Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si (English)
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- New search for: Lubbers, M.
- New search for: Mimkes, J.
- New search for: Schikora, D.
- New search for: Lischka, K.
- New search for: Kriegseis, W.
- New search for: Burkhardt, W.
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- New search for: Richter, A.
- New search for: Busch, J.
- New search for: Schottker, B.
- New search for: Lubbers, M.
- New search for: Mimkes, J.
- New search for: Schikora, D.
- New search for: Lischka, K.
- New search for: Kriegseis, W.
- New search for: Burkhardt, W.
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In:
GaN and related alloys
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W3.81.1-W3.82.0
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2000
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ISBN:
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ISSN:
- Conference paper / Print
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Title:Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
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Contributors:As, D. J. ( author ) / Richter, A. ( author ) / Busch, J. ( author ) / Schottker, B. ( author ) / Lubbers, M. ( author ) / Mimkes, J. ( author ) / Schikora, D. ( author ) / Lischka, K. ( author ) / Kriegseis, W. ( author ) / Burkhardt, W. ( author )
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Conference:Symposium, GaN and related alloys ; 1999 ; Boston, MA
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Published in:GaN and related alloys ; W3.81.1-W3.82.0MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 595 ; W3.81.1-W3.82.0
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Publisher:
- New search for: Materials Research Society
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Place of publication:Warrendale, Pa.
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Publication date:2000-01-01
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Size:W3.81.1-W3.82.0
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Remarks:Includes bibliographical references and index
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- W1.2.1
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Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding LayersKoike, M. / Yamasaki, S. / Tezen, Y. / Nagai, S. / Iwayama, S. / Kojima, A. / Materials Research Society et al. | 2000
- W1.3.1
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Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on SapphireHansen, M. / Fini, P. / Zhao, L. / Abare, A. / Coldren, L. A. / Speck, J. S. / DenBaars, S. P. / Materials Research Society et al. | 2000
- W1.4.1
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Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser DiodesHansen, M. / Abare, A. C. / Kozodoy, P. / Katona, T. M. / Craven, M. D. / Speck, J. S. / Mishra, U. K. / Coldren, L. A. / DenBaars, S. P. / Materials Research Society et al. | 2000
- W1.6.1
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Spatially Resolved Electroluminescence of InGaN-MQW-LEDsSchwegler, V. / Seyboth, M. / Kirchner, C. / Scherer, M. / Kamp, M. / Fischer, P. / Christen, J. / Zacharias, M. / Materials Research Society et al. | 2000
- W1.8.1
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High Reflectance III-Nitride Bragg Reflectors Grown by Molecular Beam EpitaxyNg, H. M. / Moustakas, T. D. / Materials Research Society et al. | 2000
- W1.9.1
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High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode ArraysBrown, J. D. / Matthews, J. / Harney, S. / Boney, J. / Schetzina, J. F. / Benson, J. D. / Dang, K. V. / Nohava, T. / Yang, W. / Krishnankutty, S. et al. | 2000
- W1.10.1
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High-Quality Al~xGa~1~-~xN Using Low Temperature-Interlayer and its Application to UV DetectorIwaya, M. / Terao, S. / Hayashi, N. / Kashima, T. / Detchprohm, T. / Amano, H. / Akasaki, I. / Hirano, A. / Pernot, C. / Materials Research Society et al. | 2000
- W2.1.1
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Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) SubstratesDavis, R. F. / Gehrke, T. / Linthicum, K. J. / Zheleva, T. S. / Rajagopal, P. / Zorman, C. A. / Mehregany, M. / Materials Research Society et al. | 2000
- W2.3.1
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Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPEMiyake, H. / Yamaguchi, M. / Haino, M. / Motogaito, A. / Hiramatsu, K. / Nambu, S. / Kawaguchi, Y. / Sawaki, N. / Iyechika, Y. / Maeda, T. et al. | 2000
- W2.4.1
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Advanced PENDEOEPITAXY™ of GaN and Al~xGa~1~-~xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor DepositionGehrke, T. / Linthicum, K. J. / Rajagopal, P. / Preble, E. A. / Davis, R. F. / Materials Research Society et al. | 2000
- W2.5.1
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A TEM Study of GaN Grown by ELO on (0001) 6H-SiCRuterana, P. / Beaumont, B. / Gibart, P. / Melnik, Y. / Materials Research Society et al. | 2000
- W2.6.1
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Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase EpitaxyKuan, T. S. / Inoki, C. K. / Hsu, Y. / Harris, D. L. / Zhang, R. / Gu, S. / Kuech, T. F. / Materials Research Society et al. | 2000
