Atomic processes at the laser front facet during laser operation (English)
- New search for: Rechenberg, I.
- New search for: Richter, U.
- New search for: Klein, A.
- New search for: Hoeppner, W.
- New search for: Royal Microscopical Society
- New search for: Rechenberg, I.
- New search for: Richter, U.
- New search for: Klein, A.
- New search for: Hoeppner, W.
- New search for: Cullis, A. G.
- New search for: Hutchison, J. L.
- New search for: Royal Microscopical Society
In:
Microscopy of semiconducting materials
;
557-560
;
1997
-
ISBN:
-
ISSN:
- Conference paper / Print
-
Title:Atomic processes at the laser front facet during laser operation
-
Contributors:Rechenberg, I. ( author ) / Richter, U. ( author ) / Klein, A. ( author ) / Hoeppner, W. ( author ) / Cullis, A. G. / Hutchison, J. L. / Royal Microscopical Society
-
Conference:Conference; 10th, Microscopy of semiconducting materials ; 1997 ; Oxford
-
Published in:Microscopy of semiconducting materials ; 557-560CONFERENCE SERIES - INSTITUTE OF PHYSICS ; 157 ; 557-560
-
Publisher:
- New search for: Institute of Physics
-
Place of publication:Philadelphia
-
Publication date:1997-01-01
-
Size:4 pages
-
ISBN:
-
ISSN:
-
Type of media:Conference paper
-
Type of material:Print
-
Language:English
-
Keywords:
-
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
The materials basis behind the telecommunications revolutionBrinkman, W. F. / Royal Microscopical Society et al. | 1997
- 13
-
The evolution of electron beam lithography and metrology for semiconductor technologiesMatsuo, T. / Royal Microscopical Society et al. | 1997
- 25
-
The structures of extended defects in Si and other materials studied by HRTEMTakeda, S. / Royal Microscopical Society et al. | 1997
- 35
-
Defect structure of InSb grown within a synthetic opal matrixBogomolov, V. N. / Hutchison, J. L. / Samoilovich, S. M. / Kurdyukov, D. A. / Royal Microscopical Society et al. | 1997
- 39
-
Strain determination in mismatched semiconductor heterostructures by the digital analysis of lattice imagesRosenauer, A. / Remmele, T. / Fischer, U. / Foerster, A. / Royal Microscopical Society et al. | 1997
- 43
-
New intermediate defect configuration in Si studied by in situ HREM irradiationFedina, L. / Gutakovskii, A. / Aseev, A. / Van Landuyt, J. / Royal Microscopical Society et al. | 1997
- 47
-
A study of interdiffusion and germanium segregation in low-pressure chemical vapour deposition of SiGe/Si quantum wellsWalther, T. / Humphreys, C. J. / Cullis, A. G. / Robbins, D. J. / Royal Microscopical Society et al. | 1997
- 55
-
In-situ HREM irradiation study of point defect clustering in strained Ge~xSi~1~-~x/(001)Si heterostructureFedina, L. / Lebedev, O. / Van Tendeloo, G. / Van Landuyt, J. / Royal Microscopical Society et al. | 1997
- 59
-
Structural characterisation of MnSb/GaAs and MnSb/Si heterostructures grown by hot-wall epitaxyTatsuoka, H. / Brown, P. D. / Xin, Y. / Isaji, K. / Royal Microscopical Society et al. | 1997
- 63
-
Atomic modelling and HREM-imaging of dislocations associated with steps at Si/Si(001) vicinal interfacesBelov, A. Y. / Conrad, D. / Scheerschmidt, K. / Goesele, U. / Royal Microscopical Society et al. | 1997
- 67
-
The characterisation of ultrathin doping layers in semiconductors using high-angle annular dark-field imagingLiu, C. P. / Boothroyd, C. B. / Brown, P. D. / Humphreys, C. J. / Royal Microscopical Society et al. | 1997
- 71
-
Electron diffraction from cross-sectional semiconductor heterointerfaces using subnanometer electron probesRadefeld, A. / Lakner, H. / Royal Microscopical Society et al. | 1997
