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Growth and properties of wide bandgap (MgSe)n(ZnxCd1−xSe)m short-period superlattices
British Library Online Contents | 2017| -
Optimization of barrier layer thickness in MgSe/CdSe quantum wells for intersubband devices in the near infrared region
American Institute of Physics | 2015| -
Molecular Beam Epitaxy of Twin-Free Bi2Se3 and Sb2Te3 on In2Se3/InP(111)B Virtual Substrates
Free accessArXiv | 2023| -
Optimization of barrier layer thickness in MgSe/CdSe quantum wells for intersubband devices in the near infrared region (5 pages)
British Library Online Contents | 2015| -
Reduced twinning and surface roughness of Bi2Se3 and Bi2Te3 layers grown by molecular beam epitaxy on sapphire substrates
American Institute of Physics | 2018| -
Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy
Free accessArXiv | 2018| -
Near infrared intersubband absorption of CdSe/MgSe quantum wells grown on InP substrate with an InAlAs buffer layer
American Institute of Physics | 2014| -
MgSe/ZnSe/CdSe coupled quantum wells grown on InP substrate with intersubband absorption covering 1.55 μm
American Institute of Physics | 2014| -
Influence of ZnSe capping of CdSe layers in the growth mode of ZnCdMgSe/CdSe/ZnCdMgSe heterostructures
American Institute of Physics | 2016| -
High performance, room temperature, broadband II-VI quantum cascade detector
American Institute of Physics | 2015|
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