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Reassessment of the piezoelectric constant in GaAs by studying the electron transport of high purity MBE-grown GaAs
British Library Online Contents | 1994| -
Electron mobilities in gallium, indium, and aluminum nitrides
National licenceAmerican Institute of Physics | 1994| -
Determination of barrier height and doping density of a Schottky diode from infrared photoresponse measurements
British Library Online Contents | 1992| -
Dislocation scattering effects on electron mobility in InAsSb
National licenceAmerican Institute of Physics | 1994| -
Transition in (001) AlGaAs/AlAs/GaAs double‐barrier quantum structure for infrared photodetection
National licenceAmerican Institute of Physics | 1996| -
Alloy‐scattering dependence of electron mobility in the ternary gallium, indium, and aluminum nitrides
National licenceAmerican Institute of Physics | 1995| -
Carrier concentration and compensation ratio dependence of electron drift mobility in InAs1−xSbx
National licenceAmerican Institute of Physics | 1992| -
Transition in (001) AlGaAs/AlAs/GaAs double-barrier quantum structure for infrared photodetection
British Library Online Contents | 1996| -
Current characteristics of the double-barrier Al~0~.~2~5Ga~0~.~7~5As/Al~0~.~4~5Ga~0~.~5~5As/GaAs single-quantum-well structures
British Library Online Contents | 1995| -
Transport mechanism of - and X-band electrons in Al~xGa~1~-~xAs/AlAs/GaAs double-barrier quantum-well infrared photodetectors
British Library Online Contents | 1996| -
Energy distribution of interface state density in AlN/n-GaAs heterostructures formed by laser chemical vapor deposition
British Library Online Contents | 1993| -
Current characteristics of the double-barrier As/As/GaAs single-quantum-well structures
National licenceAmerican Physical Society | 1995| -
Electron mobility in In~0~.~5~3Ga~0~.~4~7As as a function of concentration and temperature
British Library Online Contents | 1995| -
Transport mechanism of Γ- and X-band electrons in As/AlAs/GaAs double-barrier quantum-well infrared photodetectors
National licenceAmerican Physical Society | 1996| -
Dielectric properties of AIN films prepared by laser-induced chemical vapour deposition
British Library Online Contents | 1994| -
Electron mobilities in gallium, indium, and aluminum nitrides
British Library Online Contents | 1994| -
Dislocation scattering effects on electron mobility in InAsSb
British Library Online Contents | 1994|
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