1.3 m Buried-Heterostructure Lasers Using a CH~4 Reactive-Ion-Etched Structure grown by Metalorganic Vapor Phase Epitaxy (English)
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In:
Indium phosphide and related materials
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384-387
;
1996
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ISBN:
- Conference paper / Print
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Title:1.3 m Buried-Heterostructure Lasers Using a CH~4 Reactive-Ion-Etched Structure grown by Metalorganic Vapor Phase Epitaxy
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Contributors:
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Conference:International conference; 8th, Indium phosphide and related materials ; 1996 ; Schwabisch Gmund; Germany
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Published in:Indium phosphide and related materials ; 384-387
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Publisher:
- New search for: IEEE
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Publication date:1996-01-01
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Size:4 pages
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Remarks:Also known as IPRM'96. IEEE cat no 96CH35930
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Metamorphic InGaAs/AlInAs heterostructure field effect transistors: layer growth, device processing and performanceInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 7
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Quantum-wires and -boxes based on GaInAsP/InP and related materials for advanced semiconductor lasersInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 11
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In-P based optoelectronic components for measurements, communications, and computersInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 15
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Subnanometer Scale Characterization of III-V HeterostructuresInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 19
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Anomalous Optical Behaviour of LT-AlInAs Related to Anisotropic Composition ModulationInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 20
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Properties of InGaAs-MSM-Photodetectors on SiInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 23
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Analysis of the Uniformity of the Localised Area Epitaxy by Spectrally Resolved Scanning PhotoluminescenceInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 27
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[100] Interface Anisotropy Using Degree of PolarizationInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 31
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Room Temperature Observation of Lateral Quantization Effects in Modulated Barrier InGaAs/InP WiresInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 35
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High Quality InP Substrates Grown by the VCZ MethodInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 39
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A Comprehensive Model for High Pressure Growth of InP CrystalsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 43
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Reproducibility in the Fabrication of Undoped Semi-Insulating InPInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 47
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Growth of InP Bulk Crystals by VGF: A Comparative Study of Dislocation Density and Numerical Stress AnalysisInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 50
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A Model for Rapid Synthesis of Large Volume InP MeltsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 53
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Fabrication Technologies of InP based digital ICs and MMICsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 57
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InGaAs-Based mm-Wave Integrated Subharmonic Mixer Exhibiting Low Input Power Requirement and Low Noise CharacteristicsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 61
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A 12 Gb/s Laser and Optical Modulator Driver Circuit with InGaAs/InP Double Heterostructure Bipolar TransistorsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 64
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A 3-bit, 8 GSPS Flash ADCInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 68
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Active Circulator MMIC in CPW Technology using Quarter Micron InAlAs/InGaAs/InP HFETsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 72
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W-Band MMIC Amplifiers Based on Quarter Micron Gate-Length InP-HEMTs and Coplanar WaveguidesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 76
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Monolithic Integration of InP HBT and HEMT By Selective Molecular Beam EpitaxyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 79
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Solid Source MBE for Phosphide - Based DevicesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 83
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Low Detect and High Uniformity Solid-Source Molecular Beam Epitaxy of InAlAs/InGaAs/InP Heterostructures for Optical MQW-SPSL DevicesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 86
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Electron Beam Evaporated Carbon Doping of InGaAs Layers Grown by Gas Source Molecular Beam EpitaxyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 89
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Growth of Al~0~.~4~8 In~0~.~5~2As/Ga~0~.~47In~0~.~5~3As heterostructures lattice reaxed on GaAs and lattice matched on InPInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 93
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Fabrication of InGaAs Quantum Wires with Composition-Controlled Barrier Layers by Selective Growth of Molecular Beam EpitaxyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 97
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Influence of Growth Conditions on Mobility and Anisotropy of In~yGa~1~-~yAs/In~0~.~5~2Al~0~.~4~8As/InP HEMT's with y = 0.53 to 0.80Information Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 101
