Application of a Junction FET Structure to a Low Loss Diode (English)
- New search for: Yano, K.
- New search for: Kasuga, M.
- New search for: Shimizu, A.
- New search for: Mitsui, M.
- New search for: Yano, K.
- New search for: Kasuga, M.
- New search for: Shimizu, A.
- New search for: Mitsui, M.
In:
Solid state devices and materials
;
275-277
;
1996
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ISBN:
- Conference paper / Print
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Title:Application of a Junction FET Structure to a Low Loss Diode
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Contributors:
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Conference:International conference; 14th, Solid state devices and materials ; 1996 ; Yokohama; Japan
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Published in:Solid state devices and materials ; 275-277SOLID STATE DEVICES AND MATERIALS ; 275-277
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Publisher:
- New search for: Business Center for Academic Societies
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Publication date:1996-01-01
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Size:3 pages
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Remarks:Also known as SSDM'96
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Future CMOS Scaling-Approaching the Limits? (Invited)Dennard, R. H. et al. | 1996
- 4
-
An Attempt for Industrial-Academic-Governmental Joint Research in the Basic Studies of Device, Material and Process -Research on Ultimate Manipulation of Atoms and Molecules at the National Institute for Advanced Interdisciplinary Research- (Invited)Suematsu, Y. et al. | 1996
- 7
-
Atomic-Scale and Hierarchical Modeling for Nano-Electronics (Invited)Dutton, R. W. / Kan, E. C. / Onga, S. / Okada, T. et al. | 1996
- 10
-
New Method of Extracting Inversion Layer Thickness and Charge Profile and Its Impact on Scaled MOSFETsTanaka, T. / Sugii, T. / Hu, C. et al. | 1996
- 13
-
A Novel Conductance Measurement Technique for Profiling the Lateral LDD n-Doping Concentrations of Submicron MOS DevicesChung, S. S. / Lee, G. H. / Cheng, S. M. / Liang, M. S. et al. | 1996
- 16
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A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current MeasurementCheng, S. M. / Chung, S. S. / Liang, M. S. et al. | 1996
- 19
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An Approach for Migrating to Low Voltage and Low Power ULSIs (Invited)Takeda, E. et al. | 1996
- 22
-
Proposal of Pseudo Source and Drain MOSFETs and Evaluation for 10-nm Gate MOSFETsKawaura, H. / Sakamoto, T. / Baba, T. / Ochiai, Y. et al. | 1996
- 25
-
Self-Aligned Control of Threshold Voltages in 0.1 m nMOSFETsKurata, H. / Sugii, T. et al. | 1996
- 28
-
Three-Terminal Silicon Esaki Tunneling DeviceKoga, J. / Toriumi, A. et al. | 1996
- 31
-
Lithographic Technologies for 1-Gb DRAMs and Beyond (Invited)Okazaki, S. et al. | 1996
- 34
-
Effects of Cleavage on Local Cross-Sectional Stress Distribution in Trench Isolation StructureYagishita, A. / Saito, T. / Matsuda, S. / Ushiku, Y. et al. | 1996
- 37
-
RIE-Lag Reduction by NH~3 Addition in Aluminum Alloy Etching under BCl~3/Cl~2 ChemistryYamanaka, M. / Nakagawa, H. / Kubota, M. et al. | 1996
- 40
-
Double Spacer LOCOS Process with Shallow Recess of Silicon for 0.20 m IsolationCho, B.-J. / Jang, S.-A. / Song, T.-S. / Pyi, S.-H. et al. | 1996
- 43
-
CMP with Pad-Press Ring for Superior Uniformity PerformanceNishio, M. / Murakami, T. / Hamanaka, M. et al. | 1996
- 46
-
Polysilicon Encapsulated LOCOS for Deep Submicron CMOS Lateral IsolationBadenes, G. / Rooyackers, R. / Wolf, I. D. / Deferm, L. et al. | 1996
- 49
-
Selective Nucleation Based Epitaxy(SENTAXY): A Novel Approach for Thin Film Formation (Invited)Kumomi, H. / Yonehara, T. et al. | 1996
- 52
-
Deposition and Characterization of Silicon-Germanium Alloy Thin Films on Oxide (Invited)Reif, R. et al. | 1996
- 55
-
Low Temperature Epitaxy of Si and SiGe by the Novel Centrifugal LPE Technique (Invited)Konuma, M. et al. | 1996
- 58
-
A Proposed Atomic-Layer-Deposition of Germanium on Si(100)Kitamura, T. / Sugahara, S. / Nagai, T. / Uchida, Y. et al. | 1996
- 61
-
Extended Defects in II-VI Blue Green Laser Diodes (Invited)Gunshor, R. L. / Han, J. / Nurmikko, A. V. et al. | 1996
- 62
-
Characterization of ZnMgSSe-Based Wide-Gap Laser Diodes (Invited)Nakano, K. / Ishibashi, A. et al. | 1996
- 65
-
Fundamentals of the Nitride Based Laser Diode (Invited)Akasaki, I. / Sota, S. / Sakai, H. / Amano, H. et al. | 1996
- 67
-
Bluish-Purple InGaN Multi-Quantum Well Structure Laser Diodes (Invited)Nakamura, S. et al. | 1996
- 70
-
Defect Issues in III-V Alloy Semiconductors and Their Influence on the Degradation of Optical Devices (Invited)Ueda, O. et al. | 1996
- 73
-
Optical Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVDEgawa, T. / Ishikawa, H. / Jimbo, T. / Umeno, M. et al. | 1996
- 76
-
Characterization and Control of MBE-ZnSe/GaAs(100) Substrate Interface and Regrown ZnSe/ZnSe HomointerfaceYamagata, Y. / Fujiwara, K. / Sawada, T. / Imai, K. et al. | 1996
- 79
-
MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC SubstrateIshibashi, A. / Takeishi, H. / Uemura, N. / Kume, M. et al. | 1996
- 82
-
Excitonic Properties in ZnSe/MgS SuperlatticesNashiki, H. / Kumano, H. / Suzuki, H. / Obinata, T. et al. | 1996
- 85
-
High Speed InP-Based ICs for a Fiber-to-Microwave Link (Invited)Chen, Y.-K. / Lin, J. / Humphrey, D. / Montgomery, R. K. et al. | 1996
- 88
-
Highly Selective Wet-Etching Using Adipic Acid for Uniform Damage-Free Process of InAlAs/InGaAs HEMTsHiguchi, K. / Uchiyama, H. / Shiota, T. / Kudo, M. et al. | 1996
- 91
-
New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTsOka, T. / Ouchi, K. / Mochizuki, K. / Nakamura, T. et al. | 1996
