterostructure lasers grown by molecular beam epitaxy
National licenceAmerican Institute of Physics | 1981| -
In situ Ohmic‐contact formation to n‐ and p‐GaAs by molecular beam epitaxy
National licenceAmerican Institute of Physics | 1978| -
Growth of InP, GaAs, and In0.53Ga0.47As by chemical beam epitaxy
American Institute of Physics | 1985| -
Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy
National licenceAmerican Institute of Physics | 1980| -
Very low current threshold GaAs/Al0.5Ga0.5As double‐heterostructure lasers grown by chemical beam epitaxy
National licenceAmerican Institute of Physics | 1986| -
High‐through‐put, high‐yield, and highly‐reproducible (AlGa)As double‐heterostructure laser wafers grown by molecular beam epitaxy
National licenceAmerican Institute of Physics | 1981| -
Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double‐heterostructure and multiquantum well lasers
National licenceAmerican Institute of Physics | 1986| -
GaInAsP/InP double heterostructure lasers emitting at 1.5 μm grown by chemical beam epitaxy
National licenceAmerican Institute of Physics | 1987|
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