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MBE Growth of Lattice Matched HFETs on InP: Material Quality and ReproducibilityInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 106
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High Reliable InGaAsP Electro-Absorption Modulator for 10 Gb/s OperationInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 106
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The Road to Nanoelectronics: Challenges and Opportunities for InPInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 107
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Ion Damage Propagation in Dry-Etching InP-Based StructuresInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 111
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Investigation of Macroscopic Uniformity During CH~4/H~2 Reactive Ion Etching of InP and Improvement Using a Guard RingInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 115
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Surface- and Sidewall-Damage of InP-based Optoelectronic Devices During Reactive Ion Etching Using CH~4/H~2Information Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 119
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Versatile Reactive Ion Beam Etching (RIBE) of InP-based Materials using CH~4/H~2/Ar ChemistryInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 121
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Successful Utilization of CH~4/H~2RIE for the Fabrication of 1.3 m InGaAsP/InP Integrated Laser with Butt-Coupled Passive WaveguidesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 125
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CH~4/H~2/N~2 Reactive Ion Beam Etching for InP Based Photonic DevicesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 129
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Resonant Tunneling Heterojunction Bipolar Transistors and their Application in High Functionally/Speed Digital CircuitsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 133
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Power Performance of InGaAs/InP Single HBTsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 137
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Novel Approach for InP-Based Ultrafast HBTsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 141
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Growth and Characterization of High-Speed InP/InGaAs Heterojunction Bipolar Transistors Using N^+-InP Contacting LayersInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 145
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100 GHz Transferred-Substrate Schottky-Collector Heterojunction Bipolar TransistorsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 149
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Orientation Effects on Si~3N~4 passivated InP/InGaAs Heterojunction Bipolar TransistorsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 152
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Fabrication of an InP/GaInAsP Based Integrated Gain-Coupled DFB Laser / M-Z Phase Modulator for 10 Gb/sec Fiber Optic TransmissionInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 155
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Direct Modulation of Lasers by Dispersive Threshold SwitchingInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 158
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Wide Temperature 1.55 m InGaAsP SL-MQW DFB Lasers with High ReliabilityInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 162
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Record Tuning Range of a 1.55 m DBR Laser Realized by Selective Area GrowthInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 165
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Monolithic Mode Locked DBR Laser with Multiple-Bandgap MQW Structure Realized by Selective Area GrowthInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 169
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Parasitic-Free Study of Carrier Transport in Asymmetric 1.55 m MQW Laser StructuresInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 173
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Multiwavelength DFB Laser Array Utilizing Combined Effect of Ridge Width and Ridge TiltInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 180
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Modelling and Optimisation of the Static Saturation Characteristics of Quantum Well Semiconductor Optical AmplifiersInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 184
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InGaAs/InGaAs Tensile-Strained-Barrier MQW Structures for Optical AmplifiersInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 188
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Analysis of the Temperature Dependence of 1.3m AlGaInAs/InP Multiple Quantum-Well LasersInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 192
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Integration of a temperature-tunable InP/InAlGaAs/InGaAsP grating-assisted vertical codirectional coupler filter with an InGaAs pin-detectorVanderbauwhede, W. / Moerman, I. / Van Daele, P. / Demeester, P. et al. | 1996
- 195
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MOVPE Growth of High Performance Photodetector Structures using TBA and TBPInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 199
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Low Dark Current InAlAs/InGaAs Metal-Semiconductor-Metal PhotodetectorsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 203
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High-Bandwidth 1.55 m Waveguide Integrated PhotodetectorInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 211
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Frequency Response of InP/GaAs MSM Photo-detector with Current Transport along 2DEGInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 215
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Simple Realization of a Monolithic Integrated Photoreceiver for 10GBIT/S using an InP/InGaAs HeterostructureInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 219
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InAlGaAs-InGaAs-InP RCE PIN Photodiode for 1300 nm Wavelength RegionInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 223
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Waveguide-integrated InP/InGaAs/InAlGaAs MSM PhotodetectorsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 226
