-SiC deposited on SIMOX substrates: Characterization of the SiC/SOI system at elevated temperatures (English)
- New search for: Reichert, W.
- New search for: Lossy, R.
- New search for: Gonzalez Sirgo, J. M.
- New search for: Obermeier, E.
- New search for: Reichert, W.
- New search for: Lossy, R.
- New search for: Gonzalez Sirgo, J. M.
- New search for: Obermeier, E.
- New search for: Nakashima, S.
In:
Silicon carbide and related materials
;
129-132
;
1996
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ISBN:
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ISSN:
- Conference paper / Print
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Title:-SiC deposited on SIMOX substrates: Characterization of the SiC/SOI system at elevated temperatures
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Contributors:Reichert, W. ( author ) / Lossy, R. ( author ) / Gonzalez Sirgo, J. M. ( author ) / Obermeier, E. ( author ) / Nakashima, S.
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Conference:International conference; 6th, Silicon carbide and related materials ; 1995 ; Kyoto; Japan
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Published in:Silicon carbide and related materials ; 129-132CONFERENCE SERIES- INSTITUTE OF PHYSICS ; 142 ; 129-132
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Publisher:
- New search for: Institute of Physics Publishing
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Publication date:1996-01-01
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Size:4 pages
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Remarks:Also known as ICSCRM-95
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ISBN:
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ISSN:
-
Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Prospects for development of SiC power devicesBaliga, B. J. et al. | 1996
- 7
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Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diodeAkasaki, I. / Amano, H. / Suemune, I. et al. | 1996
- 11
-
Crystal growth of bulk SiCTairov, Y. M. et al. | 1996
- 17
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Recent progress in SiC crystal growthTsvetkov, V. F. / Allen, S. T. / Kong, H. S. / Carter, C. H. et al. | 1996
- 23
-
Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayersLarkin, D. J. et al. | 1996
- 29
-
Use of Ta container materials for quality improvement of SiC crystals grown by the sublimation techniqueHofmann, D. / Karpov, S. Y. / Makarov, Y. N. / Mokhov, E. N. et al. | 1996
- 29
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Use of Ta container material for quality improvement of SiC crystals grown by the sublimation techniqueHofmann, D. / Karpov, S. Y. / Makarov, Y. N. / Mokhov, E. N. et al. | 1996
- 33
-
Growth of silicon carbide ingots by the modified Lely method with "in situ" sublimation etchingAnikin, M. M. / Madar, R. / Rouault, A. / Garcon, I. et al. | 1996
- 37
-
The role of residual impurities in SiC grown by physical vapor transportGlass, R. C. / Augustine, G. / Balakrishna, V. / Hobgood, H. M. et al. | 1996
- 41
-
4H-SiC single crystal ingots grown on 6H-SiC and 15R-SiC seedsMaltsev, A. A. / Maksimov, A. Y. / Yushin, N. K. et al. | 1996
- 45
-
Control of the rate-determining step of the silicon carbide sublimation growthTuominen, M. / Yakimova, R. / Bakin, A. S. / Ivanov, I. G. et al. | 1996
- 49
-
Sublimation growth of 6H-SiC bulkTakanaka, N. / Nishino, S. / Saraie, J. et al. | 1996
- 53
-
Growth kinetics of various vapor-grown SiCKaneko, T. / Sone, H. / Miyakawa, N. / Naka, M. et al. | 1996
- 57
-
Sublimation growth of cubic SiC bulkYoshikawa, T. / Nishino, S. / Saraie, J. et al. | 1996
- 61
-
The effect of source powder height on the growth rate of 3C-SiC grown by the sublimation techniqueJayatirtha, H. M. / Spencer, M. G. et al. | 1996
- 65
-
Fabrication of low resistivity n-type 6H and 4H SiC substrates by the sublimation growthOnoue, K. / Nishikawa, T. / Katsuno, M. / Ohtani, N. et al. | 1996
- 69
-
Excess phase formation during sublimation growth of silicon carbideKarpov, S. Y. / Makarov, Y. N. / Ramm, M. S. / Talalaev, R. A. et al. | 1996
- 73
-
Micropipes migration mechanisms in silicon carbideAvrov, D. D. / Bakin, A. S. / Dorozhkin, S. I. et al. | 1996
- 77
-
Effect of tilt angle on the morphology of SiC epitaxial films grown on vicinal (0001)SiC substratesPowell, J. A. / Larkin, D. J. / Abel, P. B. / Zhou, L. et al. | 1996
- 81
-
A new reactor concept for epitaxial growth of SiCNordell, N. / Andersson, S. G. / Schoener, A. et al. | 1996
- 85
-
The mechanism of cubic SiC nucleation on off-axis substratesHallin, C. / Konstantinov, A. O. / Kordina, O. / Janzen, E. et al. | 1996
- 89
-
Homoepitaxial growth of 3C-SiC on 3C-SiC substrates grown by sublimation methodNishino, K. / Kimoto, T. / Matsunami, H. et al. | 1996
- 93
-
Film growth mechanism in synthesis of -SiC films using SiH~2Cl~2/C~2H~2/H~2-CVD reaction systemHong, L.-S. / Wu, C.-M. et al. | 1996
- 93
-
Film growth mechanism in synthesis of -SiC films by using SiH~2Cl~2/C~2H~2/H~2-CVD reaction systemHong, L.-S. / Wu, C.-M. et al. | 1996
- 97
-
Epitaxial growth of single crystalline 3C-SiC on Si from hexamethyldisilane and void formation mechanismWu, C. H. / Jacob, C. / Ning, X. J. / Pirouz, P. et al. | 1996
