The European Physical Journal Applied Physics
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Table of contents
- 7
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Preface for DRIP X proceedingsLandesman (Chairman), Jean-Pierre / Montgomery (co-Chairman), Paul C. et al. | 2004
- 9
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Physical properties of two dimensional nets of quantum InGaAs wiresOrlov, L. K. / Ivina, N. L. / Alyabina, N. A. et al. | 2004
- 13
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Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEMUmeda, T. / Toda, A. / Mochizuki, Y. et al. | 2004
- 21
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Ultra thin gate oxide characterizationRoy, D. / Bruyere, S. / Rideau, D. et al. | 2004
- 29
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Defects in SiC substrates and epitaxial layers affecting semiconductor device performanceMüller, St. G. / Sumakeris, J. J. / Brady, M. F. et al. | 2004
- 37
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Defects in wide band-gap semiconductors: selective etching and calibration by complementary methodsWeyher, J. L. / Macht, L. et al. | 2004
- 43
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Non-destructive optical methods for assessing defects in production of Si or SiGe materialsHiggs, V. / Laurent, N. / Fellous, C. et al. | 2004
- 49
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Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEMArmigliato, A. / Balboni, R. / Frabboni, S. et al. | 2004
- 55
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Defect mapping in full-size multi-crystalline Si wafersOstapenko, S. / Romero, M. et al. | 2004
- 59
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From photon emission microscopy to Raman spectroscopy: Failure analysis in microelectronicsDe Wolf, I. / Rasras, M. et al. | 2004
- 67
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Spectroscopic techniques for the assessment of optoelectronic materials: application to laser diodesJiménez, J. / Cánovas, E. / Avella, M. et al. | 2004
- 75
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Resonant excitation of Er ion luminescence in a nanocrystalline silicon matrixGarcía, J. A. / Plugaru, R. / Méndez, B. et al. | 2004
- 81
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Cathodoluminescence microanalysis of porous GaP and InP structuresTiginyanu, I. M. / Langa, S. / Sirbu, L. et al. | 2004
- 85
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Characteristics of FeSi2 quantum dots on siliconDózsa, L. / Horváth, E. / Molnár, G. et al. | 2004
- 89
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Structural and optical characterization of a dispersion of nanocavities in a crystalline silicon matrixLeoni, E. / El Bouyadi, R. / Martinelli, L. et al. | 2004
- 93
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Lateral conductivity in GaAs/InAs quantum dot structuresDózsa, L. / Tóth, A. L. / Horváth, Zs. J et al. | 2004
- 97
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Light induced contrast in Kelvin Force Microscopy of GaN epilayersBozek, R. / Pakula, K. / Baranowski, J. et al. | 2004
- 101
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Atomic force microscopy: a powerful tool for surface defect and morphology inspection in semiconductor industryBorionetti, G. / Bazzali, A. / Orizio, R. et al. | 2004
- 107
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Cathodoluminescence study of widegap-semiconductor nanowiresSekiguchi, T. / Liu, Q. / Tanaka, T. et al. | 2004
- 111
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Transformation behavior of metastable defects induced in n-type silicon by hydrogen implantationTokuda, Y. / Sugiyama, T. / Kanazawa, S. et al. | 2004
- 115
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Study of the defects in oxygen implanted silicon subjected to neutron irradiation and high pressure annealingJung, W. / Kaniewska, M. / Misiuk, A. et al. | 2004
- 119
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Aluminum gettering in photovoltaic siliconChen, J. / Yang, D. / Wang, X. et al. | 2004
- 123
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Dislocation luminescence in plastically deformed silicon crystals: effect of dislocation intersection and oxygen decorationLeoni, E. / Binetti, S. / Pichaud, B. et al. | 2004
- 129
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Diminution of the activity of B atoms by H-induced defects in H2 and B2H6 co-implanted SiYokota, Katsuhiro / Nakase, Syuusaku / Nakamura, Kazuhiro et al. | 2004
