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Ohmic contacts with palladium diffusion barrier on III-V semiconductors
British Library Online Contents | 2010| -
Concentration-Dependent Photoluminescence and Raman of p-Type GaAs Grown in a Metallic-Arsenic-Based-MOCVD System
British Library Online Contents | 2008| -
Concentration-Dependent Photoluminescence and Raman of p-Type GaAs Grown in a Metallic-Arsenic-Based-MOCVD System
British Library Conference Proceedings | 2008| -
Optical and Surface Morphology Characterization of Nanometric Palladium Films on Silicon Substrates Annealed in Hydrogen Atmosphere
British Library Online Contents | 2010| -
Physical Properties of Thin Films of GaAs and AlxGa~1~-~xAs Grown by Solid-Arsenic-Based MOCVD
British Library Conference Proceedings | 2014| -
Structural Characterization by HRXRD and Raman Scattering of AlxGa1-xSb/GaSb Heterostructure
British Library Conference Proceedings | 2010| -
Characterization of AlxGa1-xAs layers grown on (100) GaAs by metallic-arsenic-based-MOCVD
British Library Online Contents | 2010| -
Optical and electrical characterization of Al~xGa~1~-~xAs layers grown on GaAs obtained by a metallic-arsenic-based-MOCVD system
British Library Conference Proceedings | 2007| -
Growth of Al$_x$Ga$_{1 - x}$As/GaAs structures for single quantum wells by solid arsenic MOCVD system
Free accessBASE | 2007| -
Physical property analysis of C-doped GaAs as function of the carrier concentration grown by MOCVD using elemental arsenic as precursor
British Library Conference Proceedings | 2006|
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