- 75
-
The use of electron holography for composition profiling of semiconductor heterostructuresMidgley, P. A. / Barnard, J. / Cherns, D. / Royal Microscopical Society et al. | 1997
- 79
-
Imaging dislocation kinks, their motion and pinning in SiSpence, J. C. H. / Kolar, H. R. / Alexander, H. / Royal Microscopical Society et al. | 1997
- 91
-
Analytical expression for the kink profilePolyakov, M. E. / Royal Microscopical Society et al. | 1997
- 95
-
Domain boundaries in epitaxial GaN grown on {111}B GaAs and GaP by molecular beam epitaxyXin, Y. / Brown, P. D. / Cheng, T. S. / Foxon, C. T. / Royal Microscopical Society et al. | 1997
- 99
-
Basal and non-basal dislocations in deformed aluminium nitrideFeregotto, V. / George, A. / Michel, J. P. / Royal Microscopical Society et al. | 1997
- 103
-
Structure of the GaAs/InP interface obtained by wafer fusionPatriarche, G. / Jeannes, F. / Oudar, J. L. / Glas, F. / Royal Microscopical Society et al. | 1997
- 107
-
Influence of light illumination on the rosette microstructure in indented GaAs and the photoplastic effectKoubaiti, S. / Couderc, J. J. / Levade, C. / Vanderschaeve, G. / Royal Microscopical Society et al. | 1997
- 111
-
Dislocation behaviour in strained layer interfacesGoodhew, P. J. / MacPherson, G. / Royal Microscopical Society et al. | 1997
- 121
-
A mechanism for "double half dislocation loops" nucleation in low misfit epitaxial Ge~xSi~1~-~x on SiHirsch, P. B. / Royal Microscopical Society et al. | 1997
- 127
-
Controlling misfit dislocation generation in strained layer epitaxy by point defect injectionStirpe, M. B. / Perovic, D. D. / Lafontaine, H. L. / Goldberg, R. D. / Royal Microscopical Society et al. | 1997
- 131
-
Defect distribution in compositionally graded epitaxial SiGe layers on Si substratesLyutovich, K. / Ernst, F. / Banhart, F. / Silier, I. / Royal Microscopical Society et al. | 1997
- 135
-
On the growth of high quality relaxed Si~1~-~xGe~x layers on Si by vapour phase epitaxyPidduck, A. J. / Robbins, D. J. / Wallis, D. / Williams, G. M. / Royal Microscopical Society et al. | 1997
- 145
-
Relaxation of strained epitaxial layers by dislocation rotation, reaction and generation during annealingBeanland, R. / Lourenco, M. A. / Homewood, K. P. / Royal Microscopical Society et al. | 1997
- 149
-
Correlation between defects, residual strain and morphology in continuously graded InGaAs/GaAs buffersLazzarini, L. / Ferrari, C. / Gennari, S. / Bosacchi, A. / Royal Microscopical Society et al. | 1997
- 153
-
The stacking faults in GaSb/(001)GaAs heterostructureRocher, A. M. / Royal Microscopical Society et al. | 1997
- 157
-
Stacking fault trapezoids, stacking fault tubes and stacking fault tetrahedra in ZnSe/GaAs(001) pseudomorphic epilayersFung, K. K. / Wang, N. / Sou, I. K. / Royal Microscopical Society et al. | 1997
- 161
-
Global plastic relaxation of strained-layer superlattices with non-compensated strainsPatriarche, G. / Rao, E. V. K. / Ougazzaden, A. / Glas, F. / Royal Microscopical Society et al. | 1997
- 165
-
Critical thickness of quantum-well structures: modified Matthews-Blakeslee formula and experimental support gathered by means of synchroton x-ray reflection topographyMoeck, P. / Tanner, B. K. / Lacey, G. / Whitehouse, C. R. / Royal Microscopical Society et al. | 1997
- 169
-
Crack interactions in tensile-strained epilayersMurray, R. T. / Kiely, C. J. / Hopkinson, M. / Royal Microscopical Society et al. | 1997
- 173
-
