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Determination of the interface band alignment of Mg2Si/4H‐SiC heterojuction for potential photodetector application
Wiley | 2022|Keywords: 4H‐SiC -
Nitridation of the SiO2/4H–SiC interface studied by surface-enhanced Raman spectroscopy
Elsevier | 2006|Keywords: 4H–SiC -
Simultaneous Formation of Ohmic Contacts on p+- and n+-4H-SiC Using a Ti/Ni Bilayer
Online Contents | 2013|Keywords: 4H-SiC -
Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery
Elsevier | 2014|Keywords: 4H-SiC -
Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency
American Institute of Physics | 2012|Keywords: 4H-SiC -
Doping-dependent nucleation of basal plane dislocations in 4H-SiC
IOP Institute of Physics | 2022|Keywords: 4H-SiC -
Temperature dependence of current-and capacitance–voltage characteristics of an Au/4H-SiC Schottky diode
Elsevier | 2014|Keywords: 4H-SiC -
Analysis of Dislocation Structures in 4H‐SiC by Synchrotron X‐Ray Topography
Wiley | 2016|Keywords: 4H‐SiC power device, 4H‐SiC wafer -
The Electronic Structures and Magnetism in Al Doped 4H-SiC: The First-Principles Calculation
Online Contents | 2013|Keywords: 4H-SiC -
Switching Performance of V-Groove Trench Gate SiC MOSFETs with Grounded Buried p+ Regions
National licenceTrans Tech Publications | 2017|Keywords: 4H-SiC -
Effect of beam profile on nanosecond laser drilling of 4H-SIC
American Institute of Physics | 2018|Keywords: 4H-SiC -
The Electronic Structures and Magnetism in Al Doped 4H-SiC: The First-Principles Calculation
Online Contents | 2013|Keywords: 4H-SiC -
Hard X-ray and -ray spectroscopy at high temperatures using a COTS SiC photodiode
Elsevier | 2020|Keywords: 4H-SiC -
Dislocation Behavior in Bulk Crystals Grown by TSSG Method
National licenceTrans Tech Publications | 2018|Keywords: 4H-SiC -
Investigation of Interface State Density with Varied SiO2 Thickness in La2O3/SiO2/4H-SiC MOS Capacitors
National licenceTrans Tech Publications | 2016|Keywords: 4H-SiC -
Majority and Minority Carrier Traps in Manganese as‐Implanted and Postimplantation‐Annealed 4H‐SiC
Wiley | 2023|Keywords: 4H-SiC -
A novel stair-stepping buffer-gate 4H-SiC MESFET with multiple recesses in a buffer layer
Taylor & Francis Verlag | 2022|Keywords: 4H-SiC MESFET -
ESR Study on Hydrogen Passivation of Intrinsic Defects in p-Type and Semi-Insulating 4H-SiC
National licenceTrans Tech Publications | 2016|Keywords: p-Type 4H-SiC, Semi-Insulating 4H-SiC
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