IEEE transactions on electron devices
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 3044
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Electrostatic Doping in Semiconductor DevicesGupta, Gaurav / Rajasekharan, Bijoy / Hueting, Raymond J. E. et al. | 2017
- 3056
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Analytical Modeling of DG-MOSFET in Subthreshold Regime by Green’s Function ApproachNandi, Ashutosh / Pandey, Nilesh / Dasgupta, S. et al. | 2017
- 3063
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Impact of Gate/Spacer-Channel Underlap, Gate Oxide EOT, and Scaling on the Device Characteristics of a DG-RFETBhattacharjee, Abhishek / Dasgupta, Sudeb et al. | 2017
- 3071
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Analytical Estimation of Threshold Voltage Variability by Metal Gate Granularity in FinFETVardhan, P. Harsha / Mittal, Sushant / Ganguly, Swaroop et al. | 2017
- 3077
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Localized Tunneling Phenomena of Nanometer Scaled High- ${K}$ Gate-StackLin, Po-Jui Jerry / Lee, Che-An Andy / Yao, Chih-Wei Kira et al. | 2017
- 3084
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Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETsMedina-Bailon, Cristina / Padilla, Jose L. / Sampedro, Carlos et al. | 2017
- 3092
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Device-Circuit Analysis of Ferroelectric FETs for Low-Power LogicGupta, Shreya / Steiner, Mark / Aziz, Ahmedullah et al. | 2017
- 3101
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Compact On-Wafer Test Structures for Device RF CharacterizationKazemi Esfeh, Babak / Ben Ali, Khaled / Raskin, Jean-Pierre et al. | 2017
- 3108
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Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology PlatformVisciarelli, Michele / Gnani, Elena / Gnudi, Antonio et al. | 2017
- 3114
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Graded AlGaN Channel Transistors for Improved Current and Power Gain LinearityBajaj, Sanyam / Yang, Zhichao / Akyol, Fatih et al. | 2017
- 3120
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T-Shaped III-V Heterojunction Tunneling Field-Effect TransistorDubey, Prabhat Kumar / Kaushik, Brajesh Kumar et al. | 2017
- 3126
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Instability of Dynamic- $R_{\text ON}$ and Threshold Voltage in GaN-on-GaN Vertical Field-Effect TransistorsRuzzarin, M. / Meneghini, M. / Bisi, D. et al. | 2017
- 3126
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Instability of Dynamic- R and Threshold Voltage in GaN-on-GaN Vertical Field-Effect TransistorsRuzzarin, M et al. | 2017
- 3126
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Instability of dynamic- R.sub.ON and threshold voltage in GaN-on-GaN vertical field-effect transistorsRuzzarin, M et al. | 2017
- 3132
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Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of TemperatureWarnock, Shireen / Lemus, Allison / Joh, Jungwoo et al. | 2017
- 3139
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Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTsLi, Yi / Guo, Yaxiong / Zhang, Kai et al. | 2017
- 3145
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Multifilamentary Conduction Modeling in Transition Metal Oxide-Based RRAMAsapu, Shiva / Maiti, Tanmoy et al. | 2017
- 3151
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Low-power forming free TiO.sub./HfO.sub.(2 - y)/TiO.sub. -trilayer RRAM devices exhibiting synaptic property characteristicsBousoulas, Panagiotis et al. | 2017
- 3151
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Low-Power Forming Free TiO2–x/HfO2–y/TiO2–x-Trilayer RRAM Devices Exhibiting Synaptic Property CharacteristicsBousoulas, Panagiotis / Michelakaki, Irini / Skotadis, Evangelos et al. | 2017
- 3159
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Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM DevicesRodriguez-Fernandez, Alberto / Aldana, Samuel / Campabadal, Francesca et al. | 2017
- 3167
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Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on PolyimideChen, Bo-Wei / Chen, Hsin-Lu / Chang, Ting-Chang et al. | 2017
- 3174
