Journal of Materials Science: Materials in Electronics
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 677
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Preface: 2007 Semiconducting and Insulating Materials ConferenceWang, Zhiming M. / Kiesel, Peter et al. | 2008
- 678
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A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor depositionZvanut, M. E. / Ngetich, G. / Chung, H. J. et al. | 2007
- 682
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Optical and structural properties of SiC nanocrystalsMorales Rodriguez, M. / Díaz Cano, A. / Torchynska, T. V. et al. | 2007
- 687
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Shallow and deep donors in n-type ZnO characterized by admittance spectroscopySeghier, D. / Gislason, H. P. et al. | 2007
- 692
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Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chainsStrelchuk, V. V. / Mazur, Yu. I. / Wang, Zh. M. et al. | 2007
- 699
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Optical spectroscopy of a semi-insulating GaAs/AlGaAs multiple quantum well system near double exciton–polariton and Bragg resonanceChaldyshev, V. V. / Shkolnik, A. S. / Evtikhiev, V. P. et al. | 2007
- 704
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The effects of Al doping on the optical constants of ZnO thin films prepared by spray pyrolysis methodCaglar, Mujdat / Ilican, Saliha / Caglar, Yasemin et al. | 2007
- 709
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Radiation effects in natural quartz crystalsBahadur, Harish / Tissoux, Hélène / Usami, Teruo et al. | 2007
- 714
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Independent control of InAs quantum dot density and size on $ Al_{x} $$ Ga_{1–x} $As surfacesAndrews, Aaron Maxwell / Schramböck, Matthias / Roch, Tomas et al. | 2007
- 720
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A graphical peak analysis method for characterizing impurities in SiC, GaN and diamond from temperature-dependent majority-carrier concentrationMatsuura, Hideharu et al. | 2007
- 727
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The recent advances of research on p-type ZnO thin filmDai, L. P. / Deng, H. / Mao, F. Y. et al. | 2007
- 735
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Buffer-trapping effects on current slump in AlGaN/GaN HEMTsNakajima, Atsushi / Horio, Kazushige et al. | 2007
- 740
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Structural and magnetic properties of MnAs/GaAs ferromagnetic semiconductor nanocomposite materialKwiatkowski, Adam / Wasik, Dariusz / Kamińska, Maria et al. | 2007
- 744
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Dependency of oxygen partial pressure on the characteristics of ZnO films grown by radio frequency magnetron sputteringAhn, C. H. / Kim, Y. Y. / Kang, S. W. et al. | 2007
- 749
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Temperature dependence of ZnO thin films grown on Si substrateKim, Y. Y. / Ahn, C. H. / Kang, S. W. et al. | 2007
- 755
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Growth and characteristics of ternary $ Zn_{1−x} $$ Mg_{x} $O films using magnetron co-sputteringKang, Si Woo / Kim, Young Yi / Ahn, Cheol Hyoun et al. | 2007
- 760
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Morphology control of 1D ZnO nanostructures grown by metal-organic chemical vapor depositionKim, Dong Chan / Kong, Bo Hyun / Cho, Hyung Koun et al. | 2007
- 764
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Deep UV light emitting diodes grown by gas source molecular beam epitaxyNikishin, Sergey / Borisov, Boris / Kuryatkov, Vladimir et al. | 2007
- 770
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InP based semiconductor structures for radiation detectionProcházková, Olga / Grym, Jan / Pekárek, Ladislav et al. | 2007
- 776
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Low thermal drift in highly sensitive doped channel $ Al_{0.3} $$ Ga_{0.7} $As/GaAs/$ In_{0.2} $$ Ga_{0.8} $As micro-Hall elementKunets, Vasyl P. / Dobbert, Julia / Mazur, Yuriy I. et al. | 2007
- 783
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Electrical characterization of 4H–SiC Schottky diodes with a $ RuO_{2} $ and a $ RuWO_{x} $ Schottky contactsBuc, Dalibor / Stuchlikova, Lubica / Harmatha, Ladislav et al. | 2007
- 788
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Pulsed laser deposited ZnO films and their humidity sensing behaviorDixit, Shobhna / Srivastava, Anchal / Shukla, R. K. et al. | 2007
- 793