- 94
-
InGaP/GaAs Sub-Square-Micron Emitter HBT with f~m~a~x > 100 GHzHirata, K. / Tanoue, T. / Masuda, H. / Uchiyama, H. et al. | 1996
- 97
-
Photonic Sampling of Ultrafast Electronic Devices: Bridging the Measurement Gap (Invited)Allam, J. et al. | 1996
- 100
-
Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs DevicesArakawa, M. / Kishimoto, S. / Mizutani, T. et al. | 1996
- 103
-
The Change of Mo/GaAs Schottky Characteristics by the Forward Gate CurrentOhshima, T. / Shigemasa, R. / Kimura, T. et al. | 1996
- 106
-
Enhancement of Schottky Barrier Heights on Indium Phosphide-Based Materials by In-Situ Electrochemical Process and Its MechanismSato, T. / Uno, S. / Hashizume, T. / Hasegawa, H. et al. | 1996
- 109
-
Metal CVD Technology for ULSI Applications: The Aluminum Route (Invited)Knorr, A. / Faltermeier, J. / Talevi, R. / Gundlach, H. et al. | 1996
- 112
-
Self-Aligned Passivation Technology for Copper Interconnection Using Copper-Aluminum AlloyAwaya, N. / Kobayashi, T. et al. | 1996
- 115
-
Gap-Filling of Cu Employing Self-Sustained Sputtering with ICP IonizationIchiki, T. / Kikuchi, T. / Sano, A. / Shingubara, S. et al. | 1996
- 118
-
A Study of Via-Electromigration Failure in Multilevel Interconnection with High Temperature Sputtered AluminumKageyama, M. / Hashimoto, K. / Onoda, H. et al. | 1996
- 121
-
Ultra-Shallow Doping for Si Sub-0.1 m Devices (Invited)Matsumoto, S. et al. | 1996
- 124
-
The Role of Hydrogen during Rapid Vapor-Phase Doping Analyzed by FTIR-ATRKiyota, Y. / Suzuki, S. / Inada, T. et al. | 1996
- 127
-
Channel Doping Engineering with Indium as an Alternative p-Type DopantLee, Y.-T. / Song, K.-W. / Park, B.-G. / Lee, J. D. et al. | 1996
- 130
-
Influence of Ion Energy on Carrier Activation and Source/Drain Parasitic Resistance in Low-Energy Ion Implantation for 0.15 m MOSFETsNishida, A. / Murakami, E. / Kimura, S. et al. | 1996
- 133
-
A Novel Technique for Ultrathin CoSi~2 Layers: Oxide Mediated EpitaxyTung, R. T. et al. | 1996
- 136
-
Anomalous Junction Leakage Behavior of Ti-SALICIDE Contacts on Ultra-Shallow JunctionsSakata, A. / Koyama, M. / Akutsu, H. / Kunishima, I. et al. | 1996
- 139
-
Advanced Ti Salicide Technology for High Performance Quarter-Micron Logic LSIsSuenaga, J. / Sumi, H. / Tajima, K. / Horiuchi, A. et al. | 1996
- 142
-
Reconditioning-Free Polish for Inter-Layer-Dielectric PlanarizationNakamura, K. / Kishii, S. / Arimoto, Y. et al. | 1996
- 145
-
Reliability of Low-Parasitic-Capacitance Multilevel Interconnection Using Surface-Densified Low-curly epsilon Organic Spin-on GlassFurusawa, T. / Homma, Y. et al. | 1996
- 148
-
Improvement of Current Injection of Porous SiliconLaih, L.-H. / Chen, Y.-A. / Liang, N.-Y. / Tsay, W.-C. et al. | 1996
- 151
-
A New Method for Measurement of Micro Defects near the Surface of Si Wafers - Optical Shallow Defect Analyzer (OSDA)Takeda, K. / Ishida, H. / Hiraiwa, A. et al. | 1996
- 154
-
A New Technique for Quantitative Analysis of Metallic Contamination inside Deep-Submicron-Diameter HolesAoki, H. / Yamasaki, S. / Aoto, N. et al. | 1996
- 157
-
Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHVAndo, A. / Sakamoto, K. / Miki, K. / Matsumoto, K. et al. | 1996
- 160
-
Atomic Step Morphology of Epitaxially Grown and H~2 Annealed Si SurfaceKunii, Y. / Nagase, M. et al. | 1996
- 163
-
The Increase of the Native Oxide Thickness of H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room AtmosphereItoga, T. / Kojima, H. / Yugami, J. / Ohkura, M. et al. | 1996
- 166
-
Native Oxide Growing Behavior on Si Crystal Structure and ResistivitySekine, K. / Choi, G.-M. / Morita, M. / Ohmi, T. et al. | 1996
- 169
-
Quantum-Effect Electron Devices Using Metal/Insulator Nanostructures (Invited)Asada, M. / Watanabe, M. / Saitoh, W. / Mori, K. et al. | 1996
- 172
-
Nanometer-Scale Local Oxidation of Si Using SiN Islands Formed in the Early Stages of NitridationYamamoto, T. / Tabe, M. et al. | 1996
- 175
-
Resonant Tunneling through SiO~2/Si Quantum Dot/SiO~2 Double Barrier StructuresFukuda, M. / Nakagawa, K. / Miyazaki, S. / Hirose, M. et al. | 1996
- 178
-
Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si LayerOno, Y. / Takahashi, Y. / Horiguchi, S. / Murase, K. et al. | 1996
- 181
-
Luminescence from InP/GaInP Quantum Dots Excited by Micro-Photoluminescence or by Local Injection with Scanning-Tunneling Microscope (Invited)Samuelson, L. / Castrillo, P. / Hessman, D. / Lindahl, J. et al. | 1996
- 184
-
Scanning Capacitance Microscopy as a Characterization Tool for Semiconductor DevicesYamamoto, T. / Suzuki, Y. / Miyashita, M. / Sugimura, H. et al. | 1996
- 187
-
Experimental Evidence of Hot Electron Detection with Scanning Hot Electron Microscopy (SHEM)Vazquez, F. / Kobayashi, D. / Kobayashi, I. / Furuya, K. et al. | 1996
- 190
-
Development of an In-Situ Method of Fabricating Artificial Atom Structures on the Si(100) SurfaceHashizume, T. / Heike, S. / Lutwyche, M. I. / Watanabe, S. et al. | 1996
- 193
-
Self-Ordered Quantum Nanostructures Grown on Nonplanar Substrates (Invited)Kapon, E. et al. | 1996
- 196
-
Spin-Splitting Reversal in InGaAs/InP Quantum-Wires in High Magnetic FieldHammersberg, J. / Notoral, M. / Weman, H. / Potemski, M. et al. | 1996
- 199
-
Lasing Oscillation of Vertical Microcavity Quantum Dot LasersNishioka, M. / Sogawa, F. / Kitamura, M. / Schur, R. et al. | 1996
- 202
-
Successful Passivation of Air-Exposed AlGaAs Surfaces by a Silicon Interface Control Layer-Based TechniqueIkeya, K. / Kodama, S. / Hashizume, T. / Hasegawa, H. et al. | 1996
- 205
-
Phototransistors Using Point Contact StructuresNagamune, Y. / Noda, T. / Ohno, Y. / Arakawa, Y. et al. | 1996
- 208
-
Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling DiodeWirner, C. / Awano, Y. / Futatsugi, T. / Yokoyama, N. et al. | 1996
- 211
-
