Analytical Modeling of Thermal Effects on Prolate Ellipsoid Field Emission Microemitter (English)
- New search for: Zhao, H.
- New search for: Wang, B.
- New search for: Wang, C.
- New search for: Sin, J. K. O.
- New search for: Russian Academy of Sciences
- New search for: Institute of Radio Engineering and Electronics; Moscow
- New search for: IEEE; Electron Devices Society
- New search for: Zhao, H.
- New search for: Wang, B.
- New search for: Wang, C.
- New search for: Sin, J. K. O.
- New search for: Russian Academy of Sciences
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In:
IVMC'96
;
117-120
;
1996
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ISBN:
- Conference paper / Print
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Title:Analytical Modeling of Thermal Effects on Prolate Ellipsoid Field Emission Microemitter
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Contributors:Zhao, H. ( author ) / Wang, B. ( author ) / Wang, C. ( author ) / Sin, J. K. O. ( author ) / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society
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Conference:International vacuum microelectronics conference; 9th, IVMC'96 ; 1996 ; Saint-Petersburg; Russia
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Published in:IVMC'96 ; 117-120
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Publisher:
- New search for: IEEE
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Publication date:1996-01-01
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Size:4 pages
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Vacuum Microelectronics 1996: Where We Are and Where We are GoingGray, H. F. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 4
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Trends and developments of Vacuum Microelectronics in EuropeBaptist, R. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 5
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Carbon Nanotubes Structures - a New Material of Vacuum MicroelectronicsGulyaev, Y. V. / Chernozatonskii, L. A. / Kozakovskaya, Z. Y. / Musatov, A. L. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 10
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Breakdown in Conventional and Vacuum Microelectronics Field Emission DevicesCharbonnier, F. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 19
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Microtips and Resistive Sheet: A Theoretical Description Of The Emissive Properties Of This SystemBaptist, R. / Bachelet, F. / Constancias, C. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 24
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Surface Diffusion and Phase Transitions in Electropositive OverlayersNaunovets, A. G. / Paliy, M. V. / Vedula, Y. S. / Loburets, A. T. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 29
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Theoretical approach of the photo field emission from a degenerate semiconductorChbihi, A. / Dupont, M. / Gardes, J. / Jaber, Z. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 34
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Miniaturized liquid gallium field emission electron sources for vacuum microelectronicsIshikawa, J. / Gotoh, Y. / Fujita, N. / Nishikawa, S. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 34
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Miniatuarized liquid gallium field emission electron sources for vacuum microelectronicsIshikawa, J. / Gotoh, Y. / Fujita, N. / Nishikawa, S. / Tsuji, H. et al. | 1996
- 39
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Diffusion stability of ultra-sharp field emittersDjuzhev, N. A. / Eremchenko, D. V. / Fedirko, V. A. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 42
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Sensitivity of the Dynamic Work Function Shift and Emission Current on Device Parameters in a New Cold Cathode DesignMumford, P. D. / Cahay, M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 47
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Study of field desorption and adatom diffussion by means of direct field desorption ion imagingBernatskii, D. P. / Parlor, V. G. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 51
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Computer Animation of Electron Motion in Nano-Meter Scale DevicesDe Raedt, H. / Michielsen, K. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 58
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The Electron Energy Distribution From Very Sharp Field EmittersForbes, R. G. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 62
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A SPICE Simulation Model for Field Emission TriodeLu, C. W. / Lee, C. L. / Huang, J. M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 67
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Quasi-Ballistic Transport of Non-Equilibrium Electrons in Diamond Thin FilmsLerner, P. / Cutler, P. H. / Miskovsky, N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 72
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Proposal for a New UV-Light Generating Device Based on Cold Electron EmissionNicolaescu, D. / Filip, V. M. / Okuyama, F. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 77
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Energy Spectrum of Field EmissionRodnevich, B. B. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 81
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Numerical Modelling of Microvacuum Magnetosensitive CellFedirko, V. A. / Belova, N. G. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 86
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A Circuit Model for A Vertical Vacuum Microelectronic Triode at High FrequencyQin, M. / Huang, Q.-A. / Wei, T.-L. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 91
