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Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation
National licenceAmerican Institute of Physics | 2008| -
Piezoelectric effects in semiconductor heterostructures: applications and consequences
British Library Online Contents | 2002| -
Efficient all-optical light modulation in a piezoelectric heterostructure at room temperature
National licenceAmerican Institute of Physics | 1998| -
Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers
National licenceAmerican Institute of Physics | 2008| -
A GaAs polariton light-emitting diode operating near room temperature
National licenceNature Publishing Group | 2008| -
Reduced threshold current in (111)B grown InGaAs/AlGaAs laser diodes: The positive role of piezoelectric effect
National licenceAmerican Institute of Physics | 2007| -
Room temperature observation of biexcitons in exfoliated WS2 monolayers
American Institute of Physics | 2017| -
Resonantly enhanced selective photochemical etching of GaN
National licenceAmerican Institute of Physics | 2009| -
Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications
British Library Online Contents | 2012| -
Room temperature GaAs exciton-polariton light emitting diode
National licenceAmerican Institute of Physics | 2009| -
Ultra-smooth GaN membranes by photo-electrochemical etching for photonic applications
Online Contents | 2014| -
Selective measurement of hole tunneling times through AlGaAs barriers based on the quantum confined Stark effect (5 pages)
British Library Online Contents | 2005| -
Reduced threshold current in (111)B grown InGaAs/AlGaAs laser diodes: The positive role of piezoelectric effect (3 pages)
British Library Online Contents | 2007| -
Ultra-smooth GaN membranes by photo-electrochemical etching for photonic applications
Springer Verlag | 2014| -
Absorption in ultrathin GaN-based membranes: The role of standing wave effects
American Institute of Physics | 2019| -
Low resistance as-deposited Cr/Au contacts on p-type GaN
National licenceAmerican Institute of Physics | 2007| -
Ultra-smooth GaN membranes by photo-electrochemical etching for photonic applications
Online Contents | 2014|
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