Nonlinear Optical Response of Excitons in Semiconductor Microcavities (Invited)Hanamura, E. et al. | 1996
- 214
-
Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-1 SuperlatticesOhtani, N. / Hosoda, M. / Mimura, H. / Tominaga, K. et al. | 1996
- 217
-
New Realization Method for Three-Dimensional Photonic Crystal in Optical Wavelength Region - Experimental ConsiderationYamamoto, N. / Noda, S. / Sasaki, A. et al. | 1996
- 220
-
Novel Radiation Pattern of Spontaneous Emission from Photonic Bandgap Crystal Cavity LaserHirayama, H. / Hamano, T. / Aoyagi, Y. et al. | 1996
- 223
-
Spin-Charge Coupled Fuctionalities of Oxide Materials (Invited)Tokura, Y. et al. | 1996
- 224
-
Initial Stage of GaN MBE Growth Studied by Ion Scattering and Recoiling SpectrometryKubo, M. / Nozawa, K. et al. | 1996
- 227
-
Exciton Spectra of Cubic and Hexagonal GaN Epitaxial FilmsChichibu, S. / Okumura, H. / Feuillet, G. / Nakamura, S. et al. | 1996
- 230
-
Demonstration of an Electronic Grade Ti/AlN/Si Meta-Insulator-Semiconductor CapacitorZhang, X. / Walker, D. / Saxler, A. / Kung, P. et al. | 1996
- 233
-
Evaluation of Killer Particle Size in Deep Submicron DevicesSasaki, Y. / Kitajima, H. et al. | 1996
- 236
-
Suppression of Current-Induced Degradation in Laser-Crystallized Polycrystalline Silicon Films by Adding OxygenChoi, H.-S. / Jun, J.-H. / Han, M.-K. et al. | 1996
- 239
-
Local-Symmetry Induced Light Emission from Si/Si~1~-~xGe~x/Si Quantum WellsKimura, Y. / Nakagawa, K. / Takagi, K. / Miyao, M. et al. | 1996
- 242
-
Contamination-Free Physical Resist Stripping by Megasonic/IPA/Fluoride Enhanced Lift-off ProcessingJizaimaru, T. / Ojima, S. / Omae, S. / Ohmi, T. et al. | 1996
- 245
-
Rapid Thermal Annealing Using the Combustion of H~2 with N~2OTajima, A. / Takashima, N. / Sunaga, Y. / Sameshima, T. et al. | 1996
- 248
-
Defects in Si Thin-Film Transistors Studied by Spin-Dependent TransportKawachi, G. / Graeff, C. F. O. / Brandt, M. S. / Stutzmann, M. et al. | 1996
- 251
-
Characterization of Undoped a-Si:H by Charge Deep-Level Transient SpectroscopyDurny, R. / Nadazdy, V. / Thurzo, I. et al. | 1996
- 254
-
Oxidation of Amorphous Silicon for Superior Thin Film Transistors (OASIS TFT)Miyasaka, M. / Komatsu, T. / Ohshima, H. et al. | 1996
- 257
-
An Investigation on Stress Effect in Poly-Si Thin Film Transistors Fabricated by Metal Induced Lateral CrystallizationIhn, T.-H. / Lee, B.-I. / Lee, S.-W. / Jeon, Y.-C. et al. | 1996
- 260
-
High Reliability Trench Isolation Technology with Elevated Field Oxide Structure for Sub-Quarter Micron CMOS DevicesUkeda, T. / Yamada, T. / Yamanaka, M. / Kudo, C. et al. | 1996
- 263
-
A Novel Dual Gate CMOS Technology Using Low Energy Phosphorous/Boron Implantation and Arsenic Pre-AmorphizationNakaoka, H. / Hori, A. / Umimoto, H. / Kanda, A. et al. | 1996
- 266
-
High Density Flash Memory Using a Novel Bipolar Action-Controlled Electrical FuseYi, J.-H. / Kim, J. / Choi, J.-H. / Chung, C.-H. et al. | 1996
- 269
-
A Novel NOR Virtual-Ground Array Architecture for High Density FlashYamauchi, Y. / Sakiyama, K. et al. | 1996
- 272
-
0.8m CMOS Process Compatible 60V - 100momegamm^2 Power MOSFET on Bonded SOIKawaguchi, Y. / Yamaguchi, Y. / Funaki, H. / Terazaki, Y. et al. | 1996
- 275
-
Application of a Junction FET Structure to a Low Loss DiodeYano, K. / Kasuga, M. / Shimizu, A. / Mitsui, M. et al. | 1996
- 278
-
Improving Transient Response of Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe FilmLaih, L.-H. / Wang, J.-C. / Chen, Y.-A. / Tsay, W.-C. et al. | 1996
- 281
-
A Concise Narrow-Channel Effect Model for Sub-Quarter-Micron SOI PMOS Devices Suitable for CAD of SOI CMOS ULSI CircuitsKuo, J. B. / Su, K. W. et al. | 1996
- 284
-
Hot-Carrier Effect of an Ultra-Thin-Film SOI Power MOSFETMatsumoto, S. / Yaginuma, H. / Yachi, T. et al. | 1996
- 287
-
A New Dual-Gate SOI LIGBT with the Shorted AnodeLee, B.-H. / Lee, W.-O. / Lim, M.-S. / Park, J.-E. et al. | 1996
- 290
-
A New Gate-Overlapped LDD Poly-Si Thin Film TransistorsChoi, K.-Y. / Lee, J.-W. / Han, M.-K. / Bae, B.-S. et al. | 1996
- 293
-
A Universal Relationship between Boron Penetration and Gate Oxide Reliability for Surface Channel PMOSFETArai, M. / Nakabayashi, T. / Yabu, T. / Matsuo, I. et al. | 1996
- 296
-
Effect of Nitride Sidewall Spacer on Hot Carrier Reliability Characteristics of MOSFET'sHwang, H. / Lee, D.-H. / Hwang, J. M. et al. | 1996
- 299
-
Sb Multiple Ion Implanted Channel for Low V~t~h, Deep Submicron SOI-pMOSFETsSatoh, A. / Suzuki, K. / Sugii, T. et al. | 1996
- 302
-
Reduction of Charge Build-up during Reactive Ion Etching by Using SOI StructuresArita, K. / Akamatsu, M. / Asano, T. et al. | 1996
- 305
-
Thinning of SOI Bonded Wafers by Applying Voltage during KOH EtchingOgura, A. et al. | 1996
- 308
-
Two-Dimensional Analytical Subthreshold Model and Optimal Scaling of Fully-Depleted SOI MOSFET Down to 0.1 m Channel LengthPidin, S. / Koyanagi, M. et al. | 1996
- 311
-
A 100 15nm Thick 8-inch Bonded SOI Fabricated with a Selective Polishing MethodHashimoto, M. / Ohkubo, Y. / Shimanoe, M. / Nakamura, M. et al. | 1996
- 314
-
Enhancement and Suppression of Band-to-Band Tunneling Current in Ultra-Thin nMOSFETs/SIMOX: Influence of Superficial Si Layer Thickness and It's Future ProspectIshiyama, T. / Omura, Y. et al. | 1996
- 317
-
Impact of Current Gain Increment Effect on Alpha Particle Induced Soft Errors in SOI DRAMsSatoh, S. / Tosaka, Y. / Suzuki, K. / Itakura, T. et al. | 1996
- 320
-
Relation between Kink Effect and Impact Ionization Effect in SOI MOSFETs with Body TerminalMatsumoto, T. / Kudoh, Y. / Terao, N. / Kim, J. et al. | 1996
- 323
-
Analysis on the Threshold Voltage Fixing and the Floating-Body-Effect Suppression for 0.1 m Fully Depleted SOI-MOSFETKoh, R. / Matsumoto, H. et al. | 1996
- 326
-
