OMVPE of GaN using (N~3)~2Ga[(CH~2)~3N(CH~3)~2] (BAZIGA) in a cold wall reactor (English)
- New search for: Devi, A.
- New search for: Rogge, W.
- New search for: Fischer, R. A.
- New search for: Stowasser, F.
- New search for: Devi, A.
- New search for: Rogge, W.
- New search for: Fischer, R. A.
- New search for: Stowasser, F.
- New search for: Figueras, A.
In:
Chemical vapour deposition
8
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Pr8-589-Pr8-596
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1999
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ISBN:
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ISSN:
- Conference paper / Print
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Title:OMVPE of GaN using (N~3)~2Ga[(CH~2)~3N(CH~3)~2] (BAZIGA) in a cold wall reactor
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Contributors:Devi, A. ( author ) / Rogge, W. ( author ) / Fischer, R. A. ( author ) / Stowasser, F. ( author ) / Figueras, A.
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Conference:European conference; 12th, Chemical vapour deposition ; 1999 ; Sitges; Spain
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Published in:Chemical vapour deposition , 8 ; Pr8-589-Pr8-596JOURNAL DE PHYSIQUE 4 ; 9, 8 ; Pr8-589-Pr8-596
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Publisher:
- New search for: EDP Sciences
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Place of publication:Les Ulis
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Publication date:1999-01-01
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Size:Pr8-589-Pr8-596
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Remarks:Also known as EUROCVD 12
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- Pr8
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Plasma-enhanced chemical vapour deposition and structural characterization of amorphous chalcogenide filmsNagels, P. / Callaerts, R. / Mertens, R. et al. | 1999
- Pr8
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Remote plasma metalorganic chemical vapor deposition of GaN epilayersLosurdo, M. / Capezzuto, P. / Bruno, G. et al. | 1999
- Pr8
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Niobium and tantalum derivatives with bidentate nitrogen ligands as potential precursors to nitridesHubert-Pfalzgraf, L. G. / Decams, J.-M. / Daniele, S. et al. | 1999
- Pr8
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Phase and surface roughness evolution for as-deposited LPCVD silicon filmsCobianu, C. / Plugaru, R. / Nastase, N. / Nastase, S. et al. | 1999
- Pr8
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YSZ/CeO~2/YBCO heterostructures grown in-situ by pulsed injection CVDAbrutis, A. et al. | 1999
- Pr8
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In situ mass spetrometry during laser-induced chemical vapor deposition of silicon carbonitrideKorevaar, G. / Besling, W. / Goossens, A. / Schoonman, J. et al. | 1999
- Pr8
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Deposition of tungsten by plasma enhanced chemical vapour depositionBain, M. F. / Armstrong, B. M. / Gamble, H. S. et al. | 1999
- Pr8
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In situ real time ellipsometry for GaN remote plasma MOCVD technologyBruno, G. / Capezzuto, P. / Losurdo, M. et al. | 1999
- Pr8
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Structure of mixed-phase LPCVD silicon films as a function of operating conditionsDe Mauduit, B. / Bourgerette, C. / Paillard, V. / Puech, P. et al. | 1999
- Pr8
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Correlations between stress and microstructure into LPCVD silicon filmsTemple-Boyer, P. / De Mauduit, B. / Caussat, B. / Couderc, J. P. et al. | 1999
- Pr8
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Chemical and structural analysis of crystalline carbon nitride thin films prepared by electron cyclotron resonance plasma sputtering processTani, Y. / Aoi, Y. / Kamijo, E. et al. | 1999
- Pr8
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Application of Raman spectrometry for the characterization of complex oxide thin films grown by MOCVDGuettler, B. / Gorbenko, O. Y. / Novozhilov, M. A. / Samoilenkov, S. V. et al. | 1999
- Pr8
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Chemical vapor deposition of tin oxide from SnEt~4Bertrand, N. / Duverneuil, P. / Amjoud, M. / Maury, F. et al. | 1999
- Pr8
