Wetting Properties and Interfacial Energies in Liquid Phase Growth of -SiC (English)
- New search for: Yakimova, R.
- New search for: Syvaejaervi, M.
- New search for: Janzen, E.
- New search for: Yakimova, R.
- New search for: Syvaejaervi, M.
- New search for: Janzen, E.
- New search for: Pensl, G.
In:
Silicon carbide, III-nitrides and related materials
1
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159-162
;
1998
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ISBN:
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ISSN:
- Conference paper / Print
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Title:Wetting Properties and Interfacial Energies in Liquid Phase Growth of -SiC
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Contributors:
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Conference:International conference; 7th, Silicon carbide, III-nitrides and related materials ; 1997 ; Stockholm
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Published in:Silicon carbide, III-nitrides and related materials , 1 ; 159-162MATERIALS SCIENCE FORUM ; 264/268, 1 ; 159-162
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Publisher:
- New search for: Trans tech publications
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Publication date:1998-01-01
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Size:4 pages
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Remarks:Described as proceedings. Also known as ISCIII-N'97
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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SiC Seeded Boule GrowthTsvetkov, V. / Glass, R. C. / Henshall, D. / Asbury, D. et al. | 1998
- 9
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High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor TransportAugustine, G. / Hobgood, H. M. / Balakrishna, V. / Dunne, G. T. et al. | 1998
- 13
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Sublimation Growth of 50mm Diameter SiC WafersPowell, A. R. / Wang, S. / Fechko, G. / Brandes, G. R. et al. | 1998
- 17
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Experimental Investigation of 4H-SiC Bulk Crystal GrowthChourou, K. / Anikin, M. / Bluet, J. M. / Lauer, V. et al. | 1998
- 21
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Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation MethodOkamoto, A. / Sugiyama, N. / Tani, T. / Kamiya, N. et al. | 1998
- 25
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Influence of the Growth Direction and Polytype on the Stacking Fault Generation in -SiCTakahashi, J. / Ohtani, N. / Katsuno, M. / Shinoyama, S. et al. | 1998
- 29
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X-Ray Section Topographic Investigation of the Growth Process of SiC CrystalsMilita, S. / Madar, R. / Baruchel, J. / Mazuelas, A. et al. | 1998
- 33
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Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk CrystalsMueller, S. G. / Eckstein, R. / Hartung, W. / Hofmann, D. et al. | 1998
- 37
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The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC GrowthHeydemann, V. D. / Rohrer, G. S. / Sanchez, E. K. / Skowronski, M. et al. | 1998
- 41
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Defect Formation Mechanism of Bulk SiCSasaki, M. / Nishio, Y. / Nishino, S. / Nakashima, S. et al. | 1998
- 45
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Enlargement of SiC Crystals: Defect Formation at the InterfacesAnikin, M. / Pons, M. / Chourou, K. / Chaix, O. et al. | 1998
- 49
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Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiCOhtani, N. / Katsuno, M. / Takahashi, J. / Yashiro, H. et al. | 1998
- 53
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Optically Transparent 6H-Silicon CarbideBakin, A. S. / Dorozhkin, S. I. / Zubrilov, A. S. / Kuznetsov, N. I. et al. | 1998
- 57
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Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental VerificationMueller, S. G. / Eckstein, R. / Hofmann, D. / Kadinski, L. et al. | 1998
- 61
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Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum ContainerEgorov, Y. E. / Galyukov, A. O. / Gurevich, S. G. / Makarov, Y. N. et al. | 1998
- 65
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A Coupled Finite Element Model for the Sublimation Growth of SiCRaaback, P. / Nieminen, R. / Yakimova, R. / Tuominen, M. et al. | 1998
- 69
-
Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk GrowthMueller, M. / Bickermann, M. / Hofmann, D. / Weber, A.-D. et al. | 1998
- 73
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Dissolution and Growth of Silicon Carbide Crystals in Melt-SolutionsIvantsov, V. / Dmitriev, V. et al. | 1998
- 77
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Sublimation Growth of Bulk -SiC Crystals on (100) and (111) -SiC SubstratesJayatirtha, H. N. / Spencer, M. G. et al. | 1998
- 83
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SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE ReactorBurk, A. A. / O'Loughlin, M. J. / Mani, S. S. et al. | 1998
- 89
-
Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage ApplicationsRupp, R. / Wiedenhofer, A. / Friedrichs, P. / Peters, D. et al. | 1998
- 97
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Growth and Characterisation of SiC Power Device MaterialKordina, O. / Henry, A. / Janzen, E. / Carter, C. H. et al. | 1998
- 103
-
Growth and Characterisation of Thick SiC Epilayers by High Temperature CVDEllison, A. / Kimoto, T. / Ivanov, I. G. / Wahab, Q. et al. | 1998
- 107
-
Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor DepositionKordina, O. / Irvine, K. / Sumakeris, J. / Kong, H. S. et al. | 1998
- 111
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Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle DependenceYamamoto, T. / Kimoto, T. / Matsunami, H. et al. | 1998
- 115
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Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiCRowland, L. B. / Burk, A. A. / Brandt, C. D. et al. | 1998
- 119
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Boron Compensation of 6H Silicon CarbideMazzola, M. S. / Saddow, S. E. / Schoener, A. et al. | 1998
- 123
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CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal PlaneHallin, C. / Ellison, A. / Ivanov, I. G. / Henry, A. et al. | 1998
- 127
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Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD ReactorWischmeyer, F. / Leidich, D. / Niemann, E. et al. | 1998
- 131