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Velocity distribution effect in microwave vacuum microelectronics devicesBessudnova, N. O. / Rozhnev, A. G. / Trubetskov, D. I. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 94
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Simulation of field emission and electrodynamic characteristics for triode near-cathode modulators with edge Field emitter arraysZakharchenko, Y. F. / Sinitsyn, N. I. / Gulyaev, Y. V. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 97
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Modeling of Tunneling Current at Field Emission Display Tips: For Non-Metallic Tips and an Analytic Method of Solving for Electric FieldsLee, B. / Min, S.-W. / Bang, J.-H. / Hwang, D.-S. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 102
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Theoretical Modelling of the Homogeneous Field Emission AreaGolobentsev, A. F. / Anikin, V. M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 107
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Emission of Hot Electrons out of SemiconductorsBass, F. G. / Yeremka, V. D. / Kulagin, O. P. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 112
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Image Charge Method for Electrostatic Calculations in Field Emission DiodesSaenz, J. J. / Mesa, G. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 117
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Analytical Modeling of Thermal Effects on Prolate Ellipsoid Field Emission MicroemitterZhao, H. / Wang, B. / Wang, C. / Sin, J. K. O. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 121
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Simulation of Disk-edge Field Emitter Using FDM in Non-Orthogonal Curvilinear Coordinate SystemWang, C. / Wang, B. / Zhao, H. / Sin, J. K. O. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 126
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An Innovative Approach to Investigate Micro Tip Apexes Made of Complex Materials Utilizing Imaging-PlatesNishikawa, O. / Fukui, K. / Sekine, T. / Yamamoto, M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 129
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Stability of field electron emission of W, Mo and Re vacuum deposits depending on substrate temperatureChubun, N. N. / Golubev, O. L. / Djubua, B. C. / Shrednik, V. N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 133
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Effects of Vacuum Conditions on Low Frequency Noise in Silicon Field Emission DevicesTrujillo, J. T. / Chakhovskoi, A. G. / Hunt, C. E. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 138
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Modulation Of The Current In A Field Emitter Caused By A CW Or Pulsed Laser-Simulations and Experimental ResultsHagmann, M. J. / Brugat, M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 143
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Pressure Dependency of Emission Currents of Si, Mo, Au and SiC Field EmittersBusta, H. / Gammie, G. / Skala, S. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 148
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Phenomenon of Intrinsic Breakdown in the Field Emission p-type SemiconductorsIvanov, V. G. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 149
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Role of Surface States in Field Emission from SiHuang, Q.-A. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 155
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Advantages of N-Type Heavily Doped Si as an EmitterHuang, Q.-A. / Qin, M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 158
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Degradation of Metal-Insulator-Metal Emitter Characteristics under Pulsed Bias ConditionsKramor, S. S. / Troyan, P. E. / Khaskelberg, M. B. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 162
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Methods for Increasing Emission Current Density and Improving Emission Uniformity of Formed MIM Emitter ArraysTroyan, P. E. / Gaponenko, V. M. / Ghyngazov, S. A. / Kramor, S. S. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 166
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On The Mechanism of Stabilization of Low-Field Electron Emission From Dielectric Films on MetalsDadykin, A. A. / Naumovets, A. G. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 170
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Field emission properties of Si layers deposited on W tipChubun, N. N. / Golubev, O. L. / Djubua, B. C. / Shrednik, V. N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 174
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Experimental Method Of The Estimation Of The Evaporating Fields For The MicroprotrusionsGolubev, O. L. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 179
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Electron emission and electroluminescence from nanodispersed thin filmsFedorovich, R. D. / Naumovets, A. G. / Tomchuk, P. M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 184
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Studies of RF Sputtered CrSiOx Cermet and SiC as Series Resistor Films in FED DisplaysNowicki, R. S. / Busta, H. H. / Pogemiller, J. E. / Forouhi, A. R. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 188
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Electrical Characteristics of Metal Silicide Field EmittersEung Joon Chi / Jae Yeob Shim / Hong Koo Baik / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 192
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Intercalation of a 2-Dimensional Graphite Film on Iridium and Rhenium by Ag AtomsGall, N. R. / Rut'kov, E. V. / Tontegode, A. Y. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 193
