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Material quality frontiers of MOVPE grown AlGaAs for minority carrier devices
Elsevier | 2016|Keywords: B1. Arsenides -
Non-destructive mapping of doping and structural composition of MOVPE-grown high current density resonant tunnelling diodes through photoluminescence spectroscopy
Elsevier | 2015|Keywords: B1. Arsenides -
Growth of ferromagnetic MnAs1−xSbx films and MnSb/MnAs/MnAs1−xSbx multilayers on GaAs () by molecular beam epitaxy
Elsevier | 2004|Keywords: B1. Arsenides -
In-situ monitoring during MBE growth of InAs based heterostructures
Elsevier | 2015|Keywords: B1. Arsenides -
Growth rate dependence of boron incorporation into BxGa1−xAs layers
Elsevier | 2017|Keywords: B1. Arsenides -
Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1−y metamorphic buffer layers on InP substrates
Elsevier | 2010|Keywords: B1. Arsenides -
Growth of high-density 1.06-μm InGaAs/GaAs quantum dots for high gain lasers by molecular beamepitaxy
Elsevier | 2013|Keywords: B1. Arsenides -
Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4μm range
Elsevier | 2008|Keywords: B1. Arsenides -
Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy
Elsevier | 2004|Keywords: B1. Arsenides -
High-quality GaInAs/AlAsSb quantum cascade lasers grown by molecular beam epitaxy in continuous growth mode
Elsevier | 2005|Keywords: B1. Antimonides, B1. Arsenides -
Room temperature absorption in laterally biased quantum infrared detectors fabricated by MBE regrowth
Elsevier | 2010|Keywords: B1. Arsenides -
Quaternary GaInAsSb/AlGaAsSb vertical-external-cavity surface-emitting lasers—A challenge for MBE growth
Elsevier | 2008|Keywords: B1. Arsenides -
AlxIn1−xAsySb1−y alloys lattice matched to InAs(100) grown by molecular beam epitaxy
Elsevier | 2015|Keywords: B1: Arsenides -
MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelength
Elsevier | 2006|Keywords: B1. Arsenides -
Gas source molecular-beam epitaxial growth of TlInGaAsN double quantum well light emitting diode structures and thallium incorporation characteristics
Elsevier | 2006|Keywords: B1. Arsenides -
MBE growth and characterization of TlInGaAsN double quantum well structures
Elsevier | 2008|Keywords: B1. Arsenides -
Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3μm
Elsevier | 2006|Keywords: B1. Arsenides -
TlGaInNAs/GaAs double quantum well structures: Effect of barrier layers and substrate orientation
Elsevier | 2006|Keywords: B1. Arsenides
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