High Power 810nm GaAsP/AlGaAs Diode Lasers with Narrow Beam Divergence (English)
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- New search for: Institute of Electrical and Electronics Engineers
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International semiconductor laser conference
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19-20
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2000
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Title:High Power 810nm GaAsP/AlGaAs Diode Lasers with Narrow Beam Divergence
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Conference:17th, International semiconductor laser conference ; 2000 ; Monterey, CA
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Publication date:2000-01-01
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Size:2 pages
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Remarks:IEEE cat no 00CH37092
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Long-wavelength VCSELs: the case for all-epitaxial approachesColdren, L.A. et al. | 2000
- 1
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Long Wavelgenth VCSELs: The Case for All-Epitaxial ApproachesInstitute of Electrical and Electronics Engineers et al. | 2000
- 3
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Recent progress in WDM laser diodes and integrated light sourcesMito, I. et al. | 2000
- 5
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All-optical 3R regenerators: status and challengesDevaux, F. et al. | 2000
- 7
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Continuous wave operation of 1.3 /spl mu/m vertical cavity InGaAsN quantum well lasersFischer, A.J. / Klem, J.F. / Choquette, K.D. / Blum, O. / Allerman, A.A. / Fritz, I.J. / Kurtz, S.R. / Breiland, W.G. / Sieg, R. / Geib, K.M. et al. | 2000
- 7
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Continuous Wave Operation of 1.3 mum Vertical Cavity InGaAsN Quantum Well LasersInstitute of Electrical and Electronics Engineers et al. | 2000
- 9
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Low threshold current continuous-wave GaInNAs/GaAs VCSELsLarson, M.C. / Coldren, C.W. / Spruytte, S.G. / Petersen, H.E. / Harris, J.S. et al. | 2000
- 11
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A highly strained (/spl lambda/=1.12 /spl mu/m) GaInAs/GaAs VCSEL on GaAs (311)B substrate exhibiting stable polarizationNishiyama, N. / Arai, M. / Shinada, S. / Miyamoto, T. / Koyama, F. / Iga, K. et al. | 2000
- 11
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A Highly Strained (Lambda=1.12mum) GaInAs/GaAs VCSEL on GaAs (311)B Substrate Exhibiting Stable PolarizationInstitute of Electrical and Electronics Engineers et al. | 2000
- 13
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Vertical Cavity Surface Emitting Lasers with InAs-InGaAs Quantum Dot Active Regions on GaAs Substrates Emitting at 1.3 mumInstitute of Electrical and Electronics Engineers et al. | 2000
- 13
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Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrates emitting at 1.3 /spl mu/mLott, J.A. / Ledentsov, N.N. / Ustinov, V.M. / Maleev, N.A. / Zhukov, A.E. / Maximov, M.V. / Volovik, B.V. / Alferov, Zh.I. / Bimberg, D. et al. | 2000
- 15
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-180 to +80^oC CW Lasing in Visible VCSELsInstitute of Electrical and Electronics Engineers et al. | 2000
- 15
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-180 to +80/spl deg/C CW lasing in visible VCSELsSale, T.E. / Knowles, G.C. / Sweeney, S.J. / Onischenko, A. / Frost, J.E.F. / Pinches, S.M. / Woodhead, J. et al. | 2000
- 17
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Analog modulation performance of red (670 nm) oxide confined VCSELsCarlsson, C. / Martinsson, H. / Vukusic, J. / Halonen, J. / Larsson, A. et al. | 2000
- 19
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High power 810 nm GaAsP/AlGaAs diode lasers with narrow beam divergenceSebastian, J. / Beister, G. / Bugge, F. / Erbert, G. / Hansel, H.G. / Buhrandt, F. / Knauer, A. / Hulsewede, R. / Wenzel, H. / Staske, R. et al. | 2000