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Investigation of High-Performance ITO-Stabilized ZnO TFTs With Hybrid-Phase Microstructural ChannelsDeng, Sunbin / Chen, Rongsheng / Li, Guijun et al. | 2017
- 3183
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Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film TransistorsHeo, Keun / Cho, Kyung-Sang / Choi, Jun Young et al. | 2017
- 3189
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Electro-Thermal Annealing Method for Recovery of Cyclic Bending Stress in Flexible a-IGZO TFTsLee, Myung Keun / Kim, Choong-Ki / Park, Jeong Woo et al. | 2017
- 3193
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Hydrogenated Amorphous Silicon Gate Driver With Low Leakage for Thin-Film Transistor Liquid Crystal Display ApplicationsLin, Chih-Lung / Deng, Ming-Yang / Wu, Chia-En et al. | 2017
- 3199
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A 4-M Pixel High Dynamic Range, Low-Noise CMOS Image Sensor With Low-Power Counting ADCMa, Cheng / Liu, Yang / Li, Yang et al. | 2017
- 3206
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Low-Frequency Noise Performance of Al-Doped ZnO Nanorod Photosensors by a Low-Temperature Hydrothermal MethodWang, Zi-Hao / Yu, Hsin-Chieh / Yang, Chih-Chiang et al. | 2017
- 3213
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Fast Control of Haze Value Using Electrically Switchable Diffraction in a Fringe-Field Switching Liquid Crystal DeviceChoi, Tae-Hoon / Woo, Jae-Hyeon / Baek, Jong-Min et al. | 2017
- 3219
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A Low-Temperature External Electron Retarding Electrode for Improving Vertical Green LED PerformanceTien, Ching-Ho / Ou, Sin-Liang / OuYang, Yi et al. | 2017
- 3226
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Enhancing the Hole-Injection Efficiency of a Light-Emitting Diode by Increasing Mg Doping in the p-AlGaN Electron-Blocking LayerSu, Chia-Ying / Tu, Charng-Gan / Liu, Wei-Heng et al. | 2017
- 3234
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Enhancing the Ultraviolet/Visible Rejection Ratio of MgxZn1−xO Metal-Semiconductor-Metal Photodetectors Using Oxygen-Plasma TreatmentHwang, J. D. / Chang, Y. C. et al. | 2017
- 3234
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Enhancing the ultraviolet/visible rejection ratio of Mg.sub.O metal-semiconductor-metal photodetectors using oxygen-plasma treatmentHwang, J. D et al. | 2017
- 3239
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Temperature and Parasitic Photocurrent Effects in Dynamic Vision SensorsNozaki, Yuji / Delbruck, Tobi et al. | 2017
- 3246
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Improved Light Output Power of InGaN/GaN LED by Using Ultrasonic Spray Pyrolysis Deposited MgOLiu, Han-Yin / Lee, Ching-Sung / Yang, Yun-Chung et al. | 2017
- 3252
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Exo-Electron Emission From MgO Nanopowders on MgO Thin Film of Alternating Current Plasma Display Panels—Part I. Mechanism of Exo-Electron EmissionKim, Yong-Seog / Kim, Joong Kyun / Weber, Larry F. et al. | 2017
- 3261
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Exo-Electron Emission From MgO Nanopowders on MgO Thin Film of Alternating Current Plasma Display Panels—Part II. Relationship Between Exo-Electron Currents and Statistical DelayKim, Joong Kyun / Kim, Yong-Seog / Weber, Larry F. et al. | 2017
- 3269
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Multilevel Low-Voltage Power Supplies Capable of Integrating With High-Voltage DevicesLiang, Lixiao / Lyu, Xinjiang / Cheng, Junji et al. | 2017
- 3275
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Hot-Carrier-Induced Degradations and Optimizations for Lateral DMOS Transistor With Multiple Floating Poly-Gate Field PlatesLiu, Siyang / Ren, Xiaofei / Fang, Yunchao et al. | 2017
- 3282
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Low-Loss SOI-LIGBT With Dual Deep-Oxide TrenchesZhang, Long / Zhu, Jing / Sun, Weifeng et al. | 2017
- 3287
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Optimized Dynamic $\text{R}_{ \mathrm{\scriptscriptstyle ON}}$ With p-Type Buried Layer Bridge in 700-V Triple RESURF nLDMOSMao, Kun / Nie, Hai / Chen, Zhu et al. | 2017
- 3287
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Optimized dynamic R.sub. with p-type buried layer bridge in 700-V triple RESURF nLDMOSKun Mao et al. | 2017
- 3293
-
