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Anomalous luminescence degradation behaviour of chemically oxidized porous silicon
Online Contents | 1995| -
Transition metal impurities in silicon: New defect reactions
National licenceSpringer Verlag | 1989| -
Energy levels and solubility of interstitial chromium in silicon
National licenceAmerican Institute of Physics | 1981| -
On the question of multiple charge states of interstitial Fe and Cr in silicon
Tema Archive | 1983| -
A versatile method for analysing experimental curves with exponential time dependence
Tema Archive | 1981| -
Effects of Na+ impurities on the linewidth of intersubband resonances in Si MOS structures
National licenceElsevier | 1985| -
Anomalous luminescence degradation behaviour of chemically oxidized porous silicon
British Library Online Contents | 1995| -
New Derivatives of 4,4,5,5-Tetramethyl-4,5-dihydro-1H-imidazol-1-oxyl 3-Oxide as Monomers for Polyradicals with Special Magnetic Properties
British Library Online Contents | 1993| -
Summary Abstract: Experimental study of interfacial Na+ ‘‘impurities’’ in Si metal–oxide‐semiconductor structures
American Institute of Physics | 1985| -
Experimental identification of the energy level of substitutional manganese in silicon
National licenceAmerican Institute of Physics | 1987| -
Light Controlled Photoluminescence Relaxation in Porous Silicon
British Library Conference Proceedings | 1995| -
Synthesis, properties and characterization of octadecamethylbicyclo[4.4.0]decasilane
British Library Online Contents | 1993| -
Impurity-shifted intersubband transitions and screening in Na+-drifted Si MOSFETS
National licenceElsevier | 1985| -
Energy Level of the 0 to + Charge Transition of Substitutional Manganese in Silicon
National licenceAmerican Physical Society | 1985| -
Impurity-shifted intersubband transitions and screening in Na+-drifted Si MOSFETS
National licenceElsevier | 1986|
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