Structural characterisation of GaN layers: influence of polarity and strain releaseRouviere, J.-L. / Arlery, M. / Bourret, A. / Royal Microscopical Society et al. | 1997
- 183
-
Polarity study by CBED of GaN films grown on (0001)~S~i 6H-SiCVermaut, P. / Ruterana, P. / Nouet, G. / Salvador, A. / Royal Microscopical Society et al. | 1997
- 187
-
The analysis of nanopipes and inversion domains in GaN thin filmsCherns, D. / Young, W. T. / Saunders, M. A. / Ponce, F. A. / Royal Microscopical Society et al. | 1997
- 191
-
HREM study of the {1010} inversion domains in GaN grown on (0001) sapphire substratesPotin, V. / Ruterana, P. / Nouet, G. / Salvador, A. / Royal Microscopical Society et al. | 1997
- 195
-
Growth of GaN layers on nitrided GaAs/Si and GaAs/SIMOX composite substrates by OMVPEHu, C. / Nuhfer, N. T. / Mahajan, S. / Yang, J. W. / Royal Microscopical Society et al. | 1997
- 199
-
Crystal defects and optical properties of GaN grown with different techniques: stacking fault related luminescenceSalviati, G. / Zanotti-Fregonara, C. / Albrecht, M. / Christiansen, S. / Royal Microscopical Society et al. | 1997
- 205
-
Heteroepitaxy of cubic GaN: influence of interface structureTrampert, A. / Brandt, O. / Yang, H. / Yang, B. / Royal Microscopical Society et al. | 1997
- 209
-
Highly spatially resolved electron energy loss spectroscopy in the bandgap regimeBangert, U. / Harvey, A. / Keyse, R. / Freundt, D. / Royal Microscopical Society et al. | 1997
- 213
-
Developing a methodology for the electron energy-loss spectroscopy of defects in GaNNatusch, M. K. H. / Botton, G. A. / Humphreys, C. J. / Royal Microscopical Society et al. | 1997
- 217
-
Probing the effect of defects on band structure in GaNTricker, D. M. / Natusch, M. K. H. / Boothroyd, C. B. / Xin, Y. / Royal Microscopical Society et al. | 1997
- 221
-
STEM characterisation of MOVPE-grown (In, Ga) N quantum wellsBrockt, G. / Mendorf, C. / Radefeld, A. / Scholz, F. / Royal Microscopical Society et al. | 1997
- 227
-
TEM characterisation of GaN grown on sapphirePecz, B. / Di Forte-Poisson, M. A. / Toth, L. / Radnoczi, G. / Royal Microscopical Society et al. | 1997
- 231
-
On the microstructure of GaN buffer layers grown at low temperatures on (0001) sapphireSelke, H. / Einfeldt, S. / Birkle, U. / Hommel, D. / Royal Microscopical Society et al. | 1997
- 235
-
Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphireMohammed, A. / Trager-Cowan, C. / Middleton, P. G. / O'Donnell, K. P. / Royal Microscopical Society et al. | 1997
- 239
-
Mechanisms of strain-induced surface ripple formation and dislocation multiplication in Si~xGe~1~-~x thin filmsJesson, D. E. / Chen, K. M. / Pennycook, S. J. / Thundat, T. / Royal Microscopical Society et al. | 1997
- 247
-
Kinetic critical thickness for morphological instability in GeSi/Si strained layer epitaxyBahierathan, B. / Perovic, D. D. / Lafontaine, H. / Royal Microscopical Society et al. | 1997
- 251
-
Decomposition analysis of Ga~xIn~1~-~xAs~yP~1~-~y heterostructures by STEMMendorf, C. / Brockt, G. / Liu, Q. / Schulze, F. / Royal Microscopical Society et al. | 1997
- 257
-
Investigations of ordering in AlGaInPDunbar, A. / Hall, S. / Halsall, M. / Bangert, U. / Royal Microscopical Society et al. | 1997
- 261
-
Structural characteristics of highly ordered (GaIn)PJiang, J. C. / Schaper, A. K. / Spika, Z. / Stolz, W. / Royal Microscopical Society et al. | 1997
- 265
-
The effect of substrate misorientation on atomic ordering in Ga~0~.~5~2In~0~.~4~8P epilayers grown on GaAs (001) substrates by gas-source MBEMeenakarn, C. / Staton-Bevan, A. E. / Dawson, M. D. / Duggan, G. / Royal Microscopical Society et al. | 1997
