New trends in Brunner's relation: dielectric levels [3679-95] (English)
- New search for: Trouiller, Y.
- New search for: Didiergeorges, A.
- New search for: Fanget, G. L.
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- New search for: Trouiller, Y.
- New search for: Didiergeorges, A.
- New search for: Fanget, G. L.
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In:
Optical microlithography
3679
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893-904
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1999
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ISBN:
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ISSN:
- Conference paper / Print
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Title:New trends in Brunner's relation: dielectric levels [3679-95]
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Contributors:Trouiller, Y. ( author ) / Didiergeorges, A. ( author ) / Fanget, G. L. ( author ) / Laviron, C. ( author ) / Van den Hove, L. / SPIE
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Conference:Conference; 12th, Optical microlithography ; 1999 ; Santa Clara; CA
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Published in:Optical microlithography , 3679 ; 893-904PROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING , 3679 ; 893-904
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Publisher:
- New search for: SPIE
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Publication date:1999-01-01
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Size:12 pages
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2
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Business dynamics of lithography at very low k~1 factors [3679-201]Harrell, S. / Preil, M. E. / SPIE et al. | 1999
- 2
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Business dynamics of lithography at very low k1 factorsHarrell, Sam / Preil, Moshe E. et al. | 1999
- 10
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Practicing extension of 248-nm DUV optical lithography using trim-mask PSM [3679-01]Kling, M. E. / Cave, N. / Falch, B. J. / Fu, C.-C. / SPIE et al. | 1999
- 10
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Practicing extension of 248-nm DUV optical lithography using trim-mask PSMKling, Michael E. / Cave, Nigel / Falch, Bradley J. / Fu, Chong-Cheng / Green, Kent G. / Lucas, Kevin D. / Roman, Bernard J. / Reich, Alfred J. / Sturtevant, John L. / Tian, Ruiqi et al. | 1999
- 18
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Effects of phase-shift masks on across-field linewidth control [3679-02]Schenker, R. E. / SPIE et al. | 1999
- 18
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Effects of phase-shift masks on across-field linewidth controlSchenker, Richard E. et al. | 1999
- 27
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Alternating phase-shifted mask for logic gate levels, design, and mask manufacturing [3679-03]Liebmann, L. W. / Graur, I. C. / Leipold, W. C. / Oberschmidt, J. M. / SPIE et al. | 1999
- 27
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Alternating phase-shifted mask for logic gate levels, design, and mask manufacturingLiebmann, Lars W. / Graur, Ioana C. / Leipold, William C. / Oberschmidt, James M. / O'Grady, David S. / Regaill, Denis et al. | 1999
- 38
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Design of 200-nm, 170-nm, and 140-nm DUV contact sweeper high-transmission attenuating phase-shift mask: II. Experimental results [3679-04]Socha, R. J. / Shi, X. / Holman, K. C. / Dusa, M. V. / SPIE et al. | 1999
- 38
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Design of 200-nm, 170-nm, and 140-nm DUV contact sweeper high-transmission attenuating phase-shift mask: II. Experimental resultsSocha, Robert J. / Shi, Xuelong / Holman, Ken C. / Dusa, Mircea V. / Conley, Will / Petersen, John S. / Chen, J. Fung / Laidig, Thomas L. / Wampler, Kurt E. / Caldwell, Roger F. et al. | 1999
- 55
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Imaging contrast improvement for 160-nm line features using subresolution assist features with binary, six percent ternary attenuated phase-shift mask with process-tuned resist [3679-05]Kachwala, N. / Petersen, J. S. / Chen, J. F. / Canjemi, M. / SPIE et al. | 1999
- 55
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Imaging contrast improvement for 160-nm line features using subresolution assist features with binary, six percent ternary attenuated phase-shift mask with process-tuned resistKachwala, Nishrin / Petersen, John S. / Chen, J. Fung / Canjemi, Mike / McCallum, Martin et al. | 1999
- 70
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Application of blazed gratings for determination of equivalent primary azimuthal aberrationsKirk, Joseph P. / Progler, Christopher J. et al. | 1999
- 70
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Application of blazed gratings for determination of equivalent primary azimuthal aberrations [3679-06]Kirk, J. P. / Progler, C. J. / SPIE et al. | 1999
- 77
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Novel aberration monitor for optical lithography [3679-07]Dirksen, P. / Juffermans, C. A. / Pellens, R. J. / Maenhoudt, M. / SPIE et al. | 1999
- 77
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Novel aberration monitor for optical lithographyDirksen, Peter / Juffermans, Casper A. H. / Pellens, Rudy J. M. / Maenhoudt, Mireille / De Bisschop, Peter et al. | 1999
- 87
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Mathematical treatment of condenser aberrations and their impact on linewidth control [3679-08]Krautschik, C. G. / Shibuya, M. / Toh, K. K. / SPIE et al. | 1999
- 87
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Mathematical treatment of condenser aberrations and their impact on linewidth controlKrautschik, Christof G. / Shibuya, Masato / Toh, Kenny K. et al. | 1999
- 99
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Measurement of effective source shift using a grating-pinhole mask [3679-09]Sato, K. / Tanaka, S. / Fujisawa, T. / Inoue, S. / SPIE et al. | 1999
- 99
