0.1 mum InGaAs/AlGaAs HEMT MMIC Production Process for High Performance Commercial Ka-band LNAs (English)
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In:
Gallium-Arsenide MANufacturing TECHnology
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249-250
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2000
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ISBN:
- Conference paper / Print
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Title:0.1 mum InGaAs/AlGaAs HEMT MMIC Production Process for High Performance Commercial Ka-band LNAs
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Contributors:Lai, R. ( author ) / Lui, H. ( author ) / Scarpulla, J. ( author ) / Tsai, R. ( author ) / Leung, D. ( author ) / Eng, D. ( author ) / Grundbacher, R. ( author ) / Aust, M. ( author ) / Lee, J. ( author ) / Hoppe, M. ( author )
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Conference:International conference, Gallium-Arsenide MANufacturing TECHnology ; 2000 ; Washington, DC
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Published in:GAAS MANTECH CONFERENCE ; 249-250
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Publisher:
- New search for: GaAS MANTECH
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Place of publication:St Louis
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Publication date:2000-01-01
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Size:2 pages
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Compound Semiconductor Requirements for Fiber Optic TelecommunicationsScott, M. G. et al. | 2000
- 7
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Invited Presentation Present and Future of GaAs Technologies in JapanFukuta, M. et al. | 2000
- 13
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A New Production Solution for High Selective and Low-Damage Etching of GaAs-Based DevicesLee, J. / Devre, M. / Johnson, D. / Sasserath, J. / Clayton, F. / Pearton, S. et al. | 2000
- 17
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Improvement of Surface Morphology for InGap HBTEssilfie, G. / Low, T. / Chou, H. / Kuhn, D. / DeLaCruz, M. / D Avanzo, D. / Seaward, K. / Carr, E. / Change, Y. L. et al. | 2000
- 21
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III-V Dry Etching by CCD-controlled in situ InterferometryJohn, W. / Weixelbaum, L. / Wittrich, H. / Frankowski, G. / Wurfl, J. et al. | 2000
- 25
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Electrochemical Etching Impact on GaAs Process, Mask Design and Device PerformanceHallakoun, I. / Boterashvili, T. / Bunin, G. / Shapira, Y. et al. | 2000
- 29
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Corrosion Behavior and Surface Studies of GaAs in Acidic SolutionsSteer, C. A. / Luo, J. L. / Ivey, G. G. et al. | 2000
- 35
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InP HBT Technology and ApplicationsOki, A. K. / Streit, D. C. / Kobayashi, K. W. / Gutierrez-Aitken, A. / Tran, L. T. / Grossman, P. C. / Block, T. / Yamada, F. / Sawdai, D. / Lammert, M. D. et al. | 2000
- 37
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Advanced InP/InGaAs HBTs Technology for Low-Power Lightwave Communication Circuit ApplicationsYamahata, S. / Nakajima, H. / Ida, M. / Sano, E. / Ishii, Y. et al. | 2000
- 43
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RF-LDMOS: A Silicon-Based, High-Power, High Efficiency Linear Power Amplifier TechnologyBurger, W. / Ageykum, E. / Ayoola, O. / Bouisse, G. / Brakensiek, W. / Brech, H. / Davidson, B. / Dragon, C. / Formicone, G. / Funk, G. et al. | 2000
- 49
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Compound Semiconductors in Wireless Communications SystemsTriolo, A. et al. | 2000
- 53
-
Integration of GaAs MMIC Technology in Commercial mm-Wave SATCOM and LMDS TransceiversAlm, R. et al. | 2000
- 57
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Very High Efficiency and Low Cost Power Metamorphic HEMT MMIC TechnologyChao, P. C. / Hwang, K. C. / Liu, J. S. M. / Tang, O. / Nichols, K. et al. | 2000
- 61
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Packaging Technologies for RFIC's: Increasing IntegrationImhoff, A. et al. | 2000
- 67
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Etching InP with H~2, BCl~3, and ArSabin, E. et al. | 2000
- 71
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A design of experiment for high throughput GaAs via etch by reactive ion etchLee, Juifen / Tsai, Hungchun / Chang, Yee-Shyi / Huang, Rong-Ting et al. | 2000