Investigation on the Robustness During Short-Circuit Turn-off and Its Tradeoff Characteristics With Performance in IGBTsYang, Fei / Tan, Ji / Lu, Shuojin et al. | 2017
- 3298
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Observation of Interface Defects in Diamond Lateral p-n-Junction Diodes and Their Effect on Reverse Leakage CurrentIwasaki, Takayuki / Suwa, Taisuke / Yaita, Junya et al. | 2017
- 3303
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The impact of an ultrathin Y.sub. layer on GeO.sub. passivation in Ge MOS gate stacksYujin Seo et al. | 2017
- 3303
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The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate StacksSeo, Yujin / Lee, Tae In / Yoon, Chang Mo et al. | 2017
- 3308
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Thermal Characterization of LEDs Mounted on Substrates With Converging–Diverging and Diverging–Converging ChannelsChakravarthii, Dheepan M. K. / Devarajan, Mutharasu / Suvindraj, K. et al. | 2017
- 3316
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A Comprehensive Theoretical Analysis of Hole Ballistic Velocity in Si, SiGe, and Ge: Effect of Uniaxial Strain, Crystallographic Orientation, Body Thickness, and Gate ArchitectureTeherani, James T. et al. | 2017
- 3324
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New Understanding of Random Telegraph Noise Amplitude in Tunnel FETsChen, Cheng / Huang, Qianqian / Zhu, Jiadi et al. | 2017
- 3331
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A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform DopingBanaszeski da Silva, Mauricio / Tuinhout, Hans P. / Zegers-van Duijnhoven, Adrie et al. | 2017
- 3337
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Büttiker Probe-Based Modeling of TDDB: Application to Dielectric Breakdown in MTJs and MOS DevicesReza, Ahmed Kamal / Hassan, Mohammad Khaled / Roy, Kaushik et al. | 2017
- 3346
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A Closed-Form Solution for the Low-Current Collector Transit Time in Group IV and Group III-V HBTsSchroter, Michael / Nardmann, Tobias / Wedel, Gerald et al. | 2017
- 3353
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Modeling of Organic Permeable Base Transistor Based on Inverse of Transistor Efficiency ( ${I}_{C}$ / ${g}_{m}$ )Agrawal, Kalpana / Srivastava, Ritu / Rajput, S. S. et al. | 2017
- 3353
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Modeling of Organic Permeable Base Transistor Based on Inverse of Transistor Efficiency ( / )Agrawal, Kalpana et al. | 2017
- 3360
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Dielectric Properties of and Charge Transport in Columnar Microfibrous Thin Films of Parylene CKhawaji, Ibrahim H. / Chindam, Chandraprakash / Awadelkarim, Osama O. et al. | 2017
- 3368
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Dual MEMS Resonator Structure for Temperature Sensor ApplicationsCampanella, Humberto / Narducci, Margarita / Merugu, Srinivas et al. | 2017
- 3377
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A Switchable Bandpass Filter Employing RF MEMS Switches and Open-Ring ResonatorsZhang, Naibo / Mei, Lirong / Wang, Chunting et al. | 2017
- 3384
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Monocrystalline Diamond for Ions Detection at Low and High FluxesTorrisi, Lorenzo / Cutroneo, Mariapompea / Cannavo, Antonino et al. | 2017
- 3392
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Highly Tunable Narrow Bandpass MEMS FilterHafiz, Md Abdullah Al / Kosuru, Lakshmoji / Hajjaj, Amal Z. et al. | 2017
- 3399
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Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 °CMatthus, Christian David / Erlbacher, Tobias / Hess, Andreas et al. | 2017
- 3405
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Study on Radial Sheet Beam Electron Optical System for Miniature Low-Voltage Traveling-Wave TubeLi, Xinyi / Wang, Zhanliang / He, Tenglong et al. | 2017
- 3413
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Origin of Sideband and Spurious Noises in Microwave Oven MagnetronBaek, In-Keun / Sattorov, Matlabjon / Bhattacharya, Ranajoy et al. | 2017
- 3421
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Study of the Influence of Stray Magnetic Fields on the Operation of the European Gyrotron for ITEREll, Benjamin / Pagonakis, Ioannis Gr. / Gantenbein, Gerd et al. | 2017