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Inverted, Substrate-Removed MSM and Schottky Diode Optical DetectorsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 230
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Polarization Insensitive Interferometric Wavelength Converter with Tensile Strained InGaAs/InGaAsP MQW StructureInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 234
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Proposal of New Narrow-Band Wavelength Filter Using Grating-Assisted Vertical Contra-Directional CouplerInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 238
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Polarisation Insensitive Electroabsorption Modulator with Record Power Saturation Using Strained InGaAsP/InGaAsP/InAsP MQW StructureInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 240
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MBE-Grown Al~xIn~1~-~xAs/ Ga~yIn~1~-~yAs/ InP-Electroabsorption Modulators with Enhanced Stark-EffectInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 244
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Ultrashort Passive TE-/TM-Converter Based on InPInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 248
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Wannier-Stark Effect in Ga~xIn~1~-~zAs~zP~1~-~z/ Ga~yIn~1~-~y As~zP~1~-~z Superlattices on InPInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 252
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Direct Writing of Gratings in GaInAs/GaInAsP Quantum Wells Using Pulsed Laser IrradiationInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 256
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Butt Coupling Process for InP Based Photonic Integrated CircuitsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 259
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GaInAs/AlInAs-HEMTs Grown on Optical Waveguide Layers for Photonic Integrated CircuitsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 263
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Flip-Chip-Mounted pin-Photodiode Array for 2.5 Gbit/s-per-Channel Parallel Optical InterconnectsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 267
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Uniformity of 1.3 m Laser Diodes with Butt-Jointed Selectivity Grown Spot-Size Converter Fabricated on 2-inch InP SubstratesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 271
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Carrier Transport in a InGaAs(P)/InP All-Optical Switching StructureInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 275
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Micromachined Structures for Vertical Microelectrooptical Devices on InPInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 279
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Proton Damage on InGaAs Solar Cells Having a 3m InP Window LayerInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 283
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New Three-Layer Antireflection/Surface Passivating Coating for High Efficiency III-V Compound Solar CellsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 287
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Monolithically Integrated Non-linear Interferometers for All-Optical SwitchingInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 290
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Growth of InP Single Crystals by Liquid Encapsulated Czochralski (LEC) Using Glassy-Carbon CruciblesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 291
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InP Synthesis by the Synthesis, Solute Diffusion (SSD) Method Using Glassy-Carbon CruciblesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 292
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Semi-Insulating Behaviour of N-Type Lightly Fe-doped InP Wafers after Thermal AnnealingInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 296
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Picosecond Lifetimes and Exciton Quenching Induced by Metallic Precipitation in InP:CuInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 300
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On the Origin of the Semi-Insulating Behaviour of Low-Temperature In~0~.~5~2Al~0~.~4~8As Grown by Molecular Beam EpitaxyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 304
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10^1^6 cm^-^3 Electrically Active and Thermally Stable Deep Rh Acceptors in InPInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 308
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Influence of SiN~x Passivation on the Surface Potential of GaInAs and AlInAs in HEMT Layer StructuresInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 312
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ECR CVD of Silicon Oxynitride Films for Antireflection Coating of 10 Gbit/s 1.56 m Multi-Quantum Well InP/InGaAsP Mach-Zehnder ModulatorsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 315
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Realisation of Si-based Dielectrics Anti Resonant Reflecting Optical Waveguide (ARROW) on InP by Photochemical DepositionInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 319
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Passivation of GaInAs Surfaces with an Integrated Process Including an Ammonia DECR PlasmaInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 323
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Surface Passivation of InP-Based InGaAs Quantum Wires using Silicon Interlayer-Based Passivation TechniqueInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 327
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Gain Coupled Distributed Feedback Lasers Made by Focused Ion Beam Implantation: Process Parameters and Device PropertiesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 331
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Implant Isolation for Lattice Matched InGaAs/InAlAs/InP Modulation Doped Field Effect Transistor RealisationInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 334
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Polymer Diffusants in III-V Semiconductor Compounds TechnologyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 338
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Fabrication of High-Performance InP MESFETs with in-situ Pulse-Plated Metal GatesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 342
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The Role of Ru in Improving Au-Be Ohmic Contacts to P-Type InPInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 346
