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Dominant conduction mechanism in NiO-based resistive memories
American Institute of Physics | 2015| -
MEASUREMENT INSTRUMENT FOR CHEMICAL/PHYSICAL PHENOMENA AND METHOD FOR MANUFACTURING SAME
Free accessEuropean Patent Office | 2019| -
Dominant conduction mechanism in NiO-based resistive memories (10 pages)
British Library Online Contents | 2015| -
Consideration of Usefulness of Leakage Prevention System for Critical Diagnostic Information Transmission
British Library Conference Proceedings | 2022| -
Photoreaction of the Cysteine S−H Group in the LOV2 Domain of Adiantum Phytochrome3
American Chemical Society | 2002| -
Role of Phe1010 in Light-Induced Structural Changes of the neo1-LOV2 Domain of Adiantum †
American Chemical Society | 2008| -
Strong Donation of the Hydrogen Bond of Tyrosine during Photoactivation of the BLUF Domain
American Chemical Society | 2011|
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