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Gas-phase FT-IR analysis and growth kinetics of Al~2O~3 in a LP-MOCVD reactor using new dialkylacetylacetonate precursorsBattiston, G. A. / Carta, G. / Gerbasi, R. / Porchia, M. et al. | 1999
- Pr8
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RPECVD thin silicon carbonitride films using hexamethyldisilazaneFainer, N. I. / Kosinova, M. L. / Rumyantsev, Y. M. / Kuznetsov, F. A. et al. | 1999
- Pr8
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RPECVD thin cadmium, copper and zinc sulphide filmsRumyantsev, Y. M. / Fainer, N. I. / Kosinova, M. L. / Ayupov, B. M. et al. | 1999
- Pr8
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Kinetics of laser-assisted single crystal growth of tungsten rodsLarsson, K. / Williams, K. / Maxwell, J. / Boman, M. et al. | 1999
- Pr8
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RMPECVD of silica films in large scale microwave plasma reactor: Films propertiesNaudin, F. / Tristant, P. / Hugon, M. C. / Jauberteau, I. et al. | 1999
- Pr8
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Heterobimetallic single-source precursors for MOCVD. Synthesis and characterization of volatile mixed ligand complexes of lanthanides, barium and magnesium -diketonates with d-element containing ligandsGleizes, A. N. / Senocq, F. / Julve, M. / Sanz, J. L. et al. | 1999
- Pr8
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Deposition of metastable Ti~(~1~-~x~)Al~xN films by plasma-enhanced CVDPrange, R. / Neuschuetz, D. et al. | 1999
- Pr8
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Boron doped polysilicon deposition in a sector reactor: Specific phenomena and propertiesScheid, E. / Furgal, L. / Vergnes, H. et al. | 1999
- Pr8
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Comparison of tantalum precursors for use in liquid injection CVD of thin film oxides, dielectrics and ferroelectricsCrosbie, M. J. / Wright, P. J. / Williams, D. J. / Lane, P. A. et al. | 1999
- Pr8
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Hybrid plasma polymerized membranes from organosilicon precursors for gas separationRoualdes, S. / Hovnanian, N. / Van der Lee, A. / Sanchez, J. et al. | 1999
- Pr8
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Er. Yb, and Er, Yb (CO-)doped yttria thin films, deposited by an aerosol assisted MO-CVD processMeffre, W. / Deschanvres, J.-L. / Joubert, M.-F. / Abello, L. et al. | 1999
- Pr8
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Silver pivalate as a new volatile precursor for thin film depositionKuzmina, N. / Paramonov, S. / Ivanov, R. / Kezko, V. et al. | 1999
- Pr8
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New volatile heterocyclic metal diketonates for MOCVDDrozdov, A. / Troyanov, S. / Fedorchenko, O. / Battiston, G. et al. | 1999
- Pr8
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AlNi coatings on the internal surfaces of tubesLabatut, C. / Metz, C. / Wahl, G. / Bianchi, P. et al. | 1999
- Pr8
-
In-situ process monitoring of MOCVD of superconducting and dielectric oxide thin filmsYamamoto, S. / Sugai, S. / Oda, S. et al. | 1999
- Pr8
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CVD-produced ZrO~2- and C/ZrO~2-fiber coatings for mullite/mullite compositesNubian, K. / Saruhan, B. / Schneider, H. / Wahl, G. et al. | 1999
- Pr8
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Optimisation of the MOCVD of Ti(C, N) in a pulsed H~2 - N~2 plasma by gas-phase analysisDriessen, J. P. A. M. / Kuypers, A. D. / Schoonman, J. et al. | 1999
- Pr8
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Phase relations in thin epitaxial films of complex oxides prepared by MOCVDSamoylenkov, S. V. / Gorbenko, O. Y. / Graboy, I. E. / Kaul, A. R. et al. | 1999
- Pr8
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Precision mass flow metering for CVD applicationsBoer, H. J. et al. | 1999
- Pr8
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FTIR based process control for industrial reactorsHopfe, V. / Graehlert, W. / Throl, O. et al. | 1999
- Pr8
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Development of an in-situ thickness measurement technique for film growth by APCVDRivero, J. M. / Marsh, J. / Raisbeck, D. et al. | 1999
- Pr8
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Nucleation behavior during the first stages of SiC growth on different substratesHurtos, E. / Rodriguez-Viejo, J. / Clavaguera-Mora, M. T. / Zekentes, K. et al. | 1999
- Pr8
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Optical properties of ultra-thin low pressure chemically vapor deposited silicon filmsDavazoglou, D. et al. | 1999
