Electrostatic Doping in Semiconductor Devices (English)
- New search for: Gupta, Gaurav
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In:
IEEE transactions on electron devices
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64
, 8
; 3044-3055
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2017
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ISSN:
- Article (Journal) / Print
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Title:Electrostatic Doping in Semiconductor Devices
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Published in:IEEE transactions on electron devices ; 64, 8 ; 3044-3055
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Place of publication:New York, NY
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Publication date:2017
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 64, Issue 8
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3044
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Electrostatic Doping in Semiconductor DevicesGupta, Gaurav / Rajasekharan, Bijoy / Hueting, Raymond J. E. et al. | 2017
- 3056
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Analytical Modeling of DG-MOSFET in Subthreshold Regime by Green’s Function ApproachNandi, Ashutosh / Pandey, Nilesh / Dasgupta, S. et al. | 2017
- 3063
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Impact of Gate/Spacer-Channel Underlap, Gate Oxide EOT, and Scaling on the Device Characteristics of a DG-RFETBhattacharjee, Abhishek / Dasgupta, Sudeb et al. | 2017
- 3071
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Analytical Estimation of Threshold Voltage Variability by Metal Gate Granularity in FinFETVardhan, P. Harsha / Mittal, Sushant / Ganguly, Swaroop / Ganguly, Udayan et al. | 2017
- 3077
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Localized Tunneling Phenomena of Nanometer Scaled High- ${K}$ Gate-StackLin, Po-Jui Jerry / Lee, Che-An Andy / Yao, Chih-Wei Kira / Lin, Hsin-Jyun Vincent / Watanabe, Hiroshi et al. | 2017
- 3084
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Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETsMedina-Bailon, Cristina / Padilla, Jose L. / Sampedro, Carlos / Alper, Cem / Gamiz, Francisco / Ionescu, Adrian Mihai et al. | 2017
- 3092
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Device-Circuit Analysis of Ferroelectric FETs for Low-Power LogicGupta, Shreya / Steiner, Mark / Aziz, Ahmedullah / Narayanan, Vijaykrishnan / Datta, Suman / Gupta, Sumeet Kumar et al. | 2017
- 3101
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Compact On-Wafer Test Structures for Device RF CharacterizationKazemi Esfeh, Babak / Ben Ali, Khaled / Raskin, Jean-Pierre et al. | 2017
- 3108
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Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology PlatformVisciarelli, Michele / Gnani, Elena / Gnudi, Antonio / Reggiani, Susanna / Baccarani, Giorgio et al. | 2017
- 3114
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Graded AlGaN Channel Transistors for Improved Current and Power Gain LinearityBajaj, Sanyam / Yang, Zhichao / Akyol, Fatih / Park, Pil Sung / Zhang, Yuewei / Price, Aimee L. / Krishnamoorthy, Sriram / Meyer, David J. / Rajan, Siddharth et al. | 2017
- 3120
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T-Shaped III-V Heterojunction Tunneling Field-Effect TransistorDubey, Prabhat Kumar / Kaushik, Brajesh Kumar et al. | 2017
- 3126
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Instability of Dynamic- R and Threshold Voltage in GaN-on-GaN Vertical Field-Effect TransistorsRuzzarin, M et al. | 2017
- 3126
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Instability of dynamic- R.sub.ON and threshold voltage in GaN-on-GaN vertical field-effect transistorsRuzzarin, M et al. | 2017
- 3126
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Instability of Dynamic- $R_{\text ON}$ and Threshold Voltage in GaN-on-GaN Vertical Field-Effect TransistorsRuzzarin, M. / Meneghini, M. / Bisi, D. / Sun, M. / Palacios, T. / Meneghesso, G. / Zanoni, E. et al. | 2017
- 3132