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Measurement of effective source shift using a grating-pinhole maskSato, Kazuya / Tanaka, Satoshi / Fujisawa, Tadahito / Inoue, Soichi et al. | 1999
- 108
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Performance of a phase-shift focus monitor reticle designed for 193-nm useKunz, Roderick R. / Chan, M. S. / Doran, Scott P. et al. | 1999
- 108
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Performance of a phase-shift focus monitor reticle designed for 193-nm use [3679-10]Kunz, R. R. / Chan, M. Y. / Doran, S. P. / SPIE et al. | 1999
- 118
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Design, reticle, and wafer OPC manufacturability for the 0.18-m lithography generation [3679-11]Lucas, K. D. / McCallum, M. / Falch, B. J. / Wood, J. L. / SPIE et al. | 1999
- 118
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Design, reticle, and wafer OPC manufacturability for the 0.18-μm lithography generationLucas, Kevin D. / McCallum, Martin / Falch, Bradley J. / Wood, James L. / Kalk, Franklin D. / Henderson, Robert K. / Russell, Drew R. et al. | 1999
- 130
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Verifying the "correctness" of your optical proximity correction designsMalhotra, Vinod K. / Chang, Fang C. et al. | 1999
- 130
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Verifying the "correctness" of your optical proximity correction designs [3679-12]Malhotra, V. K. / Chang, F.-C. / SPIE et al. | 1999
- 138
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Comparison study for sub-150-nm DUV lithography between high-NA KrF and ArF lithographyYim, Donggyu / Kwon, Ki-Sung / Ham, Young-Mog / Baik, Ki-Ho et al. | 1999
- 138
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Comparison study for sub-150-nm DUV lithography between high-NA KrF and ArF lithography [3679-14]Yim, D. / Kwon, K.-S. / Ham, Y.-M. / Baik, K.-H. / SPIE et al. | 1999
- 150
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New technique for optical lithography at low k-factors [3679-42]Sewell, H. / McCullough, A. W. / Lauria, J. E. / Andresen, K. W. / SPIE et al. | 1999
- 150
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New technique for optical lithography at low k-factorsSewell, Harry / McCullough, Andrew W. / Lauria, John E. / Andresen, Keith W. et al. | 1999
- 162
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Understanding systematic and random CD variations using predictive modeling techniques [3679-16]Flagello, D. G. / Van der Laan, H. / Van Schoot, J. / Bouchoms, I. / SPIE et al. | 1999
- 162
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Understanding systematic and random CD variations using predictive modeling techniquesFlagello, Donis G. / van der Laan, Hans / van Schoot, Jan B. / Bouchoms, Igor / Geh, Bernd et al. | 1999
- 176
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Variable-threshold resist models for lithography simulation [3679-17]Randall, J. / Ronse, K. / Marschner, T. / Goethals, M. / SPIE et al. | 1999
- 176
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Variable-threshold resist models for lithography simulationRandall, John / Ronse, Kurt G. / Marschner, Thomas / Goethals, Anne-Marie / Ercken, Monique et al. | 1999
- 183
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Matching simulation and experiment for chemically amplified resists [3679-18]Mack, C. A. / Ercken, M. / Moelant, M. / SPIE et al. | 1999
- 183
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Matching simulation and experiment for chemically amplified resistsMack, Chris A. / Ercken, Monique / Moelants, Myriam et al. | 1999
- 193
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Method to budget and optimize total device overlay [3679-19]Progler, C. J. / Bukofsky, S. J. / Wheeler, D. C. / SPIE et al. | 1999
- 193
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Method to budget and optimize total device overlayProgler, Christopher J. / Bukofsky, Scott J. / Wheeler, Donald C. et al. | 1999
- 208
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High-speed alignment simulator for Nikon steppersCoon, Derek P. / Aiyer, Arun A. / Chau, Henry K. / Ooki, Hiroshi et al. | 1999
- 208
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High-speed alignment simulator for Nikon steppers [3679-20]Coon, P. D. / Aiyer, A. A. / Chau, H. K. / Ooki, H. / SPIE et al. | 1999
- 220
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Characterization of CD control for sub-0.18-m lithographic patterning [3679-21]Sturtevant, J. L. / Allgair, J. / Fu, C.-C. / Green, K. G. / SPIE et al. | 1999
- 220
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Characterization of CD control for sub-0.18-μm lithographic patterningSturtevant, John L. / Allgair, John A. / Fu, Chong-Cheng / Green, Kent G. / Hershey, Robert R. / Kling, Michael E. / Litt, Lloyd C. / Lucas, Kevin D. / Roman, Bernard J. / Seligman, Gary S. et al. | 1999
- 228
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CD control comparison for sub-0.18-μm patterning using 248-nm lithography and strong resolution enhancement techniquesVandenberghe, Geert / Marschner, Thomas / Ronse, Kurt G. / Socha, Robert J. / Dusa, Mircea V. et al. | 1999
- 228
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CD control comparison for sub-0.18-m patterning using 248-nm lithography and strong resolution enhancement techniques [3679-22]Vandenberghe, G. / Marschner, T. / Ronse, K. / Socha, R. J. / SPIE et al. | 1999
- 239
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CD uniformity consideration for DUV step and scan toolsSeltmann, Rolf / Minvielle, Anna Maria / Spence, Chris A. / Muehle, Sven / Capodieci, Luigi / Nguyen, Khanh B. et al. | 1999
- 239
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CD uniformity consideration for DUV step and scan tools [3679-23]Seltmann, R. / Minvielle, A. M. / Spence, C. A. / Muehle, S. / SPIE et al. | 1999
- 250
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Mask error factor: causes and implications for process latitude [3679-24]Van Schoot, J. / Finders, J. / Van Ingen Schenau, K. / Klaassen, M. / SPIE et al. | 1999
- 250