- 269
-
Study of the structural and optical properties of ordered domains in GaInP alloysNasi, L. / Fermi, F. / Ferrari, C. / Francesio, L. / Royal Microscopical Society et al. | 1997
- 275
-
TEM and TED studies of order-induced GaInP heterostructures grown by organometallic vapour phase epitaxyKim, J. H. / Seong, T.-Y. / Chun, Y. S. / Stringfellow, G. B. / Royal Microscopical Society et al. | 1997
- 279
-
TED, TEM and AFM studies comparing atomic ordering in InAs~ySb~1~-~y layers grown by MOVPE and MBESeong, T. Y. / Booker, G. R. / Norman, A. G. / Harris, P. J. F. / Royal Microscopical Society et al. | 1997
- 283
-
Twinning of As precipitates in LT-GaAsDieker, C. / Ruvimov, S. / Sohn, H. / Washburn, J. / Royal Microscopical Society et al. | 1997
- 287
-
Features of excess arsenic precipitation in LT-GaAs delta-doped with indiumBert, N. A. / Chaldyshev, V. V. / Musikhin, Y. G. / Werner, P. / Royal Microscopical Society et al. | 1997
- 291
-
Transmission electron microscopy, x-ray diffraction and photoluminescence study of InGaAs/GaAs heterostructuresKatcki, J. / Reginski, K. / Bugajski, M. / Adamczewska, J. / Royal Microscopical Society et al. | 1997
- 295
-
Transmission electron microscopy investigation of FeAs precipitates in GaAs/AlGaAs heterostructuresKatcki, J. / Shiojiri, M. / Isshiki, T. / Nishio, K. / Royal Microscopical Society et al. | 1997
- 299
-
Characterisation of InPSb layers on different substrates (InAs or GaSb)Mendorf, C. / Brockt, G. / Behres, A. / Von Eichel-Streiber, C. / Royal Microscopical Society et al. | 1997
- 303
-
TEM and HRXRD study of high strain InAlGaAs heterolayersMusikhin, Y. G. / Bert, N. A. / Faleev, N. N. / Royal Microscopical Society et al. | 1997
- 307
-
A TEM study of Cu-In-Se thin films grown by molecular beam epitaxyLin, S. B. / Gu, G. L. / Tseng, B. H. / Royal Microscopical Society et al. | 1997
- 311
-
Structural investigations of epitaxial CdMgSe/InAs(001) heterostructuresWalter, T. / Gerthsen, D. / Litz, T. / Waag, A. / Royal Microscopical Society et al. | 1997
- 315
-
Transmission electron microscopy investigations of an epitaxial beryllium-chalcogenide-based superlatticeWalter, T. / Rosenauer, A. / Gerthsen, D. / Fischer, F. / Royal Microscopical Society et al. | 1997
- 319
-
Growth of SiC layers on off-axis 4H-SiC substratesPecz, B. / Toth, L. / Radnoczi, G. / Hallin, C. / Royal Microscopical Society et al. | 1997
- 323
-
Self-organisation and defect mechanisms in heteroepitaxial growthStrunk, H. P. / Albrecht, M. / Christiansen, S. / Dorsch, W. / Royal Microscopical Society et al. | 1997
- 335
-
Self-organisation processes in InSb quantum dots grown on InP(001) by ALMBEFerrer, J. C. / Peiro, F. / Cornet, A. / Morante, J. R. / Royal Microscopical Society et al. | 1997
- 339
-
TEM and PL studies of self-assembling quantum dotsJin-Phillipp, N. Y. / Zundel, M. K. / Phillipp, F. / Eberl, K. / Royal Microscopical Society et al. | 1997
- 343
-
Strain-induced vertical ordering effects of islands in LPCVD-grown Si~1~-~xGe~x/Si-bilayer structures on Si(001)Tillmann, K. / Rahmati, B. / Trinkaus, H. / Jaeger, W. / Royal Microscopical Society et al. | 1997
- 349
-
TEM assessment of the growth mode and strain state of capped InSb dots grown on InP (001) substratesFerrer, J. C. / Peiro, F. / Cornet, A. / Morante, J. R. / Royal Microscopical Society et al. | 1997
- 353
-
Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matricesNorman, A. G. / Mason, N. J. / Fisher, M. J. / Richardson, J. / Royal Microscopical Society et al. | 1997
- 357
-
Microstructual characterisation of CdSe quantum dots prepared by various routesNayak, R. R. / Galsworthy, J. R. / Dobson, P. J. / Hutchison, J. L. / Royal Microscopical Society et al. | 1997
- 361
-
Application of the 113 weak beam imaging technique to the investigation of strain-induced InAs islands grown on InP and GaAs(001) by MBEPonchet, A. / Lacombe, D. / Royal Microscopical Society et al. | 1997
- 365
-
Impact of the threading dislocations and residual stress on InAs islands grown on a (001) GaAs-on-Si pseudo-substrate relative to growth on standard GaAsLacombe, D. / Ponchet, A. / Gerard, J. M. / Royal Microscopical Society et al. | 1997
- 369
-
Microstructure study of GaAs quantum wire superlatticeMatsuhata, H. / Wang, X.-L. / Ogura, M. / Royal Microscopical Society et al. | 1997
- 373
-
Electron microscopy characterization of low-dimensional semiconductor structures grown on V-grooved substratesGustafsson, A. / Biasiol, G. / Dwir, B. / Reinhardt, F. / Royal Microscopical Society et al. | 1997
- 381
-
Quantitative analysis of Al~1~-~xGa~xAs heterostructures using EELSLeifer, K. / Buffat, P. A. / Royal Microscopical Society et al. | 1997
- 385
-
Orientation dependent growth of TmAs wires in GaAs grown by MBEWright, A. C. / Bennett, M. R. / Singer, K. E. / Royal Microscopical Society et al. | 1997
- 389
-
TEM and HREM structural studies of non-lithographically-produced CdS nanowiresHutchison, J. L. / Routkevitch, D. / Albu-Yaron, A. / Moskovitz, M. / Royal Microscopical Society et al. | 1997
- 393
-
TEM studies of processed Si device materialsVanhellemont, J. / Bender, H. / Van Landuyt, J. / Royal Microscopical Society et al. | 1997
- 403
-
Two- and three-dimensional characterisation of advanced LOCOS isolation using transmission electron microscopyBeanland, R. / Bazley, D. J. / Jones, S. K. / Scaife, B. / Royal Microscopical Society et al. | 1997
- 407
-
Improved epitaxial quality following etch damage removal on plasma etched silicon surfacesBonar, J. M. / Schiz, J. / Ashburn, P. / Royal Microscopical Society et al. | 1997
- 411
-
The effects of fluorine on the epitaxial regrowth of arsenic-doped amorphous silicon and polysilicon and of chlorine on the epitaxial regrowth of arsenic-doped polysiliconMarsh, C. D. / Moiseiwitsch, N. E. / Booker, G. R. / Ashburn, P. / Royal Microscopical Society et al. | 1997
- 415
-
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogenFrabboni, S. / Gambetta, F. / Tonini, R. / Balboni, R. / Royal Microscopical Society et al. | 1997
- 419
-
TEM characterisation of carbon ion implantation into epitaxial Si~1~-~xGe~xRomano-Rodriguez, A. / Perez-Rodriguez, A. / Serre, C. / Calvo-Barrio, L. / Royal Microscopical Society et al. | 1997
- 423
-
Polycrystalline silicon grain structure in VLSI devicesLindsay, R. / Chapman, J. N. / Craven, A. J. / McBain, D. / Royal Microscopical Society et al. | 1997
- 427
-
Structural and electronic properties of partially crystallised siliconBrown, P. D. / Smith, J. P. / Eccleston, W. / Humphreys, C. J. / Royal Microscopical Society et al. | 1997
- 431
-
Microstructure study of pure hydrogen RF-sputtered microcrystallized silicon thin filmsGourbilleau, F. / Achiq, A. / Vermaut, P. / Voivenel, P. / Royal Microscopical Society et al. | 1997
- 435
-
The effect of doping and formation conditions on the microstructure of porous siliconWakefield, G. / Hutchison, J. L. / Dobson, P. J. / Royal Microscopical Society et al. | 1997
- 439
