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A 65-kV insulated gate bipolar transistor switch applied in damped AC voltages partial discharge detection system
American Institute of Physics | 2014| -
Optical absorption window in Na3Bi based three-dimensional Dirac electronic system
American Institute of Physics | 2020| -
Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers
National licenceAmerican Institute of Physics | 2006| -
“Genes” for material tailoring: Begin with the electron work function for MoC carbide modification—A first-principles study
American Institute of Physics | 2022| -
Deep level optical spectroscopy of GaN nanorods
National licenceAmerican Institute of Physics | 2009| -
AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure
American Institute of Physics | 2018| -
Epitaxial YBa2Cu3O7−y bolometers on micromachined windows in silicon wafers
National licenceAmerican Institute of Physics | 1993| -
A two-dimensional adsorption kinetic model for thermal hysteresis activity in antifreeze proteins
National licenceAmerican Institute of Physics | 2006| -
Investigation on boundary schemes in lattice Boltzmann simulations of boiling heat transfer involving curved surfaces
Free accessAmerican Institute of Physics | 2020| -
Two-color InGaAs/GaAs quantum dot infrared photodetectors by selective area interdiffusion
National licenceAmerican Institute of Physics | 2008| -
Two-photon photoluminescence and excitation spectra of InGaN/GaN quantum wells
National licenceAmerican Institute of Physics | 2006| -
Modulating microstructure and magnetic properties of BaFe12O19 thin films by using Pt and yttria stabilized zirconia underlayers
National licenceAmerican Institute of Physics | 2009| -
Very low level residual resistivity in silver‐sheathed (Bi,Pb)2Sr2Ca2Cu3O10 tapes
National licenceAmerican Institute of Physics | 1995| -
Effect of the starting surfaces of GaN on defect formation in epitaxial Co thin films
National licenceAmerican Institute of Physics | 2011| -
Influence of preparation on resistivity behavior of epitaxial Nd0.7Sr0.3MnO3−δ and La0.67Ba0.33MnO3−δ thin films
National licenceAmerican Institute of Physics | 1995| -
Compression behavior of selected laser melted Al/quasicrystal composite lattice structure
American Institute of Physics | 2019| -
First results from the J-TEXT high-resolution three-wave polarimeter-interferometer
National licenceAmerican Institute of Physics | 2012| -
Multilayer optics for harmonic control of angiography beamline sources
National licenceAmerican Institute of Physics | 1996| -
(001) oriented L10 FePt/B4C multilayer thin films on naturally oxidized Si substrate
National licenceAmerican Institute of Physics | 2013|
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