- 21
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High power, highly reliable Al-free 940 nm diode lasersErbert, G. / Beister, G. / Knauer, A. / Sebastian, J. / Hulsewede, R. / Wenzel, H. / Weyers, M. / Trankle, G. et al. | 2000
- 23
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A novel configuration of 980 nm pumping laser module using fiber Bragg grating and polarization maintaining fiberYamaguchi, T. / Ohki, Y. / Irie, Y. / Shimizu, T. / Kasukawa, A. et al. | 2000
- 25
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COD-free high power (760 mW) 980 nm laser diodes with current-blocking facetsIgarashi, T. / Fukagai, K. / Chida, H. / Miyazaki, T. / Horie, M. / Ishikawa, S. / Torikai, T. et al. | 2000
- 27
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Grating stabilized 0.5 W, 980 nm pump modulesNagarajan, R. / Rossin, V.V. / Ransom, H. / Morozova, N. / Kanjamala, A. / Parke, R. / Dawson, D. / Kim, T.J. / Clarke, H. / Uppal, K. et al. | 2000
- 29
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400 mW 980 nm-module with very high power conversion efficiencySchmidt, B. / Pawlik, S. / Rothfritz, H. / Thies, A. / Mordiek, S. / Harder, C. et al. | 2000
- 29
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400mW 9890nm-Module with Very High Power Conversion EfficiencyInstitute of Electrical and Electronics Engineers et al. | 2000
- 33
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Room temperature continuous operation of optically-pumped two-dimensional photonic crystal slab laserHwang, J.K. / Ryu, H.Y. / Song, D.S. / Han, I.Y. / Park, H.K. / Jang, D.H. / Lee, Y.H. et al. | 2000
- 35
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Surface-emitting, single-lobe operation from 2nd-order DFB/DBR lasers with central grating phaseshiftWitjaksono, G. / Botez, D. et al. | 2000
- 37
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Tunable external-cavity semiconductor laser using monolithically integrated tapered amplifier and grating coupler for collimatingUemukai, M. / Suhara, T. / Yutani, K. / Shimada, N. / Fukumoto, Y. / Nishihara, H. / Larsson, A. et al. | 2000
- 39
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Surface-emitting tapered unstable resonator laser with integrated focusing grating coupler comparing linear and trumpet shaped taperKristjansson, S. / Eriksson, N. / Modh, P. / Larsson, A. et al. | 2000
- 41
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Single-transverse-mode filtering utilizing proton implantation: 1.3-W CW diffraction-limited unstable-cavity lasers at 1.48 /spl mu/mGerard, F. / Delepine, S. / Bissessur, H. / Locatelli, D. / Fillion, T. / Bouche, N. / Salet, P. et al. | 2000
- 41
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Single-Transverse-Mode Filtering Utilizing Proton Implantation: 1.3-W CW Diffraction-Limited Unstable-Cavity Lasers at 1.48 mumInstitute of Electrical and Electronics Engineers et al. | 2000
- 43
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Semiconductor e-h plasma lasersZutavern, F.J. / Baca, A.G. / Chow, W.W. / Hafich, M.J. / Hjalmarson, H.P. / Loubriel, G.M. / Mar, A. / O'Malley, M.W. / Vawter, G.A. et al. | 2000
- 45
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High Single-Mode Yield 1.55 mum GaInAsP/InP BH-DFB Lasers with Periodic Wirelike Active RegionsInstitute of Electrical and Electronics Engineers et al. | 2000
- 45
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High single-mode yield 1.55 /spl mu/m GaInAsP/InP BH-DFB lasers with periodic wirelike active regionsNunoya, N. / Morshed, M. / Nakamura, M. / Tamura, S. / Arai, S. et al. | 2000
- 47
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Thin-film heater-loaded wavelength-tunable integrated laser/modulatorAoki, M. / Ohishi, A. / Shirai, M. / Kaneko, R. / Kuwano, H. / Tsuji, S. et al. | 2000
- 49
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Wavelength, modal and power stabilization of tunable electro-absorption modulated, distributed Bragg reflector lasersAckerman, D.A. / Dreyer, K.F. / Koren, U. / Stayt, J.W. / Broutin, S.L. / Asous, W.A. / Johnson, J.E. / Ketelsen, L.J.-P. / Kamath, K.K. / O'Brien, S. et al. | 2000