A New TFT-LCD with In-Plane Switching Mode of Nematic Liquid Crystals (Invited)Kondo, K. / Kawakami, H. et al. | 1996
- 329
-
Three-Level Charge-Pumping Technique for Grain-Boundary Trap Evaluation in Polysilicon Thin Film TransistorsKim, K.-J. / Kim, O. et al. | 1996
- 332
-
Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser IrradiationPark, C.-M. / Yoo, J.-S. / Min, B.-H. / Moon, D.-K. et al. | 1996
- 335
-
Low Temperature( 550C) CMOS Thin-Film Transistors in RTCVD Poly-Si~0~.~8~8Ge~0~.~1~2 FilmsLee, S.-K. / Choe, S.-M. / Ahn, C.-G. / Chung, W.-J. et al. | 1996
- 338
-
A Study on Fabrication of Multigate/Multichannel Polysilicon TFTPark, J.-H. / Kim, C.-J. et al. | 1996
- 341
-
Atomic Scale Oxidation Process on Hydrogen-Terminated Silicon SurfaceNohira, H. / Okube, Y. / Iijima, E. / Yamamoto, H. et al. | 1996
- 344
-
Controlled Nitrogen Incorporation at Si-SiO~2 Interfaces by Remote Plasma-Assisted ProcessingKoh, K. / Niimi, H. / Lucovsky, G. et al. | 1996
- 347
-
Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P^+-Poly-Si Gate of PMOSFET'sChao, T. S. / Chien, C. H. / Hao, C. P. / Liaw, M. C. et al. | 1996
- 350
-
Theoretical Analysis of Hydrogen-Related Defects in SiO~2 Thin Film by Molecular Orbital MethodKanashima, T. / Okuyama, M. / Hamakawa, Y. et al. | 1996
- 353
-
Mechanism for Desorption of SiF~4 from SiO~2 Film Surface in HF SolutionsOku, T. / Sato, K. / Otsubo, M. et al. | 1996
- 356
-
Local Atomic Bonding in Fluorinated Silicon Oxides: Static Dielectric Constant and Chemical StabilityLucovsky, G. / Yang, H.-Y. et al. | 1996
- 359
-
Distribution of Trapped Electron and Hole in Thin SiO~2 FilmLim, K. N. / Hong, S. / Lee, K. et al. | 1996
- 362
-
Effect of Metals (Fe,Cu) on 8-nm-Thick Gate Oxide ReliabilityShiramizu, Y. / Tanaka, M. / Yamasaki, S. / Nakamori, M. et al. | 1996
- 365
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Two Correlated Mechanisms in Thin SiO~2 BreakdownSatake, H. / Yasuda, N. / Takagi, S. / Toriumi, A. et al. | 1996
- 368
-
A Percolation Approach to Dielectric Breakdown StatisticsTanamoto, T. / Toriumi, A. et al. | 1996
- 371
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Metallic Impurity Growing Behavior on Surface Crystal StructureChoi, G.-M. / Sekine, K. / Morita, H. / Ohmi, T. et al. | 1996
- 374
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Selective Solid-Phase Crystallization of Amorphous Si by Oxygen Plasma TreatmentOkada, Y. / Aoto, K. / Asano, T. et al. | 1996
- 377
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Boron-Induced 3 x 3 Reconstruction on Si(111) SurfaceUmekawa, M. / Ohara, S. / Tatsukawa, S. / Kuriyama, H. et al. | 1996
- 380
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Transient Oxide Layer at a Thermally Grown SiO~2/Si Interface, Interpreted Based on Local Vibration and X-Ray ReflectivitySugita, Y. / Awaji, N. / Watanabe, S. et al. | 1996
- 383
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In-Situ Observation of Silicide Formation on Hydrogen-Terminated Si Surface by UHV-STM and LEEDShingubara, S. / Takata, S. / Shinabe, S. / Takahashi, E. et al. | 1996
- 386
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Observation of Solution/Si Interface Using IR Spectrochemical Cell During Wet Chemical OxidationSugita, Y. / Watanabe, S. et al. | 1996
- 389
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High Temperature STM Observation of Layer-by-Layer Etching of Si(111) with O~2 FluxKomeda, T. / Nishioka, Y. et al. | 1996
- 392
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Scanning Tunneling Microscopy Observation on the Atomic Structures of Step Edges and Etch Pits on NH~4F-Treated Si(111) SurfaceSakaue, H. / Takahashi, E. / Tanaka, T. / Kojima, A. et al. | 1996
- 395
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Effect of Cap-Metals on Co Salicide ProcessMinakata, H. / Goto, K. / Sugii, T. et al. | 1996
- 398
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Correlation of W-Si-N Film Microstructure with Barrier Performance against Cu DiffusionShimooka, Y. / Iijima, T. / Nakamura, S. / Suguro, K. et al. | 1996
- 401
-
A Comparative Study of CVD and PVD Tungsten Nitride Diffusion Barriers for Cu MetallizationSun, S. C. / Tsai, M. H. / Chiu, H. T. / Chuang, S. H. et al. | 1996
- 404
-
Atomistic Observation of Titanium Adsorption and Initial Growth of Titanium Silicide on Si(111)Kuriyama, H. / Tatsukawa, S. / Umekawa, M. / Ohara, S. et al. | 1996
- 407
-
Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric CapacitorsMatsui, Y. / Kushida, K. / Miki, H. / Torii, K. et al. | 1996
- 410
-
Suppressing Ion Implantation Induced Oxide Charging by Utilizing Physically Damaged Oxide RegionTakase, M. / Eriguchi, K. / Mizuno, B. et al. | 1996
- 413
-
Formation of Ultra-Shallow and Low-Leakage p^+n Junctions by Low-Temperature Post-Implantation AnnealingNakada, A. / Kanemoto, K. / Oka, M. M. / Tamai, Y. et al. | 1996
- 416
-
A Novel LOCOS-Trench Combination Isolation Method for Maximum Chemical Mechanical Polishing(CMP) Process WindowPark, T.-S. / Park, M. H. / Lee, H. S. / Kim, S. E. et al. | 1996
- 419
-
Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling ProcessShiozawa, K. / Oishi, T. / Maeda, H. / Murakami, T. et al. | 1996
- 422
-
A Novel Shallow Trench Isolation TechniqueCheng, J.-Y. / Lei, T. F. / Chao, T. S. et al. | 1996
- 425
-
Strain Effects of Ge Islands on Si~1~-~xGe~x/Si Quantum WellKim, E. S. / Usami, N. / Shiraki, Y. et al. | 1996
- 428
-
Effects of Thermal Stability of Si~1~-~x~-~yGe~xC~y Layers on Properties of Their Contacts with AluminumMi, J. / Gupta, A. / Yang, C. Y. / Zhu, J. et al. | 1996
- 431
-
Metrological Applications of Single Electron Tunneling (Invited)Martinis, J. M. / Keller, M. W. / Zimmerman, N. M. / Steinbach, A. H. et al. | 1996
- 433
-
Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation ProcessMatsumoto, K. / Ishii, M. / Shirakashi, J. / Vartanian, B. J. et al. | 1996
- 437
-
High-Temperature Operation of Al/Al~2O~3/Al Single-Electron TransistorsNakamura, Y. / Chen, C. D. / Tsai, J. S. et al. | 1996
- 440
-
Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)Shirakashi, J. / Ishii, M. / Matsumoto, K. / Miura, N. et al. | 1996
- 443
-
Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron GasKasai, S. / Jinushi, K. / Okada, H. / Tomozawa, H. et al. | 1996
- 446
-
GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron TransistorsAusting, D. G. / Honda, T. / Tarucha, S. et al. | 1996
- 449
-
Observation of Coulomb Blockade Oscillations up to 50K from InP-Based InGaAs Quantum Wires Grown by Molecular Beam EpitaxyOkada, H. / Fujikura, H. / Hashizume, T. / Hasegawa, H. et al. | 1996
- 452
-
The Resonant Tunneling Mode of a Single Electron TransistorNatori, K. / Sano, N. et al. | 1996
- 455
-
Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETsOhata, A. / Toriumi, A. et al. | 1996
- 458
-
Smart-Cut: A New S.O.I. Material Technology Based on Hydrogen Implantation and Wafer Bonding (Invited)Bruel, M. / Aspar, B. / Auberton-Herve, A.-J. et al. | 1996
- 461
-
Wafer Direct Bonding at Room Temperature by Means of the Surface Activated BondingSuga, T. / Chung, T. R. / Yang, L. / Hosoda, N. et al. | 1996
- 464
-
Evolution of Extended Defects in High Temperature (T > 1150C) Oxidized SIMOXGiles, L. F. / Kunii, Y. et al. | 1996
- 467
-
Vacuum Bonding for the Fabrication of PBSOICha, G. / Lee, B. H. / Lee, K. W. / Bae, G. J. et al. | 1996
- 470
-
Thin Film Silicon on Insulator Substrate Considerations for CMOS Technologies (Invited)Wilson, S. R. / Wetteroth, T. / Hong, S. / Shin, H. et al. | 1996
- 473
-
Advanced SOI Devices Using CMP and Wafer Bonding (Invited)Horie, H. / Nakamura, S. / Nara, Y. / Suzuki, K. et al. | 1996
- 476
-
Analysis of the Charge Density at Field Oxide/SOI and SOI/Buried Oxide Interfaces in Partially Depleted SOI MOSFET's with and without HydrogenationIwamatsu, T. / Ipposhi, T. / Miyamoto, S. / Yamaguchi, Y. et al. | 1996
- 479
-
Process Technology for Reliable SOI DRAM (Invited)Park, K.-C. / Park, J.-W. / Shim, T.-E. et al. | 1996
- 482
-
LSI Applications of 0.25-m CMOS/SIMOX Technology (Invited)Ino, M. / Tsuchiya, T. / Takeya, K. / Sakai, T. et al. | 1996
- 485
-
1-V Multigigahertz MOSFET Amplifier with an On-Chip Inductor Fabricated on a SIMOX WaferHarada, M. / Yamaguchi, C. / Tsuchiya, T. et al. | 1996
- 488
-
A Method of Hot Carrier Lifetime Prediction in Partially-Depleted Floating SOI NMOSFETsMaeda, S. / Yamaguchi, Y. / Kim, I.-J. / Joachim, H. O. et al. | 1996
- 491
-
Velocity Overshoot and G~m Limitation in sub-0.1 m Fully-Depleted SOI-MOSFETsOhba, R. / Mizuno, T. et al. | 1996
- 494
-
New Electrically-Thinned Intrinsic-Channel SOI MOSFET with 0.01 m Channel LengthShimatani, T. / Pidin, S. / Koyanagi, M. et al. | 1996
- 497
-
Electronic Interface Properties of Low Temperature Ultrathin Oxides on Si(111) Surfaces Studied by Contactless Capacitance-Voltage and Photoluminescence MethodsYoshida, T. / Koyanagi, S. / Hashizume, T. / Hasegawa, H. et al. | 1996
- 500
-
Evidence for Asymmetrical Hydrogen Profile in Thin D~2O Oxidized SiO~2 by SIMS and Modified TDSMuraoka, K. / Takagi, S. / Toriumi, A. et al. | 1996
- 503
-
Effects of Electrode Materials and Annealing Ambients on the Leakage Current of TiO~2 FilmsSun, S. C. / Chen, T. F. / Liang, T. H. / Pan, F. M. et al. | 1996
- 506
-
High Quality CVD/Thermal Stacked Gate Oxide Films with Hydrogen-Free CVD SiO~2 Formed in the SiCl~4-N~2O SystemOgata, T. / Kobayashi, K. / Watanabe, H. / Kurokawa, H. et al. | 1996
- 509
-
Impact of Nitrogen Distribution in Oxynitride Tunnel Film/Si on Band-to-Band Tunneling Current and Electron Injection in Flash MemoryArakawa, T. / Matsumoto, R. / Hayashi, T. et al. | 1996
- 512
-
Hole Trapping Due to Impurities in Amorphous Silicon DioxideKaneta, C. et al. | 1996
- 515
-
Early Stages of Oxidation of Clean Si(111)-7x7 and Si(100)-2x1 Surfaces Studied by In-Situ High Resolution X-Ray Photoelectron SpectroscopyAlay, J. L. / Hirose, M. et al. | 1996
- 518
-
Diffusion of Carbon in SiO~2 Films and Its Segregation at Si/SiO~2 InterfaceMizushima, I. / Kamiya, H. / Arai, N. / Sonoda, M. et al. | 1996
- 521
-
Significant Effect of OH inside Silicon Chemical Oxides on AHF(Anhydrous Hydrofluoric Acid) EtchingMuraoka, K. / Kunishima, I. / Hayasaka, N. / Takagi, S. et al. | 1996
- 524
-
Device Characteristics and Reliability of Thin Gate Dielectrics Grown by Light Wet Oxynitridation(LWO)Joo, M.-S. / Lee, S.-K. / Park, Y.-J. / Kim, J.-C. et al. | 1996
- 527
-
Single Crystalline Silicon Floating Gate Technology for Sub-10 nm Interelectrode DielectricsSaida, S. / Mitani, Y. / Hazama, H. / Kammbayashi, S. et al. | 1996
- 530
-
Field Acceleration Model for Time-Dependent Dielectric BreakdownKimura, M. / Koyama, H. / Yasuoka, A. et al. | 1996
- 533
-
Reliability of Ultra-Thin Gate Oxides Below 3 nm in the Direct Tunneling RegimeDepas, M. / Degraeve, R. / Nigam, T. / Groeseneken, G. et al. | 1996
- 536
-
Suppression of Hot Carrier Degradation in LDD n-MOSFETs with Gate N~2O-Nitrided O~3-OxideTamura, Y. / Ohkubo, S. / Nakanishi, T. / Kataoka, Y. et al. | 1996
- 539
-
Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current StressingYoshida, T. / Miyazaki, S. / Hirose, M. et al. | 1996
- 542
-
Evaluation of Hot-Hole Induced Interface Traps at the Tunneling SiO~2(3.5 nm)-Si Interface by the Conductance TechniqueOgawa, S. / Kobayashi, T. / Nakayama, S. / Sakakibara, Y. et al. | 1996
- 545
-
Dependence of Resonant Interband Tunneling Current on Barrier and Well Width in InAs/AlSb/GaSb/AlSb/InAs Double-Barrier StructuresKitabayashi, H. / Waho, T. / Yamamoto, M. et al. | 1996
- 548
-
