Year of publication
Type of material
Licence
Synonyms were used for: Schichtstruktur
Search without synonyms: keywords:("Schichtstruktur")
Used synonyms:
- layer structure
- schichtengitter
- schichtgitter
- schichtkristall
-
0.1 micron Schottky-collector AlAs/GaAs resonant tunneling diodes
Tema Archive | 1994|Keywords: Schichtstruktur -
0.2 micron pseudomorphic HEMT technology by conventional optical lithography
Tema Archive | 1994|Keywords: Schichtstruktur -
0.2 micron T-gate InAlAs/InGaAs MODFET with FT = 170 GHz
Tema Archive | 1990|Keywords: SCHICHTSTRUKTUR -
0.3-micron gate length P-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency
Tema Archive | 1997|Keywords: Schichtstruktur -
0.3-micron mixed analog-digital CMOS technology for low-voltage operation
Tema Archive | 1994|Keywords: Schichtstruktur -
0.35 micrometer CMOS technology with chemical mechanical polishing for three metallization levels planarization
Tema Archive | 1994|Keywords: Schichtstruktur -
(100)-Oriented tetragonal zircon BiVO4 single crystal film
Elsevier | 2022|Keywords: Two-layer structure -
1.2 V operation 1.1 W heterojunction FET for portable radio applications
Tema Archive | 1995|Keywords: Schichtstruktur -
1.5 V-operation GaAs spike-gate Power FET with 65 % power-added efficiency
Tema Archive | 1995|Keywords: Schichtstruktur -
1.75 micron strained InGaAs multiquantum well laser grown on InAs(0.08)P(0.92) ternary substrate
Tema Archive | 1995|Keywords: Schichtstruktur -
1-Dimensional silicon photonic crystal pressure sensor for the measurement of low pressure
Free accessDOAJ | 2023|Keywords: Multi-layer structure -
1H-NMR STUDY OF HYDROGEN INTERCALATED IN β-ZIRCONIUM NITRIDE CHLORIDE
National licenceTaylor & Francis Verlag | 1996|Keywords: layer structure -
2.2.11 Ta, Tantalum
Scanning tunneling microscopy of metalsLandolt-Börnstein / Springer Materials | 2015|Keywords: layer structure -
2.2.12 V, Vanadium
Scanning tunneling microscopy of metalsLandolt-Börnstein / Springer Materials | 2015|Keywords: layer structure -
2.2.13 W, Tungsten
Scanning tunneling microscopy of metalsLandolt-Börnstein / Springer Materials | 2015|Keywords: layer structure -
2.3 V operation GaAs power MESFET with 68 % power-added efficiency
Tema Archive | 1994|Keywords: Schichtstruktur -
2.9 V operation GaAs power MESFET with 31.5-dBm output power and 64 % power-added efficiency
Tema Archive | 1994|Keywords: Schichtstruktur
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