- W2.7.1
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GaN and AIN Layers Grown by Nano Epitaxial Lateral Overgrowth Technique on Porous SubstratesMynbaeva, M. / Titkov, A. / Kryzhanovski, A. / Zubrilov, A. / Ratnikov, V. / Davydov, V. / Kuznetsov, N. / Mynbaev, K. / Stepanov, S. / Cherenkov, A. et al. | 2000
- W2.8.1
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Mass Transport, Faceting and Behavior of Dislocations in GaNNitta, S. / Kashima, T. / Kariya, M. / Yukawa, Y. / Yamaguchi, S. / Amano, H. / Akasaki, I. / Materials Research Society et al. | 2000
- W2.11.1
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Dislocation Arrangement in a Thick LEO GaN Film on SapphireDunn, K. A. / Babcock, S. E. / Stone, D. S. / Matyi, R. J. / Zhang, L. / Kuech, T. F. / Materials Research Society et al. | 2000
- W3.3.1
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Polarity Determination for MOCVD Growth of GaN on Si(111) by convergent Beam Electron DiffractionZhao, L. / Marchand, H. / Fini, P. / DenBaars, S. P. / Mishra, U. K. / Speck, J. S. / Materials Research Society et al. | 2000
- W3.8.1
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Structural Properties of Laterally Overgrown GaNZhang, R. / Shi, Y. / Zhou, Y. G. / Shen, B. / Zheng, Y. D. / Kuan, T. S. / Gu, S. L. / Zhang, L. / Hansen, D. M. / Kuech, T. F. et al. | 2000
- W3.12.1
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Integration of PLZT and BST Family Oxides with GaNOsinsky, A. V. / Fuflyigin, V. N. / Wang, F. / Vakhutinsky, P. I. / Norris, P. E. / Materials Research Society et al. | 2000
- W3.13.1
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HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire SubstratesParillaud, O. / Wagner, V. / Buhlmann, H.-J. / Lelarge, F. / Ilegems, M. / Materials Research Society et al. | 2000
- W3.14.1
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Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown `Templates'Paskova, T. / Tungasmita, S. / Valcheva, E. / Svedberg, E. B. / Arnaudov, B. / Evtimova, S. / Persson, P. A. / Henry, A. / Beccard, R. / Heuken, M. et al. | 2000
- W3.15.1
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The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GaNGu, S. / Zhang, R. / Sun, J. / Zhang, L. / Kuech, T. F. / Materials Research Society et al. | 2000
- W3.16.1
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Visible and Infrared Emission of GaN:Er Thin Films Grown by SputteringChen, H. / Gurumurugan, K. / Kordesch, M. E. / Jadwisienczak, W. M. / Lozykowski, H. J. / Materials Research Society et al. | 2000
- W3.18.1
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Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source PrecursorsFischer, R. A. / Wohlfart, A. / Devi, A. / Rogge, W. / Materials Research Society et al. | 2000
- W3.24.1
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Growth and Characterization of GaN Thin Films on Si(111) Substrates Using SiC Intermediate LayerLim, K. Y. / Lee, K. J. / Park, C. I. / Kim, K. C. / Choi, S. C. / Lee, W.-H. / Suh, E.-K. / Yang, G. M. / Nahm, K. S. / Materials Research Society et al. | 2000
- W3.26.1
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Optical Properties of Manganese Doped Amorphous and Crystalline Aluminum Nitride FilmsCaldwell, M. L. / Richardson, H. H. / Kordesch, M. E. / Materials Research Society et al. | 2000
- W3.27.1
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A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the In Incorporation Efficiency in In~xGa~1~-~x/GaN Heterostructures Grown by RF Plasma-Assisted Molecular Beam EpitaxyO'Steen, M. L. / Fedler, F. / Hauenstein, R. J. / Materials Research Society et al. | 2000
- W3.29.1
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Surface Morphology of GaN: Flat Versus Vicinal SurfacesXie, M. H. / Seutter, S. M. / Zheng, L. X. / Cheung, S. H. / Ng, Y. F. / Wu, H. / Tong, S. Y. / Materials Research Society et al. | 2000
- W3.30.1
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Growth of InN by MBEChen, W.-L. / Gunshor, R. L. / Han, J. / Higashimine, K. / Otsuka, N. / Materials Research Society et al. | 2000
- W3.31.1
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Evidence from EELS of Oxygen in the Nucleation Layer of an MBE Grown III-N HEMTEustis, T. J. / Silcox, J. / Murphy, M. J. / Schaff, W. J. / Materials Research Society et al. | 2000
- W3.33.1
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Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma SourcesPtak, A. J. / Ziemer, K. S. / Holbert, L. J. / Stinespring, C. D. / Myers, T. H. / Materials Research Society et al. | 2000
- W3.34.1
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The Effect of the Buffer Layer on the Structure, Mobility and Photoluminescence of MBE Grown GaNSharma, N. / Tricker, D. / Keast, V. / Hooper, S. / Heffernan, J. / Barnes, J. / Kean, A. / Humphreys, C. / Materials Research Society et al. | 2000
- W3.35.1
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MBE Growth Of GaN Films In Presence Of Surfactants: The Effect Of Mg And SiMula, G. / Daudin, B. / Adelmann, C. / Peyla, P. / Materials Research Society et al. | 2000