- 133
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Electron irradiation effect on thermal donors in CZ-SiTakakura, K. / Ohyama, H. / Murakawa, H. et al. | 2004
- 137
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Characterization of metastable defects in hydrogen-implanted n-type siliconSugiyama, T. / Tokuda, Y. / Kanazawa, S. et al. | 2004
- 141
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Unusual properties of C-T characteristics of hydrogen implanted and annealed SiKaniewska, M. / Jung, W. / Antonova, I. V. et al. | 2004
- 145
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Thermoelectric properties of Czochralski-grown silicon at high pressure up to 16 GPaShchennikov, V. V. / Gudina, S. V. / Misiuk, A. et al. | 2004
- 149
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Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealingKlinger, D. / Auleytner, J. / Żymierska, D. et al. | 2004
- 155
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Defect-induced birefringence in crystalline silicon ingotsYamada, M. / Zui, N. / Chu, T. et al. | 2004
- 159
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Distribution and properties of oxide precipitates in annealed nitrogen doped 300 mm Si wafersAkhmetov, V. D. / Richter, H. / Seifert, W. et al. | 2004
- 163
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Calculation of boron segregation at the Si(100)/SiO2 interfaceFuruhashi, M. / Hirose, T. / Tsuji, H. et al. | 2004
- 167
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Annealing ambient controlled deep defect formation in InPZhao, Y. W. / Dong, Z. Y. / Duan, M. L. et al. | 2004
- 171
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Investigation of compensation defect centres in semi-insulating InP crystalsKaminski, P. / Pawlowski, M. / Kozłowski, R. et al. | 2004
- 177
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Effect of rare earth addition on GaAs-based layers grown by liquid phase epitaxyKrukovsky, S. I. / Popov, V. M. / Savkina, R. K. et al. | 2004
- 181
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Nonequilibrium carrier dynamics in heavily p-doped GaAsJarasiunas, K. / Aleksiejunas, R. / Malinauskas, T. et al. | 2004
- 185
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Quantitative analysis of low-frequency current oscillation in semi-insulating GaAsKiyama, M. / Yamada, M. / Tatsumi, M. et al. | 2004
- 189
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Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structuresHorváth, Zs. J. / Orlov, L. K. / Rakovics, V. et al. | 2004
- 193
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GaN epitaxial layers on inhomogeneous buffer layer: electrical and optical propertiesGrazzi, C. / Castaldini, A. / Cavallini, A. et al. | 2004
- 197
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Study of indium phosphide wafers treated by long time annealing at high temperaturesZdansky, K. / Pekarek, L. / Hlidek, P. et al. | 2004
- 201
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Capture kinetics at dislocation-related deep levels in III-V heterostructuresYastrubchak, O. / Wosinski, T. / Makosa, A. et al. | 2004
- 207
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Morphology and electrical properties of Pb1−xCdxTe/CdTe heterostructuresSaucedo, E. / Corregidor, V. / Fornaro, L. et al. | 2004
- 213
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DLTS study of deep centers created by Ar-ion bombardment in n- and p-type MBE AlGaAsKaniewska, M. / Sadowski, J. / Guziewicz, M. et al. | 2004
- 219
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Determination of localized trap parameters in organic semiconductors using charge based deep level transient spectroscopy (Q-DLTS)Nguyen, T. P. / Ip, J. / Gaudin, O. et al. | 2004
- 223
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Oxygen in GaAs and its relation to the EL3 defect investigated by TSC and PICTSWohlrab, A. / Gründig-Wendrock, B. / Jurisch, M. et al. | 2004
- 227
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Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayersDíaz-Guerra, C. / Piqueras, J. et al. | 2004
- 231
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Structural characterisation of $(11{\bar 2}0)$ 4H-SiC substrates by cathodoluminescence and X-ray topographyHidalgo, P. / Ottaviani, L. / Idrissi, H. et al. | 2004
- 231