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Growth of 4H and 6H SiC in Trenches and Around Stripe MesasNordell, N. / Karlsson, S. / Konstantinov, A. O. et al. | 1998
- 135
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Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial GrowthChristiansen, K. / Dalibor, T. / Helbig, R. / Christiansen, S. et al. | 1998
- 139
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Epitaxial Growth of SiC on -SiC Using Si~2Cl~6+C~3H~8+H~2 SystemNishino, S. / Miyanagi, T. / Nishio, Y. et al. | 1998
- 143
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High Growth Rate of -SiC by Sublimation EpitaxySyvaejaervi, M. / Yakimova, R. / MacMillan, M. F. / Tuominen, M. et al. | 1998
- 147
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The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy TechniqueKakanakova-Georgieva, A. / MacMillan, M. F. / Nishino, S. / Yakimova, R. et al. | 1998
- 151
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Domain Occurrence in SiC Epitaxial Layers Grown by SublimationTuominen, M. / Yakimova, R. / Kakanakova-Georgieva, A. / MacMillan, M. P. et al. | 1998
- 155
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Epitaxy of High Quality SiC Layers by CSTYoshida, T. / Nishio, Y. / Lilov, S. K. / Nishino, S. et al. | 1998
- 159
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Wetting Properties and Interfacial Energies in Liquid Phase Growth of -SiCYakimova, R. / Syvaejaervi, M. / Janzen, E. et al. | 1998
- 163
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High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase EpitaxyRendakova, S. / Ivantsov, V. / Dmitriev, V. et al. | 1998
- 167
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Thick Film SiC Epitaxy for `Filling Up' MicropipesKhlebnikov, I. / Madangarli, V. P. / Khan, M. A. / Sudarshan, T. S. et al. | 1998
- 171
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A New Radiation Heated 4 Inch LPCVD System for -SiC HeteroepitaxyMoeller, H. / Legner, W. / Kroetz, G. et al. | 1998
- 175
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Epitaxial Growth of 3C-SiC without Carbonization Process Using 1,3-DisilabutaneLee, K.-W. / Yu, K.-S. / Bae, J. W. / Kim, Y. et al. | 1998
- 179
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Growth and Characterization of SiC Films on Large-Area Si Wafers by APCVD - Temperature DependenceWu, C.-H. / Fleischman, A. J. / Zorman, C. A. / Mehregany, M. et al. | 1998
- 183
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CVD Growth Mechanism of 3C-SiC on Si SubstratesIshida, Y. / Takahashi, T. / Okumura, H. / Yoshida, S. et al. | 1998
- 187
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Growth of Epitaxial Cubic SiC Thin Films Using Single Source PrecursorsBoo, J.-H. / Lee, S.-B. / Ustin, S. A. / Ho, W. et al. | 1998
- 191
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Crystallinity of 3C-SiC Films Grown on Si SubstratesYagi, K. / Nagasawa, H. et al. | 1998
- 195
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Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) SubstratesShim, H. W. / Kim, K. C. / Seo, Y. H. / Nahm, K. S. et al. | 1998
- 199
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The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film in Si SubstrateSeo, Y. H. / Kim, K. C. / Shim, H. W. / Nahm, K. S. et al. | 1998
- 203
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Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEMTakaoka, T. / Saito, H. / Igari, Y. / Kusunoki, I. et al. | 1998
- 207
-
Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si SubstratesTakahashi, T. / Ishida, Y. / Okumura, H. / Yoshida, S. et al. | 1998
- 211
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Effect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVDShimizu, H. / Shiga, M. et al. | 1998
- 215
-
Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in SiliconLindner, J. K. N. / Reiber, W. / Stritzker, B. et al. | 1998
- 219
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Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) SiliconScholz, R. / Goesele, U. / Wischmeyer, F. / Niemann, E. et al. | 1998
- 223
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Fabrication of 3C-SiC on SiO~2 Structures Using Wafer Bonding TechniquesZorman, C. A. / Vinod, K. N. / Yasseen, A. / Mehregany, M. et al. | 1998
- 227
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Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of -SiC on Si(100) SubstrateFerro, G. / Vincent, H. / Monteil, Y. / Chaussende, D. et al. | 1998
- 231
-
Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon SubstratesMitchell, S. / Spencer, M. G. / Wongchotigul, K. et al. | 1998
- 235
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Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary SystemHatayama, T. / Fuyuki, T. / Matsunami, H. et al. | 1998
- 239
-
Heteroepitaxial Growth of SiC on Si by Gas Source MBE with SilacyclobutaneChen, J. / Steckl, A. J. / Loboda, M. J. et al. | 1998
- 243
-
Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVDUchida, M. / Deguchi, M. / Takahashi, K. / Kitabatake, M. et al. | 1998
- 247
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Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBESchmitt, J. / Troffer, T. / Christiansen, K. / Christiansen, S. et al. | 1998
- 251
-
Growth of SiC Layers on (111) Si by Solid Source Molecular Beam EpitaxyPezoldt, J. / Stauden, T. / Cimalla, V. / Ecke, G. et al. | 1998
- 255
-
Improved Epitaxy of Cubic SiC Thin Films on Si(111) by Solid-Source MBEFissel, A. / Pfennighaus, K. / Kaiser, U. / Kraeusslich, J. et al. | 1998
- 259
-
Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBEKaiser, U. / Brown, P. D. / Chuvilin, A. / Khodos, I. et al. | 1998
- 265
-
Electronic Properties of SiC Polytypes and HeterostructuresBechstedt, F. et al. | 1998
- 271
-
Band Structure Interpretation of the Optical Transitions between Low-Lying Conduction Bands in n-Type Doped SiC PolytypesLambrecht, W. R. L. / Limpijumnong, S. / Rashkeev, S. N. / Segall, B. et al. | 1998
- 275
-
Calculated Density of States and Carrier Concentration in 4H- and 6H-SiCPersson, C. / Lindefelt, U. et al. | 1998
- 279
-
Theoretical Studies on Defects in SiCDeak, P. / Gali, A. / Miro, J. / Guiterrez, R. et al. | 1998
- 283
-
An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking FaultsZywietz, A. / Kaeckell, P. / Furthmueller, J. / Bechstedt, F. et al. | 1998
- 287
-
Calculation of Nonlinear Optical Susceptibilities for Different Polytypes of Silicon CarbideAdolph, B. / Bechstedt, F. et al. | 1998
- 291
-
Comparative Monte Carlo Study of Electron Transport in 3C, 4H and 6H Silicon CarbideMickevicius, R. / Zhao, J. H. et al. | 1998
- 295
-
Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiCKinoshita, T. / Itoh, K. M. / Muto, J. / Schadt, M. et al. | 1998
- 299
-
The Effects of Interfacial Dipoles on the Properties of SiC-Group III-Nitride Hetero-StructuresLucovsky, G. / Yang, H. / Luepke, G. et al. | 1998
- 303
-
Pressure-Dependent Dynamical and Dielectric Properties of GaN and AlNKarch, K. / Wagner, J.-M. / Siegle, H. / Thomsen, C. et al. | 1998
- 303
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Pressure-Dependent Dynamical and Dielectric Properties of GaN and AINKarch, K. / Wagner, J.-M. / Siegle, H. / Thomsen, C. et al. | 1998
- 307
-
Theoretical and Experimental Study of the Lattice-Dynamical Properties of Cubic GaNSterner, H. / Schewiola, A. / Karch, K. / Pavone, P. et al. | 1998
- 311
-
Electronic States of BC~2N Heterodiamond (111) SuperlatticesTateyama, Y. / Kusakabe, K. / Ogitsu, T. / Tsuneyuki, S. et al. | 1998
- 315
-
From Precursor Atoms Towards Hetero-Phases: Strain-Dynamics Induced Carbon-Rich Si~1~-~xC~x PhasesMasri, P. / Moreaud, N. / Calas, J. / Averous, M. et al. | 1998
- 321
-
Large Unit Cell Superstructures on Hexagonal SiC-Surfaces Studied by LEED, AES and STMStarke, U. / Franke, M. / Bernhardt, J. / Schardt, J. et al. | 1998
- 327
-
Surface Reconstructions of 6H-SiC(0001) and Surface-Structure-Controlled Epitaxial GrowthKitabatake, M. et al. | 1998
- 331
-
Electronic and Atomic Structure of the C-Terminated 6H-SiC SurfaceHollering, M. / Mattern, B. / Maier, F. / Ley, L. et al. | 1998
- 335
-
Deposition of Cs on Graphitized 4H-SiC SurfacesVan Elsbergen, V. / Nienhaus, H. / Moench, W. et al. | 1998
- 339
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Theory of Si-Rich SiC Surfaces: Consequences for Epitaxial GrowthFurthmueller, J. / Kaeckell, P. / Bechstedt, F. / Fissel, A. et al. | 1998
- 343
-
Polarity Dependent Step Bunching and Structure of Hexagonal SiC SurfacesSchardt, J. / Bernhardt, J. / Franke, M. / Starke, U. et al. | 1998
- 347
-
Collective Surface Excitations in 3C-SiC(100)Balster, T. / Polyakov, V. M. / Tautz, F. S. / Ibach, H. et al. | 1998
- 351
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FTIR-ATR Analysis of SiC(0001) and SiC(0001) SurfacesTsuchida, H. / Kamata, I. / Izumi, K. et al. | 1998
- 355
-
Polytype and Surface Characterization of Silicon Carbide Thin FilmsSchroeter, B. / Kreuzberg, M. / Fissel, A. / Pfennighaus, K. et al. | 1998
- 359
-
Characterization of Mechanically Polished Surfaces of Single Crystalline 6H-SiCKanaya, M. / Yashiro, H. / Ohtani, N. / Katsuno, M. et al. | 1998
- 363
-
AFM Study of In Situ Etching of 4H and 6H SiC SubstratesKarlsson, S. / Nordell, N. et al. | 1998
- 367
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Surface Morphology Improvement of SiC Epitaxy by Sacrificial OxidationAnthony, C. J. / Pidduck, A. J. / Uren, M. J. et al. | 1998
- 371
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The Formation of Super-Dislocation/Micropipe Complexes in 6H-SiCGiocondi, J. / Rohrer, G. S. / Skowronski, M. / Balakrishna, V. et al. | 1998
- 375
-
High Resolution Photoemission Study of the 6H-SiC/SiO~2 InterfaceMattern, B. / Bassler, M. / Pensl, G. / Ley, L. et al. | 1998
- 379
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Combined Ab Initio Total Energy Density Functional Calculations and Scanning Tunneling Microscopy Experiments of the -SiC(001 c(4x2) SurfaceDouillard, L. / Semond, F. / Aristov, V. Y. / Soukiassian, P. et al. | 1998
- 383
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Angle-Resolved Photoemission Study of the -SiC(100)-(2x1)-SurfaceHuesken, H. / Schroeter, B. / Richter, W. / Kaeckell, P. et al. | 1998
- 387
-
Self-Organized One-Dimensional Si Atomic Chains on Cubic Silicon Carbide SurfaceSemond, F. / Aristov, V. Y. / Douillard, L. / Fauchoux, O. et al. | 1998
- 391
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High Resolution Photoemission Spectroscopy Using Synchrotron Radiation Study of the SiO~2/-SiC(100)3x2 Interface CompositionDunham, D. / Soukiassian, P. / Denlinger, J. D. / Tonner, B. P. et al. | 1998
- 395
-
Raman Investigation of Stress Relaxation at the 3C-SiC/Si InterfaceBluet, J. M. / Falkovsky, L. A. / Planes, N. / Camassel, J. et al. | 1998
- 399
-
Extended Defects in SiC and GaN SemiconductorsPirouz, P. et al. | 1998
- 409
-
Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (0001) Carbon FacesStoemenos, J. / Di Cioccio, L. / Papaioannou, V. / David, D. et al. | 1998
- 413
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Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiCPersson, P. O. A. / Wahab, Q. / Hultman, L. / Nordell, N. et al. | 1998
- 417
-
The Origin of Triangular Surface Defects in 4H-SiC CVD EpilayersZhou, W. L. / Pirouz, P. / Powell, J. A. et al. | 1998
- 421
-
Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single CrystalsPowell, J. A. / Larkin, D. J. / Trunek, A. J. et al. | 1998
- 425
-
Equilibrium Growth Morphologies of SiC PolytypesMueller, S. G. / Eckstein, R. / Grimbergen, R. F. P. / Hofmann, D. et al. | 1998
- 429
-
Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single CrystalsSi, W. / Dudley, M. / Glass, R. C. / Tsvetkov, V. et al. | 1998
- 433
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Structural Characterization of SiC Crystals Grown by Physical Vapor TransportSanchez, E. K. / Heydemann, V. D. / Rohrer, G. S. / Skowronski, M. et al. | 1998
- 437
-
Investigation of Polymorphism and Estimation of Lattice Constants of SiC Epilayers by Four Circle X-Ray DiffractionRomanus, H. / Teichert, G. / Spiess, L. et al. | 1998
- 441
-
Site Identification of 6H-SiC Using RBS/Channeling TechniqueSatoh, M. / Okamoto, K. / Iwata, Y. / Kuriyama, K. et al. | 1998
- 445
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Structural Characterization of 3C-SiC Epitaxially Grown on Si-On-InsulatorPapaioannou, V. / Pavlidou, E. / Stoemenos, J. / Reichert, W. et al. | 1998
- 449
-
Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman ScatteringHarima, H. / Hosoda, T. / Nakashima, S. et al. | 1998
- 455
-
Optical Properties of Silicon Carbide: Some Recent DevelopmentsDevaty, R. P. / Choyke, W. J. / Sridhara, S. G. / Clemen, L. L. et al. | 1998
- 461
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Boron Four Particle Acceptor Bound Exciton Complex in 4H SiCSridhara, S. G. / Nizhner, D. G. / Devaty, R. P. / Choyke, W. J. et al. | 1998
- 465
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Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiCSridhara, S. G. / Clemen, L. L. / Nizhner, D. G. / Devaty, R. P. et al. | 1998
- 469
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Some Aspects of the Photoluminescence and Raman Spectroscopy of (1010)- and (1120)- Oriented 4H and 6H Silicon CarbideIvanov, I. G. / Henry, A. / Hallin, C. / Egilsson, T. et al. | 1998