- 3429
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Developing a Load-Line Concept to Study the Extended Interaction OscillatorsSoltani, Hooman Bahman / Abiri, Habibollah et al. | 2017
- 3437
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Spin FET Based on Graphene Nanoribbon in the Presence of Surface RoughnessChaghazardi, Zahra / Faez, Rahim / Touski, Shoeib Babaee et al. | 2017
- 3443
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Stability of MOSFET-Based Electronic Components in Wearable and Implantable SystemsJin, Xin / Jiang, Chunsheng / Song, Enming et al. | 2017
- 3452
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Enabling Energy-Efficient Nonvolatile Computing With Negative Capacitance FETLi, Xueqing / Sampson, John / Khan, Asif et al. | 2017
- 3459
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Modeling of a Vertical Tunneling Transistor Based on Graphene–MoS2 HeterostructureHorri, Ashkan / Faez, Rahim / Pourfath, Mahdi et al. | 2017
- 3466
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A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold RegionGholipour, Morteza et al. | 2017
- 3470
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A Tunnel Dielectric-Based Junctionless Transistor With Reduced Parasitic BJT ActionLahgere, Avinash / Kumar, Mamidala Jagadesh et al. | 2017
- 3476
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Design Space Exploration Considering Back-Gate Biasing Effects for 2D Negative-Capacitance Field-Effect TransistorsYou, Wei-Xiang / Su, Pin et al. | 2017
- 3482
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Resonant Tunneling and Quantum Cascading for Optimum Room-Temperature Generation of THz SignalsSirkeli, Vadim P. / Yilmazoglu, Oktay / Ong, Duu Sheng et al. | 2017
- 3489
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Analytical Model to Estimate FinFET’s ${\text I}_{\text {ON}}$ , ${\text I}_{\text{OFF}}$ , SS, and ${\rm V}_{T}$ Distribution Due to FERMittal, S. / Amita, / Shekhawat, A. S. et al. | 2017
- 3494
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Gate Driver Based on a-Si:H Thin-Film Transistors With Two-Step-Bootstrapping Structure for High-Resolution and High-Frame-Rate DisplaysLin, Chih-Lung / Chen, Fu-Hsing / Wang, Ming-Xun et al. | 2017
- 3498
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Energy-Efficient Versatile Memories With Ferroelectric Negative Capacitance by Gate-Strain EnhancementChiu, Yu-Chien / Cheng, Chun-Hu / Liou, Guan-Lin et al. | 2017
- 3502
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An Accurate Drain Current Model of Monolayer Transition-Metal Dichalcogenide Tunnel FETsHuh, In / Park, Sangchun / Shin, Mincheol et al. | 2017
- 3508
-
Transparent and Flexible Resistive Random Access Memory Based on Al2O3 Film With Multilayer ElectrodesKim, Myeongcheol / Choi, Kyung Cheol et al. | 2017
- 3511
-
Analysis of Short-Channel Effects in Junctionless DG MOSFETsXie, Qian / Wang, Zheng / Taur, Yuan et al. | 2017
- 3515
-
Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching ApplicationsSun, Ruize / Liang, Yung C. / Yeo, Yee-Chia et al. | 2017
- 3519
-
Investigation of unexpected latchup path between HV-LDMOS and LV-CMOS in a 0.25- ?m 60-V/5-V BCD technologyDai, Chia-Tsen et al. | 2017
- 3519
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Investigation of Unexpected Latchup Path Between HV-LDMOS and LV-CMOS in a 0.25- $\mu \text{m}$ 60-V/5-V BCD TechnologyDai, Chia-Tsen / Ker, Ming-Dou et al. | 2017
- 3524
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Correction to “Boron Nitride and Sapphire Windows for 95-GHz Gaussian RF Beam” [Aug 16 3257-3261]Kesari, V. / Singh, A. K. / Seshadri, R. et al. | 2017
- 3524
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Correction to “Boron Nitride and Sapphire Windows for 95-GHz Gaussian RF Beam”Kesari, Vishal / Singh, Arun Kumar / Seshadri, Rengaswamy et al. | 2017
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Table of contents| 2017
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IEEE Transactions on Electron Devices publication information| 2017
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IEEE Transactions on Electron Devices information for authors| 2017
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