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Shallow Si/Pd-based Ohmic Contacts to n type Al~0~.~5In~0~.~5P and Ga~0~.~5In~0~.~5PInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 350
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Pd/Zn/Pd Ohmic Contact to p-InPInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 354
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Pd/Pt/Au and AuGe/Ni/Pt/Au Ohmic Contacts for AlSb/InAs HEMTsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 358
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A Novel Technique to Achieve Strong Colliding-Pulse Effect in CPM QW LDInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 360
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Fabrication of Monolithic Integration of 1.55 m QW Laser and HBTInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 364
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Low-Frequency Noise in Lattice-matched In~0~.~5~2Al~0~.~4~8As/In~0~.~5~3Ga~0~.~4~7As/InP HEMTsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 368
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Origin of 1/f Noise in InAlAs/InGaAs HEMTsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 372
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Low Noise Performance of Dry Etched InGaAs/InAlAs HEMTs in Comparison with Wet Recessed DevicesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 376
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1.3 m Laser Diodes with Spot-Size Converter for Access NetworksInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 380
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Modulation Characteristics of a DFB Laser with Integrated Spot-Size Converter for Efficient Laser Fibre CouplingInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 384
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1.3 m Buried-Heterostructure Lasers Using a CH~4 Reactive-Ion-Etched Structure grown by Metalorganic Vapor Phase EpitaxyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 388
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1mA-Threshold Operation of 1.3 m Tensile-Strained GaInAsP/InP MQW LasersInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 392
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Selective Area Growth with MOVPEInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 396
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MOCVD Regrowth of InP on RIE Patterned Substrates for P-Substrate 1.3 m BH Laser ApplicationInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 400
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Interface Roughness of InGaAs/InAlAs and the Effects of Roughness on Resonant Tunneling CharacteristicsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 404
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Influence of MOVPE Growth Conditions and Substrate Parameters on the Structural Quality of Multi-period InGaAsP/InP MQW StructuresInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 408
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Hydrogen Radical Processing - in-situ semiconductor surface cleaning for epitaxial regrowthInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 412
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In-situ Surface Preparation of InP-based Semiconductors Prior to Direct UVCVD Silicon Nitride Deposition for Passivation PurposesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 416
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Investigation of Surface Oxide Films on InP Mesa Sidewalls and Flat Surfaces Reactive Ion Etched Using CH~4/H~2 ChemistryInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 420
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Material system using HBr gas and a 172nm Excimer LampInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 427
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InP Electronic Preamplifiers in Photoreceiver ApplicationInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 431
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Large Scale PIC's in III-V's - Unique Problems and OpportunitiesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 435
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10 Gbit/s Long Wavelength Monolithic Integrated Optoelectronic Receiver Grown on GaAsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 439
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A 20-Gbit/s Monolithic Photoreceiver Using InAlAs/InGaAs HEMTs and Regrown p-i-n PhotodiodeInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 443
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High Speed, Monolithically integrated pin-HEMT Photoreceiver Fabricated on InP with a Tunable Bandwidth up to 22 Ghz using a Novel Circuit DesignInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 447
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Polarization-Insensitive High-Speed InP/InGaAsP Access Node Space Switch Matrix for Bidirectional Optical ATM NetworksInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 450
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Organic Light Emitting DiodesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 454
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Growth and Application of Group III - Antimonides by MOVPEInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 458
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Traps and the Kink Effect in AlSb/InAs HEMTsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 462
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On the Advantages of InAlAs/InGaAs/InP Dual-Gate-HFET's in Comparison to Conventional Single-Gate-HFET'sInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 466
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Improved Microwave Performance of InP Based HEMT Using a Floating Gate Tetrode ArrangementInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 470
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Reduction of the Output Conductance in InAlAs/InGaAs HEMTs with 0.15 m GatesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 474
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Properties of (GaIn) As and InP Bulk Epitaxial Layers, (GaIn) As/InP-Heterostructures and pin-Detector Device Structures Grown by Using the Alternative Sources Ditertiarybutyl-Arsine and Ditertiarybutyl-PhosphineInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 478
