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Formation of Ge nanoparticles in SiOxNy by ion implantation and thermal annealing
Online Contents | 2015| -
Effects of ion irradiation on metallic nanocrystals formed by ion beam synthesis in SiO2
British Library Online Contents | 2006| -
Effects of ion irradiation on metallic nanocrystals formed by ion beam synthesis in SiO2
British Library Conference Proceedings | 2006| -
The rapid amorphisation of In0.53Ga0.47As relative to both InAs and GaAs
British Library Online Contents | 2004| -
Amorphization of Cu nanoparticles: Effects on surface plasmon resonance
National licenceAmerican Institute of Physics | 2011| -
Zinc and phosphorus co-implantation in indium phosphide
National licenceAmerican Institute of Physics | 1998| -
Direct observation of the amphoteric behavior of Ge in InP modified by P co-implantation
National licenceAmerican Institute of Physics | 1997| -
Trapping of Pd, Au, and Cu by implantation-induced nanocavities and dislocations in Si
National licenceAmerican Institute of Physics | 2006| -
PAC investigations of radiation damage annealing in 111In implanted ZnO
British Library Conference Proceedings | 2009| -
PAC investigations of radiation damage annealing in 111In implanted ZnO
British Library Online Contents | 2009| -
The Potential of the Perturbed Angular Correlation Technique in Characterizing Semiconductors
British Library Online Contents | 2009| -
Diverse chemotypes disrupt ion homeostasis in the malaria parasite
British Library Online Contents | 2014| -
A novel appproach to secondary defect reduction in separation by implantation of oxygen material
National licenceAmerican Institute of Physics | 1994| -
Zinc and group V element co-implantation in indium phosphide
British Library Online Contents | 2000| -
Vibrational Properties of Au and Cu Nanocrystals Formed by Ion Implantation
American Institute of Physics | 2007|
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