-
Temperature mapping of polysilicon microheaters using Raman micro-spectroscopyBowden, M. / Gardiner, D. J. / Parr, A. A. / Carline, R. T. / Royal Microscopical Society et al. | 1997
- 443
-
Development of a mechanical polysilicon layer for surface machined microelectromechanical systems using TEM, SEM, and Raman spectroscopyKing, D. O. / Ward, M. C. / Cullis, A. G. / Gardiner, D. / Royal Microscopical Society et al. | 1997
- 447
-
Dislocation structure in interfaces of bonded hydrophobic silicon wafers: experiment and molecular dynamicsReiche, M. / Scheerschmidt, K. / Conrad, D. / Scholz, R. / Royal Microscopical Society et al. | 1997
- 451
-
Interfaces of CVD diamond films on silicon (001)Wittorf, D. / Jaeger, W. / Jia, C. L. / Urban, K. / Royal Microscopical Society et al. | 1997
- 457
-
Synchrotron x-ray reticulography: a versatile new technique for mapping misorientations in single crystalsLang, A. R. / Makepeace, A. P. W. / Royal Microscopical Society et al. | 1997
- 461
-
The use of transmitted color and interference fringes for TEM sample preparation of siliconMcCaffrey, J. P. / Royal Microscopical Society et al. | 1997
- 465
-
Cross-sectional transmission electron microscopy and focused ion beam study of advanced silicon devicesBender, H. / Roussel, P. / Royal Microscopical Society et al. | 1997
- 469
-
Preparing TEM sections by FIB: stress relief to straighten warping membranesWalker, J. F. / Royal Microscopical Society et al. | 1997
- 473
-
Surface damage of semiconductor TEM samples prepared by focused ion beamsWalker, J. F. / Broom, R. F. / Royal Microscopical Society et al. | 1997
- 479
-
Ion energy effect on surface amorphisation of semiconductor crystalsBarna, A. / Toth, L. / Pecz, B. / Radnoczi, G. / Royal Microscopical Society et al. | 1997
- 483
-
The effects of surface relaxation and ion thinning on -doped semiconductor cross-sectionsLiu, C. P. / Brown, P. D. / Boothroyd, C. B. / Humphreys, C. J. / Royal Microscopical Society et al. | 1997
- 487
-
Practical epitaxial silicide technologies for ULSI applicationsTung, R. T. / Inoue, K. / Royal Microscopical Society et al. | 1997
- 501
-
In situ TEM study of the evolution of CoSi~2 precipitates during annealing and ion irradiationPalard, M. / Ruault, M.-O. / Bernas, H. / Strobel, M. / Royal Microscopical Society et al. | 1997
- 507
-
Heteroepitaxial Si/ErSi~2/Si structures grown in high vacuumTravlos, A. / Flouda, E. / Aloupogiannis, A. / Salamouras, N. / Royal Microscopical Society et al. | 1997
- 511
-
Radiation enhanced diffusion of ion implanted Fe in Si (100) observed in ion beam synthesis of -FeSi~2Maeda, Y. / Fujita, T. / Umezawa, K. / Miyake, K. / Royal Microscopical Society et al. | 1997
- 515
-
Application of image filtering to semiconductor structuresFlaitz, P. L. / Domenicucci, A. / Royal Microscopical Society et al. | 1997
- 519
-
Tungsten and tungsten nitride Schottky contacts to 4H-SiCPecz, B. / Sulyok, A. / Radnoczi, G. / Noblanc, O. / Royal Microscopical Society et al. | 1997
- 523
-
Distribution of Fe and extended defects in Fe-implanted InPFrigeri, C. / Carnera, A. / Fraboni, B. / Gasparotto, A. / Royal Microscopical Society et al. | 1997
- 527
-
Influence of doping on the native acceptors of gallium antimonideHidalgo, P. / Mendez, B. / Piqueras, J. / Dutta, P. S. / Royal Microscopical Society et al. | 1997
- 531
-
Effect of high implantation temperatures on defect formation in 6H-SiCSuvorova, A. A. / Lebedev, O. I. / Suvorov, A. V. / Usov, I. O. / Royal Microscopical Society et al. | 1997
- 535