- W3.36.1
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The Effect of Al in Plasma-Assisted MBE-Grown GaNZsebok, O. / Thordson, J. V. / Zhao, Q. / Sodervall, U. / Ilver, L. / Andersson, T. G. / Materials Research Society et al. | 2000
- W3.37.1
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Structure and Morphology Characters of GaN Grown by ECR-MBE Using Hydrogen-Nitrogen Mixed Gas PlasmaAraki, T. / Chiba, Y. / Nanishi, Y. / Materials Research Society et al. | 2000
- W3.40.1
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Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of TemperatureFernandez, J. R. L. / Chitta, V. A. / Abramof, E. / da Silva, A. F. / Leite, J. R. / Tabata, A. / As, D. J. / Frey, T. / Schikora, D. / Lischka, K. et al. | 2000
- W3.41.1
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Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor DepositionYoshida, S. / Kimura, T. / Wu, J. / Kikawa, J. / Onabe, K. / Shiraki, Y. / Materials Research Society et al. | 2000
- W3.43.1
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Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using TertiarybutylhydrazineSchmidtling, T. K. / Klein, M. / Pohl, U. W. / Richter, W. / Materials Research Society et al. | 2000
- W3.47.1
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TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBESarney, W. L. / Salamanca-Riba, L. / Ramachandran, V. / Feenstra, R. M. / Greve, D. W. / Materials Research Society et al. | 2000
- W3.50.1
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Microstructure and Physical Properties of GaN Films on Sapphire SubstratesChen, Z. / Zhang, R. / Zhu, J. / Shen, B. / Zhou, Y. / Chen, P. / Li, W. / Shi, Y. / Gu, S. / Zheng, Y.-D. et al. | 2000
- W3.52.1
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Structural Evolution of GaN During Initial Stage MOCVD GrowthKim, C. C. / Je, J. H. / Yi, M.-S. / Noh, D. Y. / Materials Research Society et al. | 2000
- W3.54.1
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Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPEGiannini, C. / Carlino, E. / Tapfer, L. / Hohnsdorf, F. / Koch, J. / Stolz, W. / Materials Research Society et al. | 2000
- W3.55.1
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Formation and Stability of the Prismatic Stacking Fault in Wurtzite (Al,Ga,In) NitridesRuterana, P. / Bere, A. / Nouet, G. / Materials Research Society et al. | 2000
- W3.56.1
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Threading Dislocation Density Reduction in GaN/Sapphire HeterostructuresKvit, A. / Sharma, A. K. / Narayan, J. / Materials Research Society et al. | 2000
- W3.58.1
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Microstructural Investigations on GaN Films Grown by Laser Induced Molecular Beam EpitaxyZhou, H. / Phillipp, F. / Gross, M. / Schroder, H. / Materials Research Society et al. | 2000
- W3.64.1
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GaN Decomposition in AmmoniaKoleske, D. D. / Wickenden, A. E. / Henry, R. L. / Materials Research Society et al. | 2000
- W3.65.1
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Surface Activity of Magnesium During GaN Molecular Beam Epitaxial GrowthRamachandran, V. / Feenstra, R. M. / Northrup, J. E. / Greve, D. W. / Materials Research Society et al. | 2000
- W3.72.1
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Simulations of Defect-Interface Interactions in GaNChisholm, J. A. / Bristowe, P. D. / Materials Research Society et al. | 2000
- W3.77.1
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Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al~xGa~1~-~xN Layers Grown by MOCVDMazur, J. H. / Benamara, M. / Liliental-Weber, Z. / Swider, W. / Washburn, J. / Eiting, C. J. / Dupuis, R. D. / Materials Research Society et al. | 2000
- W3.80.1
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Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase EpitaxyKorotkov, R. Y. / Wessels, B. W. / Materials Research Society et al. | 2000
- W3.81.1
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Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by SiAs, D. J. / Richter, A. / Busch, J. / Schottker, B. / Lubbers, M. / Mimkes, J. / Schikora, D. / Lischka, K. / Kriegseis, W. / Burkhardt, W. et al. | 2000
- W3.82.1
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Activation of Beryllium-Implanted GaN by Two-Step AnnealingSun, Y. / Tan, L. S. / Chua, S. J. / Prakash, S. / Materials Research Society et al. | 2000
- W3.84.1
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Co-Doping Characteristics of Si and Zn with Mg in p-Type GaNKim, K. S. / Oh, C. S. / Han, M. S. / Kim, C. S. / Yang, G. M. / Yang, J. W. / Hong, C.-H. / Youn, C. J. / Lim, K. Y. / Lee, H. J. et al. | 2000
- W3.85.1
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Efficient Acceptor Activation in Al~xGa~1~-~xN/GaN Doped SuperlatticesGoepfert, I. D. / Schubert, E. F. / Osinsky, A. / Norris, P. E. / Materials Research Society et al. | 2000
- W3.87.1
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Structural and Optical Property Investigations on Mg-Alloying in Epitaxial Zinc Oxide Films on SapphireSharma, A. K. / Jin, C. / Kvit, A. / Narayan, J. / Muth, J. F. / Teng, C. W. / Kolbas, R. M. / Holland, O. W. / Materials Research Society et al. | 2000
