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1.5 S-Butyl 1.5 N-Butyl Bismuth and 1.5-Butyl 1.5-Isopropyl Bismuth as New Liquid Bismuth Precursors for SBT Thin Film Deposition
British Library Conference Proceedings | 2006| -
1.5 S-Butyl 1.5 N-Butyl Bismuth and 1.5-Butyl 1.5-Isopropyl Bismuth as new Liquid Bismuth Precursors for SBT Thin Film Deposition
British Library Conference Proceedings | 2007| -
4. Defects, Impurities and Dislocations in Group-III Nitrides - 4.1 Properties of doped group-III nitrides - Incorporation of Deep Defects in GaN Induced by Doping and Implantation Processes
Online Contents | 1999|Contributors: Lisker, M. -
A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology
British Library Online Contents | 2014| -
A 250GHz Hetero-Integrated VCO with 0.7mW Output Power in InP-on-BiCMOS Technology
British Library Conference Proceedings | 2015| -
Activated Pulsed Metalorganic Chemical Vapor Deposition of Ge~2Sb~2Te~5 Thin Films Using Alkyl Precursors
British Library Conference Proceedings | 2010| -
Analysis of deep traps in hexagonal molecular beam epitaxy-grown GaN by admittance spectroscopy
National licenceAmerican Institute of Physics | 1998| -
Analysis of deep traps in hexagonal molecular beam epitaxy-grown GaN by admittance spectroscopy
British Library Online Contents | 1998| -
Application of atomic layer deposited dopant sources for ultra-shallow doping of silicon
British Library Online Contents | 2014| -
Application of atomic layer deposited dopant sources for ultra-shallow doping of silicon
British Library Conference Proceedings | 2014| -
A simple two-step phosphorus doping process for shallow junctions by applying a controlled adsorption and a diffusion in an oxidising ambient
British Library Online Contents | 2004| -
A simple two-step phosphorus doping process for shallow junctions by applying a controlled adsorption and a diffusion in an oxidising ambient
British Library Conference Proceedings | 2004|
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