- 101
-
Silicon carbide liquid phase epitaxy in the Si-Sc-C systemYakimova, R. / Tuominen, M. / Bakin, A. S. / Fornell, J.-O. et al. | 1996
- 105
-
Vacuum sublimation growth: 6H-SiC "site-competition" epitaxy and study of 3C-SiC epitaxial layers grown on 6H-SiC substratesAndreev, A. N. / Smirnova, N. Y. / Scheglov, M. P. / Tregubova, A. S. et al. | 1996
- 109
-
Control of the polytypes (3C, 2H) of silicon carbide thin films deposited on pseudomorphic aluminum nitride (0001) surfacesTanaka, S. / King, S. W. / Kern, R. S. / Davis, R. F. et al. | 1996
- 109
-
Control of polytypes (3C, 2H) of silicon carbide thin film deposited on pseudomorphic aluminum nitride (0001) surfacesTanaka, S. / King, S. W. / Kern, R. S. / Davis, R. F. et al. | 1996
- 113
-
Single phase 3C-SiC(001)/Si(001) growth by surface controlled epitaxyKitabatake, M. et al. | 1996
- 117
-
Initial stages in heteroepitaxy of 3C-SiC on Si by gas source molecular beam epitaxyHatayama, T. / Fuyuki, T. / Matsunami, H. et al. | 1996
- 121
-
Adlayer-determined epitaxy growth of SiC on Si-stabilized -SiC(0001) by solid-source MBEFissel, A. / Kaiser, U. / Pfenninghaus, K. / Ducke, E. et al. | 1996
- 121
-
Adlayer-determined epitaxial growth of SiC on Si-stabilized -SiC(0001) by solid-source MBEFissel, A. / Kaiser, U. / Pfennighaus, K. / Ducke, E. et al. | 1996
- 121
-
Adlayer-determined epitaxial growth of SiC on Si-stabilized alpha-SiC(0001) by solid-source MBEFissel, A. / Kaiser, U. / Pfennighaus, K. / Ducke, E. / Schröter, B. / Richter, W. et al. | 1996
- 125
-
Highly nitrogen doped 3C-SiC grown by liquid phase epitaxyNikolaev, A. E. / Nikitina, I. P. / Dmitriev, V. A. et al. | 1996
- 129
-
Beta-SiC deposited on SIMOX substrates: characterization of the SiC/SOI system at elevated temperaturesReichert, W. / Lossy, R. / Gonzalez Sirgo, J.M. / Obermeier, E. / Stoemenos, J. et al. | 1996
- 129
-
-SiC deposited on SIMOX substrates: characterization of the SiC/SOI system at elevated temperaturesReichert, W. / Lossy, R. / Gonzalez Sirgo, J. M. / Obermeier, E. et al. | 1996
- 133
-
Initial stages of growth of SiC and AlN thin films on vicinal and on-axis surfaces of 6H-SiC (0001)Davis, R. F. / Tanaka, S. / Kern, R. S. / Xu, J. et al. | 1996
- 137
-
High-resistivity epitaxial films of 4H-SiC doped by scandiumMaltsev, A. A. / Litvin, D. P. / Scheglov, M. P. / Nikitina, I. P. et al. | 1996
- 141
-
Electronic properties of 3C-SiC films grown by alternate gas supplyNagasawa, H. / Mitsui, H. / Kawahara, T. / Yagi, K. et al. | 1996
- 145
-
Buried epitaxial layers of 3C-SiC in Si(001) and Si(111) by ion beam synthesis: a structural characterizationLindner, J. K. N. / Volz, K. / Stritzker, B. et al. | 1996
- 145
-
Buried epitaxial layer of 3C-SiC in Si(100) and Si(111) by ion beam synthesis: a structural characterizationLindner, J. K. N. / Volz, K. / Stitzker, B. et al. | 1996
- 149
-
Electrical characterization of SiC/Si-heterostructures formed by rapid thermal carbonization of SiBaumann, U. / Pezoldt, J. / Cimalla, V. / Nennewitz, O. et al. | 1996
- 153
-
The buffer layer in RTCVD of SiCCimalla, V. / Pezoldt, J. / Ecke, G. / Eichhorn, G. et al. | 1996
- 157
-
3C-Si(001)/Si(001) interface formation by carbonization: simulations and experimentsKitabatake, M. et al. | 1996
- 157
-
3C-SiC(001)/Si(001) interface formation by carbonization: simulations and experimentsKitabatake, M. et al. | 1996
- 161
-
Low temperature and large-area deposition of 3C-SiC on Si by AC plasma-assisted CVDShimizu, H. et al. | 1996
- 165
-
CVD growth of 3C-SiC on Si using SiCl~2H~2, C~2H~4 and HClNiemann, E. / Leidich, D. / Boos, A. / Grueninger, H. W. et al. | 1996
- 169
-
Epitaxial growth of 3C-SiC(111) on Si wafer from tetramethylsilane by rapid thermal chemical vapor deposition growth mechanismSeo, Y. H. / Nahm, K. S. / Suh, E.-K. / Lee, H. J. et al. | 1996
- 173
-
Silicon carbide films grown on silicon substrate by chemical vapor depositionVlaskina, S. I. / Kim, Y. S. / Cho, N. I. / Vlaskin, V. I. et al. | 1996
- 173
-
Silicon films grown on silicon substrates by chemical vapor depositionVlaskina, S. I. / Kim, Y. S. / Cho, N. I. / Vlaskin, V. I. et al. | 1996
- 177
-
Theoretical consideration of Si-droplets and graphite inclusions formation during chemical vapor deposition of SiC epitaxial layersKarpov, S. Y. / Makarov, Y. N. / Ramm, M. S. et al. | 1996
- 177
-
Theorethical consideration of Si-droplets and graphite inclusion formation during chemical vapor deposition of SiC epitaxy layersKarpov, S. Y. / Makarov, Y. N. / Ramm, M. S. et al. | 1996
- 181
-
Growth of SiC by CVD from silacyclobutaneSteckl, A. J. / Yuan, C. / Devrajan, J. / Chaudhuri, J. C. et al. | 1996
- 185
-
Improvement of the SiC CVD epitaxial process in a vertical reactor configurationRupp, R. / Lanig, P. / Schoerner, R. / Dohnke, K.-O. et al. | 1996
- 189
-
Comparative investigation of structural, optical and electrical properties of 6H-SiC layers grown by CVD and SSM epitaxial techniquesSyrkin, A. L. / Bluet, J. M. / Dezauzier, C. / Bretagnon, T. et al. | 1996
- 193
-
Study of silicon carbide CVD process by thermogravimetrySone, H. / Kaneko, T. / Miyakawa, N. et al. | 1996
- 197
-