- W3.89.1
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Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal MicroscopeFlorescu, D. I. / Asnin, V. A. / Mourokh, L. G. / Pollak, F. H. / Molnar, R. J. / Materials Research Society et al. | 2000
- W3.90.1
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High Temperature Hardness of Bulk Single Crystal GaNYonenaga, I. / Hoshi, T. / Usui, A. / Materials Research Society et al. | 2000
- W4.4.1
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AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical PropertiesPiner, E. L. / Keogh, D. M. / Flynn, J. S. / Redwing, J. M. / Materials Research Society et al. | 2000
- W4.5.1
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Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?Deng, J. / Gaska, R. / Shur, M. S. / Khan, M. A. / Yang, J. W. / Materials Research Society et al. | 2000
- W4.7.1
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Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect TransistorsMaeda, N. / Saitoh, T. / Tsubaki, K. / Nishida, T. / Kobayashi, N. / Materials Research Society et al. | 2000
- W4.8.1
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High-Temperature Reliability of GaN Electronic DevicesYoshida, S. / Suzuki, J. / Materials Research Society et al. | 2000
- W4.9.1
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Fabrication and Characterization of GaN Junction Field Effect TransistorsZhang, L. / Lester, L. F. / Bacal, A. G. / Shul, R. J. / Chang, P. C. / Willison, C. G. / Mishra, U. K. / DenBaars, S. P. / Zolper, J. C. / Materials Research Society et al. | 2000
- W5.4.1
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The Atomic Structure of Extended Defects in GaNRuterana, P. / Nouet, G. / Materials Research Society et al. | 2000
- W5.5.1
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TEM Study of Bulk AlN Growth by Physical Vapor TransportSarney, W. L. / Salamanca-Riba, L. / Hossain, T. / Zhou, P. / Jayatirtha, H. N. / Kang, H. H. / Vispute, R. D. / Spencer, M. / Jones, K. A. / Materials Research Society et al. | 2000
- W5.7.1
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Thermal Expansion of GaN at Low Temperatures - A Comparison of Bulk and Homo- and Heteroepitaxial LayersKirchner, V. / Heinke, H. / Einfeldt, S. / Hommel, D. / Domagala, J. Z. / Leszczynski, M. / Materials Research Society et al. | 2000
- W5.8.1
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The Role of the Multi Buffer Layer Technique on the Structural Quality of GaNBenamara, M. / Liliental-Weber, Z. / Mazur, J. H. / Swider, W. / Washburn, J. / Iwaya, M. / Akasaki, I. / Amano, H. / Materials Research Society et al. | 2000
- W5.9.1
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Physical Properties of Silicon Doped Heteroepitaxial MOCVD Grown GaN: Influence of Doping Level and StressHageman, P. R. / Kirilyuk, V. / Zauner, A. R. A. / Bauhuis, G. J. / Larsen, P. K. / Materials Research Society et al. | 2000
- W5.10.1
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Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron BeamTrager-Cowan, C. / McColl, D. / Sweeney, F. / Grimson, S. T. F. / Treguer, J.-F. / Mohammed, A. / Middleton, P. G. / Manson-Smith, S. K. / O'Donnell, K. P. / Van der Stricht, W. et al. | 2000
- W6.2.1
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MOVPE Growth of Quaternary (Al,Ga,In)N for UV OptoelectronicsHan, J. / Figiel, J. J. / Petersen, G. A. / Myers, S. M. / Crawford, M. H. / Banas, M. A. / Hearne, S. J. / Materials Research Society et al. | 2000
- W6.3.1
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Homoepitaxial Growth on Misoriented GaN Substrates by MOCVDZauner, A. R. A. / Schermer, J. J. / van Enckevort, W. J. P. / Kirilyuk, V. / Weyher, J. L. / Grzegory, I. / Hageman, P. R. / Larsen, P. K. / Materials Research Society et al. | 2000
- W6.5.1
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AlN Wafers Fabricated by Hydride Vapor Phase EpitaxyNikolaev, A. / Nikitina, I. / Zubrilov, A. / Mynbaeva, M. / Melnik, Y. / Dmitriev, V. / Materials Research Society et al. | 2000
- W6.6.1
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GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded TechniqueSukhoveyev, V. A. / Ivantsov, V. A. / Nikitina, I. P. / Babanin, A. I. / Polyakov, A. Y. / Govorkov, A. V. / Smirnov, N. B. / Mil'vidskii, M. G. / Dmitriev, V. A. / Materials Research Society et al. | 2000
- W6.7.1
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Preparation and Characterization of Single-Crystal Aluminum Nitride SubstratesSchowalter, L. J. / Rojo, J. C. / Yakolev, N. / Shusterman, Y. / Dovidenko, K. / Wang, R. / Bhat, I. / Slack, G. A. / Materials Research Society et al. | 2000
- W6.8.1
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Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser DiodesAkasaki, I. / Kamiyama, S. / Detchprohm, T. / Takeuchi, T. / Amano, H. / Materials Research Society et al. | 2000
- W8.1.1
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High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN LayerJurkovic, M. J. / Li, L. K. / Turk, B. / Wang, W. I. / Syed, S. / Simonian, D. / Stormer, H. L. / Materials Research Society et al. | 2000
- W8.3.1