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Mask error factor: causes and implications for process latitudevan Schoot, Jan B. / Finders, Jo / van Ingen Schenau, Koen / Klaassen, Michel / Buijk, Corine et al. | 1999
- 261
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Impact of mask errors on full chip error budgets [3679-25]Schellenberg, F. M. / Boksha, V. V. / Cobb, N. B. / Lai, J. C. / SPIE et al. | 1999
- 261
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Impact of mask errors on full chip error budgetsSchellenberg, Franklin M. / Boksha, Victor V. / Cobb, Nicolas B. / Lai, J. C. / Chen, C. H. / Mack, Chris A. et al. | 1999
- 278
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193-nm lithography on a full-field scanner [3679-26]Goethals, A.-M. / Pollers, I. / Jaenen, P. / Van Roey, F. / SPIE et al. | 1999
- 278
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193-nm lithography on a full-field scannerGoethals, Anne-Marie / Pollers, Ingrid / Jaenen, Patrick / Van Roey, Frieda / Ronse, Kurt G. / Heskamp, Barbra / Davies, Guy et al. | 1999
- 290
-
Feasibility studies of ArF lithography for sub-130-nm lithographyLee, Seung-Hyuk / Yim, Donggyu / Ham, Young-Mog / Baik, Ki-Ho / Choi, Il-Hyun et al. | 1999
- 290
-
Feasibility studies of ArF lithography for sub-130-nm lithography [3679-27]Lee, S.-H. / Yim, D. / Ham, Y.-M. / Baik, K.-H. / SPIE et al. | 1999
- 302
-
Challenge to sub-0.1-m pattern fabrication using an alternating phase-shifting mask in ArF lithography [3679-28]Matsuo, T. / Nakazawa, K. / Ogawa, T. / SPIE et al. | 1999
- 302
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Challenge to sub-0.1-μm pattern fabrication using an alternating phase-shifting mask in ArF lithographyMatsuo, Takahiro / Nakazawa, Keisuke / Ogawa, Tohru et al. | 1999
- 310
-
Optical extension at the 193-nm wavelength [3679-29]Zandbergen, P. / McCallum, M. / Amblard, G. R. / Domke, W.-O. / SPIE et al. | 1999
- 310
-
Optical extension at the 193-nm wavelengthZandbergen, Peter / McCallum, Martin / Amblard, Gilles R. / Domke, Wolf-Dieter / Smith, Bruce W. / Zavyalova, Lena / Petersen, John S. et al. | 1999
- 320
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Depth of focus enhancement for 193-nm window lithography with subresolution assist featuresWatson, Pat G. / Kroyan, Armen / Cirelli, Raymond A. / Maynard, H. L. / Sweeney, James R. / Klemens, Fred P. / Timp, G. L. / Nalamasu, Omkaram et al. | 1999
- 320
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Depth of focus enhancement for 193-nm window lithography with subresolution assist features [3679-30]Watson, G. P. / Kroyan, A. / Cirelli, R. A. / Maynard, H. L. / SPIE et al. | 1999
- 330
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Variations to the influence of lens aberration invoked with PSM and OAI [3679-31]Smith, B. W. / SPIE et al. | 1999
- 330
-
Variations to the influence of lens aberration invoked with PSM and OAISmith, Bruce W. et al. | 1999
- 347
-
Feasibility of printing 0.1-μm technology with optical lithographyMaenhoudt, Mireille / Verhaegen, Staf / Ronse, Kurt G. / Flagello, Donis G. / Geh, Bernd / Kaiser, Winfried M. et al. | 1999
- 347
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Feasibility of printing 0.1-m technology with optical lithography [3679-32]Maenhoudt, M. / Verhaegen, S. / Ronse, K. / Flagello, D. G. / SPIE et al. | 1999
- 358
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Higher-order aberration measurement with printed patterns under extremely reduced illumination [3679-33]Nomura, H. / Tawarayama, K. / Kohno, T. / SPIE et al. | 1999
- 358
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Higher-order aberration measurement with printed patterns under extremely reduced sigma illuminationNomura, Hiroshi / Tawarayama, Kazuo / Kohno, Takuya et al. | 1999
- 368
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Flare impact on the intrafield CD control for sub-0.25-μm patterningLuce, Emmanuelle / Minghetti, Blandine / Schiavone, Patrick / Toublan, Olivier / Weill, Andre P. et al. | 1999
- 368
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Flare impact on the intrafield CD control for sub-0.25-m patterning [3679-34]Luce, E. / Minghetti, B. / Schiavone, P. / Toublan, O. / SPIE et al. | 1999
- 382
-
Effect of negative-tone mask lithography on lens aberration phenomenaTsujita, Kouichirou / Yamauchi, Yuuji / Ueno, Atsushi / Wakamiya, Wataru / Nishimura, Tadashi et al. | 1999
- 382
-
Effect of negative-tone mask lithography on lens aberration phenomena [3679-35]Tsujita, K. / Yamauchi, Y. / Ueno, A. / Wakamiya, W. / SPIE et al. | 1999
- 396
-
Multilevel imaging system realizing k1=0.3 lithographySuzuki, Akiyoshi / Saitoh, Kenji / Yoshii, Minoru et al. | 1999
- 396
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Multilevel imaging system realizing k~1=0.3 lithography [3679-36]Suzuki, A. / Saitoh, K. / Yoshii, M. / SPIE et al. | 1999
- 408
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Resolution and DOF improvement through the use of square-shaped illumination [3679-37]Smith, B. W. / Zavyalova, L. / Smith, S. G. / Petersen, J. S. / SPIE et al. | 1999
- 408
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Resolution and DOF improvement through the use of square-shaped illuminationSmith, Bruce W. / Zavyalova, Lena / Smith, S. G. / Petersen, John S. et al. | 1999
- 420
-
Assessment of synchronous filtering as an alternative to phase-shifting masks at k1=0.4Neureuther, Andrew R. / Li, Meng et al. | 1999
- 420
-
Assessment of synchronous filtering as an alternative to phase-shifting masks at k~1=0.4 [3679-38]Neureuther, A. R. / Li, M. / SPIE et al. | 1999
- 427
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Customized off-axis illumination aperture filtering for sub-0.18-m KrF lithography [3679-39]Hsia, C.-C. / Gau, T.-S. / Yang, C.-H. / Liu, R.-G. / SPIE et al. | 1999
- 427
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Customized off-axis illumination aperture filtering for sub-0.18-μm KrF lithographyHsia, Chin C. / Gau, Tsai-Sheng / Yang, Chuen-Huei / Liu, Ru-Gun / Chang, ChungHsing / Chen, Li-Jui / Wang, Chien-Ming / Chen, J. Fung / Smith, Bruce W. / Hwang, Gue-Wuu et al. | 1999
- 435