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Fabrication and Field Emission study of Gated DLC-coated silicon tipsKo, C.-G. / Lee, S. / Jeon, D.-R. / Yun Hi Lee / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 197
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Luminescent Properties of Sol-Gel Prepared Y3Al5O12:Tb Thin FilmsLo, J.-R. / Tseng, T.-Y. / Tyan, J.-H. / Huang, J. C. M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 202
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Formation of thin silicide films on Ta and Nb surfacesAfanas'eva, E.Yu. / Solov'ev, S.M. et al. | 1996
- 206
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Work function estimate for electrons emitted from nanotube carbon claster filmsGulyaev, Y. V. / Sinitsyn, N. I. / Torgashov, G. V. / Meviyut, S. T. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 211
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Enhanced Field Emission From Polysilicon Emitters Using Porous SiliconPullen, S. E. / Huang, M. / Boswell, E. C. / Huq, S. E. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 215
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The Influence of Substrate on the Potential Barrier Formation for the Electrons Tunneling From a Thin Semiconductor FilmsIl'chenko, L. G. / Il'chenko, V. V. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 217
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Field Emission from Aluminium Nitride and Cubic Boron Nitride CoatingsWojak, G. J. / Choi, W. B. / Myers, A. F. / Cuomo, J. J. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 221
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Field Emission Properties of Mo-Coated Si Field Emitter Array and Formation of Molybdenum SilicideJu, B.-K. / Park, H.-W. / Yun Hi Lee / Chung, I.-J. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 226
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Fabrication and Characterization of DLC-Coated Field Emission ArrayKo, C.-G. / Ju, B.-K. / Yan Hi Lee / Park, J.-H. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 231
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Emission Stability of DLC coated Metal-tips FEAJung, J.-H. / Ju, B.-K. / Yun Hi Lee / Park, K. C. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 235
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Effect of Au Buffer on the Field Emission Characteristics of Chemical Vapor Deposited Diamond FilmsLee, J. S. / Liu, K. S. / Chuang, F. Y. / Sun, C. Y. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 240
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Hafnium Carbide Films and Film-Coated Field Emission CathodesMackie, W. A. / Xie, T. / Blackwood, J. E. / Williams, S. C. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 245
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Surface Application of Chromium Silicide for Improved Stability of Field Emitter ArraysChung, I.-J. / Hariz, A. / Haskard, M. R. / Ju, B.-K. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 250
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Initial Stages of Eu and Yb Silicides Films Growth on Si(111) SurfacesKrachino, T. V. / Kuz'min, M. V. / Loginov, M. V. / Mittsev, M. A. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 252
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Spin-polarized photoelectron sources and spin-dependent free-electron injection through ultrathin ferromagnetic layersDrouhin, H.-J. / Van der Sluijs, A. J. / Lassailly, Y. / Filipe, A. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 258
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Uniform Field Emission from Polycrystalline CVD-Diamond FilmsHabermann, T. / Goehl, A. / Mueller, G. / Pupeter, N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 263
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Field Emission of Nitrogen Doped DLC Films Deposited by PECVDPark, K. C. / Jong Hyun Moon / Jea Gak Kim / Suk Jae Chung / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 268
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Relationship Between Field Emission Characteristics and Hydrogen Content in DLC Deposited by Layer-by-Layer Technique Using PECVDPark, K. C. / Jong Hyun Moon / Suk Jae Chung / Myung Hwan Oh / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 273
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Physical Characterization of Diamond Pyramidal Microtip EmittersKang, W. P. / Davidson, J. L. / George, M. / Wittig, J. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 278
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Emission Characterization of Diamond Coated Si FEAsZhirnov, V. V. / Givargizov, E. I. / Kandidov, A. V. / Seleznev, B. V. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 283
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Fabrication of Self-Aligned Silicon Field Emitters Coated with Diamond-Like-CarbonLee, S. / Jeon, D. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 288
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The effects of the interface and surface treatment on the electron emission from diamond coated field emittersChoi, W. B. / Myers, A. F. / Wojak, G. J. / McClure, M. T. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 293
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Field Emission Characteristics of Amorphous Carbon and Diamond EmittersJae Yeob Shim / Eung Joon Chi / Hong Koo Baik / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 298
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Field Emission Properties of Ta-C Films with Nitrogen DopingPark, K. C. / Jong Hyun Moon / Suk Jae Chung / Jae Hoon Jung / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 303
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Fabrication of FED Prototype Based on Si FEAs With Diamond CoatingGivargizov, E. I. / Chubun, N. N. / Zhirnov, V. V. / Stepanova, A. N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 303