Sidegating-Induced Negative Differential Resistance in MBE-Grown InAs/AlSb HFETsBolognesi, C. R. / Dvorak, M. W. / Chow, D. H. et al. | 1996
- 550
-
Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum WellSasa, S. / Yamamoto, Y. / Izumiya, S. / Yano, M. et al. | 1996
- 553
-
Determination of Lateral Confinement Energies in AlGaAs/GaAs Split-Gate Quantum Wire Structures by Far Infrared SpectroscopyYamanaka, K. / Wang, S. N. / Hirakawa, K. et al. | 1996
- 556
-
Measurement of Semiconductor Heterojunction Band Discontinuity by Free Electron LaserNishi, K. / Ohyama, H. / Suzuki, T. / Mitsuyu, T. et al. | 1996
- 559
-
Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPEMakimoto, T. / Saito, H. / Kobayashi, N. et al. | 1996
- 562
-
Step-Free Surface Grown on GaAs (111)B Substrate by Localized Area Metalorganic Vapor Phase EpitaxyNishida, T. / Kobayashi, N. et al. | 1996
- 565
-
Metastable Properties of the Dominant Electron Trap in Low-Temperature GaAs Grown by Molecular Beam EpitaxyHashizume, T. / Shiobara, S. / Hasegawa, H. et al. | 1996
- 568
-
Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs LayersMatsushita, S. / Inoue, D. / Matsumura, K. / Sawada, M. et al. | 1996
- 571
-
Missing-Dimer Structures and Their Kink Defects on MBE-Grown (2x4) Reconstructed (001)InP Surfaces Studied by UHV Scanning Tunneling MicroscopeIshikawa, Y. / Fukui, T. / Hasegawa, H. et al. | 1996
- 574
-
A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication ApplicationsLai, Y.-L. / Chang, E. Y. / Chang, C.-Y. / Liu, T. H. et al. | 1996
- 577
-
Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar TransistorsOuchi, K. / Mishima, T. / Mochizuki, K. / Oka, T. et al. | 1996
- 580
-
Noise Parameter Extraction of GaAs MESFET with Monte-Carlo SimulationBaek, J. M. / Kwon, Y. S. / Hong, S. et al. | 1996
- 583
-
Deposition of Polyimide Films by Ionized Cluster BeamKim, K. W. / Kim, N. Y. / Hong, C. E. / Kim, S. Y. et al. | 1996
- 586
-
Organic-on-InP Heterostructure Diodes for Microwave ApplicationsUrbach, P. / Ammermann, D. / Kowalsky, W. et al. | 1996
- 589
-
Electrical Properties of Al/Al~2O~3/(Ba,Rb)BiO~3/SrTiO~3(Nb) Three Terminal DeviceToda, F. / Yamada, T. / Hashimoto, K. / Abe, H. et al. | 1996
- 592
-
Analysis of Spot Shape Behavior on a Spot-Size Controllable Laser DiodeNakatsuka, S. / Arimoto, A. / Saitoh, S. et al. | 1996
- 595
-
GaInAs/AlGaInAs Semiconductor Lasers on InP Substrate with AlAs Oxide Current ConfinementOhnoki, N. / Mukaihara, T. / Hatori, N. / Mizutani, A. et al. | 1996
- 598
-
The Application of Semiconducting Low-Temperature Grown GaAs to Improve Laser Diodes Grown on Si SubstratesPhua, C. C. / Chong, T. C. / Lau, W. S. / Tan, L. S. et al. | 1996
- 601
-
650nm-Band High Power AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl~2/N~2 MixtureKidoguchi, I. / Adachi, H. / Tanaka, K. / Fukuhisa, T. et al. | 1996
- 604
-
1200 DPI Light Emitting Diode Array for Optical Printer Print HeadsOgihara, M. / Shimizu, T. / Taninaka, M. / Hamano, H. et al. | 1996
- 607
-
AFM Direct Measurement of Sidewall Roughness in GaAs/AlGaAs WaveguidesHosomi, K. / Shirai, M. / Hiruma, K. / Shigeta, J. et al. | 1996
- 610
-
Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated by an Atomic Force MicroscopeItatani, T. / Kotaki, Y. / Nakagawa, T. / Matsumoto, K. et al. | 1996
- 613
-
Localization of Photons in Two-Dimensional Triangular Lattices with Periodic DefectsFeng, X.-P. / Arakawa, Y. et al. | 1996
- 616
-
Platinum-Enhanced Oxidation of Silicon: Formation of MOS Structure below 300CKobayashi, H. / Yuasa, T. / Kawa, H. / Nakato, Y. et al. | 1996
- 619
-
Interface States for Ultrathin Chemical Oxide Layers on Si(111) and Si(100)Yamashita, Y. / Nakato, Y. / Nishioka, Y. / Kato, H. et al. | 1996
- 622
-
Properties of a New Passivation SiN~x Films Prepared by cat-CVD MethodOkada, S. / Matsumura, H. et al. | 1996
- 625
-
Effect of ECR CVD SiO~2 Film Deposition on Ferroelectric Properties of Pt/PZT/Pt CapacitorOh, S. / Park, I. S. / Kim, B. H. / Lee, S. M. et al. | 1996
- 628
-
Orientation Control of Sr~0~.~7Bi~2~.~3Ta~2O~9 Thin Films by Chemical ProcessKoiwa, I. / Kanehara, T. / Mita, J. / Iwabuchi, T. et al. | 1996
- 634
-
Application of SiOF Film Deposited Using TEOS/TEFS/O~2 System to Multi-Level Interconnection Designed with 0.25 m RuleKudo, H. / Satho, Y. / Miyazawa, H. / Harada, H. et al. | 1996
- 640
-
High Responsivity in Optically Controlled Field-Effect Transistor Using Direct Wafer Bonding TechniqueSakai, T. / Shimomura, K. et al. | 1996
- 643
-
High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated CircuitsMaeda, J. / Sasaki, Y. / Shibahara, K. / Yokoyama, S. et al. | 1996
- 646
-
Polyimide Optical Waveguide with Multi-Fan-Out for Multi-Chip Module ApplicationNoguchi, Y. / Matsumoto, T. / Kodoh, Y. / Koyanagi, M. et al. | 1996
- 649
-
Strained Double-Quantum-Well Lasers Emitting in 1.2 m Region Grown on In~0~.~2~1Ga~0~.~7~9As Ternary SubstratesOtsubo, K. / Shoji, H. / Kusunoki, T. / Suzuki, T. et al. | 1996
- 652
-
Extremely Low Astigmatism and Aspect Ratio in 650nm-Band Self-Pulsing AlGaInP Lasers with Strained-Quantum-Well Saturable-Absorbing LayerAdachi, H. / Kidoguchi, I. / Fukuhisa, T. / Tanaka, K. et al. | 1996
- 655
-
Improvement on Coupling Efficiency for Passive Alignment of Stacked Multi-Fiber Tapes to a Vertical-Cavity Surface-Emitting Laser ArrayKobayashi, Y. / Matsuda, K. / Chino, T. / Yoshida, T. et al. | 1996
- 658
-
Multilayer Organic Light Emitting Diodes for Efficient Carrier Injection and ConfinementAmmermann, D. / Bohler, A. / Dirr, S. / Kowalsky, W. et al. | 1996
- 661
-
Emission Properties of YBCO-Film Photo-Switches as THz Radiation SourcesTani, M. / Tonouchi, M. / Sakai, K. / Wang, Z. et al. | 1996
- 664
-
Transport Transition from Chaotic to Regular Trajectory in Corrugation Gated Quantum WiresOchiai, Y. / Widjaja, A. W. / Sasaki, N. / Yamamoto, K. et al. | 1996