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High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with AmmoniaNikishin, S. A. / Faleev, N. N. / Antipov, V. G. / Francoeur, S. / de Peralta, L. G. / Seryogin, G. A. / Holtz, M. / Prokofyeva, T. I. / Chu, S. N. G. / Zubrilov, A. S. et al. | 2000
- W8.4.1
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MBE Growth of Nitride-Arsenide Materials for Long Wavelength OptoelectronicsSpruytte, S. G. / Coldren, C. W. / Marshall, A. F. / Larson, M. C. / Harris, J. S. / Materials Research Society et al. | 2000
- W9.3.1
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Structural and Electronic Properties of Line Defects in GaNElsner, J. / Blumenau, A. T. / Frauenheim, T. / Jones, R. / Heggie, M. I. / Materials Research Society et al. | 2000
- W9.4.1
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Simulation of H Behavior in p-GaN(Mg) at Elevated TemperaturesMyers, S. M. / Wright, A. F. / Petersen, G. A. / Seager, C. H. / Crawford, M. H. / Wampler, W. R. / Han, J. / Materials Research Society et al. | 2000
- W9.7.1
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Mg Segregation, Difficulties of P-Doping in GaNLiliental-Weber, Z. / Benamara, M. / Swider, W. / Washburn, J. / Grzegory, I. / Porowski, S. / Dupuis, R. D. / Eiting, C. J. / Materials Research Society et al. | 2000
- W9.8.1
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Optical Activation Behavior of Ion Implanted Acceptor Species in GaNSkromme, B. J. / Martinez, G. L. / Materials Research Society et al. | 2000
- W10.3.1
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Characteristics of Ti/Pt/Au Ohmic Contacts on p-Type GaN/Al~xGA~1~-~xN SuperlatticesZhou, L. / Khan, F. / Ping, A. T. / Osinski, A. / Adesida, I. / Materials Research Society et al. | 2000
- W10.4.1
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High-Quality Non-Alloyed Pt Ohmic Contacts to p-Type GaN Using Two-step Surface TreatmentJang, J.-S. / Park, S.-J. / Seong, T.-Y. / Materials Research Society et al. | 2000
- W10.5.1
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Electrical Measurements in GaN: Point Defects and DislocationsLook, D. C. / Fang, Z. / Polenta, L. / Materials Research Society et al. | 2000
- W10.6.1
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Properties and Effects of Hydrogen in GaNPearton, S. J. / Cho, H. / Ren, F. / Chyi, J.-I. / Han, J. / Wilson, R. G. / Materials Research Society et al. | 2000
- W10.7.1
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Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaNWampler, W. R. / Barbour, J. C. / Seager, C. H. / Myers, S. M. / Wright, A. F. / Han, J. / Materials Research Society et al. | 2000
- W10.8.1
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Surface Conversion Effects in Plasma-Damaged p-GaNCao, X. A. / Pearton, S. J. / Dang, G. T. / Zhang, A. P. / Ren, F. / Shul, R. J. / Zhang, L. / Hickman, R. / Van Hove, J. M. / Materials Research Society et al. | 2000
- W10.9.1
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Zirconium Mediated Hydrogen Outdiffusion from p-GaNKaminska, E. / Piotrowska, A. / Barcz, A. / Jasinski, J. / Zielinski, M. / Golaszewska, K. / Davis, R. F. / Goldys, E. / Tomsia, K. / Materials Research Society et al. | 2000
- W11.1.1
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A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire SubstratesSampath, A. V. / Misra, M. / Seth, K. / Fedyunin, Y. / Ng, H. M. / Iliopoulos, E. / Feit, Z. / Moustakas, T. D. / Materials Research Society et al. | 2000
- W11.2.1
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Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam EpitaxyMisra, M. / Sampath, A. V. / Moustakas, T. D. / Materials Research Society et al. | 2000
- W11.3.1
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Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS DevicesVispute, R. D. / Patel, A. / Baynes, K. / Ming, B. / Sharma, R. P. / Venkatesan, T. / Scozzie, C. J. / Lelis, A. / Zheleva, T. / Jones, K. A. et al. | 2000
- W11.5.1
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Fabrication and Characterization of Metal-Ferroelectric-GaN StructuresLi, W. P. / Zhang, R. / Yin, J. / Liu, X. H. / Zhou, Y. G. / Shen, B. / Chen, P. / Chen, Z. Z. / Shi, Y. / Jiang, R. L. et al. | 2000
- W11.8.1
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Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN HeterostructuresMichel, A. / Hanser, D. / Davis, R. F. / Qiao, D. / Lau, S. S. / Yu, L. S. / Sun, W. / Asbeck, P. / Materials Research Society et al. | 2000
- W11.9.1
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Low-Frequency Noise in SiO2/AlGaN/GaN Heterostructures on SiC and Sapphire SubstratesPala, N. / Gaska, R. / Shur, M. / Yang, J. W. / Khan, M. A. / Materials Research Society et al. | 2000
- W11.10.1
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Electrical Transport of an AlGaN/GaN Two-Dimensional Electron GasSaxler, A. / Debray, P. / Perrin, R. / Elhamri, S. / Mitchel, W. C. / Elsass, C. R. / Smorchkova, I. P. / Heying, B. / Haus, E. / Fini, P. et al. | 2000
- W11.12.1
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Correlation Between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity In AlGaN/GaN Modulation Doped HeterostructuresLi, J. Z. / Li, J. / Lin, J. Y. / Jiang, H. X. / Materials Research Society et al. | 2000
