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301–350 of 16,517 hits
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Band engineering in dilute nitride and bismide semiconductor lasers
National licenceIOP Institute of Physics | 2012| -
Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation
PaperIOP Institute of Physics | 2017| -
The electronic and magnetic properties of wurtzite Mn:CdS, Cr:CdS Mn:Cr:CdS: first principles calculations
PaperIOP Institute of Physics | 2017| -
Small compressive strain-induced semiconductor–metal transition and tensile strain-enhanced thermoelectric properties in monolayer PtTe2
PaperIOP Institute of Physics | 2017| -
High-performance junction field-effect transistor based on black phosphorus/β-Ga2O3 heterostructure
PaperIOP Institute of Physics | 2020| -
Computationally efficient compact model for ferroelectric field-effect transistors to simulate the online training of neural networks
PaperIOP Institute of Physics | 2020| -
Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors
PaperIOP Institute of Physics | 2020| -
Investigations on epitaxy and lattice distortion of sputter deposited β-Ga2O3 layers on GaN templates
PaperIOP Institute of Physics | 2020| -
Realization of wafer-scale single-crystalline GaN film on CMOS-compatible Si(100) substrate by ion-cutting technique
PaperIOP Institute of Physics | 2020| -
Semipolar GaN grown on foreign substrates: a review
National licenceIOP Institute of Physics | 2012| -
Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells
PaperIOP Institute of Physics | 2015| -
The effects of the intense laser and homogeneous electric fields on the electronic and intraband optical properties of a GaAs/Ga0.7 Al0.3As quantum ring
Free accessPaperIOP Institute of Physics | 2015| -
Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulating β-Ga2O3 single crystal along [100], [010] and [001]
PaperIOP Institute of Physics | 2016| -
Influence of defect states on the performances of planar tin halide perovskite solar cells
PaperIOP Institute of Physics | 2019| -
Valence band states in an InAs/AlAsSb multi-quantum well hot carrier absorber
PaperIOP Institute of Physics | 2019| -
Constructing TiO2 decorated Bi2WO6 architectures with enhanced visible-light-driven photocatalytic activity
PaperIOP Institute of Physics | 2017| -
Piezotronics and piezo-phototronics based on a-axis nano/microwires: fundamentals and applications
Topical ReviewIOP Institute of Physics | 2017| -
Controlled synthesis of GaN-based nanowires for photoelectrochemical water splitting applications
Topical ReviewIOP Institute of Physics | 2017| -
Synthesis and characterization of poly (2,5-diyl pyrrole-2-pyrrolyl methine) semiconductor copolymer
PaperIOP Institute of Physics | 2018| -
Numerical study on the interface properties of a ZnO/c-Si heterojunction solar cell
PaperIOP Institute of Physics | 2018| -
Comparative analysis of memristor models and memories design
PaperIOP Institute of Physics | 2018| -
Surface hole gas enabled transparent deep ultraviolet light-emitting diode
LetterIOP Institute of Physics | 2018| -
Effect of inhomogeneous Schottky barrier height of SnO2 nanowires device
PaperIOP Institute of Physics | 2018| -
Thermoelectric prospects of chemically deposited PbSe and SnSe thin films
PaperIOP Institute of Physics | 2018| -
The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays
National licenceIOP Institute of Physics | 2011| -
Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors
PaperIOP Institute of Physics | 2016| -
Optoelectronic properties and Seebeck coefficient in SnSe thin films
PaperIOP Institute of Physics | 2016| -
Semiconductor optical fibres for infrared applications: A review
Topical ReviewIOP Institute of Physics | 2016| -
Practical applications of SiC-MOSFETs and further developments
PaperIOP Institute of Physics | 2016| -
Ferroelectric HfO2-based synaptic devices: recent trends and prospects
PaperIOP Institute of Physics | 2021| -
Organic semiconductors: commercialization and market
Research highlightsIOP Institute of Physics | 2021| -
Efficient and photostable CsPbI2Br solar cells realized by adding PMMA
PaperIOP Institute of Physics | 2021| -
Recent progress in integrated electro-optic frequency comb generation
PaperIOP Institute of Physics | 2021| -
Comparative performance analysis of mixed halide perovskite solar cells with different transport layers and back metal contacts
PaperIOP Institute of Physics | 2021| -
Enhanced on-state current and suppressed ambipolarity in germanium-source dual vertical-channel TFET
PaperIOP Institute of Physics | 2021| -
Recent trends in hardware security exploiting hybrid CMOS-resistive memory circuits
Topical ReviewIOP Institute of Physics | 2017| -
Method of choice for the fabrication of high-quality β-gallium oxide-based Schottky diodes
PaperIOP Institute of Physics | 2017| -
Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/RF performance
PaperIOP Institute of Physics | 2017| -
Ultrafast non-equilibrium carrier dynamics in semiconductor laser mode-locking
Topical ReviewIOP Institute of Physics | 2017| -
Low temperature hydrogen sensing using reduced graphene oxide and tin oxide nanoflowers based hybrid structure
PaperIOP Institute of Physics | 2016|
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