Epitaxial growth of 3C-SiC films on 4-inch diameter (100) silicon wafers by APCVDFleischman, A. J. / Zorman, C. A. / Mehregany, M. / Jacob, C. et al. | 1996
- 201
-
Vapor phase homoepitaxial growth of 6H and 4H silicon carbideBurk, A. A. / Rowland, L. B. / Agarwal, A. K. / Sriram, S. et al. | 1996
- 205
-
Growth of epitaxially oriented silicon carbide on silicon by laser ablation of carbon targets and the structure of the silicon-silicon carbide interfaceRimai, L. / Ager, R. / Hangas, J. / Samman, A. et al. | 1996
- 209
-
Growth of cubic SiC on Si substrate by CVD using hexamethyldisilane and hexachlorodisilaneSano, S. / Nishino, S. / Saraie, J. et al. | 1996
- 209
-
Growth of cubic SiC substrate by CVD using hexamethyldisilane and hexachlorodisilaneSano, S. / Nishino, S. / Saraie, J. et al. | 1996
- 213
-
Chemical vapor deposition of 3C-SiC on Si(100) from methyltrichlorosilane and methyltribromosilaneKunstmann, T. / Veprek, S. / Schmidbaur, H. / Bauer, A. et al. | 1996
- 217
-
Molecular-jet chemical vapour deposition of SiCLubben, D. / Jellison, G.E. / Modine, F.A. et al. | 1996
- 217
-
Molecular-jet chemical vapor deposition of SiCLubben, D. / Jellison, G. E. / Modine, F. A. et al. | 1996
- 221
-
Epitaxial growth of -SiC by tetramethylsilane supersonic free jets: precursor control effectsIkoma, Y. / Watanabe, F. / Motooka, T. et al. | 1996
- 225
-
Heteroepitaxial growth of -SiC thin films on Si(100) substrate using a new source material: bis-trimethylsilylmethaneBahng, W. / Kim, H. J. et al. | 1996
- 225
-
Heteroepitaxial growth of beta-SiC thin films on Si(100) substrate using a new source material: bis-trimethylsilylmethaneWook Bahng / Kim, Hyeong-Joon et al. | 1996
- 229
-
Preparation of polycrystalline SiC thin films by RF magnetron sputtering using multi-targetKobayashi, I. / Yonekubo, S. / Kamimura, K. / Onuma, Y. et al. | 1996
- 233
-
Polycrystalline SiC thin films prepared by microwave plasma chemical vapor depositionYonekubo, S. / Kamimura, K. / Onuma, Y. et al. | 1996
- 237
-
ESR characterization of 3C-SiC films prepared by LPCVD method with alternate gas supplyKawahara, T. / Nagasawa, H. / Yamaguchi, Y. / Hirosawa, E. et al. | 1996
- 241
-
Step bunching in 6H- and 4H-SiC growth by step-controlled epitaxyKimoto, T. / Itoh, A. / Matsunami, H. et al. | 1996
- 245
-
4H-SiC growth by sublimation sandwich-methodMokhov, E. N. / Roenkov, A. D. / Vodakov, Y. A. / Saparin, G. V. et al. | 1996
- 249
-
Effect of surface stoichiometry on nucleation and growth of silicon carbideKonstantinov, A. O. / Hallin, C. / Kordina, O. / Janzen, E. et al. | 1996
- 253
-
Low temperature growth of microcrystalline SiC films by confined plasma CVD methodYasui, K. / Fujita, H. / Ninagawa, N. / Akahane, T. et al. | 1996
- 257
-
Optical properties and characterization of SiC and III-V nitridesChoyke, W. J. / Devaty, R. P. / Clemen, L. L. / MacMillan, M. F. et al. | 1996
- 263
-
Electronic band structure of SiC polytypesLambrecht, W. R. / Limpijumnong, S. / Segall, B. et al. | 1996
- 269
-
Characterization of structural and electrical properties in SiC by Raman spectroscopyNakashima, S. / Harima, H. et al. | 1996
- 275
-
Electrical properties of silicon carbide polytypesPensl, G. / Afanas'ev, V. V. / Bassler, M. / Schadt, M. et al. | 1996
- 281
-
Boron-related defect center in 4H silicon carbideTroffer, T. / Haessler, C. / Pensl, G. / Hoelzlein, K. et al. | 1996
- 281
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Boron-related defect centers in 4H silicon carbideTroffer, T. / Haessler, C. / Pensl, G. / Hoelzlein, K. et al. | 1996
- 285
-
Nitrogen donor levels and conduction band edge structures in 3C, 2H, 4H and 6H SiCSrichaikul, P. / Chen, A. B. et al. | 1996
- 289
-
Capacitance spectroscopy on 6H-SiC pn junctions grown by site-competition epitaxySaddow, S. E. / Tipton, C. W. / Mazzola, M. S. / Neudeck, P. G. et al. | 1996
- 293
-
Electron paramagnetic resonance of deep boron in SiCBaranov, P. G. / Mokhov, E. N. et al. | 1996
- 297
-
Electronic band structure of 15R SiCWellenhofer, G. / Roessler, U. et al. | 1996
- 301
-
Ionicity of SiC polytypesWellenhofer, G. / Karch, K. / Pavone, P. / Roessler, U. et al. | 1996
- 305
-
Nonlocality and many-body effects in the optical spectra of silicon carbideAdolph, B. / Gavrilenko, V. / Tenelsen, K. / Bechstedt, F. et al. | 1996
- 309
-
Electronic structure of SiC/TiC interfacesRashkeev, S. N. / Lambrecht, W. R. L. / Segall, B. et al. | 1996
- 313
-
Electronic properties of semi-insulating vanadium-doped 6H-SiCMitchel, W. C. / Roth, M. D. / Evwaraye, A. O. / Yu, P. W. et al. | 1996
- 317
-
Determination of the conduction band discontinuity in an n-type 3C-SiC/6H-SiC heterojunctionSmith, S. R. / Evwaraye, A. O. / Steckl, A. J. / Yuan, C. et al. | 1996
- 321
-
Optical and magnetic resonance studies of as-grown and electron-irradiated SiC epilayersSon, N. T. / Soerman, E. / Singh, M. / Chen, W. M. et al. | 1996
- 325
-
Electronic states on heterocrystalline structuresBechstedt, F. / Kaeckell, P. et al. | 1996
- 329
-
Deep level study of as-grown and ion implanted bulk and MOCVD grown epitaxial 6H-SiCScofield, J. D. / Yeo, Y. K. / Hengehold, R. L. et al. | 1996
- 333
-
New deep acceptor at E~v + 0.8 eV in 6H silicon carbideKalabukhova, E. N. / Lukin, S. N. / Mokhov, E. N. / Reinke, J. et al. | 1996
