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1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy
Online Contents | 2017| -
Controllable resistor experiment device for rail transit
Free accessEuropean Patent Office | 2020| -
Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs
Online Contents | 2014| -
Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors
National licenceAmerican Institute of Physics | 2012| -
Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy
Free accessArXiv | 2017| -
Single-crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy
American Institute of Physics | 2017| -
HIGH VOLTAGE GALLIUM OXIDE (GA2O3) TRENCH MOS BARRIER SCHOTTKY AND METHODS OF FABRICATING SAME
Free accessEuropean Patent Office | 2021| -
High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and methods of fabricating same
Free accessEuropean Patent Office | 2024|
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