- 473
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The Neutral Silicon Vacancy in 6H and 4H SiCSoerman, E. / Chen, W. M. / Son, N. T. / Hallin, C. et al. | 1998
- 477
-
Bound Exciton Recombination in Electron Irradiated 4H-SiCEgilsson, T. / Henry, A. / Ivanov, I. G. / Lindstroem, J. L. et al. | 1998
- 481
-
Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and MappingTajima, M. / Kumagaya, Y. / Nakata, T. / Inoue, M. et al. | 1998
- 485
-
Time Resolved PL Study of Multi Bound Excitons in 3C SiCBergman, J. P. / Janzen, E. / Sridhara, S. G. / Choyke, W. J. et al. | 1998
- 489
-
Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial StressIvanov, I. G. / Lindefelt, U. / Henry, A. / Egilsson, T. et al. | 1998
- 493
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D~1~1 Revisited in an Modern Guise - 6H and 4H SiCSridhara, S. G. / Nizhner, D. G. / Devaty, R. P. / Choyke, W. J. et al. | 1998
- 497
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Near Band-Gap Emission in V-Implanted and Annealed 4H-SiCHenry, A. / Egilsson, T. / Ivanov, I. G. / Harris, C. I. et al. | 1998
- 501
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Photoluminescence and Backscattering Characterization of 6H SiC Implanted with Erbium and Oxygen IonsKozanecki, A. / Jeynes, C. / Sealy, B. J. / Jantsch, W. et al. | 1998
- 505
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Luminescence Properties of Er Implanted Polycrystalline 3C SiCUekusa, S.-I. / Awahara, K. / Kumagai, M. et al. | 1998
- 509
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Measurement of High Field Electron Transport in Silicon CarbideKhan, I. A. / Cooper, J. A. et al. | 1998
- 513
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Ionization Rates and Critical Fields in 4H SiC Junction DevicesKonstantinov, A. O. / Wahab, Q. / Nordell, N. / Lindefelt, U. et al. | 1998
- 517
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Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine TeslaRutsch, G. / Devaty, R. P. / Langer, D. W. / Rowland, L. B. et al. | 1998
- 521
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Electrical Conductivity of Single-Crystalline Bulk 6H-SiC and Epitaxial Layers of AlN in the Temperature Range 300-2300 KAvrov, D. D. / Bakin, A. S. / Dorozhkin, S. I. / Lebedev, A. O. et al. | 1998
- 525
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Minority Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay TechniqueZhou, W. / Khlebnikov, I. / Sudarshan, T. S. / Capano, M. A. et al. | 1998
- 529
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Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport ParametersGrivickas, V. / Linnros, J. / Galeckas, A. et al. | 1998
- 533
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Evaluation of Auger Recombination Rate in 4H-SiCGaleckas, A. / Linnros, J. / Grivickas, V. / Lindefelt, U. et al. | 1998
- 537
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Ground States of the Ionized Isoelectronic Ti Acceptor in SiCDalibor, T. / Pensl, G. / Nordell, N. / Schoener, A. et al. | 1998
- 541
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Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiCAchtziger, N. / Grillenberger, J. / Witthuhn, W. et al. | 1998
- 545
-
Deep Levels in SiC:V by High Temperature Transport MeasurementsMitchel, W. C. / Perrin, R. / Goldstein, J. / Roth, M. et al. | 1998
- 549
-
Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient SpectroscopyScott, M. B. / Scofield, J. D. / Yeo, Y. K. / Hengehold, R. L. et al. | 1998
- 553
-
Oxygen-Related Defect Centers in 4H Silicon CarbideDalibor, T. / Pensl, G. / Yamamoto, T. / Kimoto, T. et al. | 1998
- 557
-
Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiCTroffer, T. / Pensl, G. / Schoener, A. / Henry, A. et al. | 1998
- 561
-
Observation of Metastable Defect in Electron Irradiated 6H-SiCHemmingsson, C. G. / Son, N. T. / Kordina, O. / Lindstroem, J. L. et al. | 1998
- 565
-
Electrically Active Defects in n-Type 4H- and 6H-SiCDoyle, J. P. / Aboelfotoh, M. O. / Svensson, B. G. et al. | 1998
- 569
-
Phonon Spectrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance SpectroscopySmith, S. R. / Evwaraye, A. O. / Mitchel, W. C. et al. | 1998
- 573
-
Electrical and Transmission Electron Microscopy Characterisation of 4H-SiC Homoepitaxial Mesa DiodesCzerwinski, A. / Ratajczak, J. / Katcki, J. / Bakowski, A. et al. | 1998
- 577
-
High-Temperature Annealing of 6H-SiC Single Crystals and the Site-Competition ProcessesVlaskina, S. I. / Lee, Y. P. / Rodionov, V. E. / Kaminska, M. et al. | 1998
- 581
-
Electronic Structure of Acceptors in Silicon CarbideBaranov, P. G. et al. | 1998
- 587
-
High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiCSchmidt, J. / Matsumoto, T. / Poluektov, O. G. / Van Duijn-Arnold, A. et al. | 1998
- 591
-
On the Identification of an Al Related Deep Centre in 4H-SiC -Self-Compensation in SiC?Meyer, B. K. / Hofstaetter, A. / Baranov, P. G. et al. | 1998
- 595
-
X-Band ENDOR of Boron and Beryllium Acceptors in Silicon CarbideHofstaetter, A. / Meyer, B. K. / Scharmann, A. / Baranov, P. G. et al. | 1998
- 599
-
Optically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiCSon, N. T. / Wagner, M. / Soerman, E. / Chen, W. M. et al. | 1998
- 603
-
Chromium in 4H and 6H SiC: Photoluminescence and Zeeman StudiesSon, N. T. / Ellison, A. / MacMillan, M. F. / Kordina, O. et al. | 1998
- 607
-
Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide CrystalsBaranov, P. G. / Ilyin, I. V. / Mokhov, E. N. et al. | 1998
- 611
-
Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin ResonanceKawasuso, A. / Itoh, H. / Cha, D. / Okada, S. et al. | 1998
- 615
-
ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-ElectronsCha, D. / Itoh, H. / Morishita, N. / Kawasuso, A. et al. | 1998
- 619
-
Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas SupplyIzumi, T. / Kobayashi, K. / Hirosawa, E. / Kawahara, T. et al. | 1998
- 623
-
Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiCMueller, S. G. / Eckstein, R. / Fricke, J. / Hofmann, D. et al. | 1998
- 627
-
Deformation of Monocrystalline 6H-SiCSamant, A. V. / Zhou, W. L. / Pirouz, P. et al. | 1998
- 631
-
Measurement of the Thermal Conductivity of Thin -SiC Films between 80 K and 600 KJansen, E. / Ziermann, R. / Obermeier, E. / Kroetz, G. et al. | 1998
- 635
-
Spatial Uniformity of the Mechanical Properties of 3C-SiC Films Grown on 4-Inch Si Wafers as a Function of Film Growth ConditionsChandra, K. / Zorman, C. A. / Mehregany, M. et al. | 1998
- 641
-
The Measurement of the Thickness of Thin SiC Layers on SiliconCimalla, V. / Scheiner, J. / Ecke, G. / Friedrich, M. et al. | 1998
- 645
-
Thickness Contour Mapping of SiC Epi-Films on SiC SubstratesMacMillan, M. F. / Narfgren, P. O. / Henry, A. / Janzen, E. et al. | 1998