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LP-MOVPE Growth of InGaAsP/InP Using Nitrogen as Carrier GasInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 482
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Optimization of Growth Conditions for the OMVPE grown InAsP/InP Quantum wellInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 486
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Realization of Ga~xIn~1~-~xAs~zP~1~-~z/Ga~yIn~1~-~y As~zP~1~-~z Superlattices with abrupt Interfaces for Optoelectronics at lambda = 1.55 mInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 490
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Enhanced Luminescence of Near-Surface Quantum Wells Passivated in situ by InPInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 494
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Dark Current Reduction for 2.5 m Wavelength, 2% Mismatched InGaAs Photodetectors, by Changing Bufferlayer Structure and Growth TemperatureInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 496
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AFM Study of Surface Topography of InP Epilayers: Effect of Miscut Angle and Growth Temperature During MOVPEInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 500
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Defect Suppression from the Compound Semiconductor HeterointerfacesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 504
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Studies on Gas-Switching Sequences Influence on the Quality of MOVPE InGaAs/InP Superlattice StructuresInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 507
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MOVPE Growth of GaAs and InP based Compounds in Production Reactors using TBAs and TBPInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 511
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Composition Variation of InGaAsP Grown on (111) B Faceted V-groove inP Subtrates by Gas Sources Molecular Beam EpitaxyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 515
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Growth of Ternary and Quaternary Compounds on Non-Planar InP SubstratesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 517
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Improved Structural and Optical Properties of InGaAsP Grown on InP by Ecr Plasma-Assisted EpitaxyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 521
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Growth Temperature Dependence of Composition in InGaP Alloy System Grown by GSMBE Using TertiarybutylphosphineInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 525
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Device Quality InAlAs/InGaAs/InP Heterostructures Grown by Gas Source Molecular Beam EpitaxyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 529
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Single Run Etching and Regrowth of InP/GaInAsP by GSMBEInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 533
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An Unified GSMBE Growth Model for InGaAsP on InP and GaAsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 537
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Effect of Kinetics on the Nucleation of Thin InAs Films on InP by Chemical Beam EpitaxyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 541
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Design and CBE Growth of Strain-Balanced InAsP/GaInP Short-Period Superlattice for Long-Wavelength MQBInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 545
-
Chemical Beam Epitaxy of Pseudomorphic InGaAs/InP Bidimensional Electron GasInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 549
-
High Quality InGaAsP/InP Multiple Quantum Wells Modulator Structures for 1.3 and 1.55 m ApplicationInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 553
-
Highly Resistive GaInP: Fe/GaAs for Selective Embedment of GaAs Based HeterostructuresInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 556
-
Single-Step Growth Of InP/InGaAsP Buried Stripe MQW Lasers On Structured InP SubstrateInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 560
-
Mender Type LPE - New Approach to Growth InP and GaInAsP LayersInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 564
-
Investigations on the Influence of Peltier Effect and Electromigration during Growth of InP, InGaP and InAsP by Liquid Phase Electro-EpitaxyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 565
-
Strain-Compensated MBE grown AlGaInAs/ AlGaInAs/InP QWs for Photonic DevicesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 569
-
Investigations of the Faraday Effect in FE-Doped InPInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 572
-
Carrier Lifetime in Carbon Doped In0.53 Ga0.47 AsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 576
-
Photoreflectance Characterization of Graded Emitter InAlGaAs/InGaAs HBTsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 578
-
Use of Reflectance Spectroscopy for in-situ Monitoring of InP/InGaAsP Films Grown by MOVPEInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 582
-
Photoreflectance Study of Surface Fermi Level of InAlAs after SulfidationInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 586
-
On the Temperature Dependence of InP(001) Bulk and Surface Dielectric FunctionInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 590
-
Real-Time Monitoring of P-based Semiconductor Growth by Linear-Optical SpectroscopyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 594
-
The Refractive Index of InP and its Temperature Dependence in the Wavelength Range from 1.2 m to 1.6 mInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 598
-
Raman and Electrical Characterization of n-InP implanted by 630-keV NitrogenInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 602
-
Raman Scattering Analysis of InGaAs/InP: Effect of Rare Earth (Dysprosium) Addition During Liquid Phase Epitaxial GrowthInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 606
-
As Desorption from InGaAs Monolayer during PH3-Purge in the OMVPE growth of InP/InGaAs (1ML)/InP heterostructures measured by X-ray CTR scatteringInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 610
-
Study of Defect Structures in MLEK Grown InP Single Crystals by Synchrotron White Beam X-Ray TopographyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 614
-
Dependence of Critical Thickness of Strained InAs Layer on Growth RateInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 618