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Combination of OPC and AttPSM for patterning sub-0.18-m logic devices [3679-40]Kuo, H. J. / Lin, C. H. / Tzu, S. D. / Yen, A. / SPIE et al. | 1999
- 435
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Combination of OPC and AttPSM for patterning sub-0.18-μm logic devicesKuo, Hung J. / Lin, Chia-Hui / Tzu, San-De / Yen, Anthony et al. | 1999
- 448
-
0.7-NA DUV step-and-scan system for 150-nm imaging with improved overlay [3679-41]Van Schoot, J. / Bornebroek, F. / Suddendorf, M. / Mulder, M. / SPIE et al. | 1999
- 448
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0.7-NA DUV step-and-scan system for 150-nm imaging with improved overlayvan Schoot, Jan B. / Bornebroek, Frank / Suddendorf, Manfred / Mulder, Melchior / van der Spek, Jeroen / Stoeten, Jan / Hunter, Adolph / Ruemmer, Peter et al. | 1999
- 464
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150-nm generation lithography equipment [3679-43]Deguchi, N. / Uzawa, S. / SPIE et al. | 1999
- 464
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150-nm generation lithography equipmentDeguchi, Nobuyoshi / Uzawa, Shigeyuki et al. | 1999
- 473
-
Synergistic evolution to production-worthy 30-nm lithographyCote, Daniel R. / McClay, James A. / Harned, Noreen et al. | 1999
- 473
-
Synergistic evolution to production-worthy 30-nm lithography [3679-130]Cote, D. R. / McClay, J. A. / Harned, N. / SPIE et al. | 1999
- 483
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Performance of 300-mm lithography tools in a pilot production lineMaltabes, John G. / Charles, Alain B. / Hornig, Steffen R. / Schedel, Thorsten / Ganz, Dietmar / Schmidt, Sebastian et al. | 1999
- 483
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Performance of 300-mm lithography tools in a pilot production line [3679-44]Maltabes, J. G. / Charles, A. B. / Hornig, S. R. / Schedel, T. / SPIE et al. | 1999
- 497
-
Watt-level DUV generation by solid state laser for lithography [3679-45]Ohsako, Y. / Sakuma, J. / Finch, A. / Deki, K. / SPIE et al. | 1999
- 497
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Watt-level DUV generation by solid state laser for lithographyOhsako, Yasu / Sakuma, Jun / Finch, Andrew / Deki, Kyoichi / Horiguchi, Masahiro / Yokota, Toshio et al. | 1999
- 506
-
ArF step-and-scan exposure system for 0.15-μm and 0.13-μm technology nodesMulkens, Jan / Stoeldraijer, Judon M. D. / Davies, Guy / Dierichs, Marcel / Heskamp, Barbra / Moers, Marco H. P. / George, Richard A. / Roempp, Oliver / Glatzel, Holger / Wagner, Christian et al. | 1999
- 506
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ArF step-and-scan exposure system for 0.15-m and 0.13-m technology nodes [3679-46]Mulkens, J. / Stoeldraijer, J. M. / Davies, G. / Dierichs, M. / SPIE et al. | 1999
- 522
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Performance of the ArF scanning exposure tool [3679-47]Mori, S. / SPIE et al. | 1999
- 522
-
Performance of the ArF scanning exposure toolMori, Susumu et al. | 1999
- 530
-
Impact of pellicle damage on patterning characteristics in ArF lithographyMiyazaki, Junji / Uematsu, Masaya / Ogawa, Tohru et al. | 1999
- 530
-
Impact of pellicle damage on patterning characteristics in ArF lithography [3679-48]Miyazaki, J. / Uematsu, M. / Ogawa, T. / SPIE et al. | 1999
- 541
-
Revisiting F~2 laser for DUV microlithography [3679-49]Hofmann, T. / Hueber, J.-M. / Das, P. P. / Scholler, S. / SPIE et al. | 1999
- 541
-
Revisiting F2laser for DUV microlithographyHofmann, Thomas / Hueber, Jean-Marc / Das, Palash P. / Scholler, Scott et al. | 1999
- 548
-
Integration of alternating phase-shift mask technology into optical proximity correction [3679-51]Thiele, J. / Friedrich, C. / Dolainsky, C. / Karakatsanis, P. / SPIE et al. | 1999
- 548
-
Integration of alternating phase-shift mask technology into optical proximity correctionThiele, Joerg / Friedrich, Christoph M. / Dolainsky, Christoph / Karakatsanis, Paul / Maurer, Wilhelm et al. | 1999
- 556
-
Alternating PSM optimization using model-based OPCTritchkov, Alexander V. / Stirniman, John P. / Rieger, Michael L. et al. | 1999
- 556
-
Alternating PSM optimization using model-based OPC [3679-52]Tritchkov, A. / Stirniman, J. P. / Rieger, M. L. / SPIE et al. | 1999
- 567
-
Pattern asymmetries in phase-edge imaging [3679-53]Fritze, M. / Cann, S. G. / Wyatt, P. / SPIE et al. | 1999
- 567
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Pattern asymmetries in phase-edge imagingFritze, Michael / Cann, Susan G. / Wyatt, Peter W. et al. | 1999
- 582
-
Clear-field alternating PSM for 193-nm lithography [3679-54]Schiavone, P. / Lalanne, F. P. / Prola, A. / SPIE et al. | 1999
- 582
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Clear-field alternating PSM for 193-nm lithographySchiavone, Patrick / Lalanne, Frederic P. / Prola, Alain et al. | 1999
- 590
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Evaluating the potential of alternating phase-shift masks using lithography simulationFriedrich, Christoph M. / Ergenzinger, Klaus / Gans, Fritz / Grassmann, Andreas / Griesinger, Uwe A. / Knobloch, Juergen / Mader, Leonhard / Maurer, Wilhelm / Pforr, Rainer et al. | 1999
- 590
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Evaluating the potential of alternating phase-shift masks using lithography simulation [3679-55]Friedrich, C. / Ergenzinger, K. / Gans, F. / Grassmann, A. / SPIE et al. | 1999
- 600
-
Full-depth optical proximity correction (FD-OPC) based on E-D forest [3679-57]Lin, B. J. / Young, P. / SPIE et al. | 1999
- 600
-
Full-depth optical proximity correction (FD-OPC) based on E-D forestLin, Burn J. / Young, Peter et al. | 1999
- 607
-
Resolution enhancement through optical proximity correction and stepper parameter optimization for 0.12-μm mask patternOh, Yong-Ho / Lee, Jai-Cheol / Lim, Sungwoo et al. | 1999
- 607
-
Resolution enhancement through optical proximity correction and stepper parameter optimization for 0.12-m mask pattern [3679-58]Oh, Y.-H. / Lee, J.-C. / Lim, S. / SPIE et al. | 1999
- 614