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Structural characterisation of (1120) 4H-SiC substrates by cathodoluminescence and X-ray topographyHidalgo, P. / Ottaviani, L. / Idrissi, H. et al. | 2004
- 235
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Microscopic defects and homogeneity investigations in 4H-SiC epitaxial wafers by UV scanning photoluminescence spectroscopyEl Harrouni, I. / Bluet, J.-M. / Ziane, D. et al. | 2004
- 239
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Structural and electrical characterization of n+-type ion-implanted 6H-SiCGoghero, D. / Giannazzo, F. / Raineri, V. et al. | 2004
- 243
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Stacking faults in heavily nitrogen doped 4H-SiCIrmscher, K. / Doerschel, J. / Rost, H. -J. et al. | 2004
- 247
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Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structuresKamler, G. / Borysiuk, J. / Weyher, J. L. et al. | 2004
- 251
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Phonon assignments in GaN bulkKunert, H. W. et al. | 2004
- 255
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TEM observation of nanopipes in heteroepitaxial GaNJezierska, E. / Weyher, J. L. / Rudzinski, M. et al. | 2004
- 259
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Pyramidal defects in highly Mg-doped GaN: atomic structure and influence on optoelectronic propertiesLeroux, M. / Vennéguès, P. / Dalmasso, S. et al. | 2004
- 263
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Plastic relaxation through buried cracks in AlGaN/GaN heterostructuresBethoux, J.-M. / Vennéguès, P. / Laügt, M. et al. | 2004
- 267
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Optical characterization of bulk GaN silicon and magnesium doped: as grown, hydrogen implanted, and annealedKunert, H. W. / Dale, D. / Prinsloo, L. C. et al. | 2004
- 271
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Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum wellKamata, N. / Klausing, H. / Fedler, F. et al. | 2004
- 275
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Nanopipes in GaN: photo-etching and TEM studyLazar, S. / Weyher, J L / Macht, L. et al. | 2004
- 279
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Raman investigation of stress and phase transformation induced in silicon by indentation at high temperaturesKouteva-Arguirova, S. / Orlov, V. / Seifert, W. et al. | 2004
- 285
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Luminescence and EPR studies of defects in Si-SiO2 filmsBaran, M. / Bulakh, B. / Korsunska, N. et al. | 2004
- 289
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Scanning room temperature photoluminescence in SiNx:H layersTarasov, I. / Dybiec, M. / Ostapenko, S. et al. | 2004
- 293
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Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistorsAubry, R. / Dua, C. / Jacquet, J.-C. et al. | 2004
- 297
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Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopyYe, Xiaoling / Chen, Y. H. / Xu, Bo et al. | 2004
- 301
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Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methodsMisiuk, A. / Surma, B. / Bak-Misiuk, J. et al. | 2004
- 305
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The influence of crystal imperfections on the shape of exciton emission spectrum in ZnO single crystalsBulakh, B. / Khomenkova, L. / Kushnirenko, V. et al. | 2004
- 309
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Scattering tensors for semiconductors of C~6~v^4-P6~3 mc space group: GaN, ZnO, CdS, ZnS, and BeOKunert, H. W. et al. | 2004
- 309
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Scattering tensors for semiconductors of C46v–P63 mc space group: GaN, ZnO, CdS, ZnS, and BeOKunert, H. W. et al. | 2004
- 313
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Investigation of recombination processes involving defect-related states in (Ga,In)(As,Sb,N) compoundsKudrawiec, R. / Sek, G. / Misiewicz, J. et al. | 2004
- 317
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Mossbauer spectroscopy on Fe impurities in diamondWeyer, G. / Gunnlaugsson, H. P. / Dietrich, M. et al. | 2004
- 317
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Mössbauer spectroscopy on Fe impurities in diamondWeyer, G. / Gunnlaugsson, H. P. / Dietrich, M. et al. | 2004
- 321
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Manifestation of defects in phonon spectra of binary zinc-blende compoundsPolit, J. / Sheregii, E. M. / Cebulski, J. et al. | 2004
- 325
