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Elimination of microtwins in silicon grown on sapphire by molecular beam epitaxy
National licenceAmerican Institute of Physics | 1989| -
X‐ray reflectivity determination of interface roughness correlated with transport properties of (AlGa)As/GaAs high electron mobility transistor devices
National licenceAmerican Institute of Physics | 1996| -
Relief of compressive biaxial strains in thin films via microtwins
National licenceAmerican Institute of Physics | 1990| -
Real-time measurements of the pseudodielectric function of low-temperature-grown GaAs
British Library Online Contents | 2000| -
Real-time measurements of the pseudodielectric function of low-temperature-grown GaAs
British Library Online Contents | 2000| -
Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface
National licenceAmerican Institute of Physics | 1994| -
Quantum conductance fluctuations in the large-size-scale regime
National licenceAmerican Physical Society | 1996| -
Quantum conductance fluctuations in the large-size-scale regime
British Library Online Contents | 1996| -
Mesoscopic Conductance Fluctuations in Large Devices
British Library Conference Proceedings | 1994| -
X-ray reflectivity determination of interface roughness correlated with transport properties of (AlGa)As/GaAs high electron mobility transistor devices
British Library Online Contents | 1996| -
Interface Roughness, Composition, and Alloying of Low-Order AlAs/GaAs Superlattices Studied by X-Ray Diffraction
British Library Conference Proceedings | 1993| -
Study of phonons in semiconductor superlattices by raman scattering spectroscopy and microscopic model calculation
British Library Conference Proceedings | 1997| -
Mapping of GaAs(001) Surface Reconstructions During Molecular Beam Epitaxy Using RHEED and Diffuse Reflectance Spectroscopy
British Library Conference Proceedings | 2001| -
Determination of the complex refractive index of individual quantum wells from distributed reflectance
British Library Online Contents | 1994| -
Electron beam induced x-ray emission: An in situ probe for composition determination during molecular beam epitaxy growth
British Library Online Contents | 1998| -
Interface sharpness during the initial stages of growth of thin, short-period III-V superlattices
British Library Online Contents | 1993| -
Interface roughness of short-period AlAs/GaAs superlattices studied by spectroscopic ellipsometry
British Library Online Contents | 1993|
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