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Hierarchical processing for accurate optical proximity correction for 1-Gb DRAM metal layersKobayashi, Sachiko / Uno, Taiga / Yamamoto, Kazuko / Tanaka, Satoshi / Kotani, Toshiya / Inoue, Soichi / Higurashi, Hitoshi / Watanabe, Susumu / Yano, Mitsuhiro / Ohki, Sinichiro et al. | 1999
- 622
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Systematic approach to correct critical patterns induced by the lithography process at the full-chip level [3679-60]Park, C.-H. / Kim, Y.-H. / Park, J.-S. / Kim, K.-D. / SPIE et al. | 1999
- 622
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Systematic approach to correct critical patterns induced by the lithography process at the full-chip levelPark, Chul-Hong / Kim, Yoo-Hyon / Park, Ji-Soong / Kim, Kwan-Do / Yoo, Moon-Hyun / Kong, Jeong-Taek et al. | 1999
- 630
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Effects of subresolution assist features on depth of focus and uniformity of contact windows for 193-nm lithographyKroyan, Armen / Watson, Pat G. / Cirelli, Raymond A. / Nalamasu, Omkaram / Tittel, Frank K. et al. | 1999
- 630
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Effects of subresolution assist features on depth of focus and uniformity of contact windows for 193-nm lithography [3679-61]Kroyan, A. / Watson, G. P. / Cirelli, R. A. / Nalamasu, O. / SPIE et al. | 1999
- 639
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Application of a new approach to Optical proximity correction [3679-62]Rosenbusch, A. / Hourd, A. C. / Juffermans, C. A. / Kirsch, H. / SPIE et al. | 1999
- 639
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Application of a new approach to optical proximity correctionRosenbusch, Anja / Hourd, Andrew C. / Juffermans, Casper A. H. / Kirsch, Hartmut / Lalanne, Frederic P. / Maurer, Wilhelm / Romeo, Carmelo / Ronse, Kurt G. / Schiavone, Patrick / Simecek, Michal et al. | 1999
- 648
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Optical proximity correction considering process latitudeMisaka, Akio / Odanaka, Shinji et al. | 1999
- 648
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Optical proximity correction considering process latitude [3679-63]Misaka, A. / Odanaka, S. / SPIE et al. | 1999
- 659
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Development of a lithographic DRC technique for interactive use and batch processing [3679-64]Futatsuya, H. / Chijimatsu, T. / Asai, S. / Hanyu, I. / SPIE et al. | 1999
- 659
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Development of a lithographic DRC technique for interactive use and batch processingFutatsuya, Hiroki / Chijimatsu, Tatsuo / Asai, Satoru / Hanyu, Isamu et al. | 1999
- 666
-
Practical methodology of optical proximity correction in subquarter-micron lithography [3679-65]Lim, C.-M. / Seo, J.-W. / Kang, C.-S. / Park, Y.-S. / SPIE et al. | 1999
- 666
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Practical methodology of optical proximity correction in subquarter-micron lithographyLim, Chang-Moon / Seo, Jae-Wook / Kang, Chun-Soo / Park, Young-Soo / Yoon, Jong-Tai / Lee, Chul-Seung / Moon, Seung-Chan / Kim, Bong-Ho et al. | 1999
- 675
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Automatic parallel optical proximity correction system for application with hierarchical data structureTsujimoto, Eiji / Watanabe, Takahiro / Nakajo, Kyoji et al. | 1999
- 675
-
Automatic parallel optical proximity correction system for application with hierarchical data structure [3679-66]Tsujimoto, E. / Watanabe, T. / Nakajo, K. / SPIE et al. | 1999
- 686
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Optical proximity correction for submicron lithography by laser direct writing [3679-67]Guo, Y. / Du, J. / Huang, Q. / Yao, J. / SPIE et al. | 1999
- 686
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Optical proximity correction for submicron lithography by laser direct writingGuo, Yongkang / Du, Jinglei / Huang, Qizhong / Yao, Jun / Qiu, Chuankai / Cui, Zheng et al. | 1999
- 691
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Reduction of isolated-dense bias by optimization off-axis illumination for 150-nm lithography using KrF [3679-69]Kim, S.-K. / Ahn, C.-N. / Kim, S.-M. / Ham, Y.-M. / SPIE et al. | 1999
- 691
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Reduction of isolated-dense bias by optimization off-axis illumination for 150-nm lithography using KrFKim, Seok-Kyun / Ahn, Chang-Nam / Kim, Seo-Min / Ham, Young-Mog / Baik, Ki-Ho et al. | 1999
- 697
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Illuminator optimization for projection printingBarouch, Eytan / Knodle, Steven L. / Orszag, Steven A. / Yeung, Michael S. et al. | 1999
- 697
-
Illuminator optimization for projection printing [3679-71]Barouch, E. / Knodle, S. L. / Orszag, S. A. / Yeung, M. S. / SPIE et al. | 1999
- 704
-
New technology for enhancing depth of focus using birefringent material [3679-72]Kim, D. H. / Chung, H. B. / Cho, K.-I. / Kim, D. Y. / SPIE et al. | 1999
- 704
-
New technology for enhancing depth of focus using birefringent materialKim, Dohoon / Chung, Hai Bin / Cho, Kyoung I. / Kim, Dae Y. et al. | 1999
- 715
-
Spatial frequency analysis of optical lithography resolution enhancement techniques [3679-73]Brueck, S. R. J. / Chen, X. / SPIE et al. | 1999
- 715
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Spatial frequency analysis of optical lithography resolution enhancement techniquesBrueck, Steven R. J. / Chen, Xiaolan et al. | 1999
- 726
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Process issues of sub-0.20-m contact hole patterns for logic devices and DRAM [3679-74]Yang, H. / Yoon, J. / Jeong, G. / Huh, H. / SPIE et al. | 1999
- 726
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Process issues of sub-0.20-μm contact hole patterns for logic devices and DRAMYang, Hyun-Jo / Yoon, Jin Young / Jeong, Goo-Min / Huh, Hoon / Kim, Jaejeong et al. | 1999
- 736
-
Experimental comparison of off-axis illumination and imaging interferometric lithographyChen, Xiaolan / Brueck, Steven R. J. et al. | 1999
- 736
-
Experimental comparison of off-axis illumination and imaging interferometric lithography [3679-75]Chen, X. / Brueck, S. R. J. / SPIE et al. | 1999
- 745
-