- 51
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Assessing aging in tunable electro-absorption modulated, distributed Bragg reflector lasersAckerman, D.A. / Johnson, J.E. / Zhang, L. / Chu, S.N.G. / Dean, E.J. / Kamath, K.K. / Ketelsen, L.J.-P. et al. | 2000
- 53
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New WDM DFB laser structure for facet phase-free uniform performancesThedrez, B. / Voiriot, V. / Hubert, S. / Lafragette, J.L. / Roux, L. / Grillot, F. / Gentner, J.L. / Fernier, B. et al. | 2000
- 55
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Highly reliable 1.3-/spl mu/m InGaAlAs MQW DFB lasersSudoh, T.K. / Takemoto, D. / Tsuchiya, T. / Aoki, M. / Tsuji, S. et al. | 2000
- 55
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Highly Reliable 1.3-mum InGaAlAs MQW DFB LasersInstitute of Electrical and Electronics Engineers et al. | 2000
- 57
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Spatially varied anti-resonant DBR design for large-area single-mode VCSELsUnold, H.J. / Kicherer, M. / Mahmoud, S.W.Z. / Jager, R. / Michalzik, R. / Ebeling, K.J. et al. | 2000
- 59
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High single mode operation from hybrid ion implanted/selectively oxidized VCSELsChoquette, K.D. / Fischer, A.J. / Geib, K.M. / Hadley, G.R. / Allerman, A.A. / Hindi, J.J. et al. | 2000
- 61
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2-D phased-locked antiguided vertical cavity surface emitting laser arraysZhou, D. / Mawst, L.J. et al. | 2000
- 63
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Large-area high-power VCSELMiller, M. / Grabherr, M. / Jager, R. / Unold, H.J. / Ebeling, K.J. et al. | 2000
- 65
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Gain in ultra-low-threshold InAs/InGaAs quantum dot lasersEliseev, P.G. / Li, H. / Liu, G.T. / Stintz, A. / Newell, T.C. / Lester, L.F. / Malloy, K.J. et al. | 2000
- 67
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Interband tunneling in InAs/GaSb type-II cascade structureKisin, M. / Stroscio, M.A. / Belenky, G. / Luryi, S. et al. | 2000
- 69
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Mid-IR type-I and type-II quantum cascade lasersHwang, W.-Y. / Chih-Hsiang Lin, / Zaitsev, S.V. / Um, J. / Hong-Wen Ren, et al. | 2000
- 71
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1.5 W operation of superluminescent diode with highly strained GaInAs/GaAs quantum well emitting at 1.2 /spl mu/m bandKoyama, F. / Schlenker, D. / Miyamoto, T. / Chen, Z. / Yamatoya, T. / Kondo, T. / Iga, K. et al. | 2000
- 71
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1.5 W Operation of Superluminescent Diode with Highly Strained GaInAs/GaAs Quantum Well Emitting at 1.2 mum BandInstitute of Electrical and Electronics Engineers et al. | 2000
- 73
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Reduction of mode partition noise by using semiconductor optical amplifiersSato, K. / Toba, H. et al. | 2000
- 75
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Photonic quantum ring emission of 3D Rayleigh's cavityKwon, O. / Park, B.H. / Kim, J.Y. / Bae, J. / Kim, M.J. et al. | 2000
- 77
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Sequential generation of 10-wavelength picosecond pulses from a semiconductor laser using sub-harmonic pulse-gating in a dispersion-balanced external cavityLee, K.L. / Shu, C. / Liu, H.F. et al. | 2000
- 79
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Novel techniques for realizing SGDBR DWDM sources without coarse tuningIng-Fa Jang, / San-Liang Lee, / Chi-Yu Wang, / Tien-Tsorng Shih, / Yu-Heng Jan, et al. | 2000
- 81
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Monolithic integration of laterally complex coupled DFB lasers with passive waveguides by positive wavelength detuningRennon, S. / Bach, L. / Reithmaier, J.P. / Forchel, A. / Gentner, J.L. / Goldstein, L. et al. | 2000
- 83
