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Simulation and Experimental Evaluation of a Soft Error Tolerant Layout for SRAM 6T Bitcell in 65nm Technology
Online Contents | 2015|Keywords: 6T Bitcell -
A Circuit for Robustness Enhancement of the Subthreshold SRAM Bitcell in 65nm Technology
National licenceTrans Tech Publications | 2012|Keywords: Bitcell -
An SEU-Resilient SRAM Bitcell in 65-nm CMOS Technology
Online Contents | 2016|Keywords: 12 T bitcell -
Simulation and Experimental Evaluation of a Soft Error Tolerant Layout for SRAM 6T Bitcell in 65nm Technology
Online Contents | 2015|Keywords: 6T Bitcell -
Analyzing Sub-Threshold Bitcell Topologies and the Effects of Assist Methods on SRAM VMIN
Free accessDOAJ | 2012|Keywords: alternative bitcell topologies -
Simulation and Experimental Evaluation of a Soft Error Tolerant Layout for SRAM 6T Bitcell in 65nm Technology
Springer Verlag | 2015|Keywords: 6T Bitcell -
An SEU-Resilient SRAM Bitcell in 65-nm CMOS Technology
Online Contents | 2016|Keywords: 12 T bitcell -
Impact of non‐uniformly doped double‐gate junctionless transistor on the performance of 6T‐SRAM bitcell
Free accessWiley | 2020|Keywords: six‐transistor static random access memory bitcell, 6T‐SRAM bitcell -
An Ultra-Low Energy Subthreshold SRAM Bitcell for Energy Constrained Biomedical Applications
Free accessDOAJ | 2014|Keywords: bitcell -
Bitcell-Based Design of On-Chip Process Variability Monitors for Sub-28 nm Memories
Online Contents | 2016|Keywords: Bitcell -
Differential Read/Write 7T SRAM With Bit-Interleaved Structure for Near-Threshold Operation
Free accessDOAJ | 2021|Keywords: 7T bitcell -
A 140-mV Variation-Tolerant Deep Sub-Threshold SRAM in 65-nm CMOS
Online Contents | 2017|Keywords: Differential bitcell -
An SEU-Resilient SRAM Bitcell in 65-nm CMOS Technology
Springer Verlag | 2016|Keywords: 12 T bitcell -
A 7T-NDR Dual-Supply 28nm FD-SOI Ultra-Low Power SRAM with 0.23nW/kB Sleep Retention and 0.8pJ/32b Access at 64MHz with Forward Back Bias
Free accessBASE | 2023|Keywords: bitcell design -
Design and Characterization of 6T SRAM Cell Industry-Academia Collaborative Chip Design Project
Springer Verlag | 2018|Keywords: Bitcell -
A 40-nm 16-Mb Contact-Programming Mask ROM Using Dual Trench Isolation Diode Bitcell
Online Contents | 2016|Keywords: diode bitcell -
SRAM Bitcell Functionality Under Body-Bias
Springer Verlag | 2020|Keywords: Bitcell, Bitcell stability, SRAM bitcell leakage -
A 16 nm 128 Mb SRAM in High- \kappa Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications
Online Contents | 2015|Keywords: high-density SRAM bitcell, Bitcell
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