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Prevention of AlN crystal from cracking on SiC substrates by evaporation of the substrates
Springer Verlag | 2015| -
Epitaxy of gallium nitride in semi-polar direction on silicon
British Library Online Contents | 2012| -
DIELECTRIC RELAXATION PROCESSES IN RELAXOR FERROELECTRIC Cd~2Nb~2O~7 MODIFIED WITH Ni^2^+ OR Cu^2^+
British Library Conference Proceedings | 2003| -
DIELECTRIC RELAXATION PROCESSES IN RELAXOR FERROELECTRIC Cd~2Nb~2O~7 MODIFIED WITH Ni^2^+ OR Cu^2^+
British Library Online Contents | 2003| -
Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements
British Library Online Contents | 1999| -
Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy
Online Contents | 2019| -
Investigation of the heteroexpitaxial structures {p-3Cl n-6H}-SiC
British Library Online Contents | 1997| -
Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy
Springer Verlag | 2019| -
High-resolution electron microscopy of silicon rapidly grown by the floating zone method
British Library Online Contents | 1994|
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