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Fabricaton of FED prototype based on Si FEAs with diamond coatingGivargizov, E.I. / Zhirnov, V.V. / Chubun, N.N. / Stepanova, A.N. et al. | 1996
- 308
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Diamond Cold Cathodes for Electron GunsGivargizov, E. I. / Zhirnov, V. V. / Chubun, N. N. / Mescheryakova, A. L. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 313
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Fabrication of Patterned Diamond Field Emitter Tips Using Silicon Oxide BarrierCho, H. / Chung, B. / Ko, T. / Jeon, D. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 316
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Source of Carbon Atoms Containing no Carbon ClustersGall, N. R. / Rut'kov, E. V. / Tontegode, A. Y. / Kuznetsov, P. B. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 320
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The Investigation of Diamond Field Emission ArraysXu, J. / Li, Q. / Liu, X. / Chen, C. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 325
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Effect of Diamond Growth Parameters on Field Emission CurrentHong, D. / Aslam, D. M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 329
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Fabrication and Characterization of Various Carbon-Clad Silicon Microtips with Ultra-Small Tip RadiiKu, T. K. / Chen, S. H. / Yang, C. D. / She, N. J. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 334
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Electron Emission Characteristics of Pulsed Laser Deposited Diamond-Like FilmsChuang, F. Y. / Sun, C. Y. / Cheng, H. F. / Wang, W. C. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 339
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Enhancement of Electron Emission Efficiency of Mo-tips by Diamond-Like Carbon CoatingsChuang, F. Y. / Sun, C. Y. / Cheng, H. F. / Wang, W. C. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 344
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I-V Characteristics of Volcano Type Si FEAs with Diamondlike Carbon CoatingKim, H. / Young Whan Choi / Jeong Og Choi / Hyo Soo Jeong / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 349
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Low Temperature Reactive Ion Etching of Silicon With SF6/O2 PlasmasWells, T. / El-Gomati, M. M. / Wood, J. / Johnson, S. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 354
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Fine Structure in the Secondary Electron Emission Peak for CVD Diamond Films with Negative Electron AffinityAsnin, V. M. / Krainsky, I. L. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 358
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A Novel Low-Voltage Ballistic-Electron-Emission SourceHagen, C. W. / Van Bakel, G. P. E. M. / Borgonjen, E. G. / Kruit, P. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 363
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A Fully-LSI-Process-Compatible Si Field Emitter Technology with High Controllability of Emitter Height and SharpnessTakemura, H. / Furutake, N. / Nisimura, M. / Tsuida, S. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 367
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Fabrication of Gated Polycrystalline Silicon Field EmittersHuq, S. E. / Huang, M. / Wilshaw, P. R. / Prewett, P. D. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 371
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Fabrication of Gated Silicon Spike Emitter Structures Using Micromachining Mold TechnologyFleming, J. G. / King, D. B. / Barron, C. C. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 375
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Modification of Fillet Structures to Form Tip EmittersFleming, J. G. / King, D. B. / Talin, A. A. / Felter, T. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 380
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Emission Characteristics of Silicon Field Emitter Arrays Fabricated by Spin-On-Glass Etch-back ProcessJin Ho Lee / Sung Weon Kang / Byoung Gon Yu / Kyoung Ik Cho / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 384
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A New Fabrication Process of Volcano-Shaped Field emitters for Large-Area Display ApplicationsChun Gyoo Lee / Park, B. G. / Jong Duk Lee / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 388
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Fabrication of Volcano Emitters Using Chemical Mechanical Polishing (CMP)Busta, H. / Gammie, G. / Skala, S. / Fury, M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 393
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Fabrication Technology of High Frequency and High Power Durable Surface Acoustic Wave Devices for Mobile Radio CommunicationsYamada, J. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 398
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A Novel Structure of Silicon Field Emission Cathode with Sputtered TiW for Gate ElectrodeSung Weon Kang / Jin Ho Lee / Byoung Gon Yu / Kyoung Ik Cho / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 403
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A New Method of Fabrication of All-Metal Tips for Field Emission ArraysGavrilov, M. V. / Kolosov, V. V. / Prokhorov, V. V. / Mironov, B. N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 406
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High Quality Silicon-Nitride Thin Films Grown by Helium Plasma-Enhanced Chemical Vapor DepositionLim, S. / Beyong Kwon Ju / Jung, J.-H. / Kim, S.-J. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 411
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Testing of Fillet Emitter Structures with Well Defined Emitter-to-Gate SpacingsKing, D. B. / Fleming, J. G. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 415
