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Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
Free accessAmerican Institute of Physics | 2024| -
Review: Structural, elastic, and thermodynamic properties of cubic and hexagonal ScxAl1−xN crystals
Free accessBASE | 2023| -
Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal–Organic Chemical Vapor Deposition
American Chemical Society | 2023| -
Structural properties and epitaxial relation of cubic rock salt ScxAl1−xN/ScN/Si
Free accessBASE | 2023| -
Defect Location in Laterally Aligned Tin Oxide Nanowires: The Role of Growth Direction, Interface Dimensionality, and Catalyst
American Chemical Society | 2023| -
Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy
Free accessAmerican Institute of Physics | 2023| -
Extended monolithic integration levels for highly functional GaN power ICs
TIBKAT | 2023|Contributors: Ambacher, Oliver -
Effect of V/III ratio and growth pressure on surface and crystal quality of AlN grown on sapphire by metal-organic chemical vapor deposition
Free accessAmerican Institute of Physics | 2022| -
Optische Schnittstelle und Verfahren zur spektroskopischen Erfassung
Free accessEuropean Patent Office | 2022| -
On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors
Free accessAmerican Institute of Physics | 2022| -
Leakage mechanism in Al x Ga1−x N/GaN heterostructures with AlN interlayer
Free accessIOP Institute of Physics | 2022| -
Diamond-based diodes for high voltage applications
Free accessBASE | 2022|Contributors: Ambacher, Oliver -
Small-signal and noise modeling of high-electron-mobility transistors for use in quantum technologies
TIBKAT | 2022|Contributors: Ambacher, Oliver
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