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Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of TemperatureWarnock, Shireen / Lemus, Allison / Joh, Jungwoo / Krishnan, Srikanth / Pendharkar, Sameer / del Alamo, Jesus A. et al. | 2017
- 3139
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Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTsLi, Yi / Guo, Yaxiong / Zhang, Kai / Zou, Xuming / Wang, Jingli / Kong, Yuechan / Chen, Tangsheng / Jiang, Changzhong / Fang, Guojia / Liu, Chuansheng et al. | 2017
- 3145
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Multifilamentary Conduction Modeling in Transition Metal Oxide-Based RRAMAsapu, Shiva / Maiti, Tanmoy et al. | 2017
- 3151
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Low-power forming free TiO.sub./HfO.sub.(2 - y)/TiO.sub. -trilayer RRAM devices exhibiting synaptic property characteristicsBousoulas, Panagiotis et al. | 2017
- 3151
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Low-Power Forming Free TiO2–x/HfO2–y/TiO2–x-Trilayer RRAM Devices Exhibiting Synaptic Property CharacteristicsBousoulas, Panagiotis / Michelakaki, Irini / Skotadis, Evangelos / Tsigkourakos, Menelaos / Tsoukalas, Dimitris et al. | 2017
- 3159
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Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM DevicesRodriguez-Fernandez, Alberto / Aldana, Samuel / Campabadal, Francesca / Sune, Jordi / Miranda, Enrique / Jimenez-Molinos, Francisco / Roldan, Juan Bautista / Gonzalez, Mireia Bargallo et al. | 2017
- 3167
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Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on PolyimideChen, Bo-Wei / Chen, Hsin-Lu / Chang, Ting-Chang / Hung, Yu-Ju / Huang, Shin-Ping / Zheng, Yu-Zhe / Lin, Yu-Ho / Liao, Po-Yung / Chen, Li-Hui / Yang, Jian-Wen et al. | 2017
- 3174
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Investigation of High-Performance ITO-Stabilized ZnO TFTs With Hybrid-Phase Microstructural ChannelsDeng, Sunbin / Chen, Rongsheng / Li, Guijun / Xia, Zhihe / Zhang, Meng / Zhou, Wei / Wong, Man / Kwok, Hoi-Sing et al. | 2017
- 3183
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Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film TransistorsHeo, Keun / Cho, Kyung-Sang / Choi, Jun Young / Han, Sangmin / Yu, Yun Seop / Park, Yonmook / Yoo, Gwangwe / Park, Jin-Hong / Hwang, Sung Woo / Lee, Sang Yeol et al. | 2017
- 3189
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Electro-Thermal Annealing Method for Recovery of Cyclic Bending Stress in Flexible a-IGZO TFTsLee, Myung Keun / Kim, Choong-Ki / Park, Jeong Woo / Kim, Eungtaek / Seol, Myeong-Lok / Park, Jun-Young / Choi, Yang-Kyu / Park, Sang-Hee Ko / Choi, Kyung Cheol et al. | 2017
- 3193
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Hydrogenated Amorphous Silicon Gate Driver With Low Leakage for Thin-Film Transistor Liquid Crystal Display ApplicationsLin, Chih-Lung / Deng, Ming-Yang / Wu, Chia-En / Hsu, Chih-Cheng / Lee, Chia-Lun et al. | 2017
- 3199
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A 4-M Pixel High Dynamic Range, Low-Noise CMOS Image Sensor With Low-Power Counting ADCMa, Cheng / Liu, Yang / Li, Yang / Zhou, Quan / Wang, Xinyang / Chang, Yuchun et al. | 2017
- 3206
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Low-Frequency Noise Performance of Al-Doped ZnO Nanorod Photosensors by a Low-Temperature Hydrothermal MethodWang, Zi-Hao / Yu, Hsin-Chieh / Yang, Chih-Chiang / Yeh, Hsin-Ting / Su, Yan-Kuin et al. | 2017
- 3213
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Fast Control of Haze Value Using Electrically Switchable Diffraction in a Fringe-Field Switching Liquid Crystal DeviceChoi, Tae-Hoon / Woo, Jae-Hyeon / Baek, Jong-Min / Choi, Yeongyu / Yoon, Tae-Hoon et al. | 2017
- 3219
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A Low-Temperature External Electron Retarding Electrode for Improving Vertical Green LED PerformanceTien, Ching-Ho / Ou, Sin-Liang / OuYang, Yi / Chen, Chien-Ming / Wuu, Dong-Sing et al. | 2017
- 3226
