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Thermal escape of carriers out of GaAs/As quantum-well structures
National licenceAmerican Physical Society | 1992| -
Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells
National licenceAmerican Physical Society | 1999| -
Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells
National licenceAmerican Physical Society | 1993| -
Displacement Talbot lithography for nano-engineering of III-nitride materials
Free accessSpringer Verlag | 2019| -
Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films
American Institute of Physics | 2014| -
Critical Thickness for Islanded Growth of Highly Strained In xGa1 - xAs on GaAs(001)
Online Contents | 1994|Contributors: Massies, Jean -
Surface morphology of AlN and size dispersion of GaN quantum dots
Online Contents | 2005|Contributors: Massies, Jean -
Letters - Semiconductors - Monolithic White Light Emitting Diodes Based on InGaN-GaN Multiple-Quantum Wells
Online Contents | 2001|Contributors: Massies, Jean -
Express Letters - Strong Carrier Localization in GaInN-GaN Quantum Dots Grown by Molecular Beam Epitaxy
Online Contents | 1999|Contributors: Massies, Jean -
Letters - Semiconductors - Violet InGaN-GaN Light Emitting Diodes Grown by Molecular Beam Epitaxy Using NH3
Online Contents | 1998|Contributors: Massies, Jean -
Interface Effects on the Photoluminescence of GaAs-GaInP Quantum Wells
Online Contents | 1998|Contributors: Massies, Jean
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