- 649
-
Infrared Reflectance of Extremely Thin AlN Epi-Films Deposited on SiC SubstratesMacMillan, M. F. / Forsberg, U. / Petsson, P. O. A. / Hultman, L. et al. | 1998
- 653
-
Cathodoluminescence of Defect Regions in SiC Epi-FilmsMacMillan, M. F. / Hultman, L. / Hallin, C. / Ivanov, I. G. et al. | 1998
- 657
-
Contactless Measurement of the Thermal Conductivity of Thin SiC LayersRohmfeld, S. / Hundhausen, M. / Ley, L. et al. | 1998
- 661
-
Cross-Sectional Micro-Raman Spectroscopy: A Tool for Structural Investigations of Thin Polytypic SiC LayersWerninghaus, T. / Zahn, D. R. T. / Yankov, R. A. / Muecklich, A. et al. | 1998
- 665
-
A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS CapacitorsMadangarli, V. P. / Sudarshan, T. S. et al. | 1998
- 669
-
Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si SubstratesHagiwara, C. / Itoh, K. M. / Muto, J. / Nagasawa, H. et al. | 1998
- 675
-
Conductivity Control of SiC by In-Situ Doping and Ion ImplantationKimoto, T. / Itoh, A. / Inoue, N. / Takemura, O. et al. | 1998
- 681
-
Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition EpitaxyFrank, T. / Troffer, T. / Pensl, G. / Nordell, N. et al. | 1998
- 685
-
Coimplantation Effects on the Electrical Properties of Boron and Aluminum Acceptors in 4H-SiCItoh, H. / Troffer, T. / Pensl, G. et al. | 1998
- 689
-
Electrical Characterization of P-Type 6H-SiC Layers Created by C and Al Co-ImplantationTone, K. / Weiner, S. R. / Zhao, J. H. et al. | 1998
- 693
-
Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical TechniquesFeng, Z. C. / Ferguson, I. / Stall, R. A. / Li, K. et al. | 1998
- 697
-
Energy Order Effect of Aluminum Multiple Implantation in 6H-SiCOttaviani, L. / Morvan, E. / Locatelli, M. L. / Godignon, P. et al. | 1998
- 701
-
Implantation of Al and B Acceptors into Alpha-SiC and pn Junction DiodesTakemura, O. / Kimoto, T. / Matsunami, H. / Nakata, T. et al. | 1998
- 705
-
Electrical Activation of B Implant in 6H-SiCValcheva, E. / Paskova, T. / Ivanov, I. S. / Yakimova, R. et al. | 1998
- 709
-
Post-Implantation Annealing of Aluminum in 6H-SiCOttaviani, L. / Planson, D. / Locatelli, M. L. / Chante, J. P. et al. | 1998
- 713
-
The Characterization of SiC Hot-Implanted with Ga^+Tanaka, Y. / Kobayashi, N. / Hasegawa, M. / Yoshida, S. et al. | 1998
- 717
-
Ion Implantation Doping in SiC and its Device ApplicationsRao, M. V. / Gardner, J. / Edwards, A. / Papanicolaou, N. A. et al. | 1998
- 721
-
Hot-Implantation of Phosphorus Ions into 6H-SiCAbe, K. / Ohshima, T. / Itoh, H. / Aoki, Y. et al. | 1998
- 725
-
Raman, Low Temperature Photoluminescence and Transport Investigation of N-Implanted 6H-SiCThomas, P. / Contreras, S. / Juillaguet, S. / Robert, J. L. et al. | 1998
- 729
-
Investigation of Ion-Implantation Induced Damage in 6H-SiC by RBS/C and PASWirth, H. / Anwand, W. / Brauer, G. / Voelskow, M. et al. | 1998
- 733
-
Analysis of Aluminum Ion Implantation Damage into 6H-SiC EpilayersMestres, N. / Ben El Mekki, M. / Campos, F. J. / Pascual, J. et al. | 1998
- 737
-
Stoichiometric Disturbances in Ion Implanted Silicon CarbideMorvan, E. / Monserrat, J. / Rebollo, J. / Flores, D. et al. | 1998
- 741
-
6H-SiC Crystailinity Behaviour upon B Implantation Studied by Raman ScatteringPaskova, T. / Valcheva, E. / Ivanov, I. G. / Yakimova, R. et al. | 1998
- 745
-
Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron AnnihilationOhshima, T. / Uedono, A. / Itoh, H. / Abe, K. et al. | 1998
- 749
-
Effect of Hot Isostatic Press Annealing for Ion-Implanted Silicon CarbideHirabayashi, Y. / Furuya, M. / Hirai, K. / Takano, H. et al. | 1998
- 753
-
Ion Beam Synthesis: A Novel Method of Producing (SiC)~1~-~x(AlN)~x LayersYankov, R. A. / Fukarek, W. / Voelskow, M. / Pezoldt, J. et al. | 1998
- 757
-
A Computational Model for the Formation of (SiC)~1~-~x(AlN)~x Structures by Hot, High-Dose N^+ and Al^+ Co-Implants in 6H-SiCTruschin, Y. V. / Yankov, R. A. / Kharlamov, V. S. / Kulikov, D. V. et al. | 1998
- 761
-
Deuterium Incorporation in Acceptor Doped Epitaxial Layers of 6H-SiCLinnarsson, M. K. / Janson, M. / Schoener, A. / Nordell, N. et al. | 1998
- 765
-
Silicon Carbide on Insulator Formation by the Smart CUT[R] ProcessDi Cioccio, L. / Le Tiec, Y. / Jaussaud, C. / Hugonnard-Bruyere, E. et al. | 1998
- 771
-
Delamination of Thin Layers in H^+ Implanted Silicon CarbideHara, T. / Kakizaki, Y. / Tanaka, H. / Inoue, M. et al. | 1998
- 775
-
Metal Disilicide Contacts to 6H-SiCKriz, J. / Scholz, T. / Gottfried, K. / Leibelt, J. et al. | 1998
- 779
-
Formation of Tungsten Ohmic Contact on n-Type 6H-SiC by Pulsed Laser ProcessesNakashima, K. / Eryu, O. / Kume, T. / Nakata, T. et al. | 1998
- 783
-
Laser Alloying for Ohmic Contacts on SiC at Room TemperatureOta, Y. / Ikeda, Y. / Kitabatake, M. et al. | 1998
- 787
-
Thermostable Ohmic Contacts on p-Type SiCKassamakova, L. / Kakanakov, R. / Nordell, N. / Savage, S. et al. | 1998
- 791
-
Ohmic Contacts to p-Type SiC with Improved Thermal StabilityLiu, S. / Scofield, J. D. et al. | 1998
- 795
-
A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400C in AirGottfried, K. / Fritsche, H. / Kriz, J. / Leibelt, J. et al. | 1998
- 799
-
Phase Formation Sequence of Nickel Silicides from Rapid Thermal Annealing of Ni on 4H-SiCMadsen, L. D. / Svedberg, E. B. / Radamson, H. H. / Hallin, C. et al. | 1998
- 805
-
Thermal Stability of Sputtered TiN as Metal Gate on 4H-SiCDanielsson, E. / Harris, C. I. / Zetterling, C.-M. / Oestling, M. et al. | 1998
- 809
-
Schottky Barrier Height in Metal-SiC Contact - New Approach to ModellingIvanov, P. A. / Ignat'ev, K. I. et al. | 1998
- 813
-
Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission MicroscopyIm, H.-J. / Kaczer, B. / Pelz, J. P. / Chen, J. et al. | 1998
- 817
-
Physical and Electrical Characterization of WN Schottky Contacts on 4H-SiCNoblanc, O. / Arnodo, C. / Cassette, S. / Brylinski, C. et al. | 1998
- 821
-
Sputter-Etching as a Surface Preparation Technique for Schottky ContactsKinouchi, S. / Sugimoto, H. / Tarui, Y. / Ohtsuka, K. et al. | 1998
- 825
-
Mechanism of Reactive Ion Etching of 6H-SiC in CHF~3/O~2 Gas MixturesSieber, N. / Ristein, J. / Ley, L. et al. | 1998
- 829
-
Fast and Anisotropic Reactive Ion Etching of 4H and 6H SiC in NF~3Saxena, V. / Steckl, A. J. et al. | 1998
- 833
-
Inductively Coupled Plasma Etching of SiC for Power Switching Device FabricationCao, L. / Li, B. / Zhao, J. H. et al. | 1998
- 837
-
Etching Kinetics of -SiC Single Crystals by Molten KOHKatsuno, M. / Ohtani, N. / Takahashi, J. / Yashiro, H. et al. | 1998
- 841
-
Deep States in SiO~2/p-Type 4H-SiC InterfaceYano, H. / Inoue, N. / Kimoto, T. / Matsunami, H. et al. | 1998
- 845
-
Effects of the Cooling-Off Condition on the Oxidation Process in 6H-SiCUeno, K. et al. | 1998