New mask having functions of OAI and PSM to realize sub-0.2-m patterns with 248 nm in microlithography [3679-76]Luo, X. / Yao, H. / Chen, X. / Feng, B. / SPIE et al. | 1999
- 745
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New mask having functions of OAI and PSM to realize sub-0.2-μm patterns with 248 nm in microlithographyLuo, Xiangang / Yao, HanMin / Chen, Xunan / Boru, Feng et al. | 1999
- 750
-
Off-axis illumination for improving depth of focus for isolated featuresTsacoyeanes, James G. et al. | 1999
- 750
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Off-axis illumination for improving depth of focus for isolated features [3679-77]Tsacoyeanes, J. G. / SPIE et al. | 1999
- 762
-
Coherent multiple imaging by means of pupil plane filtering [3679-78]Erdelyi, M. / Kroyan, A. / Osvay, K. / Bor, Z. / SPIE et al. | 1999
- 762
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Coherent multiple imaging by means of pupil plane filteringErdelyi, Miklos / Kroyan, Armen / Osvay, Karoly / Bor, Zsolt / Wilson, William L. / Smayling, Michael C. / Tittel, Frank K. et al. | 1999
- 772
-
Study of the impact to image quality and overlay by different pupil fills in a DUV scanner via overlay metrology [3679-79]Lai, K. / Tasaico, P. / Doros, T. / Holladay, D. W. / SPIE et al. | 1999
- 772
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Study of the impact to image quality and overlay by different pupil fills in a DUV scanner via overlay metrologyLai, Kafai / Tasaico, Pedro / Doros, Theodore G. / Holladay, Dan W. et al. | 1999
- 783
-
Study of pupil filters for depth of focus enhancement in printing contact holes [3679-80]Wang, C.-M. / Yu, S.-S. / Yen, A. / SPIE et al. | 1999
- 783
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Study of pupil filters for depth of focus enhancement in printing contact holesWang, Chun-Ming A. / Yu, Shinn Sheng / Yen, Anthony et al. | 1999
- 792
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Design of illumination aperture for ArF exposure system with wide exposing latitudeChoi, Sang-Soo / Cha, Han-Sun / Kim, Jong-Soo / Lee, Kag Hyeon / Kim, Dohoon / Chung, Hai Bin / Kim, Dae Y. et al. | 1999
- 792
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Design of illumination aperture for ArF exposure system with wide exposing latitude [3679-81]Choi, S.-S. / Cha, H. S. / Kim, J.-S. / Lee, K. H. / SPIE et al. | 1999
- 800
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DOF improvement by complex pupil filtering for DUV lithography [3679-82]Jedrasik, P. / SPIE et al. | 1999
- 800
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DOF improvement by complex pupil filtering for DUV lithographyJedrasik, Piotr et al. | 1999
- 812
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Optimization of attenuated phase-shift mask for contact hole printingChen, Yung-Tin / Wang, Ya-Chih / Chu, Ronfu et al. | 1999
- 812
-
Optimization of attenuated phase-shift mask for contact hole printing [3679-83]Chen, Y.-T. / Wang, Y.-C. / Chu, R. / SPIE et al. | 1999
- 821
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Effect of mask critical dimension error for subquarter-micron contact holeKim, Hung-Eil / Chun, Jun-Sung / Barnett, Stanley / Shih, James et al. | 1999
- 821
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Effect of mask critical dimension error for subquarter-micron contact hole [3679-87]Kim, H.-E. / Chun, J.-S. / Barnett, S. / Shih, J. / SPIE et al. | 1999
- 827
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Lithographic implications for Cu/low-k integration [3679-89]Mih, R. D. / Chen, N. / Jantzen, K. R. / Marsh, J. T. / SPIE et al. | 1999
- 827
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Lithographic implications for Cu/low-k integrationMih, Rebecca D. / Chen, Nora / Jantzen, Kenneth R. / Marsh, James T. / Schneider, Steven et al. | 1999
- 839
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Approach to pattern aspect ratio controlThomas, Alan C. / Zach, Franz X. / Wong, Alfred K. K. / Ferguson, Richard A. / Samuels, Donald J. / Longo, Rosemary / Zhu, John / Feild, Christopher et al. | 1999
- 839
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Approach to pattern aspect ratio control [3679-90]Thomas, A. C. / Zach, F. X. / Wong, A. K. / Ferguson, R. A. / SPIE et al. | 1999
- 847
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Optimization criteria for SRAM design: lithography contributionCole, Daniel C. / Bula, Orest / Conrad, Edward W. / Coops, Daniel S. / Leipold, William C. / Mann, Randy W. / Oppold, Jeffrey H. et al. | 1999
- 847
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Optimization criteria for SRAM design: lithography contribution [3679-91]Cole, D. C. / Bula, O. / Conrad, E. W. / Coops, D. S. / SPIE et al. | 1999
- 860
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Illumination condition and mask bias for 0.15-μm pattern with KrF and ArF lithographyTabuchi, Hiroki / Shichijo, Y. / Oka, N. / Takenaka, N. / Iguchi, K. et al. | 1999
- 860
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Illumination condition and mask bias for 0.15-m pattern with KrF and ArF lithography [3679-15]Tabuchi, H. / Shichijo, Y. / Oka, N. / Takenaka, N. / SPIE et al. | 1999
- 872
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Challenge to 0.13-μm device patterning using KrFKim, Insung / Lee, Junghyun / Cha, DongHo / Park, Joonsoo / Cho, Hanku / Moon, Joo-Tae et al. | 1999
- 872
-
Challenge to 0.13-m device patterning using KrF [3679-93]Kim, I.-S. / Lee, J.-H. / Cha, D.-H. / Park, J.-S. / SPIE et al. | 1999
- 882
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Intrawafer CD control in state-of-the-art lithography [3679-94]Pollentier, I. K. / Baerts, C. / Marschner, T. / Ronse, K. / SPIE et al. | 1999
- 882
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Intrawafer CD control in state-of-the-art lithographyPollentier, Ivan K. / Baert, Christiaan / Marschner, Thomas / Ronse, Kurt G. / Grozev, Grozdan / Reybrouck, Mario et al. | 1999
- 893
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New trends in Brunner's relation: dielectric levels [3679-95]Trouiller, Y. / Didiergeorges, A. / Fanget, G. L. / Laviron, C. / SPIE et al. | 1999