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Fabrication of a bistable distributed feedback laser amplifier with a completely linear chirped grating by electron beam lithographyTajima, T. / Hayashi, K. / Maywar, D.N. / Asawamethapant, W. / Nakano, Y. et al. | 2000
- 85
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Reduced spectral linewidth in high output power DFB lasersInaba, Y. / Kito, M. / Takizawa, T. / Nakayama, H. / Ishino, M. / Itoh, K. et al. | 2000
- 87
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The direct modulation bandwidth of widely tunable DBR laser diodesMorthier, G. / Sarlet, G. / Baets, R. / O'Dowd, R. / Ishii, H. / Yoshikuni, Y. et al. | 2000
- 89
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Transmission characteristics of uncooled and directly modulated 1.3 micrometers distributed feedback laser diode for serial 10 Giga bit EthernetSakaino, G. / Hisa, Y. / Takagi, K. / Aoyagi, T. / Nishimura, T. / Omura, E. et al. | 2000
- 91
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Supermodes with angular momentum from coherent VCSEL arrays-emergence and stabilityYadin, Y. / Scheuer, J. / Gross, Y. / Orenstein, M. et al. | 2000
- 93
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Low-Threshold and High-Temperature Operation of InGaAIP-Based Proton-Implanted Red VCSELsInstitute of Electrical and Electronics Engineers et al. | 2000
- 93
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Low-threshold and high-temperature operation of InGaAlP-based proton-implanted red VCSELsTakaoka, K. / Ishikawa, M. / Hatakoshi, G. et al. | 2000
- 95
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Parasitics and design considerations on oxide-implant VCSELsChang, C.H. / Chrostowski, L. / Chang-Hasnain, C.J. et al. | 2000
- 97
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Over 200mW Operation of Single-Lateral-Mode 785nm Laser Diodes with Window-Mirror StructureInstitute of Electrical and Electronics Engineers et al. | 2000
- 97
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Diodes with window-mirror structureKawazu, Z. / Tashiro, Y. / Shima, A. / Suzuki, D. / Nishiguchi, H. / Yagi, T. / Omura, E. et al. | 2000
- 99
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Numerical simulations of new high-power, high-brightness diode laser structuresBoucke, K. et al. | 2000
- 101
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Transverse and polarization mode selection in vertical-cavity surface-emitting lasersMulet, J. / Balle, S. / Miguel, M.S. / Mirasso, C.R. et al. | 2000
- 105
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A new approach to improved green emitting II-VI laser diodesStrassburg, M. / Schulz, O. / Pohl, U.W. / Bimberg, D. / Klude, M. / Hommel, D. / Itoh, S. / Nakano, K. / Ishibashi, A. et al. | 2000
- 107
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Continuous-wave operation of InGaN multiple quantum well laser diodes on copper substrates obtained by laser lift-offKneissl, M. / Wong, W.S. / Romano, L.T. / Treat, D.W. / Schmidt, T. / Teepe, M. / Johnson, N.M. et al. | 2000
- 109
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AlGaInN laser diodes grown on an ELO-GaN substrate vs. on a sapphire substrateAsano, T. / Tojyo, T. / Yanashima, K. / Takeya, M. / Hino, T. / Ikeda, S. / Kijima, S. / Ansai, S. / Shibuya, K. / Goto, S. et al. | 2000
- 111
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1.3 mum Strained Quantum Well Lasers on InGaAs Ternary Substrates with a Low Threshold Current Density (<80 A/cm^2/well)Institute of Electrical and Electronics Engineers et al. | 2000
- 111
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1.3 /spl mu/m strained quantum well lasers on InGaAs ternary substrates with a low threshold current density (<80 A/cm/sup 2//well)Otsubo, K. / Sekine, N. / Nishijima, Y. / Aoki, O. / Kuramata, A. / Ishikawa, H. et al. | 2000
- 113
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Laser performance comparison of long-wavelength strained InGaNAs and InGaAs QW laser diodes grown by AP-MOVPEMereuta, A. / Bouchoule, S. / Sagnes, I. / Alexandre, F. / Sik, H. / Decobert, J. et al. | 2000
