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Using SIMS and the NIST standard reference material #2137 to calibrate standards used in the nuclear reaction analysis of B in Si
National licenceElsevier | 2002| -
Accuracy of secondary ion mass spectrometry in determining ion implanted B doses as confirmed by nuclear reaction analysis
American Institute of Physics | 2000| -
Sputtering of Si with decaborane cluster ions
National licenceAmerican Institute of Physics | 2002| -
Effect of pressure on the solid phase epitaxial regrowth rate of Si
National licenceAmerican Institute of Physics | 1985| -
Pressure dependence of arsenic diffusivity in silicon
National licenceAmerican Institute of Physics | 1985| -
Interstitial defects in silicon from 1–5 keV Si+ ion implantation
National licenceAmerican Institute of Physics | 1997| -
Effect of self‐implantation on structure and oxidation behavior of single crystal β‐SiC
National licenceAmerican Institute of Physics | 1993| -
Using SIMS and the NIST standard reference material #2137 to calibrate standards used in the 11B(p,a)8Be nuclear reaction analysis of B in Si
Online Contents | 2003|Contributors: Jacobson, Dale C. -
Propagation of picosecond electrical pulses on a silicon‐based microstrip line with buried cobalt silicide ground plane
National licenceAmerican Institute of Physics | 1991| -
Ion-Beam Polishing of Diamond Thin Films
British Library Conference Proceedings | 1995|Contributors: Jacobson, Dale C.
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