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Enhancing the Hole-Injection Efficiency of a Light-Emitting Diode by Increasing Mg Doping in the p-AlGaN Electron-Blocking LayerSu, Chia-Ying / Tu, Charng-Gan / Liu, Wei-Heng / Lin, Chun-Han / Yao, Yu-Feng / Chen, Hao-Tsung / Wu, Yuh-Renn / Kiang, Yean-Woei / Yang, Chih-Chung et al. | 2017
- 3234
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Enhancing the ultraviolet/visible rejection ratio of Mg.sub.O metal-semiconductor-metal photodetectors using oxygen-plasma treatmentHwang, J. D et al. | 2017
- 3234
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Enhancing the Ultraviolet/Visible Rejection Ratio of MgxZn1−xO Metal-Semiconductor-Metal Photodetectors Using Oxygen-Plasma TreatmentHwang, J. D. / Chang, Y. C. et al. | 2017
- 3239
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Temperature and Parasitic Photocurrent Effects in Dynamic Vision SensorsNozaki, Yuji / Delbruck, Tobi et al. | 2017
- 3246
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Improved Light Output Power of InGaN/GaN LED by Using Ultrasonic Spray Pyrolysis Deposited MgOLiu, Han-Yin / Lee, Ching-Sung / Yang, Yun-Chung et al. | 2017
- 3252
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Exo-Electron Emission From MgO Nanopowders on MgO Thin Film of Alternating Current Plasma Display Panels—Part I. Mechanism of Exo-Electron EmissionKim, Yong-Seog / Kim, Joong Kyun / Weber, Larry F. et al. | 2017
- 3261
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Exo-Electron Emission From MgO Nanopowders on MgO Thin Film of Alternating Current Plasma Display Panels—Part II. Relationship Between Exo-Electron Currents and Statistical DelayKim, Joong Kyun / Kim, Yong-Seog / Weber, Larry F. et al. | 2017
- 3269
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Multilevel Low-Voltage Power Supplies Capable of Integrating With High-Voltage DevicesLiang, Lixiao / Lyu, Xinjiang / Cheng, Junji / Chen, Xing Bi et al. | 2017
- 3275
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Hot-Carrier-Induced Degradations and Optimizations for Lateral DMOS Transistor With Multiple Floating Poly-Gate Field PlatesLiu, Siyang / Ren, Xiaofei / Fang, Yunchao / Sun, Weifeng / Su, Wei / Ma, Shulang / Lin, Feng / Liu, Yuwei / Sun, Guipeng et al. | 2017
- 3282
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Low-Loss SOI-LIGBT With Dual Deep-Oxide TrenchesZhang, Long / Zhu, Jing / Sun, Weifeng / Zhao, Minna / Chen, Jiajun / Huang, Xuequan / Shi, Longxing / Chen, Jian / Ding, Desheng et al. | 2017
- 3287
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Optimized Dynamic $\text{R}_{ \mathrm{\scriptscriptstyle ON}}$ With p-Type Buried Layer Bridge in 700-V Triple RESURF nLDMOSMao, Kun / Nie, Hai / Chen, Zhu / Yao, Yao / Du, Jiang et al. | 2017
- 3287
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Optimized dynamic R.sub. with p-type buried layer bridge in 700-V triple RESURF nLDMOSKun Mao et al. | 2017
- 3293
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Investigation on the Robustness During Short-Circuit Turn-off and Its Tradeoff Characteristics With Performance in IGBTsYang, Fei / Tan, Ji / Lu, Shuojin / Zhu, Yangjun et al. | 2017
- 3298
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Observation of Interface Defects in Diamond Lateral p-n-Junction Diodes and Their Effect on Reverse Leakage CurrentIwasaki, Takayuki / Suwa, Taisuke / Yaita, Junya / Kato, Hiromitsu / Makino, Toshiharu / Ogura, Masahiko / Takeuchi, Daisuke / Yamasaki, Satoshi / Hatano, Mutsuko et al. | 2017
- 3303
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The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate StacksSeo, Yujin / Lee, Tae In / Yoon, Chang Mo / Park, Bo-Eun / Hwang, Wan Sik / Kim, Hyungjun / Yu, Hyun-Yong / Cho, Byung Jin et al. | 2017
- 3303
-
The impact of an ultrathin Y.sub. layer on GeO.sub. passivation in Ge MOS gate stacksYujin Seo et al. | 2017
- 3308
-
Thermal Characterization of LEDs Mounted on Substrates With Converging–Diverging and Diverging–Converging ChannelsChakravarthii, Dheepan M. K. / Devarajan, Mutharasu / Suvindraj, K. / Choo, C. L. et al. | 2017
