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Perspectives - Perspectives on future directions in III-N semiconductor research 058501
Online Contents | 2013|Contributors: Mastro, Michael A -
Photo-enhanced chemical etched GaN LED on silicon substrate
Online Contents | 2011|Contributors: Mastro, Michael A. -
Polarization-Engineered Heterogeneous Semiconductor Heterostructures
Free accessEuropean Patent Office | 2023| -
Polarization-Engineered Heterogeneous Semiconductor Heterostructures
Free accessEuropean Patent Office | 2023| -
Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN
Online Contents | 2010|Contributors: Mastro, Michael A. -
Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures
American Institute of Physics | 2017| -
Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures
Online Contents | 2017|Contributors: Mastro, Michael A -
Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond
American Institute of Physics | 2024| -
Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC
National licenceTrans Tech Publications | 2006|Contributors: Mastro, Michael A. -
Selective chemical etch of gallium nitride by phosphoric acid
American Institute of Physics | 2012| -
Selective chemical etch of gallium nitride by phosphoric acid 040602
Online Contents | 2012|Contributors: Mastro, Michael A -
Selective switching of GaN polarity on Ga-polar GaN using atomic layer deposited Al2O3
Online Contents | 2014|Contributors: Mastro, Michael A. -
Site control of quantum emitters in gallium nitride by polarity
American Institute of Physics | 2021|
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