- 337
-
First-principles calculations of pressure-dependent properties of SiCKarch, K. / Zywietz, A. / Bechstedt, F. / Pavone, P. et al. | 1996
- 341
-
Photoacoustic studies of SiC polytypesDe Oliveira, A. C. / Freitas, J. A. / Moore, W. J. et al. | 1996
- 345
-
Raman spectroscopy of CVD-grown 4H-SiC epilayersHu, R. / Tin, C. C. / Feng, Z. C. / Liu, J. et al. | 1996
- 349
-
High temperature "boron" electroluminescence in 4H-SiC and deep centersLebedev, A. A. / Poletaev, N. K. et al. | 1996
- 353
-
Mechanism of optical detection of cyclotron resonance in SiCSon, N. T. / Soerman, E. / Chen, W. M. / Bergman, J. P. et al. | 1996
- 357
-
The temperature dependence of the band-edge luminescence form high quality 6H- and 4H-SiCHenry, A. / Bergman, J. P. / Kordina, O. / Hallin, C. et al. | 1996
- 357
-
The temperature dependence of the band-edge luminescence from high quality 6H- and 4H-SiCHenry, A. / Bergman, J. P. / Kordina, O. / Hallin, C. et al. | 1996
- 361
-
Vanadium as a recombination center in 6H SiCMueller, S. G. / Hofmann, D. / Winnacker, A. / Mokhov, E. N. et al. | 1996
- 361
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Vanadium as a recombinant center in 6H SiCMueller, S. G. / Hofmann, D. / Winnacker, A. / Mokhov, E. N. et al. | 1996
- 365
-
Fano-interference effect of Raman scattering in doped SiCHarima, H. / Nakashima, S. et al. | 1996
- 369
-
Some aspects of using IR reflection spectroscopy for diagnostics of SiC structures and related semiconductor materialsGoncharenko, A. V. / Venger, E. F. / Vlaskina, S. I. et al. | 1996
- 373
-
Far-infrared absorption, cyclotron resonance and electron paramagnetic resonance measurements of silicon carbideHarada, Y. / Satoh, K. / Fujii, K. / Nakata, H. et al. | 1996
- 377
-
Room temperature 1.54 m electroluminescence from erbium implanted 6H SiCYoganathan, M. / Choyke, W. J. / Devaty, R. P. / Pensl, G. et al. | 1996
- 377
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Room temperature 1.54 micron electroluminescence from Erbium implanted 6H SiCYoganathan, M. / Choyke, W.J. / Devaty, R.P. / Pensl, G. / Edmond, J.A. et al. | 1996
- 381
-
Ga bound excitons in 3C, 4H and 6H-SiCHenry, A. / Hallin, C. / Ivanov, I. G. / Bergman, J. P. et al. | 1996
- 385
-
Identification of optically and electrically active molybdenum trace impurities in 6H-SiC substratesKunzer, M. / Dombrowski, K. F. / Fuchs, F. / Kaufmann, U. et al. | 1996
- 389
-
Impurities in 4H and 6H SiC crystals, characterized by thermoluminescence and thermally stimulated conductivityStiasny, T. / Helbig, R. et al. | 1996
- 393
-
Characterization of high-quality 4H-SiC epitaxial layersKimoto, T. / Itoh, A. / Matsunami, H. / Sridhara, S. et al. | 1996
- 397
-
Electron scattering mechanisms of -SiCTsukioka, K. et al. | 1996
- 401
-
Effects of vertical strong field electron transport in silicon carbide superlatticeSankin, V. I. et al. | 1996
- 405
-
Hopping conduction effects in the ESR spectra of 6H-SiC heavily doped with nitrogenKalabukhova, E. N. / Kiselev, V. S. / Lukin, S. N. et al. | 1996
- 409
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Structural study of Lely grown 6H-SiCTuominen, M. / Prieur, E. / Yakimova, R. / Glass, R. C. et al. | 1996
- 413
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Influence of impurities and intrinsic defects on physicomechanical properties of silicon carbide single crystalsGarshin, A. P. / Lavrenova, E. A. / Vodacov, Y. A. / Mokhov, E. N. et al. | 1996
- 417
-
Defects of 6H-SiC substrates made by Acheson's method and by modified Lely's methodKato, T. / Ohsato, H. / Razeghi, M. / Okuda, T. et al. | 1996
- 421
-
Atomic structure of the 3C-SiC(001) surface reconstructionsKitabatake, M. et al. | 1996
- 425
-
Etching characterization of a 6H-SiC single crystal grown by the sublimation methodKoga, K. / Kano, T. / Yagi, K. / Yodoshi, K. et al. | 1996
- 429
-
Structural and electrical characterization of single-crystal 4" CVD grown 3C-SiC filmsJacob, C. / Nishino, S. / Pirouz, P. / Zorman, C. A. et al. | 1996
- 433
-
High resolution XRD study of silicon carbide CVD growthBakin, A. S. / Hallin, C. / Kordina, O. / Janzen, E. et al. | 1996
- 437
-
Lattice location of ^1^5N atoms in SiC analyzed by nuclear resonant reactionIto, T. / Konomi, I. / Azuma, H. / Noda, S. et al. | 1996
- 441
-
Investigation of polymorphism and domain distribution in SiC wafers by simple and high resolution x-ray diffractionEllison, A. / Di Persio, J. / Brylinski, C. et al. | 1996
- 445
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X-ray topographic studies of -SiC single crystalline ingots grown by the sublimation methodTakahashi, J. / Ohtani, N. / Kanaya, M. et al. | 1996
- 449
-
Determination of the core nature of partial dislocations in indentation-deformed 3C-SiCNing, X. J. / Pirouz, P. et al. | 1996
- 453
-
Investigation of structural, optical and electrical properties of cubic 3C-SiC deposited on SOICamassel, J. / Dezauzier, C. / DiCioccio, L. / Stoemenos, J. et al. | 1996
- 457
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Positron studies of defects in ion implanted SiCBrauer, G. / Anwand, W. / Pacaud, Y. / Skorupa, W. et al. | 1996
- 461
-