- 71
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A Design of Experiments for High Throughput GaAs Via Etch by Reactive Ion EtchLee, J. / Tsai, H. / Chang, Y. / Huang, R. T. et al. | 2000
- 75
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Breaking the 1000 Wafers/Week Barrier Through Substrate Via ProcessAdams, K. / Klingbeil, L. et al. | 2000
- 79
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Adapting Electrostatic Chucks for Dry Etching of GaAsTossell, D. / Powell, K. / Bourke, M. / Song, Y. et al. | 2000
- 85
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A Comparative Study of As, Sb, and P-based Metamorphic HEMTLubyshev, D. / Liu, W. K. / Stewart, T. / Cornfeld, A. / Patton, J. / Millunchick, J. M. / Hoke, W. / Meaton, C. / Nichols, K. / Svensson, S. P. et al. | 2000
- 89
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MOVPE Grown Metamorphic HEMT Epitaxial WafersTanaka, T. / Hashimoto, T. / Washima, M. / Sakaguchi, H. / Otoki, Y. et al. | 2000
- 93
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Material quality and uniformity issues of MOVPE-grown GaInP/GaAs HBTsKurpas, P. / Brunner, F. / Achouche, M. / Spitsbart, T. / Richter, E. / Bergunde, T. / Rentner, D. / Mai, M. / Wurfl, J. / Weyers, M. et al. | 2000
- 99
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Productive Availability of Non-destructive Thickness Measurement TechniquesHattori, R. / Oku, T. et al. | 2000
- 103
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New Barrel Type MOVPE Reactor for 6inch Epitaxial WafersOsada, T. / Fukuhara, N. / Takada, T. / Hata, M. et al. | 2000
- 109
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Contactless Room Temperature Characterization of PHEMT Structures Using Surface Photovoltage SpectroscopyLeibovitvh, M. / Hallakoun, I. / Bunin, G. / Solodky, S. / Ashkenasy, N. / Rosenwaks, Y. / Shapira, Y. et al. | 2000
- 113
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Forecasting Methods for MMIC RF YieldTsai, R. / Nishimoto, M. / Lai, R. et al. | 2000
- 117
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New On-Wafer Digital Laser Trimming Technique for Current Adjustment of GaAs FETIwasaki, Y. / Furukawa, H. / Tanaka, T. / Ueda, D. et al. | 2000
- 121
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Assessing Circuit Hermeticity By ElectrolysisRoesch, W. J. / Peterson, S. / Poe, A. / Brockett, S. / Mahon, S. / Bruckner, J. et al. | 2000
- 125
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A Better Way to Predict Reliability from Lifetest Data Using a Regression TechniqueScarpulla, J. / Eng, D. / Leung, D. et al. | 2000
- 131
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Reliability of InGaP-Emitter HBTsYeats, B. / Chandler, P. / D Avanzo, D. / Culver, M. / Essilfie, G. / Hutchinson, C. / Kuhn, D. / Low, T. / Shirley, T. / Thomas, S. et al. | 2000
- 137
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Characterization of InGaP/GaAs HBTs under Temperature and Current StressOka, T. / Hirata, K. / Takazawa, H. / Ohbu, I. et al. | 2000
- 141
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Performance and Reliability of an Advanced Production GaAs HBT Process TechnologyYamada, F. / Oki, A. / Streit, D. / Hikin, B. / Kaneshiro, E. / Lammert, M. / Tran, L. / Block, T. / Grossman, P. / Scarpulla, J. et al. | 2000
- 145
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Base Current Investigation of the Long Term Reliability of GaAs-based HBTsWelser, R. E. / Chaplin, M. / Lutz, C. R. / Pan, N. / Gupta, A. / Veasel, B. / Ezis, A. et al. | 2000
- 149
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Transient Characteristics of InGaP/GaAs/AlGaAs Double Heterojunction Bipolar TransistorsLutz, C. / Welser, R. / Pan, N. / Lau, K. / Musante, C. et al. | 2000
- 157
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Process Development on 0.12 mum Gate E/D GaAs MESFETs with f~T and f~m~a~x > 100 GHz Using Direct Ion Implantation for Low Power IC ApplicationsTang, A. / Hsia, H. / Becher, D. / Caruth, D. / Feng, M. et al. | 2000
- 161
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Cost Effective MeV Isolation Mask for Heterojunction Bipolar TransistorsGillespie, J. / Bozada, C. / Dettmer, R. / Fitch, R. / Nakano, K. / Sewell, J. / Via, D. / Bhattacharya, R. / Evans, H. et al. | 2000
- 165
