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SECTION 4: ION BEAM MODIFICATION - Surface electrical conductivity of Co+-implanted a-SiC: H films
Online Contents | 1998| -
Maintaining Data Integrity by Documenting the System: Putting Database Policy in Writing
British Library Online Contents | 1992| -
Book Review: Defect Recognition in Semiconductors before and after Processing:
SAGE Publications | 1994| -
A review of: “Properties of Indium Phosphide”. Edited by I.E.E. STAFF (London: INSPEC, The Institution of Electrical Engineers, 1991), 495 pp., £130 (hardcover). ISBN 0 85296 491 9.
National licenceTaylor & Francis Verlag | 1992| -
An examination of tellurium ion-implanted GaAs by transmission electron microscopy
Online Contents | 1975| -
A review of: “Rapid Thermal Processing”. Edited by Richard B. Fair (London, U.K.: Academic Press, 1993), 430pp., £61 00. ISBN 0 12247690 5.
National licenceTaylor & Francis Verlag | 1994| -
Retarding transient enhanced diffusion of boron in silicon with high energy silicon co-implants
British Library Online Contents | 2003| -
Modeling of high-current source-gated transistors in amorphous silicon
National licenceAmerican Institute of Physics | 2005| -
Studies of thermally-oxidized GaAs by transmission electron microscopy
National licenceTaylor & Francis Verlag | 1978| -
Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon
National licenceAmerican Institute of Physics | 2009| -
Correlation between electronegativity and dopant activity in ion‐implanted semi‐insulating GaAs
National licenceAmerican Institute of Physics | 1990| -
Sensitization of Er3+ emission at 1.5 μm in SiO2 thermally grown on silicon by coimplantation of Yb
National licenceAmerican Institute of Physics | 1999| -
The residual microstructure of ion-implanted semi-insulating GaAs
National licenceTaylor & Francis Verlag | 1986| -
Characteristics of erbium implants in silicon‐on‐insulator
National licenceAmerican Institute of Physics | 1990|
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