Nitrogen-acceptor pairs in n-type 4H-silicon carbide observed by the perturbed angular correlation spectroscopyLicht, T. / Achtziger, N. / Forkel-Wirth, D. / Reisloehner, U. et al. | 1996
- 465
-
Local vibrational modes associated with impurity-complexes in cubic SiCLin-Chung, P. J. et al. | 1996
- 469
-
Radiation-induced defects in neutron-irradiated 4H- and 6H-SiC single crystalsOkada, M. / Kimura, I. / Nakata, T. / Watanabe, M. et al. | 1996
- 473
-
Two-level model of D-center defects in 6H-SiCMazzola, M. S. / Saddow, S. E. / Tipton, C. W. et al. | 1996
- 477
-
Surface reconstruction of 6H-SiC(001) studied with canning tunneling microscopy and core-level photoelectron spectroscopyOwman, F. / Johansson, L. I. / Maartensson, P. et al. | 1996
- 477
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Surface reconstructions of 6H-SiC(0001) studied with scanning tunneling microscopy and core-level photoelectron spectroscopyOwman, F. / Johansson, L. I. / Maartensson, P. et al. | 1996
- 481
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Spectroscopy of 3C-SiC(001) surface by scanning tunneling microscopyHara, S. / Kitamura, J. / Okushi, H. / Misawa, S. et al. | 1996
- 485
-
Topmost surface analysis of 6H-SiC(0001) by coaxial impact collision ion scattering spectroscopyIshiyama, O. / Shinohara, M. / Nishihara, T. / Ohtani, F. et al. | 1996
- 489
-
Growth orientation dependence of dopant incorporation in bulk SiC single crystalsSugiyama, N. / Okamoto, A. / Tani, T. et al. | 1996
- 493
-
Dependence of the aluminium ionization energy on doping concentration and compensation in 6H-SiCSchoener, A. / Nordell, N. / Rottner, K. / Helbig, R. et al. | 1996
- 497
-
In situ p- and n-type doping of low-temperature grown beta-SiC epitaxial layers on siliconMöller, H. / Krötz, G. / Legner, W. / Wagner, C. / Müller, G. / Smith, L. / Leese, B. / Jones, A. et al. | 1996
- 497
-
In situ p- and n-type doping of low-temperature grown -SiC epitaxial layers on siliconMoeller, H. / Kroetz, G. / Legner, W. / Wagner, C. et al. | 1996
- 501
-
6H-SiC pn structures fabricated by sublimation growth of p+ layer on CVD epitaxial layers of n-type conductivityLebedev, A. A. / Mal'tsev, A. A. / Poletaev, N. K. / Rastegaeva, M. G. et al. | 1996
- 505
-
Organic boron compounds as novel boron sources for p-doping of SiC-epilayers. Incorporation and characterizationStein, R. A. / Rupp, R. / Dohnke, K. O. / Voelkl, J. et al. | 1996
- 509
-
High dose co-implantation of aluminium and nitrogen in 6H-silicon carbideHeera, V. / Pezoldt, J. / Ning, X. J. / Pirouz, P. et al. | 1996
- 513
-
Amorphization and re-crystallization of Al-implanted 6H-SiCKawase, D. / Ohno, T. / Iwasaki, T. / Yatsuo, T. et al. | 1996
- 517
-
Defect centers in ion-implanted 4H silicon carbideDalibor, T. / Peppermueller, C. / Pensl, G. / Sridhara, S. et al. | 1996
- 521
-
Al and N ion implantations in 6H-SiCRao, M. V. / Gardner, J. / Holland, O. W. / Kelner, G. et al. | 1996
- 525
-
Hot implantation of N(+) into alpha-SiC epilayersInoue, N. / Itoh, A. / Kimoto, T. / Matsunami, H. / Nakata, T. / Watanabe, M. et al. | 1996
- 525
-
Hot implantation of N^+ into -SiC epilayersInoue, N. / Itoh, A. / Kimoto, T. / Matsunami, H. et al. | 1996
- 529
-
Activation of donor and acceptor implants in 6H-SiC: a photoluminescence studyFreitas, J. A. / Gardner, J. / Rao, M. V. et al. | 1996
- 533
-
Ion beam induced crystallization of 6H-SiCHeera, V. / Koegler, R. / Skorupa, W. / Stoemenos, J. et al. | 1996
- 537
-
Study of the different stages of damage induced by 200 keV Ge^+ ion implantation in 6H-SiCPacaud, Y. / Brauer, G. / Perez-Rodriquez, A. / Stoemenos, J. et al. | 1996
- 541
-
Ion beam synthesis by high dose tungsten implantation into 6H-silicon carbideWeishart, H. / Matz, W. / Skorupa, W. et al. | 1996
- 545
-
Optical evaluation of 6H-SiC single crystals implanted with B or AlToda, T. / Yagi, K. / Koga, K. / Yodoshi, K. et al. | 1996
- 549
-
Characterization of defects in hot-implanted 3C-SiC epitaxially grown on SiItoh, H. / Aoki, Y. / Ohshima, T. / Yoshikawa, M. et al. | 1996
- 553
-
High temperature implantation of -SiC and its characterizationLossy, R. / Reichert, W. / Obermeier, E. / Stoemenos, J. et al. | 1996
- 553
-
High temperature implantation of beta-SiC and its characterizationLossy, R. / Reichert, W. / Obermeier, E. / Stoemenos, J. et al. | 1996
- 557
-
Ion implantation and recrystallization of silicon carbideGlaser, E. / Heft, A. / Heindl, J. / Kaiser, U. et al. | 1996
- 561
-
Annealing behavior and electrical properties of boron implanted 4H-SiC-layersHoelzlein, K. / Mitlehner, H. / Rupp, R. / Stein, R. et al. | 1996
- 565
-
Argon implanted SiC device edge termination: modelling, analysis and experimental resultsAlok, D. / Baliga, B. J. / Kothandaraman, M. / McLarty, P. K. et al. | 1996
- 569
-
Specific contact resistance as a function of doping for n-type 4H and 6H-SiCCrofton, J. / Luckowski, E. D. / Williams, J. R. / Isaacs-Smith, T. et al. | 1996
- 573
-
Aluminium doped 6H SiC: CVD growth and formation of ohmic contactsNordell, N. / Savage, S. / Schoener, A. et al. | 1996
- 577
-
Nickel and molybdenum ohmic contacts on silicon carbideArnodo, C. / Tyc, S. / Wyczisk, F. / Brylinski, C. et al. | 1996
- 581
-
Nickel-based metallization in processes of the 6H-SiC device fabrication; ohmic contacts, masking and packagingRastegaeva, M. G. / Andreev, A. N. / Zelenin, V. V. / Babanin, A. I. et al. | 1996
