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Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium Doped GaN
British Library Conference Proceedings | 1999| -
GaN p-n Structures Fabricated by Mg Ion Implantation
British Library Conference Proceedings | 1999| -
TEM Study of Defects in Laterally Overgrown GaN Layers
British Library Conference Proceedings | 1999| -
Optical and Structural Properties of Er^3^+-Doped GaN Grown by MBE
British Library Conference Proceedings | 1999| -
Ion Channeling Analysis of Gallium Nitride Implanted With Deuterium
British Library Conference Proceedings | 1999| -
Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy
British Library Conference Proceedings | 1999| -
Phonon Dynamics and Lifetimes of AlN and GaN Crytallites
British Library Conference Proceedings | 1999| -
A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications
British Library Conference Proceedings | 1999| -
Effects of Susceptor Geometry on GaN Growth on Si(111) With a New MOCVD Reactor
British Library Conference Proceedings | 1999| -
Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
British Library Conference Proceedings | 1999| -
Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
British Library Conference Proceedings | 1999| -
Mechanism for Radiative Recombination in In~0~.~1~5Ga~0~.~8~5N/GaN Multiple Quantum Well Structures
British Library Conference Proceedings | 1999| -
Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
British Library Conference Proceedings | 1999|
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