- 849
-
Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiCCampi, J. / Shi, Y. / Luo, Y. / Yan, F. et al. | 1998
- 853
-
Low Interface State Density Oxides on P-Type SiCLipkin, L. A. / Slater, D. B. / Palmour, J. W. et al. | 1998
- 857
-
Observation of Carbon Clusters at the 4H-SiC/SiO~2 InterfaceAfanas'ev, V. V. / Stesmans, A. / Harris, C. I. et al. | 1998
- 861
-
Interface State Density at Implanted 6H SiC/SiO~2 MOS StructuresBassler, M. / Afanas'ev, V. V. / Pensl, G. et al. | 1998
- 865
-
Electrical Properties and Reliability of Vapor Jet Deposited Oxide on SiCWang, X. W. / Takahashi, Y. / Ma, T. P. / Cui, G. J. et al. | 1998
- 869
-
Improving SiO~2 Grown on P-Type 4H-SiC by NO AnnealingLi, H. F. / Dimitrijev, S. / Harrison, H. B. / Sweatman, D. et al. | 1998
- 873
-
Rapid Anodic Oxidation of 6H-SiCKhlebnikov, Y. / Madangarli, V. P. / Khan, M. A. / Sudarshan, T. S. et al. | 1998
- 877
-
Comparison of SiO~2 and AIN as Gate Dielectric for SiC MOS StructuresZetterling, C.-M. / Oestling, M. / Harris, C. I. / Nordell, N. et al. | 1998
- 881
-
Metal-Nitride-Semiconductor Capacitors on 6H-SiCBerberich, S. / Godignon, P. / Millan, J. / Planson, D. et al. | 1998
- 885
-
Surface Micromachining of Polycrystalline SiC Deposited on SiO~2 by APCVDFleischman, A. J. / Wei, X. / Zorman, C. A. / Mehregany, M. et al. | 1998
- 889
-
Behavior of Polycrystalline SiC and Si Surface-Micromachined Lateral Resonant Structures at Elevated TemperaturesFleischman, A. J. / Roy, S. / Zorman, C. A. / Mehregany, M. et al. | 1998
- 895
-
Recent Advances in SiC Power DevicesCooper, J. A. / Melloch, M. R. / Woodall, J. M. / Spitz, J. et al. | 1998
- 901
-
Vital Issues for SiC Power DevicesHara, K. et al. | 1998
- 907
-
Silicon Carbide High Frequency DevicesWeitzel, C. E. et al. | 1998
- 913
-
Wide Dynamic Range RF Mixers Using Wide-Bandgap SemiconductorsFazi, C. / Neudeck, P. G. et al. | 1998
- 917
-
Electrothermal Simulation of 4H-SiC Power DevicesWright, N. G. / Morrison, D. J. / Johnson, C. M. / O'Neill, A. G. et al. | 1998
- 921
-
High-Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD LayersKimoto, T. / Wahab, Q. / Ellison, A. / Forsberg, U. et al. | 1998
- 925
-
6H-SiC Schottky Diode Edge Terminated Using Amorphous SiC by Sputtering MethodMatsumoto, K. / Chen, Y. / Kuzmik, J. / Nishino, S. et al. | 1998
- 929
-
Effect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier DiodesAlok, D. / Egloff, R. / Arnold, E. et al. | 1998
- 933
-
High Voltage Schottky Barrier Diodes on P-Type 4H and 6H-SiCRaghunathan, R. / Baliga, B. J. et al. | 1998
- 937
-
High Voltage 4H SiC Rectifiers Using Pt and Ni MetallizationSaxena, V. / Steckl, A. J. et al. | 1998
- 941
-
Medici Simulation of 6H-SiC Oxide Ramp Profile Schottky StructureBrezeanu, G. / Fernandez, J. / Millan, J. / Badila, M. et al. | 1998
- 945
-
A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiCSchoen, K. J. / Henning, J. P. / Woodall, J. M. / Cooper, J. A. et al. | 1998
- 949
-
Characterization of Power MESFETs on 4H-SiC Conductive and Semi-Insulating WafersNoblanc, O. / Amodo, C. / Chartier, E. / Brylinski, C. et al. | 1998
- 953
-
Silicon Carbide MESFET's for High-Power S-Band ApplicationsAllen, S. T. / Sadler, R. A. / Alcorn, T. S. / Sumakeris, J. et al. | 1998
- 957
-
Temperature Dependent Small- and Large-Signal Performance of 4H-SiC MESFET'sMoore, K. / Bhatnagar, M. / Weitzel, C. / Pond, L. et al. | 1998
- 961
-
Voltage Handling Capability and Microwave Performance of a 4H-SiC MESFET - A Simulation StudyKhemka, V. / Chow, T. P. / Gutmann, R. J. et al. | 1998
- 965
-
Evaluating the Three Common SiC Polytypes for MESFET ApplicationsRoschke, M. / Schwierz, F. / Paasch, G. / Schipanski, D. et al. | 1998
- 969
-
Effect of Device Temperature on RF FET Power DensityWeitzel, C. / Pond, L. / Moore, K. / Bhatnagar, M. et al. | 1998
- 973
-
Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power AmplificationSchwierz, F. / Roschke, M. / Liou, J. J. / Paasch, G. et al. | 1998
- 977
-
MESFETs and MOSFETs on Hydrogen-Terminated Diamond SurfacesTsugawa, K. / Hokazono, A. / Noda, H. / Kitatani, K. et al. | 1998
- 981
-
On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-EquilibriumSadeghi, M. / Liss, B. / Sveinbjoernsson, E. O. / Engstroem, O. et al. | 1998
- 985
-
Charge Pumping Measurements on SiC MOSFETsScozzie, C. J. / McGarrity, J. M. et al. | 1998
- 989
-
1400 V 4H-SiC Power MOSFETsAgarwal, A. K. / Casady, J. B. / Rowland, L. B. / Valek, W. F. et al. | 1998
- 993
-
High Voltage Planar 6H-SiC ACCUFETShenoy, P. M. / Baliga, B. J. et al. | 1998
- 997
-
Inversion Layer Mobility in SiC MOSFETsSridevan, S. / Baliga, B. J. et al. | 1998
- 1001
-
Dependence of Channel Mobility on the Surface Step Orientation in Planar 6H-SiC MOSFETsScharnholz, S. / Stein von Kamienski, E. / Goelz, A. / Leonhard, C. et al. | 1998
- 1005
-
High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiCSpitz, J. / Melloch, M. R. / Cooper, J. A. / Capano, M. A. et al. | 1998
- 1009
-
Impact Ionization in 6H-SiC MOSFET'sBano, E. / Ouisse, T. / Scharnholz, S. P. / Goelz, A. et al. | 1998
- 1013
-
Interface States and Field-Effect Mobility in 6H-SiC MOS TransistorsArnold, E. / Ramungul, N. / Chow, T. P. / Ghezzo, M. et al. | 1998
- 1017
-
Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-RaysYoshikawa, M. / Saitoh, K. / Ohshima, T. / Itoh, H. et al. | 1998
- 1021
-
Differences between Interfacial Bonding Chemistry at SiC-SiO~2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal OxidationLucovsky, G. / Niimi, H. et al. | 1998
- 1025
-
Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor DevicesKonstantinov, A. O. / Wahab, Q. / Hallin, C. / Harris, C. I. et al. | 1998
- 1029
-
6H-SiC MOS Capacitors on Sloped Surfaces: Realisation, Characterisation and Electrical ResultsLanois, F. / Planson, D. / Lassagne, P. / Raynaud, C. et al. | 1998
- 1033
-
Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity LevelsJoshi, R. P. / Fazi, C. et al. | 1998
- 1037
-
Nanosecond Risetime Pulse Characterization of SiC p^+n Junction Diode Breakdown and Switching PropertiesNeudeck, P. G. / Fazi, C. et al. | 1998
- 1041
-
Reverse Recovery and Avalanche Injection in High Voltage SiC PIN DiodesDomeij, M. / Breitholtz, B. / Linnros, J. / Oestling, M. et al. | 1998
- 1045
-
Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar DiodesOrtolland, S. / Locatelli, M. L. / Planson, D. / Chante, J. P. et al. | 1998
- 1049
-
Beryllium-Implanted 6H-SiC P^+N JunctionsRamungul, N. / Zheng, Y. / Patel, R. / Khemka, V. et al. | 1998
- 1053
-
Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-OnTornblad, O. / Galeckas, A. / Linnros, J. / Breitholtz, B. et al. | 1998
- 1057
-
SiC Merged p-n/Schottky Rectifiers for High Voltage ApplicationsHeld, R. / Kaminski, N. / Niemann, E. et al. | 1998