- 585
-
Improved ohmic contacts to p-type 6H-SiCSpiess, L. / Nennewitz, O. / Pezoldt, J. et al. | 1996
- 589
-
Thermally stable ohmic contacts on n-type 6H- and 4H-SiC based on silicide and carbideLiu, S. / Reinhardt, K. / Severt, C. / Scofield, J. et al. | 1996
- 593
-
Ti Ohmic contact without post-annealing process to n-type 6H-SiCTeraji, T. / Hara, S. / Okushi, H. / Kajimura, K. et al. | 1996
- 597
-
Low Contact resistivity W ohmic contacts to n-type 6H-SiCBaud, L. / Billon, T. / Lassagne, P. / Jaussaud, C. et al. | 1996
- 601
-
Interface chemistry and electrical properties of annealed Ni and Ni/Al-6H SiC structuresHallin, C. / Yakimova, R. / Krastev, V. / Marinova, T. et al. | 1996
- 605
-
The influence of dry cleaning techniques on thermal oxides grown on 4H and 6H p-type SiCZettterling, C.-M. / Harris, C. I. / Oestling, M. / Afanas'ev, V. V. et al. | 1996
- 609
-
A method of preparation of highly perfect 6H-SiC surfacesDucke, E. / Kriegel, R. / Fissel, A. / Kaiser, U. et al. | 1996
- 613
-
Study of the hydrogen etching of silicon carbide substratesHallin, C. / Bakin, A. S. / Owman, F. / Maartensson, P. et al. | 1996
- 613
-
Study of the hydrogen etching of silicon carbide subtratesHallin, C. / Bakin, A. S. / Owman, F. / Maartensson, P. et al. | 1996
- 617
-
The photoelectrochemical (pec) etching of and silicon carbide (SiC) and its characterizationCollins, D. M. / Harris, G. L. / Zhang, D. / Wongchotigul, K. et al. | 1996
- 621
-
6H-SiC reactive ion etching conditions for the fabrication of semiconductor devicesYih, P. H. / Saxena, V. / Steckl, A. J. et al. | 1996
- 625
-
Reactive ion etching of 6H-SiC using NF~3Casady, J. B. / Luckowski, E. D. / Bozack, M. / Sheridan, D. et al. | 1996
- 629
-
Orientation dependence of thermal oxidation rates in 6H-SiCUeno, K. / Seki, Y. et al. | 1996
- 633
-
Oxidation kinetics of 3C, 4H, and 6H silicon carbideGoelz, A. / Horstmann, G. / Von Kamienski, E. S. / Kurz, H. et al. | 1996
- 637
-
Anisotropy in thermal oxidation of 6H-SiCTokura, N. / Hara, K. / Takeuchi, Y. / Miyajima, T. et al. | 1996
- 641
-
Defects in differently annealed oxides on 4H- and 6H-SiCStein von Kamienski, E. / Portheine, F. / Goelz, A. / Kurz, H. et al. | 1996
- 645
-
High quality oxides of 6H-silicon carbide using rapid thermal chemical vapor depositionSridevan, S. / Misra, V. / McLarty, P. K. / Baliga, B. J. et al. | 1996
- 649
-
Oxidation of polycrystalline SiC filmsKamimura, K. / Kuroda, T. / Ogawa, T. / Nakao, M. et al. | 1996
- 653
-
Recent progress in epitaxial growth of SiC for power device applicationsJanzen, E. / Kordina, O. et al. | 1996
- 659
-
Advances in SiC materials and devices for high frequency applicationsBrandt, C. D. / Agarwal, A. K. / Augustine, G. / Barron, R. R. et al. | 1996
- 665
-
Characterization of Schottky contacts on n type 6H-SiCZhang, Y. G. / Li, X. L. / Li, A. Z. / Milnes, A. G. et al. | 1996
- 669
-
Current transport at low temperature in Al/6H-SiC Schottky barriersReddy, C. V. / Fung, S. / Beling, C. D. / Brauer, G. et al. | 1996
- 673
-
To Schottky barrier formation on metal-wide band gap semiconductor contactDavydov, S. Y. / Tikhonov, S. K. et al. | 1996
- 677
-
CVD of tungsten Schottky diodes to 6H-SiCLundberg, N. / Taegtstroem, P. / Jansson, U. / Oestling, M. et al. | 1996
- 681
-
Ni, Al and Ti Schottky diodes and their electrical characterization on 6H-SiCLang, M. / Isaac-Smith, T. / Tin, C. C. / Williams, J. R. et al. | 1996
- 685
-
Barrier height analysis of metal/4H-SiC Schottky contactsItoh, A. / Takemura, O. / Kimoto, T. / Matsunami, H. et al. | 1996
- 689
-
Low power-loss 4H-SiC Schottky rectifiers with high blocking voltageItoh, A. / Kimoto, T. / Matsunami, H. et al. | 1996
- 693
-
The guard-ring termination for 6H-SiC Schottky barrier diodesUeno, K. / Urushidani, T. / Hashimoto, K. / Seki, Y. et al. | 1996
- 697
-
Fabrication of high voltage SiC Schottky barrier diodes by Ni metallizationSu, J. N. / Steckl, A. J. et al. | 1996
- 697
-
Fabrication of high voltage SiC Schottky barrier diodes by Ni metalizationSu, J. N. / Steckl, A. J. et al. | 1996
- 701
-
The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiCLebedev, A. A. / Strel'chuk, A. M. / Ortolland, S. / Raynaud, C. et al. | 1996
- 701
-
The negative temperature coefficient of the breakdown voltage of SiC p-n structure and deep centers in SiCLebedev, A. A. / Stre'chuk, A. M. / Ortolland, S. / Raynaud, C. et al. | 1996
- 705
-
Avalanche light-emitting diodes based on silicon carbideAvramenko, S. F. / Kalabukhova, E. N. / Kiselev, V. S. et al. | 1996
- 705
-
Avalanche light-emiting diodes based on silicon carbideAvramenko, S. F. / Kalabukhova, E. N. / Kiselev, V. S. et al. | 1996
- 709
-
The effects of atmospheric and HIP annealing on spectral response of 3C-SiC pn photodiodeHirabayashi, Y. / Misawa, S. / Yoshida, S. et al. | 1996
- 709
-
The effect of atmospheric and HIP annealing on spectral response of 3C-SiC pn photodiodeHirabayashi, Y. / Misawa, S. / Yoshida, S. et al. | 1996
- 713
-
Comparison of aluminium- and boron-implanted vertical 6H-SiC p^+n junction diodesRamungul, N. / Khemka, V. / Tyagi, R. / Chow, T. P. et al. | 1996
- 713
-
