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Methods and systems for reducing crosstalk in avalanche photodiode detector arrays
Free accessEuropean Patent Office | 2016| -
Group V doping of GaAs-based layers to improve radiation tolerance of solar cells
Free accessEuropean Patent Office | 2017| -
Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells
Free accessEuropean Patent Office | 2022| -
TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS
Free accessEuropean Patent Office | 2022| -
TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF INP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS
Free accessEuropean Patent Office | 2018| -
Semiconductor device including an electrically conductive adhesive layer and a bypass diode in a carrier
Free accessEuropean Patent Office | 2023| -
SEMICONDUCTOR DEVICE INCLUDING AN ELECTRICALLY CONDUCTIVE ADHESIVE LAYER AND A BYPASS DIODE IN A CARRIER
Free accessEuropean Patent Office | 2017| -
SAM AVALANCHE PHOTODIODE DETECTOR WITH ABSORPTION REGION AND MULTIPLICATION REGION IN INDIVIDUAL ISOLATED MESAS
Free accessEuropean Patent Office | 2016| -
Solar cell structure and composition and method for forming the same
Free accessEuropean Patent Office | 2021| -
SAM avalanche photodiode detector with absorption region and multiplication region in individual isolated mesas
Free accessEuropean Patent Office | 2015| -
REMOVAL OF DEFECTS BY IN-SITU ETCHING DURING CHEMICAL-MECHANICAL POLISHING PROCESSING
Free accessEuropean Patent Office | 2023| -
REMOVAL OF DEFECTS BY IN-SITU ETCHING DURING CHEMICAL-MECHANICAL POLISHING PROCESSING
Free accessEuropean Patent Office | 2016|
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