Diamond and related materials : international journal on the science and technology of diamond and related materials
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Table of contents
- 1243
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Progress in the study of optical and related properties of SiC since 1992Choyke, W.J. et al. | 1997
- 1249
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Defects formation in sublimation grown 6H-SiC single crystal boulesMadar, R. et al. | 1997
- 1262
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Sublimation growth of 4H- and 6H-SiC boule crystalsHeydemann, V.D. et al. | 1997
- 1266
-
Growth of SiC from the liquid phase: Wetting and dissolution of SiCSyväjärvi, M. et al. | 1997
- 1269
-
The kinetic growth model applied to micropipes in 6H-SiCHeindl, J. et al. | 1997
- 1272
-
Growth-related structural defects in seeded sublimation-grown SiCTuominen, M. et al. | 1997
- 1276
-
Surface polarity dependence in step-controlled epitaxy: Progress in SiC epitaxyMatsunami, H. et al. | 1997
- 1282
-
Growth and doping via gas-source molecular beam epitaxy of SiC and SiC-AlN heterostructures and their microstructural and electrical characterizationKern, R.S. et al. | 1997
- 1289
-
High quality 4H-SiC grown on various substrate orientationsHenry, A. et al. | 1997
- 1293
-
Hydrogen incorporation in epitaxial layers of 4H- and 6H-silicon carbide grown by vapor phase epitaxySchöner, A. et al. | 1997
- 1297
-
The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour depositionHallin, C. et al. | 1997
- 1301
-
SiC and group III nitride growth in MOVPE production reactorsBeccard, R. et al. | 1997
- 1306
-
Growth of SiC films obtained by LPCVDClavaguera-Mora, M.T. et al. | 1997
- 1311
-
Chemical conversion of Si to SiC by solid source MBE and RTCVDPezoldt, J. et al. | 1997
- 1316
-
Hexagonal and cubic SiC thin films on SiC deposited by solid source MBEFissel, A. et al. | 1997
- 1321
-
Hydrogen-, boron-, and hydrogen-boron-related low temperature photoluminescence of 6H-SiCPeppermüller, C. et al. | 1997
- 1324
-
Carrier lifetimes in SiC, studied by time resolved photoluminescence spectroscopyBergman, J.P. et al. | 1997
- 1329
-
Analysis of transport properties of -SiC films: determination of donor density and compensation ratioContreras, S. / Dezauzier, C. / Thomas, P. et al. | 1997
- 1329
-
Analysis of transport properties of b-SiC films: Determination of donor density and compensation ratioContreras, S. et al. | 1997
- 1333
-
Radiation-induced defect centers in 4H silicon carbideDalibor, T. et al. | 1997
- 1338
-
Thermal properties of b-SiC epitaxial layers between 150 (degree)C and 500 (degree)C measured by using microstructuresWagner, C. et al. | 1997
- 1338
-
Thermal properties of -SiC epitaxial layers between 150 C and 500 C measured by using microstructuresWagner, C. / Kroetz, G. et al. | 1997
- 1342
-
Valence band dispersion of hexagonal SiCWellenhofer, G. et al. | 1997
- 1346
-
Polytypism and surface structure of SiCKäckell, P. et al. | 1997
- 1349
-
Structure and morphology of SiC surfaces studied by LEED, AES, HREELS and STMStarke, U. et al. | 1997
- 1353
-
Investigation of modified 3C SiC(100) surfaces by surface-sensitive techniquesBalster, T. et al. | 1997
- 1358
-
Angle resolved photoemission and the band structure of 6H-SiCHollering, M. et al. | 1997
- 1362
-
Topology of twin junctions in epitaxial b-SiCPapaioannou, V. et al. | 1997
- 1362
-
Topology of twin junctions in epitaxial -SiCPapaioannou, V. / Komninou, P. / Dimitrakopulos, G. P. et al. | 1997
- 1365
-
Micropipe defects and voids at b-SiC-Si(100) interfacesScholz, R. et al. | 1997
- 1365
-
Micropipe defects and voids at -SiC/Si(100) interfacesScholz, R. / Goesele, U. / Niemann, E. et al. | 1997
- 1369
-
Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafersEllison, A. et al. | 1997
- 1374
-
Nonlinear optical mapping of 3C-inclusions in 6H-SiC-epilayersMeyer, C. et al. | 1997
- 1378
-
Deep luminescent centres in electron-irradiated 6H SiCSon, N.T. et al. | 1997
- 1381
-
Optically detected magnetic resonance studies of defects in 3C SiC epitaxial layersSon, N.T. et al. | 1997
- 1385
-
Optical investigation of thick 3C-SiC layers deposited on bulk silicon by CVDBluet, J.M. et al. | 1997
- 1388
-
Characterization of electrically active deep level defects in 4H and 6H SiCDoyle, J.P. et al. | 1997
- 1392
-
High field-high temperature performance of semi-insulating silicon carbideSudarshan, T.S. et al. | 1997
- 1396
-
OBIC studies on 6H-SiC Schottky rectifiers with different surface pretreatmentsFrischholz, M. et al. | 1997
- 1400
-
SiC device technology: Remaining issuesPalmour, J.W. et al. | 1997
- 1405
-
Silicon carbide for microwave power applicationsBrylinski, C. et al. | 1997
- 1414
-
Aluminium implantation of p-SiC for ohmic contactsSpie, L. et al. | 1997
- 1420
-