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A New Fabrication Method of Silicon Field Emitter Array with Local Oxidation of Polysilicon and Chemical-Mechanical-PolishingJin Ho Lee / Sung Weon Kang / Sang Gi Kim / Song, Y.-H. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 419
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Fabrication and Characterization of Gated n+ Polycrystalline Silicon Field Emitter ArraysHyung Soo Uh / Sang Jik Kwon / Park, H. S. / Jong Duk Lee / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 423
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Metal FEAs on Double Layer Structure of Polycrystalline SiliconIl Hwan Kim / Chun Gyoo Lee / Jong Duk Lee / Park, B. C. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 427
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Anodic bonding technique under low-temperature and low-voltage using evaporated glassChoi, Woo-Beom / Ju, Byeong-Kwon / Jeong, Seong-Jae / Lee, Nam-Yang / Koh, Ken-Ha / Hsakard, M.R. / Sung, Man-Young / Oh, Myung-Hwan et al. | 1996
- 427
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Anodic Bonding Technique For Vacuum Packging of Microelectronic DevicesChoi, W.-B. / Ju, B.-K. / Sung, M.-Y. / Jeong, S.-J. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 431
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Selected-Area Deposition of Diamond Films on SiN/Si surfaces with Microwave plasma enhanced CVDChen, Y.-H. / Hu, C.-T. / Lin, L.-N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 436
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Deposition of Diamond Films on SiO2 Surface Using High Power Microwave Enhanced Chemical Vapor Deposition ProcessLee, J.-S. / Liu, K.-S. / Lin, I.-N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 441
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DC Bias Effect on the Synthesis of (001) Textured Diamond Films on SiliconLee, J. S. / Liu, K. S. / Lin, I.-N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 446
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Realization of MW ECR-Plasma Sources and Technological Processes for Field Emitter Arrays of Large Flat DisplaysGulyaev, Y. V. / Yafarov, R. K. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 449
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Low-Voltage Pulsed Magnetron with Heating Free ExcitationMakhov, V. I. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 453
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About a Change of the Threshold Voltage at Nanostructure Formation m the Scanning Tunneling MicroscopeVladimirov, G. G. / Drozdov, A. V. / Rezanov, A. N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 458
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Construction of a Three-dimensional Microtriode by Nanolithography with Electron-beam Induced DepositionKoops, H. W. P. / Schoessler, C. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 463
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Atomically Sharp Features Grown by Silicon Molecular Beam EpitaxyHobart, K. D. / Twigg, M. E. / Gray, H. F. / Shaw, J. L. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 468
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Progress in Understanding Liquid-Metal Ion Source OperationForbes, R. G. / Djuric, Z. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 473
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Field evaporation of tungsten silicides microprotrusionsLoginov, M. V. / Shrednik, V. N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 477
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High temperature field evaporation of the Hf-Mo-alloyLoginov, M. V. / Shrednik, V. N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 481
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An STM application of the surface diffusion metal ion source: Li nanostructures on PtGupalo, M.S. / Yarish, I.L. / Zlupko, V.M. / Suchorski, Y. et al. | 1996
- 484
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Field desorption point source of alkali and alkaline-earth metal ionsBernatskii, D. P. / Parlor, V. G. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 487
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Atom probe determination of the multycomponent material thermo-field microprotrusion parametersKontorovich, E. L. / Loginov, M. V. / Shrednik, V. N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 490
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RF Applications Using Field Emitter Arrays (FEAs)Yokoo, K. / Ishizuka, H. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 501
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Patterning of Vertical Thin Film Emitters in Field Emission Arrays and Their Emission CharacteristicsKarpov, L. D. / Genelev, A. P. / Drach, V. A. / Zasemkov, V. S. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 505
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A High Speed Circuit Scheme for Driving Field Emission ArrayLu, C. W. / Lee, C. L. / Huang, J. M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 509
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On the Capacitance of Vacuum Microelectronic Devices with Different Field Emitter ShapesWang, B. / Tang, Y. / Sin, J. K. O. / Poon, V. M. C. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 514
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On the Problem of Planar Edge Arrays as Basic Emitting Structures for Vacuum MicroelectronicsPetrov, E. N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 519
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Emission of low- voltage multi- tip carbon matrices coated by carbon clastersGulyaev, Y. V. / Sinitsyn, N. I. / Torgashov, G. V. / Grigoriev, Y. A. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 522