- 893
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New trends in Brunner's relation: dielectric levelsTrouiller, Yorick / Didiergeorges, Anne / Fanget, Gilles L. / Laviron, Cyrille / Comboure, Corinne / Quere, Yves et al. | 1999
- 905
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Optimization of substrate reflectivity, resist thickness, and resist absorption for CD control and resolutionvan Wingerden, Johannes et al. | 1999
- 905
-
Optimization of substrate reflectivity, resist thickness, and resist absorption for CD control and resolution [3679-96]Van Wingerden, J. / SPIE et al. | 1999
- 914
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Extending the limits of i-line lithography for via layers and minimization of dense-iso biasSubramanian, Ramkumar / Spence, Chris A. / Capodieci, Luigi / Werner, Thomas / Gallardo, Ernesto et al. | 1999
- 914
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Extending the limits of i-line lithography for via layers and minimization of dense-iso bias [3679-97]Subramanian, R. / Spence, C. A. / Capodieci, L. / Werner, T. / SPIE et al. | 1999
- 923
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Antireflection strategies for sub-0.18-m dual-damascene structure patterning in KrF 248-nm lithography [3679-98]Chou, S.-Y. / Wang, C.-M. / Hsia, C.-C. / Chen, L.-J. / SPIE et al. | 1999
- 923
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Antireflection strategies for sub-0.18-μm dual-damascene structure patterning in KrF 248-nm lithographyChou, Shuo-Yen / Wang, Chien-Ming / Hsia, Chin C. / Chen, Li-Jui / Hwang, Gue-Wuu / Lee, Shyh-Dar / Lou, Jen-Chung et al. | 1999
- 932
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Comparison of CD variation between organic and inorganic bottom antireflective coating on topographic substrates [3679-99]Nakaoka, S. / Watanabe, H. / Okuda, Y. / SPIE et al. | 1999
- 932
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Comparison of CD variation between organic and inorganic bottom antireflective coating on topographic substratesNakaoka, Satoko / Watanabe, Hisashi / Okuda, Yoshimitsu et al. | 1999
- 942
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0.18-μm lithography strategies: 248-nm DUV step-and-scanner and advanced chemical amplified resistLin, Qunying / Cheng, Alex T. / Ma, Wei Wen / Cheng, John J. et al. | 1999
- 942
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0.18-m lithography strategies: 248-nm DUV step-and-scanner and advanced chemical amplified resist [3679-100]Lin, Q. Y. / Cheng, A. / Ma, W. W. / Cheng, J. J. / SPIE et al. | 1999
- 953
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New application of negative DUV resist for topographical metal layer microlithography [3679-103]Chen, Y.-T. / Chu, R. / SPIE et al. | 1999
- 953
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New application of negative DUV resist for topographical metal layer microlithographyChen, Yung-Tin / Chu, Ronfu et al. | 1999
- 962
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Effect of exposure tool illumination settings and objective numerical aperture on the standing wave period within photoresist [3679-104]Robertson, S. A. / Linskens, F. T. G. M. / Szmanda, C. R. / Dempsey, K. J. / SPIE et al. | 1999
- 962
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Effect of exposure tool illumination settings and objective numerical aperture on the standing wave period within photoresistRobertson, Stewart A. / Linskens, Frank T. / Szmanda, Charles R. / Dempsey, Kevin J. et al. | 1999
- 976
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0.18-μm technology at contact level: deep-UV process development by tuning NA/o and using a bottom antireflective coatingAmblard, Gilles R. / Chollet, Jean-Paul E. et al. | 1999
- 976
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0.18-m technology at contact level: deep-UV process development by tuning NA/O and using a bottom antireflective coating [3679-105]Amblard, G. R. / Chollet, J. P. / SPIE et al. | 1999
- 990
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ARC technology to minimize CD variations during emitter structuring: experiment and simulationBauer, Joachim J. / Drescher, G. / Jagdhold, Ulrich A. / Haak, Ulrich / Skaloud, T. et al. | 1999
- 990
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ARC technology to minimize CD variations during emitter structuring: experiment and simulation [3679-106]Bauer, J. J. / Drescher, G. / Jagdhold, U. A. / Haak, U. / SPIE et al. | 1999
- 1001
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Advanced resist coating technology for mask manufacturing process [3679-107]Kushida, Y. / Usui, Y. / Kobayashi, T. / Shigematsu, K. / SPIE et al. | 1999
- 1001
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Advanced resist coating technology for mask manufacturing processKushida, Yasuyuki / Usui, Youichi / Kobayashi, Toru / Shigematsu, Kazumasa et al. | 1999
- 1009
-
Quality and performance of late Ga+ ion FIB mask repair with the gas assist in DUV processBae, Sang-Man / Koo, Youngmo / Ko, Kwang-Yoon / Kim, Bong-Ho / Ahn, Dong-Jun et al. | 1999
- 1009
-
Quality and performance of late Ga+ ion FIB mask repair with the gas assist in DUV process [3679-108]Bae, S. M. / Koo, Y. M. / Koh, K. Y. / Kim, B.-H. / SPIE et al. | 1999
- 1019
-
Characterizing absorption and total scattering losses on optical components for 193-nm wafer steppers [3679-111]Mann, K. R. / Apel, O. / Eva, E. / SPIE et al. | 1999
- 1019
-
Characterizing absorption and total scattering losses on optical components for 193-nm wafer steppersMann, Klaus R. / Apel, Oliver / Eva, Eric et al. | 1999
- 1030
-
Performance characteristics of ultranarrow ArF laser for DUV lithography [3679-112]Ershov, A. I. / Besaucele, H. / Das, P. P. / SPIE et al. | 1999
- 1030
-
Performance characteristics of ultranarrow ArF laser for DUV lithographyErshov, Alexander I. / Besaucele, Herve / Das, Palash P. et al. | 1999
- 1038
-
Production-ready 2-kHz KrF excimer laser for DUV lithographyMyers, Dave / Watson, Tom A. / Das, Palash P. / Padmabandu, Gunasiri G. / Zambon, Paolo / Hofmann, Thomas / Partlo, William N. / Hysham, Christopher / Dunning, Richard et al. | 1999