Fabrication of high-quality oxides on SiC by remote PECVDGölz, A. et al. | 1997
- 1424
-
An interface study of vapor-deposited rhenium with the two (0001) polar faces of single crystal 6H-SiCKennou, S. et al. | 1997
- 1428
-
TEM study of Ni and Ni2Si ohmic contacts to SiCPécz, B. et al. | 1997
- 1432
-
Ion beam assisted deposition of a tungsten compound layer on 6H-silicon carbideWeishart, H. et al. | 1997
- 1436
-
Hafnium, cadmium and indium impurities in 4H-SiC observed by perturbed angular correlation spectroscopyLicht, T. et al. | 1997
- 1440
-
Nuclear transmutation doping of 6H-silicon carbide with phosphorousHeissenstein, H. et al. | 1997
- 1445
-
Investigation of the effects of high temperature implantation and post implantation annealing on the electrical behavior of nitrogen implanted b-SiC filmsReichert, W. et al. | 1997
- 1445
-
Investigation of the effects of high temperature implantation and post implantation annealing on the electrical behavior of nitrogen implanted -SIC filmsReichert, W. / Lossy, R. / Gonzalez Sirgo, M. et al. | 1997
- 1448
-
b-SiC films on SOI substrates for high temperature applicationsReichert, W. et al. | 1997
- 1448
-
-SiC films on SOI substrates for high temperature applicationsReichert, W. / Obermeier, E. / Stoemenos, J. et al. | 1997
- 1451
-
Surface chemistry of 6H-SiC(0001) after reactive ion etchingSieber, N. et al. | 1997
- 1456
-
Preferential etching of SiC crystalsYakimova, R. et al. | 1997
- 1459
-
Schottky contact investigation on reactive ion etched 6H -SiCConstantinidis, G. / Kuzmik, J. / Michelakis, K. et al. | 1997
- 1459
-
Schottky contact investigation on reactive ion etched 6H a-SiCConstantinidis, G. et al. | 1997
- 1463
-
Comparative investigation of ECR-RIE patterns on Si and C faces of 6H-SiC using a CF4-O2 gas mixtureBonnot, R. et al. | 1997
- 1467
-
Anisotropic oxidation of silicon carbideChristiansen, K. et al. | 1997
- 1472
-
"Carbon cluster model" for electronic states at SiC-SiO2 interfacesBassler, M. et al. | 1997
- 1476
-
Investigation of walk-out phenomena in SiC mesa diodes with SiO2-Si3N4 passivationOvuka, Z. et al. | 1997
- 1480
-
Overview of SiC power electronicsChelnokov, V.E. et al. | 1997
- 1485
-
2.5 kV ion-implanted p+n diodes in 6H-SiCRottner, K.H. et al. | 1997
- 1489
-
High field and high temperature stress of n-SiC MOS capacitorsBano, E. et al. | 1997
- 1494
-
Low frequency noise in silicon carbide Schottky diodesAnghel, L. et al. | 1997
- 1497
-
Passivation of interface traps in MOS-Devices on n- and p-type 6H-SiCStein von Kamienski, E.G. et al. | 1997
- 1500
-
Numerical study of avalanche breakdown of 6H-SiC planar p-n junctionsStefanov, E. et al. | 1997
- 1504
-
Temperature dependence of electrical properties of 6H-SiC buried gate JFETRaynaud, C. et al. | 1997
- 1508
-
Microwave Power MESFET on 4H-SiCNoblanc, O. et al. | 1997
- 1512
-
The potential of SiC and GaN for application in high speed devicesSchwierz, F. et al. | 1997
- 1515
-
Thermodynamics and high-Pressure growth of (Al, Ga, In)N single crystalsKrukowski, S. et al. | 1997
- 1524
-
Residual strains in GaN grown on 6H-SiCNikitina, I.P. et al. | 1997
- 1528
-
Structural and electrical properties of Schottky barriers on n-GaNKalinina, E.V. et al. | 1997
- 1532
-
Structural properties of GaN grown on SiC substrates by hydride vapor phase epitaxyMelnik, Y. et al. | 1997
- 1536
-
Contactless characterisation of 2D-electrons in GaN-AlGaN HFETsAlause, H. et al. | 1997
- 1539
-
Identification of the cubic and hexagonal polytypes of GaN with X-ray absorption measurementsKatsikini, M. et al. | 1997
- 1542
-
Colour sensing applications of hydrogenated amorphous silicon carbideMüller, G. et al. | 1997
- 1547
-
Surface and bulk effects in ex-situ hydrogenated a-SiC thin filmsKalomiros, J. et al. | 1997
- 1547
-
Surface and bulk effects in ex-situ hydrogenated -SiC thin filmsKalomiros, J. / Paloura, E. C. / Janowitz, C. et al. | 1997
- 1550
-
Optical study of boron nitride thin films prepared by plasma-enhanced chemical vapor depositionPolo, M.C. et al. | 1997
- 1555
-
Electrical properties of PECVD amorphous silicon-carbon alloys from amorphous-crystalline heterojunctionsMarsal, L.F. et al. | 1997
- 1559
-
Effects of thermal and laser annealing on silicon carbide nanopowder produced in radio frequency glow dischargeViera, G. et al. | 1997
- 1564
-
Emission and excitation spectra of silicon-related luminescent centers in CVD-grown diamond filmsRossi, M.C. et al. | 1997
- 1568
-
Amorphous GaAs1-xNx thin films on crystalline Si substrates: Growth and characterizationsLollman, D. et al. | 1997
- 1573
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Conference Calendar| 1997
- 1575
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Author Index| 1997
- 1581
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Subject Index| 1997
-
Preface| 1997
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Organizers and Sponsors| 1997