- 3316
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A Comprehensive Theoretical Analysis of Hole Ballistic Velocity in Si, SiGe, and Ge: Effect of Uniaxial Strain, Crystallographic Orientation, Body Thickness, and Gate ArchitectureTeherani, James T. et al. | 2017
- 3324
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New Understanding of Random Telegraph Noise Amplitude in Tunnel FETsChen, Cheng / Huang, Qianqian / Zhu, Jiadi / Zhao, Yang / Guo, Lingyi / Huang, Ru et al. | 2017
- 3331
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A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform DopingBanaszeski da Silva, Mauricio / Tuinhout, Hans P. / Zegers-van Duijnhoven, Adrie / Wirth, Gilson I. / Scholten, Andries J. et al. | 2017
- 3337
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Büttiker Probe-Based Modeling of TDDB: Application to Dielectric Breakdown in MTJs and MOS DevicesReza, Ahmed Kamal / Hassan, Mohammad Khaled / Roy, Kaushik et al. | 2017
- 3346
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A Closed-Form Solution for the Low-Current Collector Transit Time in Group IV and Group III-V HBTsSchroter, Michael / Nardmann, Tobias / Wedel, Gerald et al. | 2017
- 3353
-
Modeling of Organic Permeable Base Transistor Based on Inverse of Transistor Efficiency ( ${I}_{C}$ / ${g}_{m}$ )Agrawal, Kalpana / Srivastava, Ritu / Rajput, S. S. et al. | 2017
- 3353
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Modeling of Organic Permeable Base Transistor Based on Inverse of Transistor Efficiency ( / )Agrawal, Kalpana et al. | 2017
- 3360
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Dielectric Properties of and Charge Transport in Columnar Microfibrous Thin Films of Parylene CKhawaji, Ibrahim H. / Chindam, Chandraprakash / Awadelkarim, Osama O. / Lakhtakia, Akhlesh et al. | 2017
- 3368
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Dual MEMS Resonator Structure for Temperature Sensor ApplicationsCampanella, Humberto / Narducci, Margarita / Merugu, Srinivas / Singh, Navab et al. | 2017
- 3377
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A Switchable Bandpass Filter Employing RF MEMS Switches and Open-Ring ResonatorsZhang, Naibo / Mei, Lirong / Wang, Chunting / Deng, Zhongliang / Yang, Jun / Guo, Qiuquan et al. | 2017
- 3384
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Monocrystalline Diamond for Ions Detection at Low and High FluxesTorrisi, Lorenzo / Cutroneo, Mariapompea / Cannavo, Antonino et al. | 2017
- 3392
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Highly Tunable Narrow Bandpass MEMS FilterHafiz, Md Abdullah Al / Kosuru, Lakshmoji / Hajjaj, Amal Z. / Younis, Mohammad I. et al. | 2017
- 3399
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Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 °CMatthus, Christian David / Erlbacher, Tobias / Hess, Andreas / Bauer, Anton J. / Frey, Lothar et al. | 2017
- 3405
-
Study on Radial Sheet Beam Electron Optical System for Miniature Low-Voltage Traveling-Wave TubeLi, Xinyi / Wang, Zhanliang / He, Tenglong / Gong, Huarong / Duan, Zhaoyun / Wei, Yanyu / Gong, Yubin et al. | 2017
- 3413
-
Origin of Sideband and Spurious Noises in Microwave Oven MagnetronBaek, In-Keun / Sattorov, Matlabjon / Bhattacharya, Ranajoy / Kim, Seontae / Hong, Dongpyo / Min, Sun-Hong / Park, Gun-Sik et al. | 2017
- 3421
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Study of the Influence of Stray Magnetic Fields on the Operation of the European Gyrotron for ITEREll, Benjamin / Pagonakis, Ioannis Gr. / Gantenbein, Gerd / Illy, Stefan / Thumm, Manfred / Jelonnek, John et al. | 2017
- 3429
-
Developing a Load-Line Concept to Study the Extended Interaction OscillatorsSoltani, Hooman Bahman / Abiri, Habibollah et al. | 2017
- 3437
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Spin FET Based on Graphene Nanoribbon in the Presence of Surface RoughnessChaghazardi, Zahra / Faez, Rahim / Touski, Shoeib Babaee / Pourfath, Mahdi et al. | 2017
- 3443
