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In situ X-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystals
National licenceTaylor & Francis Verlag | 1983| -
Influence of oxygen precipitation along dislocations on the strength of silicon crystals
National licenceAmerican Institute of Physics | 1996| -
Defect science of semiconductors for device production technology
National licenceTaylor & Francis Verlag | 1999| -
Quantitative electron‐beam tester for defects in semiconductors (CL/EBIC/SDLTS system)
National licenceAmerican Institute of Physics | 1995| -
Impurity effects on the generation, velocity, and immobilization of dislocations in GaAs
National licenceAmerican Institute of Physics | 1989| -
Interaction of dislocations with impurities in silicon crystals studied by in situ X-ray topography
National licenceTaylor & Francis Verlag | 1983| -
Effects of In impurity on the dynamic behavior of dislocations in GaAs
National licenceAmerican Institute of Physics | 1987| -
Effects of dopants on dynamic behavior of dislocations and mechanical strength in InP
National licenceAmerican Institute of Physics | 1993| -
In situ X-ray topographic studies of the generation and the multiplication processes of dislocations in silicon crystals at elevated temperatures
National licenceTaylor & Francis Verlag | 1981| -
Role of impurities in reducing grown-in dislocations in compound semicoductor crystals
Tema Archive | 1992| -
In situ X-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystals
National licenceTaylor & Francis Verlag | 1983|
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