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Photoionization spectrum in double-barrier quantum wells: Exact expansion over resonances and natural line shape
National licenceAmerican Physical Society | 2001| -
Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Photoionization spectrum in double-barrier quantum wells: Exact expansion over resonances and natural line shape (9 pages)
Online Contents | 2001|Contributors: Luna, Esperanza -
Critical parameters for the molecular beam epitaxial growth of 1.55 μm (Ga,In)(N,As) multiple quantum wells
National licenceAmerican Institute of Physics | 2006| -
Critical parameters for the molecular beam epitaxial growth of 1.55 µm (Ga,In)(N,As) multiple quantum wells
Online Contents | 2006|Contributors: Luna, Esperanza -
Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (1 1 1) B GaAs
Free accessBASE | 2008| -
Implementación de las TIC en la enseñanza de la física, factibilidad y eficacia en nuestro país
Free accessDOAJ | 2011| -
InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy
Free accessBASE | 2011| -
Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces
Free accessArXiv | 2012| -
Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots
National licenceAmerican Institute of Physics | 2012|
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