- 667
-
Time Constant for High-Field Domain Formation in Multiple Quantum Well Sequential Resonant Tunneling DiodesShimada, Y. / Hirakawa, K. et al. | 1996
- 670
-
Extremely Flat Interfaces in In~xGa~1~-~xAs/Al~0~.~3Ga~0~.~7As Quantum Wells Grown on (411)A GaAs Substrates by MBESaeki, T. / Motokawa, T. / Kitada, T. / Shimomura, S. et al. | 1996
- 673
-
Characteristics of AlGaAs/AlGaAs Interface after In-Situ Low-Temperature H~2 Annealing and MOVPE RegrowthGotoh, S. / Horikawa, H. et al. | 1996
- 676
-
Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDsSuhara, M. / Nagao, C. / Honji, H. / Miyamoto, Y. et al. | 1996
- 679
-
Formation of Natural InAlAs Vertical SuperlatticesLee, B. / Lee, J. H. / Baek, J.-H. / Han, W. S. et al. | 1996
- 682
-
Mechanisms and Growth Characteristics of Si Sub-Atomic-Layer Epitaxy from Si~2H~6Suda, Y. et al. | 1996
- 685
-
Electron States in Crescent GaAs Coupled Quantum-WiresKomori, K. / Imanishi, H. / Wang, X.-L. / Ogura, M. et al. | 1996
- 688
-
Formation of InGaAs/InAlAs Quantum Wires and Dots with Extremely Smooth Facets on Mesa-Patterned (001)InP Substrates by Selective Molecular Beam EpitaxyAraki, M. / Hanada, Y. / Fujikura, H. / Hasegawa, H. et al. | 1996
- 691
-
Tunneling Spectroscopy of InAs Wetting Layers and Coherent Islands: Resonant Tunneling through Two- and Zero-Dimensional Electronic StatesSuzuki, T. / Nomoto, K. / Taira, K. / Hase, I. et al. | 1996
- 694
-
Single-Dot Optical Spectroscopy of Self-Organized Strained InGaAs Quantum Disks on (311)B-GaAs SubstrateKamada, H. / Temmyo, J. / Notomi, M. / Furuta, T. et al. | 1996
- 697
-
Spontaneous Formation of Nanostructures in In~xGa~1~-~xAs Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-Oriented SubstratesVaccaro, P. O. / Fujita, K. / Watanabe, T. et al. | 1996
- 700
-
Investigation of the Influence of In~0~.~5~9Ga~0~.~4~1As Relaxed Layer InAs/In~0~.~5~9Ga~0~.~4~1As/GaAs Double Quantum Well Resonant Interband Tunneling StructureYang, C. C. / Huang, K. C. / Su, Y. K. et al. | 1996
- 703
-
Excitation Power Dependent Photoluminescence Characterization and Successful Edge Passivation of Etched InGaAs Quantum Wires Formed by Electron Beam LithographyKubo, M. / Fujikura, H. / Hasegawa, H. et al. | 1996
- 706
-
A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE: Investigation of Transport PropertiesAkabori, M. / Motohisa, J. / Irisawa, T. / Hara, S. et al. | 1996
- 709
-
Photoluminescence from Deuterium Terminated Porous SiliconMatsumoto, T. / Masumoto, Y. / Nakashima, S. / Mimura, H. et al. | 1996
- 712
-
Observation of Negative Differential Resistance Phenomena in Porous Silicon Superlattice StructuresLin, J.-C. / Wang, S.-J. / Tsai, H.-Y. et al. | 1996
- 715
-
Growth Control of Nano-Needle on Silicon Surface Using Scanning Tunneling MicroscopeHeike, S. / Hashizume, T. / Wada, Y. et al. | 1996
- 718
-
In-Situ STM Observation of GaAs Surfaces after NitridationMakimoto, T. / Kasu, M. / Benchimol, J. L. / Kobayashi, N. et al. | 1996
- 721
-
Preparation and Characterization of Iridium Oxide Thin Films by DC Reactive SputteringCho, H.-J. / Horii, H. / Kang, C. S. / Park, S. O. et al. | 1996
- 724
-
Built-in Electric Field Strength in InP/n^+-InP Determined by Photoellipsometry and PhotoreflectanceXiong, Y.-M. / Saitoh, T. / Yaguchi, H. / Shiraki, Y. et al. | 1996
- 727
-
Investigation of the Indium Atom Interdiffusion on the Growth of the InGaN/GaN HeterostructureTsang, J. S. / Guo, J. D. / Chan, S. H. / Feng, M. S. et al. | 1996
- 730
-
On p-Type Doping Limits in ZnMgSSe Quaternary SemiconductorsHirano, K. / Sato, G. / Suemune, I. et al. | 1996
- 733
-
Visible and Ultraviolet Photoluminescence from Cu-III-VI~2 Chalcopyrite Semiconductors Grown by Metalorganic Vapor Phase EpitaxyChichibu, S. / Shirakata, S. / Isomura, S. / Nakanishi, H. et al. | 1996
- 736
-
Electroluminescence of Zn~xSr~1~-~xS:Ce Thin Film PhosphorsLee, S. T. / Kitagawa, M. / Ichino, K. / Kobayashi, H. et al. | 1996
- 739
-
Quantumphenomena in Nanoelectronics (Invited)Kiltzing, K. V. et al. | 1996
- 740
-
A Novel Functional Logic Gate Using Resonant-Tunneling Devices for Multiple-Valued Logic ApplicationsWaho, T. / Chen, K. J. / Yamamoto, M. et al. | 1996
- 743
-
Novel Insulated Gate InGaAs HEMT Technology Using Silicon Interface Control LayerDohmae, Y. / Suzuki, S. / Hashizume, T. / Hasegawa, H. et al. | 1996
- 746
-
Fabrication of p^+ - Gate InAs-Channel HEMT Based on InPKoizumi, R. / Tabuchi, Y. / Yoh, K. et al. | 1996
- 749
-
Carrier Transport in Nanoscale Structures (Invited)Ferry, D. K. / Akis, R. / Udipi, S. / Vasileska, D. et al. | 1996
- 752
-
A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs DotsNakano, T. / Nakagawa, T. / Yoh, K. et al. | 1996
- 755
-
Room Temperature Operation of a Lateral Tunneling Transistor Fabricated by Plane-Dependent Si Doping in Nonplanar EpitaxyOhnishi, H. / Hirai, M. / Fujita, K. / Watanabe, T. et al. | 1996
- 758
-
High Temperature Estimation of Phase Coherent Length of Hot Electron Using GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by OMVPETakemura, R. / Suhara, M. / Oobo, T. / Miyamoto, Y. et al. | 1996
- 761
-
CdF~2/CaF~2 Resonant Tunneling Diode Fabricated on Si(111)Izumi, A. / Matsubara, N. / Kushida, Y. / Tsutsui, K. et al. | 1996
- 765
-
Dissipation Engineering in Quantum Devices (Invited)Leburton, J.-P. et al. | 1996
- 767
-
"Universal" Dependence of Avalanche Breakdown on Bandstructure: Choosing Materials for High-Power DevicesAllam, J. et al. | 1996
- 770
-
Charge Storage Effects in PHEMTsSchuermeyer, F. / Cerny, C. / Bozada, C. et al. | 1996
- 773
-
Mobility Limiting Factors of n-Channel Si/SiGe Modulation-Doped Systems with Varied Channel ThicknessYutani, A. / Shiraki, Y. et al. | 1996
- 776
-