- Pr8
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CVD of mono and double-layers on Si-B-N-C fibresNestler, K. / Dietrich, D. / Preidel, A. / Weise, K. et al. | 1999
- Pr8
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MOCVD grown -doped InGaP/GaAs heterojunction bipolar transistorLiu, W. C. / Pan, H. J. / Cheng, S. Y. / Wang, W. C. et al. | 1999
- Pr8
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Low-temperature MOCVD of molybdenum sulfide on silicon and 100Cr6 steel substratesSenocq, F. / Bezombes, L. / Gleizes, A. / Garcia, J. A. et al. | 1999
- Pr8
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Photo-MOCVD of Cu thin films using Cu(hfa)(MHY) as precursorVidal, S. / Maury, F. / Gleizes, A. / Chen, T.-Y. et al. | 1999
- Pr8
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Initial stages of growth of LPCVD polysilicon films. Effect of the surface "ageing"Davazoglou, D. et al. | 1999
- Pr8
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GaInN/GaN heterostructures grown in production scale MOVPE reactorsSchoen, O. / Protzmann, H. / Rockenfeller, O. / Schineller, B. et al. | 1999
- Pr8
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Composition and magnetic properties of MOCVD processed thin films from nickeloceneDe Caro, D. / Brissonneau, L. / Boursier, D. / Madar, R. et al. | 1999
- Pr8
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Characterisation of complex multilayer structures using spectroscopic ellipsometryAlonso, M. I. / Garriga, M. / Dominguez, C. / Llobera, A. et al. | 1999
- Pr8
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Synthesis of pyrite (FeS~2) thin films by low pressure metal-organic chemical vapor depositionMeester, B. / Reijnen, L. / Goossens, A. / Schoonman, J. et al. | 1999
- Pr8
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MOCVD and properties of in situ doped Pt-SnO~2 thin filmsAmjoud, M. / Maury, F. et al. | 1999
- Pr8
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Chemical composition effects in the thin films of the colossal magnetoresistive perovskite manganates grown by MOCVDGorbenko, O. Y. / Graboy, I. E. / Bosak, A. A. / Amelichev, V. A. et al. | 1999
- Pr8
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Growth of oxide buffer layers and YBCO films on various substrates by pulsed injection CVDAbrutis, A. / Plausinaitiene, V. / Teiserskis, A. / Kubilius, V. et al. | 1999
- Pr8
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Deposition of nanoscale rhodium dots by STM assisted CVDMarchi, F. / Tonneau, D. / Pierrisnard, R. / Bouchiat, V. et al. | 1999
- Pr8
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SnO~2 thin films prepared by ion beam induced CVD. Preparation and characterizationJimenez, V. M. / Espinos, J. P. / Gonzalez-Elipe, A. R. / Caballero, A. et al. | 1999
- Pr8
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Study of sensing complex thin films prepared by PECVD method to H~2SDai, G. / Wu, Y. et al. | 1999
- Pr8
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XPS and XPS valence band characterizations of amorphous or polymeric silicon based thin films prepared by PACVD from organosilicon monomersBerjoan, R. / Biche, E. / Perarnau, D. / Roualdes, S. et al. | 1999
- Pr8
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Mechanical reinforcement of carbon foam by hafnium carbide depositSourdiaucourt, P. / Derre, A. / Delhaes, P. / David, P. et al. | 1999
- Pr8
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High breakdown n^+-GaAs/(p^+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVDLiu, W. C. / Chang, W. L. / Pan, H. J. / Chen, J. Y. et al. | 1999
- Pr8
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Deposition of Ta~2O~5 and (TiO~2)-(Ta~2O~5) films from Ta(OEt)~4(DMAE) and Ti(OEt)~2(DMAE)~2, by IMOCVDJimenez, C. / Paillous, M. / Madar, R. / Senateur, J. P. et al. | 1999
- Pr8
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Single source MOCVD of superconducting films onto moved substratesStadel, O. / Klippe, L. / Schmidt, J. / Wahl, G. et al. | 1999
- Pr8
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MOCVD of Ni and Ni~3C films from Ni(dmen)~2(tfa)~2Brissonneau, L. / Kacheva, A. / Senocq, F. / Kang, J.-K. et al. | 1999
- Pr8
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Epitaxiat ferroelectric capacitors obtained by MOCVDNovozhilov, M. A. / Kaul, A. R. / Gorbenko, O. Y. / Graboy, I. E. et al. | 1999
- Pr8