Comparison of aluminum- and boron-implanted vertical 6H-SiC p^+n junction diodesRamungul, N. / Khemka, V. / Tyagi, R. / Chow, T. P. et al. | 1996
- 717
-
Planar, high voltage, boron implanted 6H-SiC p-n junction diodesShenoy, P. M. / Baliga, B. J. et al. | 1996
- 721
-
OBIC measurements on 6H SiC p^+-n-mesa diodes with floating field ringsRottner, K. / Savage, S. / Andre, J. / Ramberg, L. et al. | 1996
- 725
-
Thermal oxidation of B-doped p-type 6H-SiC and fabrications of MOS diodesAkita, H. / Kimoto, T. / Inoue, N. / Matsunami, H. et al. | 1996
- 725
-
Thermal oxidation of B-doped p-type 6H-SiC and fabrication of MOS diodesAkita, H. / Kimoto, T. / Inoue, N. / Matsunami, H. et al. | 1996
- 729
-
Electrical properties of the SiC/SiO~2 systemBano, E. / Ouisse, T. / Lassagne, P. / Billon, T. et al. | 1996
- 733
-
High temperature dependence of Fowler-Nordheim emission tunneling current in (6H) and (4H) SiC MOS capacitorsBano, E. / Ouisse, T. / Lassagne, P. / Billon, T. et al. | 1996
- 737
-
The stability of 6H-SiC MOS capacitors at high temperatureYamada, N. / Fuma, H. / Tadano, H. et al. | 1996
- 741
-
Effects of gamma-ray irradiation on formation of oxide-trapped charges in SiC MOS capacitorsYoshikawa, M. / Itoh, H. / Ohshima, T. / Nashiyama, I. et al. | 1996
- 745
-
Recent advances in silicon carbide MOS technologyShenoy, J. N. / Das, M. K. / Chindalore, G. L. / Cooper, J. A. et al. | 1996
- 749
-
High voltage (450 V) 6H-SiC substrate gate JFET (SG-JFET)Alok, D. / Baliga, B. J. et al. | 1996
- 753
-
Subthreshold current in silicon carbide buried-gate junction field-effect transistorIvanov, P. A. et al. | 1996
- 757
-
4H-SiC field-effect transistor hetero-epitaxially grown on 6H-SiC substrate by sublimationIvanov, P. A. / Maltsev, A. A. / Panteleev, V. N. / Samsonova, T. P. et al. | 1996
- 761
-
Frequency and power performance of microwave SiC FET'sAllen, S. T. / Palmour, J. W. / Tsvetkov, V. F. / Macko, S. J. et al. | 1996
- 765
-
Wide bandgap semiconductor RF MESFET power densitiesWeitzel, C. E. et al. | 1996
- 769
-
SiC microwave power transistorsSiergiej, R. R. / Sriram, S. / Clarke, R. C. / Agarwal, A. K. et al. | 1996
- 773
-
Design and simulation of 6H-SiC UMOS FET and IGBT for high-temperature power electronics applicationsRamungul, N. / Tyagi, R. / Bhalla, A. / Chow, T. P. et al. | 1996
- 777
-
Low interface state densities in SiC MIS devices using epitaxial AlNHarris, C. I. / Aboelfotoh, M. O. / Kern, R. S. / Tanaka, S. et al. | 1996
- 777
-
Low interface state densities in SiC MIS devices using epitaxial AINHarris, C. I. / Aboelfotoh, M. O. / Kern, R. S. / Tanaka, S. et al. | 1996
- 781
-
Observation of the Meyer and Neldel rule in silicon carbide inversion layersOuisse, T. et al. | 1996
- 785
-
Development of nonvolatile random access memories in 6H-SiCXie, W. / Wang, Y. / Melloch, M. R. / Cooper, J. A. et al. | 1996
- 789
-
Design and fabrication depletion load NMOS integrated circuits in 6H-SiCRyu, S. / Kornegay, K. T. et al. | 1996
- 789
-
Design and Fabrication of depletion load NMOS integrated circuits in 6H-SiCRyu, S. / Kornegay, K. T. et al. | 1996
- 793
-
Static and dynamic properties of 4.5 kV MOSFETs in 4H and 6H SiC - simulation studyGustafsson, U. / Bakowski, M. / Lindefelt, U. et al. | 1996
- 797
-
DC and low frequency noise characterization of 6H-SiC MOSFETs from 25 C to 450 CCasady, J. B. / Dillard, W. C. / Johnson, R. W. / Agarwal, A. K. et al. | 1996
- 801
-
Effects of gamma-ray irradiation and thermal annealing on electrical characteristics of SiC MOSFETsOhshima, T. / Yoshikawa, M. / Itoh, H. / Takahashi, T. et al. | 1996
- 801
-
Effects of gamma-ray irradiation and thermal annealing on electrical characteristic of SiC MOSFETsOhshima, T. / Yoshikawa, M. / Itoh, H. / Takahashi, T. et al. | 1996
- 805
-
NMOS and PMOS high temperature enhancement-mode devices and circuits in 6H-SiCSlater, D. B. / Lipkin, L. A. / Johnson, G. M. / Suvorov, A. V. et al. | 1996
- 809
-
Mechanisms limiting current gain in SiC bipolar junction transistorsWang, Y. / Xie, W. / Cooper, J. A. / Melloch, M. R. et al. | 1996
- 813
-
4H-silicon carbide power switching devicesPalmour, J. W. / Allen, S. T. / Singh, R. / Lipkin, L. A. et al. | 1996
- 817
-
Silicon carbide-based detection of hydrogen and hydrocarbonsHunter, G. W. / Neudeck, P. G. / Chen, L.-Y. / Knight, D. et al. | 1996
- 821
-
Preparation of SiC thin film thermistor by hot wall epitaxyMaramatsu, K. / Sakamoto, T. / Asakura, M. / Hasegawa, K. et al. | 1996
- 825
-
Preparation of polycrystalline SiC thin films and its application to resistive sensorsKamimura, K. / Miwa, T. / Sugiyama, T. / Ogawa, T. et al. | 1996
- 829
-
Micromachining applications of heteroepitaxially grown -SiC layers on siliconKroetz, G. / Wagner, C. / Legner, W. / Sonntag, H. et al. | 1996
- 833
-
Growth of III-V nitrides by ECR-assisted MBE and fabrication of opto-electronic devicesMoustakas, T. D. / Vaudo, R. P. / Singh, R. / Korakakis, D. et al. | 1996
- 839
-
Characterization of GaN grown with a high growth rate by RF-radical source molecular beam epitaxyMori, M. / Kikuchi, A. / Kishino, K. et al. | 1996
- 843
-
Initial stage of cubic GaN film growth on (001)GaAs by MOMBE using MMHy and TEGTakeuchi, A. / Kumagai, Y. / Tsuchiya, H. / Kurihara, M. et al. | 1996
- 843
-