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Raman scattering characterization of residual strain and alloy composition in bulk Si1−xGex crystalIslam, M. R. / Yamada, M. / Abrosimov, N. V. et al. | 2004
- 329
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Investigation of silicon oxynitride and amorphous silicon multilayersSerenyi, M. / Frigeri, C. et al. | 2004
- 333
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Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructuresMartínez, O. / Pelosi, C. / Attolini, G. et al. | 2004
- 337
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Study of dislocations in strained-Si/Si0.8Ge0.2 heterostructures by EBIC, TEM and etching techniquesYuan, X. L. / Sekiguchi, T. / Ri, S. G. et al. | 2004
- 341
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Growth of ultra-thin and highly relaxed SiGe layers under in-situ introduction of point defectsLyutovich, K. / Oehme, M. / Ernst, F. et al. | 2004
- 345
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Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDsSalviati, G. / Rossi, F. / Armani, N. et al. | 2004
- 349
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Anomalous electrical properties of dislocation slip plane in SiEremenko, V. G. / Yakimov, E. B. et al. | 2004
- 353
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Comparative study on residual strain profiles in GaAs substrates grown by LEC and VB techniquesKawase, T. / Tatsumi, M. / Fukuzawa, M. et al. | 2004
- 357
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Quantitative determination of the doping level distribution in n-type GaAs using absorption mappingWellmann, P. J. / Albrecht, A. / Künecke, U. et al. | 2004
- 363
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Contact-free investigation of the EL2-defect in the surface of GaAs wafersGründig-Wendrock, B. / Dornich, K. / Hahn, T. et al. | 2004
- 367
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Defect imaging in ultra-thin SiGe (100) strain relaxed buffersWerner, J. / Lyutovich, K. / Parry, C. P. et al. | 2004
- 371
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Production of structurally perfect single crystals of CdTe and CdZnTeIvanov, Yu. M. / Artemov, V. V. / Kanevsky, V. M. et al. | 2004
- 375
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Ultrasonically stimulated temperature rise around dislocation: extended defect mapping and imagingSavkina, R. K. / Smirnov, A. B. / Tetyorkin, V. V. et al. | 2004
- 379
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In-depth analysis of the interfaces in InGaP/GaAs heterosystemsPelosi, C. / Attolini, G. / Frigeri, C. et al. | 2004
- 385
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Error analysis of Makyoh-topography surface height profile measurementsLukács, I. E. / Riesz, F. et al. | 2004
- 389
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High quality multicrystalline silicon grown by multi-stage solidification control methodNara, S. / Sekiguchi, T. / Chen, J. et al. | 2004
- 393
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Optical second harmonic imaging: a versatile tool to investigate semiconductor surfaces and interfacesScheidt, T. / Rohwer, E. G. / von Bergmann, H. M. et al. | 2004
- 399
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Evaluation of small scattering defects densities by laser scattering tomography: application to levitated glassesGall-Borrut, P. / Perret, D. / Drevet, B. et al. | 2004
- 403
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Influence of long-term defect diffusion on HgCdTe electronic structurePociask, M. / Pukowska, B. / Kisiel, A. et al. | 2004
- 407
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AFM and XRD studies of GaAs surface after anisotropic etchingDmitruk, N. L. / Kladko, V. P. / Konakova, R. V. et al. | 2004
- 411
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3D analysis of buried interfaces using interference microscopyBenatmane, A. / Montgomery, P. C. et al. | 2004
- 415
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Effect of high pressure-temperature on silicon layered structures as determined by X-ray diffraction and electron microscopyBak-Misiuk, J. / Misiuk, A. / Ratajczak, J. et al. | 2004
- 419
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Application of the Kim & Chair viscosity model to molten binary GaSb and InSb semiconductorsVincent, J. / Bermúdez, V. / Diéguez, E. et al. | 2004
- 423
