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Efficiency enhancement of ZnO/Cu2O solar cells with well oriented and micrometer grain sized Cu2O films
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
Intrinsic electron mobility limits in β-Ga2O3
American Institute of Physics | 2016|Keywords: SEMICONDUCTORS -
Donors and deep acceptors in β-Ga2O3
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
Iron and intrinsic deep level states in Ga2O3
Free accessAmerican Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode
American Institute of Physics | 2020|Keywords: SEMICONDUCTORS -
Structural and electronic properties of Ga2O3-Al2O3 alloys
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
High performance CsPbBr3 quantum dots photodetectors by using zinc oxide nanorods arrays as an electron-transport layer
American Institute of Physics | 2020|Keywords: SEMICONDUCTORS -
High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
American Institute of Physics | 2017|Keywords: SEMICONDUCTORS -
Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
Acceptor doping of β-Ga2O3 by Mg and N ion implantations
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
American Institute of Physics | 2017|Keywords: SEMICONDUCTORS -
Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K
American Institute of Physics | 2017|Keywords: SEMICONDUCTORS -
Assessment of the thermoelectric performance of polycrystalline p-type SnSe
American Institute of Physics | 2014|Keywords: SEMICONDUCTORS -
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
Influence of metal choice on (010) β-Ga2O3 Schottky diode properties
American Institute of Physics | 2017|Keywords: SEMICONDUCTORS -
Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
Systematic investigation of the growth kinetics of β-Ga2O3 epilayer by plasma enhanced chemical vapor deposition
American Institute of Physics | 2020|Keywords: SEMICONDUCTORS -
1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si
American Institute of Physics | 2017|Keywords: SEMICONDUCTORS -
Optical signatures of deep level defects in Ga2O3
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
American Institute of Physics | 2016|Keywords: SEMICONDUCTORS -
Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide
American Institute of Physics | 2019|Keywords: SEMICONDUCTORS -
Gallium vacancies in β-Ga2O3 crystals
American Institute of Physics | 2017|Keywords: SEMICONDUCTORS -
Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
American Institute of Physics | 2016|Keywords: SEMICONDUCTORS -
Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage
American Institute of Physics | 2017|Keywords: SEMICONDUCTORS -
633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress
Free accessAmerican Institute of Physics | 2020|Keywords: SEMICONDUCTORS -
Carbon dimer defect as a source of the 4.1 eV luminescence in hexagonal boron nitride
American Institute of Physics | 2019|Keywords: SEMICONDUCTORS -
Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes
American Institute of Physics | 2020|Keywords: SEMICONDUCTORS -
Structure and vibrational properties of the dominant O-H center in β-Ga2O3
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing
American Institute of Physics | 2019|Keywords: SEMICONDUCTORS -
Electrical properties of bulk semi-insulating β-Ga2O3 (Fe)
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W
American Institute of Physics | 2021|Keywords: SEMICONDUCTORS -
Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
Free accessAmerican Institute of Physics | 2017|Keywords: SEMICONDUCTORS -
β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2
American Institute of Physics | 2021|Keywords: SEMICONDUCTORS -
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
American Institute of Physics | 2017|Keywords: SEMICONDUCTORS -
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
American Institute of Physics | 2016|Keywords: SEMICONDUCTORS -
Semiconductor materials in analytical applications of surface‐enhanced Raman scattering
Wiley | 2016|Keywords: semiconductor‐mediated‐enhanced Raman scattering, semiconductor‐based SERS technique, semiconductor materials, semiconductor‐enhanced Raman scattering, metal/semiconductor hybrids -
Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study
American Institute of Physics | 2017|Keywords: SEMICONDUCTORS -
High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate
American Institute of Physics | 2017|Keywords: SEMICONDUCTORS -
Two-dimensional InSe as a potential thermoelectric material
American Institute of Physics | 2017|Keywords: SEMICONDUCTORS -
Epitaxial engineering of polar ε-Ga2O3 for tunable two-dimensional electron gas at the heterointerface
American Institute of Physics | 2018|Keywords: SEMICONDUCTORS -
Integration of polycrystalline Ga2O3 on diamond for thermal management
American Institute of Physics | 2020|Keywords: SEMICONDUCTORS -
Hydrogen anion and subgap states in amorphous In–Ga–Zn–O thin films for TFT applications
American Institute of Physics | 2017|Keywords: SEMICONDUCTORS
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