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Did you mean: person:("M mironov")
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Weak antilocalization of high mobility holes in a strained Germanium quantum well heterostructure
Fast Track CommunicationIOP Institute of Physics | 2015| -
Calibration of thickness-dependent k-factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy
Free accessIOP Institute of Physics | 2013| -
Self-organised fractional quantisation in a hole quantum wire
LetterIOP Institute of Physics | 2018| -
Electrochemical Study of Graphene Coated Nickel Foam as an Anode for Lithium-Ion Battery
Free accessDOAJ | 2018| -
High-quality Ge/Si0.4Ge0.6 multiple quantum wells for photonic applications: growth by reduced pressure chemical vapour deposition and structural characteristics
National licenceIOP Institute of Physics | 2011| -
Anisotropic size quantization and semimetal–semiconductor phase transition in bismuth-like cylindrical nanowires
National licenceIOP Institute of Physics | 2004| -
Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure
PaperIOP Institute of Physics | 2017| -
Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells
Free accessDOAJ | 2016| -
Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells
Free accessPaperIOP Institute of Physics | 2016| -
A new method of investigating the quantum channel surface
National licenceIOP Institute of Physics | 2008| -
A TEM study of Ge-on-(111)Si structures for potential use in high performance PMOS device technology
Free accessIOP Institute of Physics | 2011| -
Wigner glass formation in 2DHG of p-Si/SiGe by high magnetic fields
Free accessIOP Institute of Physics | 2009| -
TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology
Free accessIOP Institute of Physics | 2010| -
TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology
Free accessIOP Institute of Physics | 2010| -
High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth
National licenceIOP Institute of Physics | 2004|
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