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Experimental Study of Matrix Carbon Field Emission Cathodes and Computer Aided Design of Electron Guns for Microwave Power Devices Exploring These CathodesGrigoriev, J. A. / Kudryashov, V. P. / Petrosyan, A. I. / Penzyakov, V. V. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 526
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Emission Characteristic of Diamond-Tip FEA Fabricated by Transfer Mold TechniqueKim, S.-J. / Beyong Kwon Ju / Yun Hi Lee / Park, B. S. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 530
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Characterization of CVD Diamond Film and Diamond-Tip Field Emitter Array for FED ApplicationsBeyong Kwon Ju / Kim, S.-J. / Yun Hi Lee / Park, B. S. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 534
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New cathode structures of Si-based field emitter arraysKim, Donghwan / Kwon, Sang-Jik / Lee, Jong-Duk et al. | 1996
- 534
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A New Cathode Structures of Si-Based Field Emitter ArraysKim, D. / Sang Jik Kwon / Jong Duk Lee / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 538
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The Characteristics of Silicon Field Emission TriodeChen, P.-A. / Chen, Q.-X. / Huang, Z.-P. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 542
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Patterning and Electrical Testing of Field Emission Arrays with Novel Emitter GeometriesKarpov, L. D. / Genelev, A. P. / Mirgorodski, Y. V. / Tikhonski, A. N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 547
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Prospects For Reducing Arc Damage In RF-Compatible FEAsShaw, J. L. / Gray, H. F. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 552
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Co-Development of Field Emission Displays of Scientific Research Institute "Volga"(Russia) and SAMSUNG ADVANCED INSTITUTE (Korea)Gorfinkel, B. I. / Jong Min Kim / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 557
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Data Line Driver Design for a 10" 480x(640x3) Color FEDWang, C.-C. / Wu, J.-C. / Huang, C.-M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 562
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Optical Characteristics of Phosphor Screen in Field Emission EnvironmentsJae Soo Yoo / Byung Soo Jeon / Sang Won Kang / Jong Duk Lee / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 566
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4" Field Emission Display Development And Its Reliability AnalysisKim, J. M. / Gorfinkel, B. I. / Choi, J. H. / Roussina, E. V. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 566
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4 field emission dispaly development and its reliability analysisKim, J.M. / Gorfinkel, B.I. / Kang, J.H. / Roussina, E.V. / Kim, J.W. / Chernyaeva, I.V. / Choi, J.H. / Zoukarneev, A.R. et al. | 1996
- 571
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Nonlinear Electron Conductance and Avalanche Transit-Time Effects in the Field Emission DiodeSolntsev, V. A. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 576
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Precision Long-Focus Field-Emission Low-Energy Multi-Beam Klystrode-Type Electron GunChubun, N. N. / Galdetsky, A. V. / Golenitsky, I. I. / Sokolova, I. M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 581
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Research on the Processing of Vacuum Microelectronic Flat-Panel DisplaysHuangfu, L.-J. / Zhu, C.-C. / Huai, Y.-J. / Tie, Z.-L. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 585
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A New Type of Vacuum Microelectronics Flat Panel Camera TubeYong Ji Lu / Guang Yi Liu / An Jing Ma / Li, W. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 589
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Expanding Functional Capabilities of Thermionic Vacuum Integrated Microcircuits as Exemplified by an A.C. AmplifierGrigorshin, I. L. / Makhurov, N. I. / Kotova, I. F. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 593
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A Series of Microcommutation Electrostatic Devices With a Wide Range of Operating VoltagesGrigorshin, I. L. / Mukhurov, N. I. / Efremov, G. I. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 596
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Influence of Silicon Doping Density on Vacuum Microelectronic Triode at the High Frequency RangeQin, M. / Huang, Q.-A. / Wei, T.-L. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 601
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Microelectronic field-emission crossed-field amplifier with two delay linesSokolov, D. V. / Trubetskov, D. I. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 606
-
Efficiency of the klystrode with field emission cathode arrayRyskin, N. M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 610
-
Distributed generator with extended interaction on field emitter arraysZakharchenko, Y. F. / Sinitsyn, N. I. / Gulyaev, Y. V. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 614
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Characterization of Novel Powder and Thin Film RGB Phosphors for Field Emission Display ApplicationChakhovskoi, A. G. / Malinowski, M. E. / Talin, A. A. / Felter, T. E. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 619
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Thin Film Phosphor Prepared by Physical Vapor Deposition for FED ApplicationYun Hi Lee / Man Ho Song / Ju, B. K. / Myung Hwan Oh / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 623
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Economic Estimates of Forecasted Development and Manufacture of Field Emission Displays on Edge Planar Elemental BasePetrov, E. N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 628