Optimum Voltage Scaling and Structure Design for the Low Voltage Operation of FN Type Flash EEPROM with High Reliability and Constant Programming TimeUeno, S. / Oda, H. / Ajika, N. / Inuishi, M. et al. | 1996
- 779
-
Investigation of ONO Layers for Application in One Time Programmable(OTP) SONOS MemoriesReisinger, H. et al. | 1996
- 782
-
Extended TDDB Model Based on Anomalous Gate Area Dependence in Ultra Thin Silicon DioxidesOkada, K. et al. | 1996
- 785
-
Spatial Distributions of Individual Traps in a Si/SiO~2 InterfaceSakamoto, T. / Kawaura, H. / Baba, T. et al. | 1996
- 788
-
Dielectric/Silicon Interface Structures and Electrical Properties (Invited)Ishitani, A. et al. | 1996
- 791
-
The Role of Atomic Hydrogen in Degradation and Breakdown of SiO~2 Films (Invited)Stathis, J. H. / Cartier, E. et al. | 1996
- 794
-
Si 2p Core-Level Shift Assignments: An Analysis of Recent Experimental and Theoretical StudiesZhang, K. Z. / Meeuwenberg, L. M. / Holl, M. M. B. / McFeely, F. R. et al. | 1996
- 797
-
Dielectric Properties of Very Thin Films of Ba~0~.~7~0Sr~0~.~3~0TiO~3 (Invited)Bilpdeau, S. / Buskirk, P. V. / Carl, R. / Kirlin, P. et al. | 1996
- 800
-
Process Integration of O~3-TEOS CVD SiO~2 for a Cover Film on Ferroelectric CapacitorsKawahara, J. / Matsuki, T. / Kishimoto, K. / Koyanagi, K. et al. | 1996
- 803
-
Material Optimization of Bismuth Based Mixed Layered Superlattice Ferroelectrics for High Performance FeRAMs (Invited)Azuma, M. et al. | 1996
- 806
-
Formation of c-Axis-Oriented Bi~4Ti~3O~1~2 Films with Extremely Flat Surface by Spin-CoatingTani, K. / Yamanobe, T. / Matsuhashi, H. / Nishikawa, S. et al. | 1996
- 809
-
Proposal of a Single-Transistor-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on Interference Problem in Write OperationIshiwara, H. / Shimamura, T. / Tokumitsu, E. et al. | 1996
- 812
-
Novel Porous Films Having Low Dielectric Constants Synthesized by a Liquid Phase Silylation of Spin-On Glass Sol for Intermetal DielectricsAoi, N. et al. | 1996
- 815
-
Low Dielectric Constant Insulator by Downstream Plasma CVD at Room Temperature Using Si(CH~3)~4/O~2Nara, A. / Itoh, H. et al. | 1996
- 818
-
Effect of Bias Addition on the Gap-Filling Properties of Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma Enhanced Chemical Vapor DepositionEndo, K. / Tatsumi, T. et al. | 1996
- 821
-
Micro Systems by Bulk Silicon Micromachining (Invited)Esashi, M. et al. | 1996
- 824
-
A New Three-Dimensional Multiport Memory for Shared Memory in High Performance Parallel Processor SystemHirano, K. / Kawahito, S. / Matsumoto, T. / Kudoh, Y. et al. | 1996
- 827
-
3D-Technology for Ultra High Density MOS ArraysKrautschneider, W. H. / Rusch, A. / Hofmann, F. / Lau, F. et al. | 1996
- 830
-
Shallow Trench Isolation for Enhancement of Data Retention Times in giga bit DRAMRoh, B. H. / Yoon, C. S. / Choi, D. U. / Kim, M. J. et al. | 1996
- 833
-
FN Program Technology of Sector Erasable Flash Memory with Conventional 2-Layer Poly Silicon ETOX Cell StructureShinmura, N. / Tanigami, T. / Hakozaki, K. / Akiyama, Y. et al. | 1996
- 836
-
High Performance Shallow Trench Isolation for High Density Flash Memory CellsDeleonibus, S. / Heitzmann, M. / Gobil, Y. / Martin, F. et al. | 1996
- 839
-
A New Low-Resistance Antifuse with Planar Metal/Dielectric/Poly-Si/Dielectric/Metal StructureBaek, J. T. / Yoo, H. J. / Chung, S. H. / Kang, S. W. et al. | 1996
- 843
-
Taking Advantage of Semiconductor Device Physics to Implement Real-Time Perception Systems (Invited)Arreguit, X. / Vittoz, E. et al. | 1996
- 845
-
Non-Volatile Metal-Ferroelectric-Insulator-Semiconductor(MFIS)FETs Using PLZT/STO/Si(100) StructuresTokumitsu, E. / Nakamura, R. / Ishiwara, H. et al. | 1996
- 848
-
A Novel Optical Adaptive Neuro-Device Using a Split-Gate MOS TransistorShin, J.-K. / Io, E. / Tsuji, K. / Yonezu, H. et al. | 1996
- 851
-
Study of 4.5 kV MOS-Power Device with Injection Enhanced Trench Gate StructureKitagawa, M. / Nakagawa, A. et al. | 1996
- 854
-
High Energy B Implantation for Fe Gettering; Evaluation of 7.5 nm Thick Gate Oxide ReliabilityHamada, K. / Eaglesham, D. J. / Hayashi, T. / Poate, J. M. et al. | 1996
- 858
-
Single-Beam and Single-Mode Emission from Surface-Emitting Laser Diodes Based on Surface Mode EmissionKoeck, A. / Finger, N. / Gmachl, C. / Golshani, A. et al. | 1996
- 860
-
CBE Grown (GaIn)(AsP) Laser Diodes for Monolithic IntegrationKratzer, H. / Nutsch, A. / Torabi, B. / Traenkle, G. et al. | 1996
- 862
-
Octahedral Void Structure Observed at tile Grown-In Defects in the Bulk of Standard CZ-Si for MOSLSIsUeki, T. / Itsumi, M. / Takeda, T. et al. | 1996
- 864
-
New Cleaning Solution; Mixture of HF/HCl and Pure Water Containing a Little Dissolved OxygenHayami, Y. / Ogawa, H. / Suzuki, M. T. / Okui, Y. et al. | 1996
- 866
-
Effective KOH Etching Prior to Modified Secco Etching for Analyzing Defects in Thin Bonded SOI WafersMitani, K. / Aga, H. / Nakano, M. et al. | 1996
- 868
-
Blue-Green Stimulated Emission in Lattice-Matched ZnHgSSe/ZnSSe Double Heterostructures by Optical PumpingEguchi, Y. / Hara, K. / Yamamoto, K. / Haneda, S. et al. | 1996
- 870
-
Proposal of a New Self-Limited Growth and Its Application to the Fabrication of Atomically Uniform Quantum NanostructuresWang, X.-L. / Ogura, M. et al. | 1996
- 872
-
Stacked Multi-Quantum-Wires Grown on Vicinal GaAs(110) Surfaces by MBEKaro, T. / Takeuchi, T. / Inoue, Y. / Inoue, K. et al. | 1996
-
Chemical-Vapor-Deposition of Hydrogen-Free Silicon-Dioxide FilmsUchida, Y. / Takei, S. / Matsumura, M. et al. | 1996
-
Silicon Micromachined Microphotonics (Invited)Lau, K. Y. / Solgaard, O. / Tien, N. / Daneman, M. et al. | 1996
-
Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma CVDTamura, T. / Inoue, Y. / Satoh, M. / Yoshitaka, H. et al. | 1996
-
Shot Noise in Single and Double Quantum Point ContactsSasaki, S. / Liu, R. C. / Tsubaki, K. / Honda, T. et al. | 1996