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A multilayer coated fiber-based substrate suitable for printed functionality
Elsevier | 2009|Keywords: 85.30.Hi -
Analysis of frequency dependences of conductance of MIS structures with the fluctuation-and tunneling-based theoretical models taken into account
Springer Verlag | 2006|Keywords: 85.30.Hi -
Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral Schottky structures
Springer Verlag | 2015|Keywords: 85.30.Hi -
A study on the 2D simulation of Pt/InGaN/GaN/metal Schottky junction solar cell
National licenceIOP Institute of Physics | 2013|Keywords: 85.30.Hi -
Cadmium-free thin-film Cu(In,Ga)Se2/(In2S3) heterophotoelements: Fabrication and properties
Springer Verlag | 2007|Keywords: 85.30.Hi -
Characteristics of surface mount low barrier silicon Schottky diodes with boron contamination in the substrate–epitaxial layer interface
National licenceIOP Institute of Physics | 2012|Keywords: 85.30.Hi -
Charge transport in 4H-SiC detector structures under conditions of a high electric field
Springer Verlag | 2009|Keywords: 85.30.Hi -
Comment on “Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts”
Elsevier | 2004|Keywords: 85.30.Hi -
Comparative study of methods for measuring. the apparent barrier height on an atomic scale
National licenceSpringer Verlag | 1998|Keywords: PACS: 61.16.Ch; 85.30.Hi -
Construction of pcAFM module to measure photoconductance with a nanoscale spatial resolution
Elsevier | 2008|Keywords: 85.30.Hi -
Current‐transport studies and trap extraction of hydrothermally grown ZnO nanotubes using gold Schottky diode
Wiley | 2010|Keywords: 85.30.Hi -
Design and optimization of junction termination extension (JTE) for 4H–SiC high voltage Schottky diodes
Elsevier | 2005|Keywords: 85.30.Hi -
Diagnostics of the models of the diode barrier capacitance
Springer Verlag | 2009|Keywords: 85.30.Hi -
Dynamic characteristics of MICC polycrystalline thin film transistors
Elsevier | 2006|Keywords: 85.30.Hi -
Effect of conditions of deposition and annealing of indium oxide films doped with fluorine (IFO) on the photovoltaic properties of the IFO/p-Si heterojunction
Springer Verlag | 2008|Keywords: 85.30.Hi -
Effect of rapid thermal annealing on the electrical and structural properties of Ru/n‐InP (100) Schottky rectifiers
Wiley | 2009|Keywords: 85.30.Hi
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