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Investigation of High-Power Device and Process for Field Emission DisplayYeh, C.-F. / Liu, J.-S. / Huang, C.-M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 631
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Low Voltage Phosphors for FEDsVecht, A. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 637
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Doped nanocrystalline phosphors for low voltage displaysGoldburt, E. T. / Bhargava, R. N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 638
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Field-Emitter-Array Development for Microwave ApplicationsSpindt, C. A. / Holland, C. E. / Schwoebel, P. R. / Brodie, I. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 640
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Current Bunching in Static Field and Novel Input Stage for Microwave Devices Based on Spindt Type CathodesGaldetskiy, A. V. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 645
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Electron and Ion Emission from Liquid MetalsBaskin, L. M. / Fursey, G. N. / Shirochin, L. A. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 647
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Prospects of Lithium Liquid Metal Ion Sources in Nanometer-scale Focused Ion Beam TechnologyMitterauer, J. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 648
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Interaction of the Working Surface of Field Emission Cathodes from Carbon Fibre with Ions of Residual GasesSheshin, E. P. / Suvorov, A. L. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 649
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Radiation Modification of Carbon Surface as Means of Multi-tips Field Emission Cathode Production for Different PurposesBabayev, V. P. / Balabayev, A. N. / Cheblukov, Y. N. / Didek, A. Y. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 650
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Layered Structures with Delta-Dopped Layers for Enhancement of Field EmissionEvtukh, A. / Litovchenko, V. / Marchenko, R. / Kydzinovski, S. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 651
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Characteristics of Field Emission from Silicon Tips Covered by Thin Diamond-like Carbon FilmsEvtukh, A. / Klyui, M. / Litovchenko, V. / Marchenko, R. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 652
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Space-energy Distribution of the Field Electron Flow from Tip EmittersTumareva, T. A. / Sominskii, G. G. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 655
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Electroforming and Electron Emission from a Thin Film MIM StructureTroyan, P. E. / Katkova, E. V. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 656
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Resonances in Photoemission From Semiconductors With Negative Electron AffinityGerchikov, L. G. / Subashiev, A. V. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 656
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Photoemission and Polarized Luminescence Spectra of the Strained Semiconductor LayersOskotski, B. D. / Subashiev, A. V. / Mamaev, Y. A. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 657
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Electron Emission from Gated Pt emitters Fabricated by Electron Beam Induced DepositionTakai, M. / Morimoto, H. / Kishimoto, T. / Lipp, S. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 657
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Enhancement in Electron Emission from Gated Si Field Emitter Array by Gas Ambient EmissionTakai, M. / Morimoto, H. / Kishimoto, T. / Yura, S. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 658
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Field Emission Properties of Diamond Thin FilmsBakhtizin, R. Z. / Yumaguzin, Y. M. / Pshenichnyuk, S. A. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 659
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Spin-Polarized Electrons from the Surfaces of GaAsP Strained FilmsMamaev, Y. / Yashin, Y. / Subashiev, A. / Galaktionov, M. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 660
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Electron Emission from GaN/LaB6 Cold CathodesHorning, R. D. / Akinwande, A. I. / Ruden, P. P. / Goldenberg, B. L. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 661
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Diamond Coated Spindt-Type Arrays for Emission EnhancementHeinen, V. / Varaljay, N. / Dayton, J. A. / Mearini, G. T. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 662
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Tip Emitter Structures Fabricated with Using the Scanning Tunneling MicroscopeShkuratov, S. I. / Dorofeev, I. A. / Volgunov, D. G. / Shlimanov, S. N. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 663
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Characterization of Lateral Thin-Film-Edge Field Emitter ArraysJohnson, B. R. / Akinwande, A. I. / Murphy, D. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 668
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A Trial Scanning Atom Probe and Field Distribution at a Tip Apex of a Micro-Tip ArrayNishikawa, O. / Numada, Y. / Iwatsuki, M. / Aoki, S. / Russian Academy of Sciences / Institute of Radio Engineering and Electronics; Moscow / IEEE; Electron Devices Society et al. | 1996
- 669
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Options for FED productsCourreges, F.G. et al. | 1996
- 673
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List of authors| 1996
- i
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9th International Vacuum Microelectronics Conference| 1996