- W11.13.1
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Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETsFarahmand, M. / Brennan, K. F. / Materials Research Society et al. | 2000
- W11.15.1
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New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect TransistorsAlbrecht, J. D. / Ruden, P. P. / Ancona, M. G. / Materials Research Society et al. | 2000
- W11.16.1
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High-Gain, High-Speed ZnO MSM Ultraviolet PhotodetectorsShen, H. / Wraback, M. / Gorla, C. R. / Liang, S. / Emanetoglu, N. / Liu, Y. / Lu, Y. / Materials Research Society et al. | 2000
- W11.18.1
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Temperature Distribution in InGaN-MQW LEDs Under OperationSchwegler, V. / Seyboth, M. / Schad, S. / Scherer, M. / Kirchner, C. / Kamp, M. / Stempfle, U. / Limmer, W. / Sauer, R. / Materials Research Society et al. | 2000
- W11.21.1
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Electron Beam Pumping in Nitride Vertical Cavities With GaN/A1~0~.~2~5Ga~0~.~7~5Bragg ReflectorsKlausing, H. / Aderhold, J. / Fedler, F. / Mistele, D. / Stemmer, J. / Semchinova, O. / Graul, J. / Danhardt, J. / Panzer, S. / Materials Research Society et al. | 2000
- W11.22.1
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Microstructure-based Lasing in GaN/AlGaN Separate Confinement HeterostructuresBidnyk, S. / Lam, J. B. / Little, B. D. / Gainer, G. H. / Kwon, Y. H. / Song, J. J. / Bulman, G. E. / Kong, H. S. / Materials Research Society et al. | 2000
- W11.25.1
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Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting DiodesKudryashov, V. E. / Mamakin, S. S. / Turkin, A. N. / Yunovich, A. E. / Kovalev, A. N. / Manyakhin, F. I. / Materials Research Society et al. | 2000
- W11.26.1
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Optical Spectroscopy and Composition of InGaNO'Donnell, K. P. / Martin, R. W. / White, M. E. / Jacobs, K. / Van der Stricht, W. / Demeester, P. / Vantomme, A. / Wu, M. F. / Mosselmans, J. F. W. / Materials Research Society et al. | 2000
- W11.28.1
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Sign of the Piezoelectric Field in Asymmetric GaInN/AlGaN/GaN Single and Double Quantum Wells on SiCIm, J. S. / Hangleiter, A. / Off, J. / Scholz, F. / Materials Research Society et al. | 2000
- W11.31.1
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The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase EpitaxyLi, P. / Chua, S. J. / Hao, M. / Wang, W. / Zhang, X. / Sugahara, T. / Sakai, S. / Materials Research Society et al. | 2000
- W11.32.1
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Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric FieldKinoshita, A. / Hirayama, H. / Riblet, P. / Ainoya, M. / Hirata, A. / Aoyagi, Y. / Materials Research Society et al. | 2000
- W11.34.1
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Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam EpitaxyKaschner, A. / Holst, J. / von Gfug, U. / Hoffmann, A. / Bertram, F. / Riemann, T. / Rudloff, D. / Fischer, P. / Christen, J. / Averbeck, R. et al. | 2000
- W11.35.1
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Optical Properties of AlGaN Quantum Well StructuresHirayama, H. / Enomoto, Y. / Kinoshita, A. / Hirata, A. / Aoyagi, Y. / Materials Research Society et al. | 2000
- W11.37.1
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Characterization of InGaN Quantum Wells Grown by Molecular Beam Epitaxy (MBE) Using Ammonia as the Nitrogen SourceSemendy, F. / Li, L. K. / Jurkovic, M. J. / Wang, W. I. / Materials Research Society et al. | 2000
- W11.38.1
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Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In ContentVantomme, A. / Wu, M. F. / Hogg, S. / Langouche, G. / Jacobs, K. / Moerman, I. / White, M. E. / O'Donnell, K. P. / Nistor, L. / Van Landuyt, J. et al. | 2000
- W11.39.1
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Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman SpectroscopySchubert, M. / Kasic, A. / Tiwald, T. E. / Woollam, J. A. / Harle, V. / Scholz, F. / Materials Research Society et al. | 2000
- W11.41.1
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Optical Spectroscopy of InGaN Epilayers in the Low Indium Composition RegimeCrawford, M. H. / Han, J. / Banas, M. A. / Myers, S. M. / Petersen, G. A. / Figiel, J. J. / Materials Research Society et al. | 2000
- W11.42.1
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Electronic Raman Scattering From Mg-Doped Wurtzite GaNTsen, K. T. / Koch, C. / Chen, Y. / Morkoc, H. / Li, J. / Lin, J. Y. / Jiang, H. X. / Materials Research Society et al. | 2000
- W11.44.1
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Photoluminescence Characterization of Mg Implanted GaNRonning, C. / Hofsass, H. C. / Stotzler, A. / Deicher, M. / Carlson, E. P. / Hartlieb, P. J. / Gehrke, T. / Rajagopal, P. / Davis, R. F. / Materials Research Society et al. | 2000
- W11.45.1
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An Investigation of Long and Short Time-Constant Persistent Photoconductivity in Undoped GaN Grown by RF-Plasma Assisted Molecular Beam EpitaxyPtak, A. J. / Stoica, V. A. / Holbert, L. J. / Moldovan, M. / Myers, T. H. / Materials Research Society et al. | 2000