- 1038
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Production-ready 2-kHz KrF excimer laser for DUV lithography [3679-114]Myers, D. / Watson, T. A. / Das, P. P. / Padmabandu, G. G. / SPIE et al. | 1999
- 1050
-
High-repetition-rate excimer lasers for DUV lithography [3679-115]Stamm, U. / Paetzel, R. / Bragin, I. / Berger, V. / SPIE et al. | 1999
- 1050
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High-repetition-rate excimer lasers for DUV lithographyStamm, Uwe / Paetzel, Rainer / Bragin, Igor / Berger, Vincent / Klaft, Ingo / Kleinschmidt, Juergen / Osmanov, Rustem / Schroeder, Thomas / Vogler, Klaus / Zschocke, Wolfgang et al. | 1999
- 1058
-
Billion-level durable ArF excimer laser with highly stable energyWakabayashi, Osamu / Enami, Tatsuo / Ohta, Takeshi / Tanaka, Hirokazu / Kubo, Hirokazu / Suzuki, Toru / Terashima, Katsutomo / Sumitani, Akira / Mizoguchi, Hakaru et al. | 1999
- 1058
-
Billion-level durable ArF excimer laser with highly stable energy [3679-116]Wakabayashi, O. / Enami, T. / Ohta, T. / Tanaka, H. / SPIE et al. | 1999
- 1069
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Line-narrowed ArF excimer laser for 193-nm lithography [3679-117]Saito, T. / Mitsuhashi, K. / Arai, M. / Seki, K. / SPIE et al. | 1999
- 1069
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Line-narrowed ArF excimer laser for 193-nm lithographySaito, Takashi / Mitsuhashi, Ken-ichi / Arai, Motohiro / Seki, Kyouhei / Tada, Akifumi / Igarashi, Tatsushi / Hotta, Kazuaki et al. | 1999
- 1076
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Performance of a highly stable 2-kHz operation KrF laserEnami, Tatsuo / Nakano, Masaki / Watanabe, Takayuki / Ohbo, Ayako / Hori, Tsukasa / Ito, Takashi / Nishisaka, Toshihiro / Sumitani, Akira / Wakabayashi, Osamu / Mizoguchi, Hakaru et al. | 1999
- 1076
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Performance of a highly stable 2-kHz-operation KrF laser [3679-118]Enami, T. / Nakano, M. / Watanabe, T. / Ohbo, A. / SPIE et al. | 1999
- 1085
-
Silicon-oxynitride films prepared for 157-nm attenuated phase-shifting masks [3679-119]Chen, H. L. / Wang, L. A. / Yeh, L. S. / Lai, F. D. / SPIE et al. | 1999
- 1085
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Silicon-oxynitride films prepared for 157-nm attenuated phase-shifting masksChen, Hsuen-Li / Wang, Lon A. / Yeh, L. S. / Lai, F. D. et al. | 1999
- 1093
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Application of the hybrid finite-difference time-domain method to modeling curved surfaces in three-dimensional lithography simulation [3679-120]Yeung, M. S. / Barouch, E. / SPIE et al. | 1999
- 1093
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Application of the hybrid finite-difference time-domain method to modeling curved surfaces in three-dimensional lithography simulationYeung, Michael S. / Barouch, Eytan et al. | 1999
- 1104
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Effect of 3D diffusion on photolithographic simulation resultsHansen, Steven G. et al. | 1999
- 1104
-
Effect of 3D diffusion on photolithographic simulation results [3679-121]Hansen, S. G. / SPIE et al. | 1999
- 1116
-
Method for choosing "generic" photoresist simulation parametersHansen, Steven G. et al. | 1999
- 1116
-
Method for choosing "generic" photoresist simulation parameters [3679-122]Hansen, S. G. / SPIE et al. | 1999
- 1129
-
Excimer-laser-induced absorption in fused silicaMoll, Johannes / Schermerhorn, Paul M. et al. | 1999
- 1129
-
Excimer-laser-induced absorption in fused silica [3679-123]Moll, J. / Schermerhorn, P. M. / SPIE et al. | 1999
- 1137
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Long-term 193-nm laser-induced degradation of fused silica and calcium fluoride [3679-128]Liberman, V. / Rothschild, M. / Sedlacek, J. H. C. / Uttaro, R. S. / SPIE et al. | 1999
- 1137
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Long-term 193-nm laser-induced degradation of fused silica and calcium fluorideLiberman, Vladimir / Rothschild, Mordechai / Sedlacek, Jan H. C. / Uttaro, Ray S. / Bates, Allen K. / Van Peski, Chris K. et al. | 1999
- 1146
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Index of refraction and its temperature dependence of calcium fluoride near 157 nm [3679-129]Burnett, J. H. / Gupta, R. / Griesmann, U. / Jou, T. E. / SPIE et al. | 1999
- 1146
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Index of refraction and its temperature dependence of calcium fluoride near 157 nmBurnett, John H. / Gupta, Rajeev / Griesmann, Ulf / Jou, Ted E. et al. | 1999
- 1153
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Studies of nitride- and oxide-based materials as absorptive shifters for embedded attenuated phase-shifting mask in 193 nm [3679-124]Lin, C. / Chang, K. / Lee, M. / Loong, W. / SPIE et al. | 1999
- 1153
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Studies of nitride- and oxide-based materials as absorptive shifters for embedded attenuated phase-shifting mask in 193 nmLin, Cheng-ming / Chang, Keh-wen / Lee, Ming-der / Loong, Wen-An et al. | 1999
- 1159
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Optimization of a mix-and-match fab: noninteger nonconcentric field overlay [3679-126]Notarfrancesco, M. E. / Herrington, P. T. / Pelligrini, J. / SPIE et al. | 1999
- 1159
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Optimization of a mix-and-match fab: noninteger nonconcentric field overlayNotarfrancesco, Mark E. / Herrington, Paul T. / Pelligrini, Joseph et al. | 1999
- 1170
-
Measurement of pitch dependency of overlay errors under OAI by using an electric CD measurement technique [3679-127]Seong, N. / Kim, H. / Cho, H.-K. / Moon, J.-T. / SPIE et al. | 1999
- 1170
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Measurement of pitch dependency of overlay errors under OAI by using an electric CD measurement techniqueSeong, Nakgeuon / Kim, Hochul / Cho, Hanku / Moon, Joo-Tae / Lee, Sang Min et al. | 1999
-
Hierarchical processing for accurate optical proximity correction for 1-Gb DRAM metal layers [3679-59]Kobayashi, S. / Uno, T. / Yamamoto, K. / Tanaka, S. / SPIE et al. | 1999