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Formation of AlxGa1−xSb films over GaSb substrates by Al diffusionRuiz, C. M. / Barradas, N. P. / Alves, E. et al. | 2004
- 427
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Some structural aspects of PbxCd1−xTe bulk materialSaucedo, E. / Fornaro, L. / Corregidor, V. et al. | 2004
- 431
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Wavy growth and related defects in strain-balanced multi-quantum wells for photovoltaic devicesNasi, L. / Ferrari, C. / Lanzi, A. et al. | 2004
- 435
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Low temperature drive-in of surface-deposited copper in silicon wafersPolignano, M. L. / Caputo, D. / Carpanese, C. et al. | 2004
- 439
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Characterization of SOI wafers by synchrotron X-ray topographyShimura, T. / Fukuda, K. / Yasutake, K. et al. | 2004
- 443
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The use of neighbourhood intensity comparisons, morphological gradients and Fourier analysis for automated precipitate counting & Pendellösung fringe analysis in X-ray topographyMurphy, G. / Whelan, P. F. / McNally, P. J. et al. | 2004
- 443
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The use of neighbourhood intensity comparisons, morphological gradients and Fourier analysis for automated precipitate counting & Pendellosung fringe analysis in X-ray topographyMurphy, G. / Whelan, P. F. / McNally, P. J. et al. | 2004
- 447
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Photoluminescence and X-ray topography measurements on oxidation-induced stacking faults in silicon wafersKakui, H. / Fukuzawa, M. / Shiraishi, Y. et al. | 2004
- 451
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Simultaneous quantitative determination of strain and defect profiles within the active region along high-power diode laser bars by micro-photocurrent mappingGerhardt, A. / Tomm, J. W. / Schwirzke-Schaaf, S. et al. | 2004
- 455
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Imaging of spontaneous emission from 980 nm tapered lasers with windowed N-contactsBull, S. / Wykes, J. G. / Andrianov, A. V. et al. | 2004
- 461
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Quantitative spectroscopic strain analysis of AlGaAs-based high-power diode laser devicesTomm, J. W. / Gerhardt, A. / Biermann, M. L. et al. | 2004
- 465
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Effect of the p+-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasersPommiès, M. / Avella, M. / Patriarche, G. et al. | 2004
- 469
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The study of strain and defects in high power laser diodes by spectroscopically resolved photoluminescence microscopyBull, S. / Andrianov, A. V. / Harrison, I. et al. | 2004
- 475
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Backside failure analysis of GaAs MMIC ASICsBeaudoin, F. / Carisetti, D. / Clement, J. C. et al. | 2004
- 479
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Microscopic C-V measurements of SOI wafers by scanning capacitance microscopyIshida, T. / Yoshida, H. / Kishino, S. et al. | 2004
- 483
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FeB and CrB pair ressociation kinetics in imperfect Si controlled by contactless lifetime scan mapsPalais, O. / Hidalgo, P. / Martinuzzi, S. et al. | 2004
- 483
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FeB and CrB pair reassociation kinetics in imperfect Si controlled by contactless lifetime scan mapsPalais, O. / Hidalgo, P. / Martinuzzi, S. et al. | 2004
- 487
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Room-temperature diffusion of evaporated Fe atom into SOI materials characterized by scanning Kelvin-SPV methodNakamura, S. / Ikeda, H. / Watanabe, D. et al. | 2004
- 491
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Scanning kelvin-probe characterization of heavy metal contamination in patterned SIMOX wafersNakamura, S. / Ikeda, H. / Watanabe, D. et al. | 2004
- 495
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Non-contact C-V measurements of ultra thin dielectricsEdelman, P. / Savtchouk, A. / Wilson, M. et al. | 2004
- 499
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Interface recombination velocity measurement by a contactless microwave techniqueAhrenkiel, R. K. / Dashdorj, J. et al. | 2004
- 503
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Mapping of minority carrier diffusion length and heavy metal contamination with ultimate surface photovoltage methodLagowski, J. / Aleynikov, A. / Savtchouk, A. et al. | 2004