-
X-ray topography of single crystal zinc germanium phosphideSaker, M. K. / Keir, A. M. / Vere, A. W. / Taylor, L. L. / Royal Microscopical Society et al. | 1997
- 539
-
Mechanisms of breakdown in semi-insulating GaAs detectors under high reverse bias conditions studied by EBIC and OBICMazzer, M. / Cola, A. / Vasanelli, L. / De Vittorio, M. / Royal Microscopical Society et al. | 1997
- 543
-
The impact of structural non-uniformity on the operation of (Al~yGa~1~-~y)~xIn~1~-~xP quantum well lasers at high strainMogensen, P. C. / Hall, S. A. / Bangert, U. / Dawson, P. / Royal Microscopical Society et al. | 1997
- 547
-
EBIC and TEM investigations of laser heterostructures grown on linearly-graded and step-graded buffer layersRomero, M. J. / Pacheco, F. J. / Gonzalez, D. / Rojas, T. C. / Royal Microscopical Society et al. | 1997
- 551
-
TEM observation of degraded InGaAsP MQW laser diodesMatsuda, T. / Namegaya, T. / Kasukawa, A. / Ikegami, Y. / Royal Microscopical Society et al. | 1997
- 557
-
Atomic processes at the laser front facet during laser operationRechenberg, I. / Richter, U. / Klein, A. / Hoeppner, W. / Royal Microscopical Society et al. | 1997
- 561
-
Application of secondary electron dopant contrast imaging to InP/InGaAsP laser structuresSealy, C. P. / Castell, M. R. / Reynolds, C. L. / Wilshaw, P. R. / Royal Microscopical Society et al. | 1997
- 565
-
Degradation of electron-beam-pumped Zn~1~-~xCd~xSe/ZnSe GRINSCH blue-green lasersBonard, J.-M. / Ganiere, J.-D. / Herve, D. / Vanzetti, L. / Royal Microscopical Society et al. | 1997
- 569
-
Degradation dynamics of II-VI (ZnCdSe) quantum well materials using confocal photoluminescence microscopyFewer, D. T. / Jordan, C. / Hewlett, S. J. / McCabe, E. M. / Royal Microscopical Society et al. | 1997
- 573
-
Antiphase boundaries in GaAs/Ge solar cellsHardingham, C. / Holt, D. B. / Lazzarini, L. / Mazzer, M. / Royal Microscopical Society et al. | 1997
- 579
-
EBIC and cathodoluminescence studies of grain boundary and interface phenomena in CdTe/CdS solar cellsGalloway, S. A. / Edwards, P. R. / Durose, K. / Royal Microscopical Society et al. | 1997
- 583
-
A study of the activation of CdTe/CdS thin film solar cells using OBICEdwards, P. R. / Galloway, S. A. / Wilshaw, P. R. / Durose, K. / Royal Microscopical Society et al. | 1997
- 587
-
REBIC studies of electrical barriers in varistor ZnOHalls, D. / Holt, D. B. / Leach, C. / Russell, J. D. / Royal Microscopical Society et al. | 1997
- 593
-
Electron microscopy analysis of the RGTO technique for high sensitivity gas sensor developmentDieguez, A. / Romano-Rodriguez, A. / Morante, J. R. / Nelli, P. / Royal Microscopical Society et al. | 1997
- 597
-
Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studiesGoldfarb, I. / Owen, J. H. G. / Hayden, P. T. / Miki, K. / Royal Microscopical Society et al. | 1997
- 601
-
Measurement of silicon wafer roughness by atomic force microscopy: an interlaboratory comparisonPidduck, A. J. / Smout, A. B. J. / Wagner, P. / Suhren, M. / Royal Microscopical Society et al. | 1997
- 607
-
AFM investigations of the influence of the doping process on the structure of LPCVD-silicon filmsGold, H. / Lutz, J. / Kuchar, F. / Pippan, M. / Royal Microscopical Society et al. | 1997
- 611
-
Structural studies of InGaAsP/InP-based lasers using cross-sectional atomic-force microscopy (XAFM) and selective etchingKallstenius, T. / Smith, U. / Stoltz, B. / Royal Microscopical Society et al. | 1997
- 615
-