Initial stage of cubic GaN film growth (001)GaAs by MOMBE using MMHy and TEGTakeuchi, A. / Kumagai, Y. / Tsuchiya, H. / Kurihara, M. et al. | 1996
- 847
-
MBE of GaN on 6H-SiC and GaAs substrates using hydrazine as a nitrogen sourceAntinov, V. G. / Nikishin, S. A. / Zubrilov, A. S. / Tsvetkov, D. V. et al. | 1996
- 847
-
MBE and GaN on 6H-SiC and GaAs substrates using hydrazine as a nitrogen sourceAntipov, V. G. / Nikishin, S. A. / Zuvrilov, A. S. / Tsvetkov, D. V. et al. | 1996
- 851
-
Effects of nitrogen source conditions on the properties of GaN/sapphire (0001) grown by ECR-MBE: PL and XRD studyMaruyama, T. / Cho, S. H. / Akimoto, K. et al. | 1996
- 855
-
The growth of p-type epitaxial GaN films on sapphire substrates in a production scale multi-wafer rotating disc MOCVD reactorYuan, C. / Salagaj, T. / Gurary, A. / Kroll, W. et al. | 1996
- 859
-
The selective growth in hydride vapor phase epitaxy of GaNDetchprohm, T. / Kuroda, T. / Hiramatsu, K. / Sawaki, N. et al. | 1996
- 863
-
High-quality GaN grown directly on SiC by halide vapour phase epitaxyMelnik, Y. V. / Nikitina, I. P. / Zubrilov, A. S. / Sitnikova, A. A. et al. | 1996
- 867
-
Epitaxial growth of GaN films on silicon substrates by MOVPEYokouchi, K.-I. / Araki, T. / Nagatomo, T. / Omoto, O. et al. | 1996
- 871
-
Growth of zincblende GaN films by electron cyclotron resonance plasma enhanced chemical vapor depositionYasui, K. / Yoshida, H. / Harada, T. / Akahane, T. et al. | 1996
- 875
-
Crystal orientation of GaN films grown on (001) GaAs substrates by plasma-assisted metalorganic chemical vapor depositionSato, M. et al. | 1996
- 879
-
Nitridation of GaAs(111)B substrates and heteroepitaxial growth of InN on the nitrided substratesYamamoto, A. / Yamauchi, Y. / Ogawa, T. / Ohkubo, M. et al. | 1996
- 883
-
Growth of GaN films by plasma-excited organometallic vapor phase epitaxyWakahara, A. / Tokuda, T. / Sasaki, A. et al. | 1996
- 887
-
GaN-MOVPE: correlation between computer modelling and experimental dataDauelsberg, M. / Kadinski, L. / Makarov, Y. N. / Woelk, E. et al. | 1996
- 891
-
Reflectance study of MOVPE grown GaN using triethylgallium and ammoniaBriot, O. / Gil, B. / Sanchez, S. / Aulombard, R. L. et al. | 1996
- 895
-
MOVPE production reactor technology for multiwafer SiC and GaN growth at very high temperaturesSchmitz, D. / Woelk, E. / Strauch, G. / Beccard, R. et al. | 1996
- 899
-
Mass-spectrometric study of gas reaction of trimethylgallium-monomethylhydrazine in a low-pressure metalorganic chemical vapor deposition apparatus by in-situ gas samplingIshii, M. / Minami, T. / Miyata, T. / Karaki, S. et al. | 1996
- 903
-
LIF detection of excited-neutral N~2 from a nitrogen plasma sourceKajiyama, H. / Kimura, K. / Okumura, H. / Katsumi, R. et al. | 1996
- 907
-
Growth characteristics of GaN films and initial layers prepared by hot wall epitaxyIshida, A. / Yamamoto, E. / Iwata, F. / Fujiyasu, H. et al. | 1996
- 911
-
Preparation of AlN and GaN thin films by reactive ion beam sputtering and optical propertiesYaji, T. / Tsukamoto, H. / Nakagawa, Y. / Ohtani, F. et al. | 1996
- 915
-
Optical properties of wurtzite GaN/AlGaN quantum wellsSuzuki, M. / Uenoyama, T. / Kamiyama, S. et al. | 1996
- 919
-
Infrared reflectance and cathodoluminescence of AlN-GaN short period superlattice filmsMac Millan, M. F. / Clemen, L. L. / Devaty, R. P. / Choyke, W. J. et al. | 1996
- 923
-
Structural and optical characterization of GaN films grown by metalorganic chemical vapor depositionYang, K. / Zhang, R. / Shen, B. / Qin, L. H. et al. | 1996
- 927
-
Relaxation and recombination dynamics of GaN/Al~2O~3 epilayersEckey, L. / Heitz, R. / Hoffmann, A. / Broser, I. et al. | 1996
- 927
-
Relaxation and recombination dynamics in GaN/Al~2O~3 epilayersEckey, L. / Heitz, R. / Hoffmann, A. / Broser, I. et al. | 1996
- 931
-
Exciton dynamics in GaNBergman, J. P. / Monemar, B. / Amano, H. / Akasaki, I. et al. | 1996
- 935
-
Photoluminescence related to two-dimensional electron gas at a GaN/AlGaN heterointerfaceBergman, J. P. / Lundstroem, T. / Monemar, B. / Amano, H. et al. | 1996
- 935
-
Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerfaceBergman, J. P. / Lundstroem, T. / Monemar, B. / Amano, H. et al. | 1996
- 939
-
Bandgap energy of cubic GaNOkumura, H. / Ohta, K. / Ando, K. / Ruehle, W. W. et al. | 1996
- 943
-
Excitonic structure of GaN epitaxial films grown by hydride-vapor-phase epitaxyEckey, L. / Podlowski, L. / Goeldner, A. / Hoffmann, A. et al. | 1996
- 947
-
Electronic structure of Ga~1~-~nIn~xN by the tight-binding method with nearest-neighbor s, p and d and second-neighbor s and p interactionsNakajima, S. / Yang, T. / Sakai, S. et al. | 1996
- 947
-
Electronic structure of Ga~1~-~xIn~xN by the tight-binding method with nearest-neighbor s, p and d and second-neighbor s and p interactionsNakajima, S. / Yang, T. / Sakai, S. et al. | 1996
- 951
-
Optical characterization of the free electron gas in bulk single crystals of GaN by means of Raman scattering and infrared reflectivity: evidence of phonon-plasmon coupled modesPerlin, P. / Knap, W. / Taliercio, T. / Camassel, J. et al. | 1996
- 955
-
Characterization of GaN epitaxial films by Raman microprobeHarima, H. / Nakashima, S. / Sakashita, H. / Yamamoto, E. et al. | 1996