- W11.46.1
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The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN FilmsKuball, M. / Hayes, J. M. / Suski, T. / Jun, J. / Tan, H. H. / Williams, J. S. / Jagadish, C. / Materials Research Society et al. | 2000
- W11.47.1
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Carrier Dynamics Studies of Thick GaN Grown by HVPEBunea, G. E. / Unlu, M. S. / Goldberg, B. B. / Materials Research Society et al. | 2000
- W11.49.1
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Prism Coupling as a Non-Destructive Tool for Optical Characterization of (Al,Ga) Nitride CompoundsDogheche, E. / Belgacem, B. / Remiens, D. / Ruterana, P. / Omnes, F. / Materials Research Society et al. | 2000
- W11.50.1
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Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) SapphireSalviati, G. / Armani, N. / Zanotti-Fregonara, C. / Gombia, E. / Albrecht, M. / Strunk, H. P. / Mayer, M. / Kamp, M. / Gasparotto, A. / Materials Research Society et al. | 2000
- W11.51.1
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A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence SpectroscopyBell, A. / Harrison, I. / Korakakis, D. / Larkins, E. C. / Hayes, J. M. / Kuball, M. / Materials Research Society et al. | 2000
- W11.52.1
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Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on SapphireTiginyanu, I. M. / Kravetsky, I. V. / Pavlidis, D. / Eisenbach, A. / Hildebrandt, R. / Marowsky, G. / Hartnagel, H. L. / Materials Research Society et al. | 2000
- W11.53.1
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Radiative Recombination Between Two-Dimensional Electron Gas and Photoexcited Holes in Modulation-Doped Al~xGa~1~-~xN/GaN HeterostructuresShen, B. / Someya, T. / Moriwaki, O. / Arakawa, Y. / Materials Research Society et al. | 2000
- W11.54.1
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Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function ModelWagner, J. / Ramakrishnan, A. / Obloh, H. / Kunzer, M. / Kohler, K. / Johs, B. / Materials Research Society et al. | 2000
- W11.55.1
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Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial OvergrowthWraback, M. / Shen, H. / Eiting, C. J. / Carrano, J. C. / Dupuis, R. D. / Materials Research Society et al. | 2000
- W11.56.1
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The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/sapphire TemplatesYoung, A. P. / Brillson, L. J. / Naoi, Y. / Tu, C. W. / Materials Research Society et al. | 2000
- W11.57.1
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Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin FilmsCho, Y.-H. / Gainer, G. H. / Lam, J. B. / Song, J. J. / Yang, W. / Jhe, W. / Materials Research Society et al. | 2000
- W11.58.1
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Time-Resolved Spectroscopy of InGaNPophristic, M. / Long, F. H. / Tran, C. / Ferguson, I. T. / Materials Research Society et al. | 2000
- W11.62.1
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Photoluminescence Enhancement and Morphological Properties of Carbon Co-Doped GaN:ErOverberg, M. E. / Abernathy, C. R. / Pearton, S. J. / Wilson, R. G. / Zavada, J. M. / Materials Research Society et al. | 2000
- W11.64.1
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Photoluminescence and Cathodoluminescence of GaN Doped With PrLozykowski, H. J. / Jadwisienczak, W. M. / Brown, I. / Materials Research Society et al. | 2000
- W11.65.1
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Comparison of the Optical Properties of Er^3^+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)Hommerich, U. H. / Seo, J. T. / MacKenzie, J. D. / Abernathy, C. R. / Birkhahn, R. / Steckl, A. J. / Zavada, J. M. / Materials Research Society et al. | 2000
- W11.66.1
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High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl~2/Ar DischargesZhang, A. P. / Dang, G. / Ren, F. / Cao, X. A. / Cho, H. / Lambers, E. S. / Pearton, S. J. / Shul, R. J. / Zhang, L. / Baca, A. G. et al. | 2000
- W11.67.1
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Processing And Device Performance Of GaN Power RectifiersZhang, A. P. / Dang, G. T. / Cao, X. A. / Cho, H. / Ren, F. / Han, J. / Chyi, J.-I. / Lee, C.-M. / Nee, T.-E. / Chuo, C.-C. et al. | 2000
- W11.68.1
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Comparison of Implant Isolation Species for GaN Field-Effect Transistor StructureDang, G. / Cao, X. A. / Ren, F. / Pearton, S. J. / Han, J. / Baca, A. G. / Shul, R. J. / Wilson, R. G. / Materials Research Society et al. | 2000
- W11.69.1
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Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser MicromachiningZhao, Q. / Lukitsch, M. / Xu, J. / Auner, G. / Niak, R. / Kuo, P.-K. / Materials Research Society et al. | 2000
- W11.70.1
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Wet Etching of Ion-Implanted GaN Crystals by AZ-400K PhotoresistCarosella, C. A. / Molnar, B. / Schiestel, S. / Sprague, J. A. / Materials Research Society et al. | 2000