- 1061
-
Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiCDahlquist, F. / Zetterling, C.-M. / Oestling, M. / Rottner, K. et al. | 1998
- 1065
-
Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery WaveformRamungul, N. / Khemka, V. / Chow, T. P. / Ghezzo, M. et al. | 1998
- 1069
-
4H-SiC Gate Turn-Off (GTO) Thyristor DevelopmentCasady, J. B. / Agarwal, A. K. / Rowland, L. B. / Siergiej, R. R. et al. | 1998
- 1073
-
Punch-Through Behaviour of Wide Bandgap Materials (with Example in 6H-SiC) and its Benefit to JFETsKaminski, N. / Sheppard, S. T. / Niemann, E. et al. | 1998
- 1077
-
High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiCSheppard, S. T. / Lauer, V. / Wondrak, W. / Niemann, E. et al. | 1998
- 1081
-
SiC Surface Engineering for High Voltage JFET ApplicationsIvanov, P. A. / Kon'kov, O. I. / Konstantinov, A. O. / Panteleev, V. N. et al. | 1998
- 1085
-
Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction TransistorIwasaki, T. / Oono, T. / Asano, K. / Sugawara, Y. et al. | 1998
- 1089
-
Studies of the Ambient Dependent Inversion Capacitance of Catalytic Metal - Oxide - Silicon Carbide Devices Based on 6H- and 4H-SiC MaterialTobias, P. / Baranzahi, A. / Lundstroem, I. / Schoener, A. et al. | 1998
- 1093
-
SiC-Based Schottky Diode Gas SensorsHunter, G. W. / Neudeck, P. G. / Chen, L.-Y. / Knight, D. et al. | 1998
- 1097
-
Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky DiodesTobias, P. / Nakagomi, S. / Baranzahi, A. / Zhu, R. et al. | 1998
- 1101
-
High Temperature Piezoresistive -SiC-on-SOI Pressure Sensor for Combustion EnginesVon Berg, J. / Ziermann, R. / Reichert, W. / Obermeier, E. et al. | 1998
- 1107
-
Growth of Bulk GaN by Sublimation MethodSakai, S. / Sato, H. / Sugahara, T. / Naoi, Y. et al. | 1998
- 1111
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Growth and Characterization of Thin Films and Patterned Substrates of III-V Nitrides on SiC (0001) SubstratesDavis, R. F. / Bremser, M. D. / Nam, O. H. / Zheleva, T. et al. | 1998
- 1115
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Heteroepitaxy of Group III Nitrides for Device ApplicationsAmano, H. / Takeuchi, T. / Sakai, H. / Yamaguchi, S. et al. | 1998
- 1121
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HVPE GaN and AlGaN "Substrates" for HomoepitaxyMelnik, Y. / Nikolaev, A. / Stepanov, S. / Kikitina, I. et al. | 1998
- 1125
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Some Features of a Nucleation Layer Growth Process and its Influence on the GaN Epilayer QualityLundin, W. V. / Usikov, A. S. / Pushnyi, B. V. / Ushakov, U. I. et al. | 1998
- 1129
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Formation of GaN Nano-Column Structure by NitridationHashimoto, A. / Motiduki, T. / Wada, H. / Yamamoto, A. et al. | 1998
- 1133
-
Growth of High Quality AlN Epitaxial Films by Hot-Wall Chemical Vapour DepositionForsberg, U. / Birch, J. / MacMillan, M. F. / Persson, P. O. A. et al. | 1998
- 1137
-
Growth of Aluminum Nitride with Superior Optical and Morphological PropertiesWongchotigul, K. / Wilson, S. / Dickens, C. / Griffin, J. et al. | 1998
- 1141
-
Monomethylsilane as a New Dopant Precursor for u-Type GaN Grown by MOVPETomita, K. / Itoh, K. / Kachi, T. / Tadano, H. et al. | 1998
- 1145
-
Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AlN Buffer LayersStrittmatter, A. / Krost, A. / Schatke, K. / Bimberg, D. et al. | 1998
- 1149
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Optical Properties of GaN Films Grown on SiC/SiDevrajan, J. / Steckl, A. J. / Tran, C. A. / Stall, R. A. et al. | 1998
- 1153
-
Modeling of the Incorporation of Aluminum in Ga~1~-~xAl~xM (M=As or N) Alloys Grown by MOCVDRuffenach-Clur, S. / Briot, O. / Gil, B. / Aulombard, R.-L. et al. | 1998
- 1157
-
MOCVD Growth and Properties of InGaN/GaN Multi-Quantum WellsKeller, S. / Abare, A. C. / Minsky, M. S. / Wu, X. H. et al. | 1998
- 1161
-
MBE Growth of III-V Nitride Thin Films and Quantum Well StructuresJohnson, M. A. L. / El-Masry, N. A. / Cook, J. W. / Schetzina, J. F. et al. | 1998
- 1167
-
Surface Reconstruction and As Surfactant Effects on MBE-Grown GaN EpilayersOkumura, H. / Hamaguchi, H. / Ohta, K. / Feuillet, G. et al. | 1998
- 1173
-
An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaNSchoettker, B. / Kuehler, J. / As, D. J. / Schikora, D. et al. | 1998
- 1177
-
Elaboration of III-V Nitrides Quantum Dots in Molecular Beam EpitaxyDaudin, B. / Widmann, F. / Feuillet, G. / Samson, Y. et al. | 1998
- 1181
-
Growth of AlN on 6H- and 4H-SiC by Gas-Source Molecular Beam EpitaxyJaerrendahl, K. / Smith, S. A. / Zheleva, T. / Kern, R. S. et al. | 1998
- 1185
-
Molecular Beam Epitaxy Growth and Characterisation of GaAs~1~-~xN~x LayersThordson, J. V. / Zseboek, O. / Soedervall, U. / Andersson, T. G. et al. | 1998
- 1189
-
Effect of Elastic Strain on Growth of Ternary Group-III Nitride CompoundsKarpov, S. Y. / Makarov, Y. N. / Ramm, M. S. et al. | 1998
- 1193
-
Influence of Activated Nitrogen on Plasma Assisted MBE Growth of GaNBirkle, U. / Thomas, C. / Fehrer, M. / Einfeldt, S. et al. | 1998
- 1197
-
Surface Reconstruction and MBE Growth of Cubic GaN on (001) GaAs: A Total Energy StudyDa Silva, J. L. F. / Enderlein, R. / Scolfaro, L. M. R. / Leite, J. R. et al. | 1998
- 1201
-
Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular Beam EpitaxyHamdani, F. / Yeadon, M. / Smith, D. J. / Tang, H. et al. | 1998
- 1205
-
Low Temperature Growth of Gallium Nitride on Quartz and Sapphire SubstratesGoldys, E. M. / Paterson, M. J. / Zuo, H. Y. / Tansley, T. L. et al. | 1998
- 1209
-
STM Observation of Initial Nitridation Process of Ga on Si SubstratesNakada, Y. / Okumura, H. et al. | 1998
- 1213
-
Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN LayersYamamoto, A. / Shin-Ya, T. / Yamauchi, Y. / Hashimoto, A. et al. | 1998
- 1217
-
Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B SubstratesCheng, T. S. / Foxon, C. T. / Jeffs, N. J. / Dewsnip, D. J. et al. | 1998
- 1221
-
MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001) GaAs Prepared by Atomic-Hydrogen Treatment at High-TemperaturesYoshikawa, A. / Qin, Z. / Nagano, H. / Sugure, Y. et al. | 1998
- 1225
-
Reactive UHV Sputtering and Structural Characterization of Epitaxial AlN/6H-SiC(0001) Thin FilmsTungasmita, S. / Birch, J. / Hultman, L. / Janzen, E. et al. | 1998
- 1229
-
Magnetron Sputter Epitaxy of Gallium Nitride on (0001) SapphireWebb, J. B. / Northcott, D. / Charbonneau, S. / Yang, F. et al. | 1998
- 1235
-
Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam EpitaxyYang, B. / Brandt, O. / Zhang, Y. G. / Li, A. Z. et al. | 1998
- 1239
-
Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor DepositionZhou, W. L. / Pirouz, P. / Namavar, F. / Colter, P. C. et al. | 1998