- 115
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Room-temperature operation of GaInAsN/GaAs laser diodes in the 1.5 /spl mu/m rangeFischer, M. / Reinhardt, M. / Forchel, A. et al. | 2000
- 115
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Room-Temperature Operation of GaInAsN/GaAs Laser Diodes in the 1.5 mum RangeInstitute of Electrical and Electronics Engineers et al. | 2000
- 117
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Selective disordering of InGaAs strained quantum well by rapid thermal annealing with SiO/sub 2/ caps of different thicknesses for photonic integrationShimada, N. / Fukumoto, Y. / Uemukai, M. / Suhara, T. / Nishihara, H. / Larsson, A. et al. | 2000
- 117
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Selective Disordering of InGaAs Strained Quantum Well by Rapid Thermal Annealing with SiO~2 Caps of Different Thicknesses for Photonic IntegrationInstitute of Electrical and Electronics Engineers et al. | 2000
- 119
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Hole confinement in strain-compensated-SQW (In/sub x/Ga/sub 1-x/As/GaAsP)/GaAs lasersSusaki, W. / Kondo, K. / Yaku, H. / Asano, H. / Fukunaga, T. / Hayakawa, T. et al. | 2000
- 119
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Hole Confinement in Strain-Compensated-SQW (In~xGa~1~-~xAs/GaAsP)/GaAs LasersInstitute of Electrical and Electronics Engineers et al. | 2000
- 121
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Extraction of non-radiative and carrier leakage losses in GaInP lasers through comparison of experimental and theoretical optical propertiesSmowton, P.M. / Lewis, G.M. / Blood, P. / Chow, W.W. / Koch, S.W. et al. | 2000
- 123
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High Gain and Low Polarization Dependent 1.55-mum Semiconductor Optical Amplifier with a Spot-Size ConverterInstitute of Electrical and Electronics Engineers et al. | 2000
- 123
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High gain and low polarization dependent 1.55-/spl mu/m semiconductor optical amplifier with a spot-size converterTohmori, Y. / Ito, T. / Magari, K. / Kawaguchi, Y. / Kadota, Y. / Kamioka, H. / Oohashi, H. / Suzuki, Y. et al. | 2000
- 125
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High-performance continuous wave type-II interband cascade lasersYang, R.Q. / Bradshaw, J.L. / Bruno, J.D. / Pham, J.T. / Wortman, D.E. et al. | 2000
- 127
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Mid-IR broadened-waveguide and angled-grating distributed feedback (/spl alpha/-DFB) "W" quantum well lasersBewley, W.W. / Felix, C.L. / Vurgaftman, I. / Bartolo, R.E. / Stokes, D.W. / Jurkovic, M.J. / Lindle, J.R. / Meyer, J.R. / Yang, M.-J. / Lee, H. et al. | 2000
- 127
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Mid-IR Broadened-Waveguide and Angled-Grating Distributed Feedback (alpha-DFB) "W" Quantum Well LasersInstitute of Electrical and Electronics Engineers et al. | 2000
- 131
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High power quantum dot lasers at 1140 nmRibbat, Ch. / Sellin, R. / Grundmann, M. / Bimberg, D. et al. | 2000
- 133
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Modal Gain and T~0 Value Improvements in Quantum Dot Lasers using Dots-in-a-Well (DWELL) StructureInstitute of Electrical and Electronics Engineers et al. | 2000
- 133
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Modal gain and T/sub 0/ value improvements in quantum dot lasers using dots-in-a-well (DWELL) structureLiu, G.T. / Li, H. / Stintz, A. / Newell, T.C. / Lester, L.F. / Malloy, K.J. et al. | 2000
- 135
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Temperature dependence of the wavelength of quantum dot lasersThomson, J. / Summers, H. / Smowton, P. / Herrmann, E. / Blood, P. / Hopkinson, M. et al. | 2000
- 137
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183 nm tuning range in a grating-coupled external-cavity quantum dot laserVarangis, P.M. / Li, H. / Liu, G.T. / Newell, T.C. / Stintz, A. / Fuchs, B. / Malloy, K.J. / Lester, L.F. et al. | 2000