A k-space transport analysis of the BEEM spectroscopy of Au/Si Schottky barriersHohenester, U. / Kocevar, P. / De Andres, P. / Flores, F. / Royal Microscopical Society et al. | 1997
- 619
-
A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductorsVan Meirhaeghe, R. L. / Vanalme, G. M. / Goubert, L. / Cardon, F. / Royal Microscopical Society et al. | 1997
- 623
-
Carrier recombination at defects in silicon: the effect of transition metals and hydrogen passivationWilshaw, P. R. / Blood, A. M. / Braban, C. F. / Royal Microscopical Society et al. | 1997
- 629
-
EBIC studies of the electrical barriers in striated ZnS platelets exhibiting the anomalous photovoltaic effectHolt, D. B. / Brada, Y. / Royal Microscopical Society et al. | 1997
- 635
-
A reassessment of Te-doped GaAsFrigeri, C. / Weyher, J. L. / Jimenez, J. / Martin, P. / Royal Microscopical Society et al. | 1997
- 639
-
REBIC studies of grain boundaries in II-VI compoundsHolt, D. B. / Raza, B. / Wojcik, A. / Royal Microscopical Society et al. | 1997
- 643
-
Dependence of electron-hole generation function on EBIC contrast of defectsRomero, M. J. / Araujo, D. / Garcia, R. / Royal Microscopical Society et al. | 1997
- 647
-
Cathodoluminescence and EBIC of 2D junction laser structures on patterned (311)A GaAs substratesNorman, C. E. / North, A. J. / Burroughes, J. H. / Burke, T. / Royal Microscopical Society et al. | 1997
- 651
-
Distinction of the recombination properties and identification of Y luminescence at glide dislocations in CdTeSchreiber, J. / Uniewski, H. / Hildebrandt, S. / Hoering, L. / Royal Microscopical Society et al. | 1997
- 655
-
The role of scanning cathodoluminescence in the development of MOVPE growth of GaAs/AlGaAs V-groove quantum wiresWilliams, G. M. / Steer, M. / Cullis, A. G. / Whitehouse, C. R. / Royal Microscopical Society et al. | 1997
- 661
-
Cathodoluminescence studies of striated ZnS platelets and related II-VI crystalsBrada, Y. / Holt, D. B. / Mardix, S. / Royal Microscopical Society et al. | 1997
- 665
-
Cathodoluminescence study of ZnMgSSe/GaAs heterostructuresLiu, Q. / Meinert, A. / Kubalek, E. / Kalisch, H. / Royal Microscopical Society et al. | 1997
- 669
-
Electric field dependence of the lateral cathodoluminescence intensity and electron-beam induced current distribution in a GaAs-AlAs single quantum wellJahn, U. / Menniger, J. / Kostial, H. / Hey, R. / Royal Microscopical Society et al. | 1997
- 673
-
SEM-CL of high quality polycrystalline CVD and high pressure synthetic diamondSharp, S. J. / Collins, A. T. / Royal Microscopical Society et al. | 1997
- 677
-
Recombination properties of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures: a cathodoluminescence studyFossaert, N. / Dassonneville, S. / Sieber, B. / Lorriaux, J. L. / Royal Microscopical Society et al. | 1997
- 681
-
Low temperature spectral cathodoluminescence study of InGaAs/InP quantum dot-like and quantum wire-like structuresZanotti-Fregonara, C. / Rigo, C. / Stano, A. / Salviati, G. / Royal Microscopical Society et al. | 1997
- 685
-
Advanced scanning near-field optical microscopy of semiconducting materials and devicesCramer, R. M. / Heiderhoff, R. / Selbeck, J. / Balk, L. J. / Royal Microscopical Society et al. | 1997
- 689
-
Non-destructive measurement of bulk inhomogeneities in silicon using the scanning infra-red microscopeMule'Stagno, L. / Bazzali, A. / Olmo, M. / Toeroek, P. / Royal Microscopical Society et al. | 1997
-
Micro-characterisation of Pt-silicides prepared on (100) siliconJin, S. / Bender, H. / Donaton, R. A. / Maex, K. / Royal Microscopical Society et al. | 1997