- 1243
-
AlN Deposited by OMVPE and PLD Used as an Encapsulate for Ion Implanted SiCJones, K. A. / Xie, K. / Eckart, D. W. / Wood, M. C. et al. | 1998
- 1247
-
The Atomic Structure of Prismatic Planar Defects in GaN/AlN Grown over Silicon Carbide and Sapphire SubstratesNouet, G. / Vermaut, P. / Potin, V. / Ruterana, P. et al. | 1998
- 1251
-
Surface Defects in GaN and Al~xGa~1~-~xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase EpitaxyShin, M. / Polyakov, A. Y. / Skowronski, M. / Rohrer, G. S. et al. | 1998
- 1255
-
Structural Characterisation of GaN Layers on Sapphire Grown by MOCVDPecz, B. / Di Forte-Poisson, M. A. / Toth, L. / Radnoczi, G. et al. | 1998
- 1259
-
Excitonic Fine Structure and High Density Effects in GaNHoffmann, A. / Eckey, L. et al. | 1998
- 1265
-
Optical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic OrientationsGil, B. / Briot, O. / Aulombard, R.-L. / Nakamura, S. et al. | 1998
- 1271
-
Free Exciton Recombination in Tensile Strained GaN Grown on GaAsGoldhahn, R. / Shokhovets, S. / Romanus, H. / Cheng, T. S. et al. | 1998
- 1275
-
Exciton Dynamics in Homoepitaxial GaNMonemar, B. / Bergman, J. P. / Ivanov, I. G. / Baranowski, J. M. et al. | 1998
- 1279
-
Exciton Dynamics of Thick GaN Epilayers Deposited by MOVPE on Al~2O~3Allegre, J. / Lefebvre, P. / Camassel, J. / Beaumont, B. et al. | 1998
- 1283
-
Excitonic Quantum Efficiency of GaNGoeldner, A. / Eckey, L. / Hoffmann, A. / Gil, B. et al. | 1998
- 1287
-
Optical Absorption and Excitation Spectroscopy on GaInN/GaN Double Heterostructures and Quantum WellsHangleiter, A. / Heppel, S. / Off, J. / Sohmer, A. et al. | 1998
- 1291
-
Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural PropertiesHolst, J. / Strassburg, M. / Ledentsov, N. N. / Eckey, L. et al. | 1998
- 1295
-
Optical Properties of InGaN/GaN Multiple Quantum WellsAllegre, J. / Lefebvre, P. / Juillaguet, S. / Camassel, J. et al. | 1998
- 1299
-
Time-Resolved Spectroscopy on GaN/AlGaN Double Heterostructures and Quantum WellsIm, J. S. / Off, J. / Sohmer, A. / Scholz, F. et al. | 1998
- 1303
-
Non-Linear Exciton Spectroscopy of GaN/AlGaN Quantum WellsCingolani, R. / Coli, G. / Rinaldi, R. / Calcagnile, L. et al. | 1998
- 1307
-
Quantum Confinement Stark Effect in InGaN SQW Studied by Electric Field Modulated PL SpectraIyechika, Y. / Ono, Y. / Takada, T. et al. | 1998
- 1311
-
Optical Characterization of InGaN Layers and GaN/InGaN/GaN Double HeterostructuresGraber, A. / Averbeck, R. / Barnhoefer, U. / Riechert, H. et al. | 1998
- 1315
-
Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire SubstratesLundin, W. V. / Usikov, A. S. / Pushnyi, B. V. / Ushakov, U. I. et al. | 1998
- 1319
-
Room Temperature Photoluminescence Linewidth versus Material Quality of GaNMonemar, B. / Buyanova, I. A. / Bergman, J. P. / Amano, H. et al. | 1998
- 1323
-
Residual Donors in GaN Epitaxial Films - A Correlation of HALL Effect, SIMS and Photoluminescence DataTopf, M. / Kriegseis, W. / Burkhardt, W. / Dirnstorfer, I. et al. | 1998
- 1327
-
Are There any Shallow Acceptors in GaN?Monemar, B. et al. | 1998
- 1331
-
Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced PressureSukhoveyev, V. / Ivantsov, V. / Zubrilov, A. / Nikolaev, V. et al. | 1998
- 1335
-
Characterization of GaN Quantum Dots on AlGaN/SiC Substrate Using CathodoluminescencePetersson, A. / Tanaka, S. / Aoyagi, Y. / Samuelson, L. et al. | 1998
- 1339
-
Cathodoluminescence of Cubic GaN EpilayersWang, C. / As, D. J. / Schikora, D. / Schoettker, B. et al. | 1998
- 1343
-
Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epitaxy on SiC/Silicon (100) SubstratesGodlewski, M. / Ivanov, V. Y. / Bergman, J. P. / Monemar, B. et al. | 1998
- 1347
-
Analysis of Reflectivity Measurements for GaN Films Grown on GaAs: Influence of Surface Roughness and Interface LayersShokhovets, S. / Goldhahn, R. / Cimalla, V. / Cheng, T. S. et al. | 1998
- 1351
-
Effect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaNWieser, N. / Klose, M. / Scholz, F. / Off, J. et al. | 1998
- 1355
-
Characterization of GaN Epilayers Grown on Sapphire and SiC SubstratesWieser, N. / Klose, M. / Scholz, F. / Off, J. et al. | 1998
- 1359
-
Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence MicroscopeFeng, Z. C. / Schurman, M. / Tran, C. A. / Salagaj, T. et al. | 1998
- 1363
-
Raman Microprobe Measurement of Under-Damped LO-Phonon-Plasmon Coupled Mode in n-Type GaNHarima, H. / Sakashita, H. / Nakashima, S. et al. | 1998
- 1367
-
Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on (001) GaAsTabata, A. / Enderlein, R. / Lima, A. P. / Leite, J. R. et al. | 1998
- 1371
-
Surface Polariton Raman Spectroscopy in Cubic GaN Epitaxial LayersDavydov, V. Y. / Subashiev, A. V. / Cheng, T. S. / Foxon, C. T. et al. | 1998
- 1375
-
Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor DepositionGoetz, W. / Johnson, N. M. et al. | 1998
- 1381
-
Optical Admittance Spectroscopy of Deep Centers in Galliumnitride - Correlation with PhotoluminescenceKrtschil, A. / Fischer, P. / Witte, H. / Lisker, M. et al. | 1998
- 1385
-
A Two-Band Analysis of Electrical Transport in n-Type GaN EpilayersCheong, M. G. / Oh, K. S. / Suh, E.-K. / Lee, H. J. et al. | 1998
- 1389
-
Electrical Characterization of the AlN/Si(111) SystemOuisse, T. / Schenk, H. P. D. / Karmann, S. / Kaiser, U. et al. | 1998
- 1393
-
Electrical and Optical Properties of Highly Strained GaN EpilayersUsikov, A. S. / Lundin, W. V. / Pushnyi, B. V. / Shmidt, N. M. et al. | 1998
- 1397
-
Investigation of Thermal Annealing Processes on the Activation of Mg Acceptors and the Structural Quality of GaNSchineller, B. / Guttzeit, A. / Schoen, O. / Heuken, M. et al. | 1998
- 1403
-
Nanometre Scale Reactive Ion Etching of GaN EpilayersCoquillat, D. / Murad, S. K. / Ribayrol, A. / Smith, C. J. M. et al. | 1998
- 1407
-
Ti/Al and Cr/Al Ohmic Contacts to n-Type GaN Formed by Furnace AnnealingPapanicolaou, N. A. / Edwards, A. / Rao, M. V. / Mittereder, J. A. et al. | 1998
- 1411
-
Schottky Barrier Modification on n-GaN Using a Shallow p-Type ImplantMatocha, K. / Chow, T. P. / Lu, H. / Bhat, I. B. et al. | 1998
- 1415
-
Electrical Characteristics of In Situ Grown Lateral P^+N GaN Junction Diodes on Sapphire SubstratesFedison, J. B. / Chow, T. P. / Lu, H. / Bhat, I. B. et al. | 1998
- 1421
-
Nitride-Based Emitters on SiC SubstratesEdmond, J. / Bulman, G. / Kong, H. S. / Leonard, M. et al. | 1998
- 1425
-
Blue-U.V. Homojunction GaN LEDs Fabricated by MOVPEBeaumont, B. / Calle, F. / Haffouz, S. / Monroy, E. et al. | 1998
- 1429
-
Electroluminescence of GaN pn DiodesNagatomo, T. / Saitou, H. et al. | 1998
- 1433
-
Ultraviolet Stimulated Emission in GaN/AlGaN Multiple Quantum WellsCalcagnile, L. / Coli, G. / Rinaldi, R. / Cingolani, R. et al. | 1998