- 139
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Edge-emitting microlasers with a single quantum dot active layerRennon, S. / Avary, K. / Klopf, F. / Wolf, A. / Emmerling, M. / Reithmaier, J.P. / Forchel, A. et al. | 2000
- 141
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1.3 /spl mu/m AlGaInAs ridge waveguide lasers with uncooled 10 Gb/s operation at 85/spl deg/CHanamaki, Y. / Takiguchi, T. / Kadowaki, T. / Tanaka, T. / Takemi, M. / Tomita, N. / Mihashi, Y. / Omura, E. et al. | 2000
- 141
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1.3mum AlGaInAs Ridge Waveguide Lasers with Uncooled 10Gb/s Operation at 85^oCInstitute of Electrical and Electronics Engineers et al. | 2000
- 143
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Detuned grating multi-section-RW-DFB-lasers for high speed optical signal processingMohrle, M. / Sartorius, B. / Bornholt, C. / Bauer, S. / Brox, O. / Sigmund, A. / Steingruber, R. / Radziunas, M. / Wunsche, H.J. et al. | 2000
- 145
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Multi-Section Ion-Implantation-Induced Saturable Absorbers for High-Power 1.5-mum Picosecond Laser DiodesInstitute of Electrical and Electronics Engineers et al. | 2000
- 145
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Multi-section ion-implantation-induced saturable absorbers for high-power 1.5-/spl mu/m picosecond laser diodesVenus, G. / Gubenko, A. / Dashevskii, V. / Portnoi, E. / Avrutin, E. / Frahm, J. / Kubler, J. / Schelhase, S. / Paraskevopoulos, A. et al. | 2000
- 147
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Generation of a 56 GHz pulse train from a Fabry-Perot semiconductor laser using subharmonic optical injectionYang Jing Wen, / Novak, D. / Hai Feng Liu, et al. | 2000
- 147
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Generation of a 56 GH Pulse Train from a Fabry-Perot Semiconductor Laser using Subharmonic Optical InjectionInstitute of Electrical and Electronics Engineers et al. | 2000
- 149
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Noise of modelocked laser diodesJiang, L.A. / Grein, M.E. / Haus, H.A. / Ippen, E.P. et al. | 2000
- 151
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1.55-/spl mu/m, InP-lattice-matched VCSELs operating at RT under CWNakagawa, S. / Hall, E.M. / Almuneau, G. / Kim, J.K. / Kroemer, H. / Coldren, L.A. et al. | 2000
- 151
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1.55-mum, InP-Lattice-Matched VCSELs Operating at RT under CWInstitute of Electrical and Electronics Engineers et al. | 2000
- 153
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InP-Based Vertical-Cavity Surface-Emitting Lasers for 1.5-1.8 mum Wavelength LasersInstitute of Electrical and Electronics Engineers et al. | 2000
- 153
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InP-based vertical-cavity surface-emitting lasers for 1.5-1.8 /spl mu/m wavelength rangeShau, R. / Ortsiefer, M. / Bohm, G. / Kohler, F. / Amann, M.-C. et al. | 2000
- 155
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Bipolar cascade 1.55 /spl mu/m VCSELs with >1 differential quantum efficiency and CW operationKim, J.K. / Hall, E. / Nakagawa, S. / Huntington, A. / Coldren, L.A. et al. | 2000
- 155
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Bipolar Cascade 1.55mum VCSELs with >1 Differential Quantum Efficiency and CW OperationInstitute of Electrical and Electronics Engineers et al. | 2000
- 157
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Superlattice Barrier 1528 nm Vertical Cavity Laser with 85^oC Continuous Wave OperationInstitute of Electrical and Electronics Engineers et al. | 2000
- 157
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Superlattice barrier 1528 nm vertical cavity laser with 85/spl deg/C continuous wave operationKarim, A. / Black, K.A. / Abraham, P. / Lofgreen, D. / Chiu, Y.J. / Piprek, J. / Bowers, J.E. et al. | 2000
- 159
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Authors index| 2000
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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)| 2000