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Stability of MOSFET-Based Electronic Components in Wearable and Implantable SystemsJin, Xin / Jiang, Chunsheng / Song, Enming / Fang, Hui / Rogers, John A. / Alam, Muhammad Ashraful et al. | 2017
- 3452
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Enabling Energy-Efficient Nonvolatile Computing With Negative Capacitance FETLi, Xueqing / Sampson, John / Khan, Asif / Ma, Kaisheng / George, Sumitha / Aziz, Ahmedullah / Gupta, Sumeet Kumar / Salahuddin, Sayeef / Chang, Meng-Fan / Datta, Suman et al. | 2017
- 3459
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Modeling of a Vertical Tunneling Transistor Based on Graphene–MoS2 HeterostructureHorri, Ashkan / Faez, Rahim / Pourfath, Mahdi / Darvish, Ghafar et al. | 2017
- 3466
-
A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold RegionGholipour, Morteza et al. | 2017
- 3470
-
A Tunnel Dielectric-Based Junctionless Transistor With Reduced Parasitic BJT ActionLahgere, Avinash / Kumar, Mamidala Jagadesh et al. | 2017
- 3476
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Design Space Exploration Considering Back-Gate Biasing Effects for 2D Negative-Capacitance Field-Effect TransistorsYou, Wei-Xiang / Su, Pin et al. | 2017
- 3482
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Resonant Tunneling and Quantum Cascading for Optimum Room-Temperature Generation of THz SignalsSirkeli, Vadim P. / Yilmazoglu, Oktay / Ong, Duu Sheng / Preu, Sascha / Kuppers, Franko / Hartnagel, Hans L. et al. | 2017
- 3489
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Analytical Model to Estimate FinFET’s ${\text I}_{\text {ON}}$ , ${\text I}_{\text{OFF}}$ , SS, and ${\rm V}_{T}$ Distribution Due to FERMittal, S. / Amita, / Shekhawat, A. S. / Ganguly, S. / Ganguly, U. et al. | 2017
- 3494
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Gate Driver Based on a-Si:H Thin-Film Transistors With Two-Step-Bootstrapping Structure for High-Resolution and High-Frame-Rate DisplaysLin, Chih-Lung / Chen, Fu-Hsing / Wang, Ming-Xun / Lai, Po-Cheng / Tseng, Chin-Hsien et al. | 2017
- 3498
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Energy-Efficient Versatile Memories With Ferroelectric Negative Capacitance by Gate-Strain EnhancementChiu, Yu-Chien / Cheng, Chun-Hu / Liou, Guan-Lin / Chang, Chun-Yen et al. | 2017
- 3502
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An Accurate Drain Current Model of Monolayer Transition-Metal Dichalcogenide Tunnel FETsHuh, In / Park, Sangchun / Shin, Mincheol / Choi, Woo Young et al. | 2017
- 3508
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Transparent and Flexible Resistive Random Access Memory Based on Al2O3 Film With Multilayer ElectrodesKim, Myeongcheol / Choi, Kyung Cheol et al. | 2017
- 3511
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Analysis of Short-Channel Effects in Junctionless DG MOSFETsXie, Qian / Wang, Zheng / Taur, Yuan et al. | 2017
- 3515
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Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching ApplicationsSun, Ruize / Liang, Yung C. / Yeo, Yee-Chia / Zhao, Cezhou et al. | 2017
- 3519
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Investigation of Unexpected Latchup Path Between HV-LDMOS and LV-CMOS in a 0.25- $\mu \text{m}$ 60-V/5-V BCD TechnologyDai, Chia-Tsen / Ker, Ming-Dou et al. | 2017
- 3519
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Investigation of unexpected latchup path between HV-LDMOS and LV-CMOS in a 0.25- ?m 60-V/5-V BCD technologyDai, Chia-Tsen et al. | 2017
- 3524
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Correction to “Boron Nitride and Sapphire Windows for 95-GHz Gaussian RF Beam”Kesari, Vishal / Singh, Arun Kumar / Seshadri, Rengaswamy / Kamath, Sudhir et al. | 2017
- 3524
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Correction to “Boron Nitride and Sapphire Windows for 95-GHz Gaussian RF Beam” [Aug 16 3257-3261]Kesari, V. / Singh, A. K. / Seshadri, R. / Kamath, S. et al. | 2017
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