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Direct bonding of heterogeneous wafers using surface activated bondingWatanabe, T. / Chung, T.R. / Suga, T. et al. | 2000
- 165
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Direct Bonding of Heterogeneous Wafers Using Surface Activated Bonding Method at Room TemperatureWatanabe, T. / Chung, T. R. / Suga, T. et al. | 2000
- 169
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Zero-Offset Low-Knee-Voltage GaInP/GaAs Collector-up Tunneling-Collector Heterojunction Bipolar Transistors for High-Efficiency High Power AmplifiersMochizuki, K. / Welty, R. J. / Asbeck, P. M. / Lutz, C. R. / Welser, R. E. / Whitney, S. J. / Pan, N. et al. | 2000
- 173
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Optimization of HIGFETs on LT-GaAs BuffersSadaka, M. / Abrokwah, J. / Bernhardt, B. et al. | 2000
- 177
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Utilization of Design of Experiments Combined with Technical Knowledge to Increase Manufacturability of a HIGFET DeviceHuang, E. / Wilson, M. R. et al. | 2000
- 181
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Highly Accelerated Stress Testing of GaAs Bulk ResistorsSabin, E. / Scarpulla, J. / Chou, Y. / Wu, C. et al. | 2000
- 181
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Highly accelerated stressing of GaAs bulk resistorsSabin, E. / Scarpulla, J. / Chou, Y.C. / Wu, C.S. et al. | 2000
- 185
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Device Characteristics of Dry Etched AlGaAs/InGaAs HEMTs Fabricated by Inductively Coupled Plasma EtchingLee, J. H. / Yeon, H. S. / Lee, C. W. / Choi, S. S. / Maeng, S. J. / Lee, K. H. / Goodyear, A. et al. | 2000
- 193
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Transitioning Technological Innovation - A Market PerspectiveSmith, B. R. et al. | 2000
- 197
-
Commercial Wide Bandgap RF Power Devices - Fact or Fiction?Weitzel, C. E. et al. | 2000
- 201
-
GaN electronic devices for microwave power applicationsBinari, S.C. / Ikossi-Anastasiou, K. / Roussos, J.A. / Park, D. / Koleske, D.D. / Wickenden, A.E. / Henry, R.L. et al. | 2000
- 201
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GaN Electronics Devices for Microwave Power ApplicationsBinari, S. / Ikossi-Anastasiou, K. / Roussos, J. / Henry, R. / Koleske, D. / Park, D. / Wickenden, A. et al. | 2000
- 205
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Business Opportunities for GaN DevicesBlum, F. et al. | 2000
- 211
-
Processing and Properties of PdGe Ohmic contacts to GaAsMacInnes, A. / Morton, R. / Radulescu, F. / McCarthy, J. et al. | 2000
- 215
-
Electron-beam Irradiation during Schottky Gate Metallization of GaAs FETOhshima, T. / Ozawa, H. / Moriguchi, H. / Shigemasa, R. / Tsunotani, M. / Kimura, T. et al. | 2000
- 219
-
A Manufacturable Multi-Level Interconnect Process Using Two Layers of 4.5 um Thick Plated GoldDilley, J. / Hall, S. et al. | 2000
- 225
-
High Performance Metamorphic HEMTs on 100 mm GaAs SubstrateKao, M. / Beam, A. / Muir, M. / Saunier, P. / Tsemg, H. et al. | 2000
- 229
-
High Performance High-Gain Amplifiers Based on Metamorphic GaAs HEMT'svan der Zanden, K. / Schreurs, D. / Vandersmissen, R. / Borghs, G. et al. | 2000
- 233
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Metamorphic InAlAs/InGaAs HEMT MMIC Technology on GaAs Substrate: From Promise to RealityChertouk, M. / Benkhelifa, F. / Dammann, M. / Walther, M. / Kohler, K. / Weimann, G. et al. | 2000
- 237
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GaAs Metamorphic HEMT (MHEMT): The Ideal Candidate for High Performance, Millimeter Wave Low Noise and Power ApplicationsWhelan, C. S. / Marsh, P. F. / Hoke, W. E. / Kazior, T. E. et al. | 2000
- 243
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ANADIGICS' Conversion to 6inch GaAs FABDiamond, B. et al. | 2000
- 245
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Riding the Wireless Wave With 150mm GaAs ManufacturingWilson, M. R. / Adams, K. / Huang, E. et al. | 2000
- 249
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0.1 mum InGaAs/AlGaAs HEMT MMIC Production Process for High Performance Commercial Ka-band LNAsLai, R. / Lui, H. / Scarpulla, J. / Tsai, R. / Leung, D. / Eng, D. / Grundbacher, R. / Aust, M. / Lee, J. / Hoppe, M. et al. | 2000
- 251
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Establishment of a Full Functional Six-inch PHEMT Manufacturing Wafer FabPao, Y. C. / Glajchen, D. / Kerrigan, R. / McEachran, J. et al. | 2000