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Growth Optimisation of GaInN-GaN Multiple Quantum Well Structures: Application to RCLED Devices
Online Contents | 2002| -
TEM investigation of defect structure in GaAlN/GaN heterostructures
National licenceElsevier | 2002| -
A new approach to the “gettering” of oxygen during the growth of GaAlAs by low pressure MOCVD
National licenceElsevier | 1981| -
GaN Layers Grown by MOCVD on Composite SiC Substrate
British Library Conference Proceedings | 2008| -
First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT
IET Digital Library Archive | 1991|
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