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P-type Doping of Silicon Suitable for Structures with High Aspect Ratios by Using a Dopant Source of Boron Oxide Grown by Atomic Layer Deposition
British Library Conference Proceedings | 2012|Contributors: Roozeboom, F. -
Sub-Atmospheric Chemical Vapor Deposition of SiO~2 for Dielectric Layers in High Aspect Ratio TSVs
British Library Conference Proceedings | 2011|Contributors: Roozeboom, F. -
Deep Trap Characterization in GaN Using Thermal and Optical Admittance Spectroscopy
British Library Conference Proceedings | 1998|Contributors: Ponce, F. A. -
InP-Si BiCMOS Heterointegration Using a Substrate Transfer Process
British Library Conference Proceedings | 2013|Contributors: Roozeboom, F. -
Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits
British Library Online Contents | 2014| -
Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
British Library Conference Proceedings | 2000| -
Processing and integration of graphene in a 200 mm wafer Si technology environment
British Library Online Contents | 2019| -
TRIBUTYLBISMUTH AS A LIQUID BISMUTH PRECURSOR IN AN AVD SYSTEM FOR STRONTIUM BISMUTH TANTALATE THIN FILM DEPOSITION
Online Contents | 2006|Contributors: Lisker, M., Edelmann, F. -
STRONTIUM BISMUTH TANTALATE THIN FILM DEPOSITION BY LIQUID-DELIVERY MOCVD USING NOVEL LIQUID BISMUTH PRECURSORS
Online Contents | 2006|Contributors: Lisker, M., Edelmannn, F. -
Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits
Online Contents | 2014|Contributors: Schmückle, F.-J., Lisker, M. -
InP-DHBT-on-BiCMOS Technology With fTlf max of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave Sources
Online Contents | 2013|Contributors: Schmueckle, F-J, Lisker, M
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