- W11.71.1
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Oxidation of Gallium Nitride Epilayers in Dry OxygenChen, P. / Zhang, R. / Xu, X. F. / Chen, Z. Z. / Zhou, Y. G. / Xie, S. Y. / Shi, Y. / Shen, B. / Gu, S. L. / Huang, Z. C. et al. | 2000
- W11.73.1
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A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaNHwang, J. M. / Hsieh, J. T. / Hwang, H. L. / Hung, W. H. / Materials Research Society et al. | 2000
- W11.74.1
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Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED ApplicationsKim, K. S. / Hong, C.-H. / Lee, W.-H. / Kim, C. S. / Cha, O. H. / Yang, G. M. / Suh, E.-K. / Lim, K. Y. / Lee, H. J. / Cho, H. K. et al. | 2000
- W11.75.1
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The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium NitrideRuterana, P. / Nouet, G. / Kehagias, T. / Komninou, P. / Karakostas, T. / di Forte Poisson, M. A. / Huet, F. / Materials Research Society et al. | 2000
- W11.76.1
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Highly Chemical Reactive Ion Etching of Gallium NitrideKarouta, F. / Jacobs, B. / Moerman, I. / Jacobs, K. / Weyher, J. L. / Porowski, S. / Crane, R. / Hageman, P. R. / Materials Research Society et al. | 2000
- W11.77.1
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Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic TreatmentPark, M.-R. / Anderson, W. A. / Park, S.-J. / Materials Research Society et al. | 2000
- W11.78.1
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A Thermodynamic Approach to Ohmic Contact Formation to p-GaNLiu, B. / Ahonen, M. H. / Holloway, P. H. / Materials Research Society et al. | 2000
- W11.79.1
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Metal/GaN Contacts Studied by Electron SpectroscopiesDumont, J. / Caudano, R. / Sporken, R. / Monroy, E. / Munoz, E. / Beaumont, B. / Gibart, P. / Materials Research Society et al. | 2000
- W11.80.1
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Deep Levels in n-Type Schottky and p^+-n Homojunction GaN DiodesHierro, A. / Kwon, D. / Ringel, S. A. / Hansen, M. / Mishra, U. K. / DenBaars, S. P. / Speck, J. S. / Materials Research Society et al. | 2000
- W11.81.1
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Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN FilmsPolyakov, A. Y. / Smirnov, N. B. / Govorkov, A. V. / Usikov, A. S. / Shmidt, N. M. / Pushnyi, B. V. / Tsvetkov, D. V. / Stepanov, S. I. / Dmitriev, V. A. / Mil'vidskii, M. G. et al. | 2000
- W11.82.1
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Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient SpectroscopyWitte, H. / Krtschil, A. / Lisker, M. / Rudloff, D. / Christen, J. / Krost, A. / Stutzmann, M. / Scholz, F. / Materials Research Society et al. | 2000
- W11.83.1
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Photocurrent Spectroscopy Investigations of Mg-Related Defects Levels in p-Type GaNChung, S. J. / Cha, O. H. / Cho, H. K. / Jeong, M. S. / Hong, C. H. / Suh, E.-K. / Lee, H. J. / Materials Research Society et al. | 2000
- W11.84.1
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Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam EpitaxyFang, Z.-Q. / Look, D. C. / Kim, W. / Morkoc, H. / Materials Research Society et al. | 2000
- W12.3.1
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Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and Their Optical Characterization by Micro-Photoluminescence/Raman MappingKuball, M. / Benyoucef, M. / Morrissey, F. H. / Foxon, C. T. / Materials Research Society et al. | 2000
- W12.4.1
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Spectroscopy in Polarized and Piezoelectric AlGaInN HeterostructuresWetzel, C. / Takeuchi, T. / Amano, H. / Akasaki, I. / Materials Research Society et al. | 2000
- W12.6.1
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Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum WellsBonfiglio, A. / Lomascolo, M. / Traetta, G. / Cingolani, R. / Di Carlo, A. / Sala, F. D. / Lugli, P. / Botchkarev, A. / Morkoc, H. / Materials Research Society et al. | 2000
- W12.7.1
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Comparison Study of Structural and Optical Properties of In~xGa~1~-~xN/GaN Quantum Wells With Different In CompositionsKwon, Y.-H. / Gainer, G. H. / Bidnyk, S. / Cho, Y. H. / Song, J. J. / Hansen, M. / DenBaars, S. P. / Materials Research Society et al. | 2000
- W12.8.1
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Emission at 247 nm from GaN Quantum Wells Grown by MOCVDSomeya, T. / Hoshino, K. / Harris, J. C. / Tachibana, K. / Kako, S. / Arakawa, Y. / Materials Research Society et al. | 2000
- W12.9.1
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Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive IsotopesStotzler, A. / Weissenborn, R. / Deicher, M. / Materials Research Society et al. | 2000
- xxv
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PrefaceMaterials Research Society et al. | 2000
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Materials Research Society Symposium ProceedingsMaterials Research Society et al. | 2000
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AcknowledgmentsMaterials Research Society et al. | 2000