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Negative magnetoresistance in SiC heteropolytype junctionsLebedev, Alexander Alexandrovich / Abramov, P. L. / Agrinskaya, N. V. et al. | 2007
- 797
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Investigation of deep levels in InGaAs channels comprising thin layers of InAsDobbert, J. / Kunets, Vas. P. / Morgan, T. Al. et al. | 2007
- 801
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Low temperature crystallization of amorphous silicon carbide thin films for p–n junction devices fabricationHossain, Maruf / Yun, Minseong / Korampally, Venumadhav et al. | 2007
- 805
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Molecular beam epitaxy of semipolar AlN($$11\bar{2}2$$) and GaN($$11\bar{2}2$$) on m-sapphireLahourcade, Lise / Bellet-Amalric, Edith / Monroy, Eva et al. | 2007
- 805
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Molecular beam epitaxy of semipolar AlN( Formula Not Shown ) and GaN( Formula Not Shown ) on m-sapphireLahourcade, L. / Bellet-Amalric, E. / Monroy, E. et al. | 2008
- 810
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Characterization of deep centers in semi-insulating SiC and $ HgI_{2} $: Application of discharge current transient spectroscopyMatsuura, Hideharu / Takahashi, Miyuki / Nagata, Shunji et al. | 2007
- 815
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Structural perfection of laterally overgrown GaN layers grown in polar- and non-polar directionsLiliental-Weber, Zuzanna / Ni, X. / Morkoc, H. et al. | 2007
- 821
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Latest developments in GaN-based quantum devices for infrared optoelectronicsMonroy, Eva / Guillot, Fabien / Leconte, Sylvain et al. | 2007
- 828
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Mn and other magnetic impurities in GaN and other III–V semiconductors – perspective for spintronic applicationsKaminska, Maria / Twardowski, Andrzej / Wasik, Dariusz et al. | 2007
- 835
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Nitrogen doping of SiC thin films deposited by RF magnetron sputteringFraga, Mariana Amorim / Massi, Marcos / Oliveira, Ivo C. et al. | 2007
- 841
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Structural and electrical properties of thermally evaporated 1,4-Bis-(2-hydroxyethylamino)-9,10-anthraquinone filmsBedi, R. K. / Bhatia, Sonik / Kaur, Navneet et al. | 2007
- 845
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Growth and characterization of III-N bulk crystalsFrazier, R. M. / Feigelson, B. N. / Twigg, M. E. et al. | 2007
- 849
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Cobalt substituted ZnO thin films: a potential candidate for spintronicsBhatti, Kanwal Preet / Malik, Vivek Kumar / Chaudhary, Sujeet et al. | 2007
- 855
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Investigation of $ NiO_{x} $-based contacts on p-GaNLiday, J. / Hotový, I. / Sitter, H. et al. | 2007
- 863
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Orientation and temperature dependence of the tensile behavior of GaN nanowires: an atomistic studyWang, Zhiguo / Zu, Xiaotao / Yang, Li et al. | 2007
- 868
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Microstructure and luminescence properties of Co-doped $ SnO_{2} $ nanoparticles synthesized by hydrothermal methodFang, L. M. / Zu, X. T. / Li, Z. J. et al. | 2008
- 875
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Cooperative Jahn–Teller transition in Li[$ Li_{x} $$ Mn_{2–x} $]$ O_{4} $: a muon-spin rotaion/relaxation (μSR) viewSugiyama, Jun / Mukai, Kazuhiko / Ikedo, Yutaka et al. | 2008
- 883
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Electronic and magnetic properties of novel layered cobalt dioxides Ax$ CoO_{2} $ with A = Li, Na, and KSugiyama, Jun / Ikedo, Yutaka / Russo, Peter L. et al. | 2008
- 894
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High-k gate stack $ Hf_{x} $$ Ti_{1−x} $ON/$ SiO_{2} $ for SiC MOS devicesLin, L. M. / Lai, P. T. et al. | 2008
- 898
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Depth profiles and concentration percentages of $ SiO_{2} $ and $ SiO_{x} $ induced by ion bombardment of a silicon (100) targetLee, Chin Shuang / Chen, Chia Chan / Hsu, Chin Shun et al. | 2008
- 902
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Tunneling currents through ultra thin $ HfO_{2} $/$ Al_{2} $$ O_{3} $/$ HfO_{2} $ triple layer gate dielectrics for advanced MIS devicesTyagi, Hitender Kumar / George, P. J. et al. | 2008
- 908
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Growth condition dependence of zinc oxide nanostructures on Si substrates in an electrochemical processCui, Jingbiao et al. | 2008