-
Scanning Tunneling Microscopy of Surface Structures of InAs Layers on GaAs (001) SubstratesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 622
-
Observation of Quantum Confined Stark Effect in Wider Quantum Wells by a Novel Photocurrent-Difference SpectroscopyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 625
-
Trap States and their Effect on the Bias-Voltage Dependence of PL Intensity in InP MIS DiodesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 628
-
Temperature Dependence of Electron and Holer Ionization Coefficients in InPInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 632
-
Electrolyte for EC-V Profiling of InP+GaAsBased StructuresInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 636
-
Investigations on Low-Temperature MOVPE Growth of InGaAs/InP using Alternative Sources (TBAs, TBP)Information Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 638
-
Large-Signal HEMT Modelling, Specifically Optimized for InP Based HEMTsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 642
-
Development of a Low-Impedance Traveling Wave Amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s Optoelectronic ReceiversInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 646
-
Influence of Parasitic Capacitances on the Performance of Passivated InAlAs/InGaAs HEMTs in the Millimeter Wave RangeInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 650
-
The Characterization of a new Gate Leakage Mechanism at High Drain Bias in InAlAs/ InGaAs Heterostructure Field-Effect TransistorsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 654
-
On the Temperature Dependence of the Impact Ionization in HFET and the Corresponding RF-and Noise PerformanceInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 658
-
Correlation Between Trap Characterization by Drain Conductance Dispersion and Current Transient Spectroscopy in InAlAs/InP HFETInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 662
-
Degradation Effects and Stabilization of InAlAs/InGaAs-HFETsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 666
-
0.2 M T-Gate InP/InGaAs/InP pHEMT with a InGaP Diffusion Barrier Layer Grown by LP-MOCVD Using a N~2-CarrierInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 670
-
A Study of Trap Related Drain Lag Effects InP HFETsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 674
-
Dependence of Sidegating Effect in InAlAs/InGaAs HEMTs Upon Impact IonizationInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 678
-
AlInAs/GaInAs HEMT with AlInP Barrier LayerInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 681
-
Electroluminescence Measurement of InAlAs/ InGaAs HEMT'S Lattice-Matched to InP SubstratesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 685
-
Characterization of InP Schottky Junctions Formed by In-Situ Remote Plasma ProcessInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 689
-
Transport and Schottky Properties of GaInP Capped GaInAs/InP Quantum Wells with Extremely High Electron MobilitiesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 693
-
InP-Based Misfets Using CdS PassivationInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 697
-
A 1-10GHz Interface Engineered SiNx/InP/GaAs HIGFET TechnologyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 701
-
A Double InGaAs/InP HBT Technology for Lightwave Communication Circuits DesignInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 705
-
Use of Halide Transport in Epitaxial Growth of InP and Related CompoundsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 706
-
Modeling of Be Diffusion in InGaAs Epitaxial Layers Using Two Approaches: Boltzmann-Matano Technique and Point Defect NonequilibriumInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 710
-
Deep Level Observation in InP by Temperature Dependence of the Van De Pauwis Symmetry FactorInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 711
-
Magnetoresistance Measurements of Different Geometries on Epitaxial InP and GaInAs/InP LayersInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 715
-
Vertical Cavity Surface Emitting Lasers based on InP and Related Compounds -Bottleneck and CorkscrewInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 719
-
Room-Temperature Performance of Double-Fused 1.54 m Vertical-Cavity LasersInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 723
-
Thermal Behaviour of 1.3 m Vertical Cavity Surface Emitting LaserInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 727
-
InAs/GaAs Quantum Dot LaserInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 731
-
Temperature Dependences of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers Fabricated by EB-Lithography and 2-Step OMVPE GrowthInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 735
-
High Characteristic Temperature of Strain-Compensated 1.3 m InAsP/InGaP/InP Multi-Quantum Well Lasers Growth by all Solid Source Molecular Beam EpitaxyInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 738
-
Growth, Characterization, Theory and Lasing of Vertically Stacked Quantum DotsInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 742
-
Raman and X-Ray Characterization of III-V InterfacesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 746
-
In-Situ Grown Dots of InP on GaAs and on GaInP - a ComparisonInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 750
-
Fabrication and Optical Properties of Self-assembled InGaAs Quantum Dots Embedded in MicrocavitiesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 753
-
Formation of Self-Organized Quantum Dot Structures and Quasi-Perfect CuPt-Type Ordering by Gas-Source MBE Growth of (GaP)n(InP)n SuperlatticesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 757
-
InP/InAlAs/InGaAs-Quantum WiresInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 761
-
Strained MQW-BH-LDs and Integrated Devices Fabricated by Selective MOVPEInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 765
-
High Performance Buried Heterostructure lambda =1.5 m InGaAs/AlGaInAs Strained-Layer Quantum Well Laser DiodesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 769
-
1.5 m MQW-DFB Q-Switch two Section Laser for High Frequency - Short Pulse GenerationInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 773
-
Strained 1.55 m GaInAsP/GaInAsP SCH MQW Laser Grown by CBEInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996
- 777
-
High-Speed Complex-Coupled Strain-Compensated AlGaInAs/InP 1.5 m DFB Laser DiodesInformation Technology Society within VDE / IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society et al. | 1996