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MOCVD of SnO~2 thin films from a new organometallic precursorBarreca, D. / Garon, S. / Zanella, P. / Tondello, E. et al. | 1999
- Pr8
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Continuous CVD processing of multi-filament fibre coatings for the manufacture of ceramic matrix compositesDias, A. G. / Nagy, E. / Saturnio, A. et al. | 1999
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In situ characterization of atomic layer deposition processes by a mass spectrometerRitala, M. / Juppo, M. / Kukli, K. / Rahtu, A. et al. | 1999
- Pr8
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LPCVD amorphous silicon carbide films, properties and microelectronics applicationsKleps, I. / Angelescu, A. et al. | 1999
- Pr8
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MOCVD of electroceramic oxides: A precursor manufacturer's perspectiveJones, A. C. / Leedham, T. J. / Brooks, J. / Davies, H. O. et al. | 1999
- Pr8
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CVD induced by ion beams for the preparation of oxide and nitride thin filmsGonzailez-Elipe, A. R. / Espinos, J. P. / Barranco, A. / Yubero, F. et al. | 1999
- Pr8
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Synthesis of polycrystalline silicon films on metalized ceramic substrates with laser-assisted chemical vapor depositionKorevaar, G. / Goossens, A. / Schoonman, J. et al. | 1999
- Pr8
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ALD precursor chemistry: Evolution and future challengesLeskela, M. / Ritala, M. et al. | 1999
- Pr8
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A new In~0~.~5Ga~0~.~5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVDLiu, W. C. / Cheng, S. Y. / Pan, H. J. / Chen, J. Y. et al. | 1999
- Pr8
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MOCVD of ferroelectric thin filmsSchmidt, C. / Lehnert, W. / Leistner, T. / Frey, L. et al. | 1999
- Pr8
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OMVPE of GaN using (N~3)~2Ga[(CH~2)~3N(CH~3)~2] (BAZIGA) in a cold wall reactorDevi, A. / Rogge, W. / Fischer, R. A. / Stowasser, F. et al. | 1999
- Pr8
-
Modeling of aerosol-assisted chemical vapor co-deposition of NiO and carbon nanotubesNarducci, D. / Toselli, L. / Milani, P. et al. | 1999
- Pr8
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Synthesis and characterisation of -ketoesterate complexes of yttrium, barium and copper(II): New precursors for liquid injection MOCVD?Guillon, H. / Daniele, S. / Hubert-Pfalzgraf, L. G. et al. | 1999
- Pr8
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New flash-evaporation feeder for chemical vapor depositionChuprakov, I. S. / Martin, J. D. / Dahmen, K. H. et al. | 1999
- Pr8
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LPCVD boron carbonitride films from triethylamine boraneKosinova, M. L. / Fainer, N. I. / Rumyantsev, Y. M. / Golubenko, A. N. et al. | 1999
- Pr8
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Properties of multicomponent layers produced on high speed steel by combined nitriding and PACVD methods under glow discharge conditionsSobiecki, J. R. / Kim, S. K. / Wierzchon, T. / Trojanowski, J. et al. | 1999
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Diamond nuclei formation in a microwave plasma assisted chemical vapor deposition (MWCVD) systemGarcia, M. M. / Vazquez, L. / Gomez-Aleixandre, C. / Sanchez, O. et al. | 1999
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In-situ-spectroscopic monitoring for SIC-CVD process controlBrennfleck, K. / Schneweis, S. / Weiss, R. et al. | 1999
- Pr8
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Volatile surfactant assisted MOCVD of oxide materialsMolodyk, A. A. / Kaul, A. R. / Gorbenko, O. Y. / Novojilov, M. A. et al. | 1999
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Carbon nitride films prepared by inductively coupled plasma chemical vapour deposition from a solid carbon sourcePopov, C. / Plass, M. F. / Kulisch, W. et al. | 1999
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Chemical vapor deposition of zinc gallate using a novel single precursorKim, C. G. / Koh, W. / Ku, S.-J. / Nah, E. J. et al. | 1999
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Unveiling the magic of H~2S on the CVD-Al~2O~3 coatingOshika, T. / Nishiyama, A. / Nakaso, K. / Shimada, M. et al. | 1999
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XPS study of CVD silicon thin films deposited on various substrates from SiH~4 gaseous precursorBerjoan, R. / Perarnau, D. / Caussat, B. et al. | 1999