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A full-configuration-interaction nuclear orbital approach and application for small doped He clusters
American Institute of Physics | 2015| -
Arrival‐time distribution of muons and electrons in large air showers observed at 5200m above sea level
American Institute of Physics | 1979| -
Breakdown transients in high-k multilayered MOS stacks: Role of the oxide–oxide thermal boundary resistance
American Institute of Physics | 2020| -
Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials
American Institute of Physics | 2017| -
Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics
National licenceAmerican Institute of Physics | 2008| -
Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
National licenceAmerican Institute of Physics | 2009| -
Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks
American Institute of Physics | 2018| -
Europium‐doped alkali halides as a selective ultraviolet dosimeter material in the actinic region
National licenceAmerican Institute of Physics | 1991| -
Extension of Biot’s theory of wave propagation to frozen porous media
American Institute of Physics | 1994| -
Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation
National licenceAmerican Institute of Physics | 2007| -
Fully versus constrained statistical fragmentation of carbon clusters and their heteronuclear derivatives
American Institute of Physics | 2019| -
GaAs interfacial self-cleaning by atomic layer deposition
National licenceAmerican Institute of Physics | 2008| -
Giant increase in cross-magnetic-field transport rate as an electron-positron plasma cools
American Institute of Physics | 2017| -
Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces
National licenceAmerican Institute of Physics | 2008| -
Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces
National licenceAmerican Institute of Physics | 2008| -
Including nuclear quantum effects into highly correlated electronic structure calculations of weakly bound systems
National licenceAmerican Institute of Physics | 2013| -
Indium stability on InGaAs during atomic H surface cleaning
National licenceAmerican Institute of Physics | 2008|
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