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Two-bit multi-level phase change random access memory with a triple phase change material stack structure
National licenceAmerican Institute of Physics | 2012| -
Multi-level phase change memory devices with Ge2Sb2Te5 layers separated by a thermal insulating Ta2O5 barrier layer
National licenceAmerican Institute of Physics | 2011| -
Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions
National licenceIOP Institute of Physics | 2007| -
Fin field effect transistor device structure and method for forming the same
Free accessEuropean Patent Office | 2022| -
FIN FIELD EFFECT TRANSISTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Free accessEuropean Patent Office | 2021| -
Enhancing CMOS transistor performance using lattice-mismatched materials in source-drain regions
Online Contents | 2007| -
Field-Effect Transistors Having Black Phosphorus Channel and Methods of Making the Same
Free accessEuropean Patent Office | 2018| -
Field-effect transistors having black phosphorus channel and methods of making the same
Free accessEuropean Patent Office | 2018| -
Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions
National licenceAmerican Institute of Physics | 2005|
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